Datasheet BLV25 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV25

VHF power transistor

Product specification

August 1986

Philips Semiconductors Product specification

VHF power transistor BLV25

DESCRIPTION

N-P-N silicon planar epitaxial
transistor primarily for use in
v.h.f.-f.m. broadcast transmitters.

FEATURES

• internally matched input for
wideband operation and high
power gain;

• multi-base structure and diffused
emitter ballasting resistors for an
optimum temperature profile;

• gold-metallization ensures
excellent reliability.

The transistor has a1⁄2in 6-lead
flange envelope with a ceramic cap.
All leads are isolated from the flange.

QUICK REFERENCE DATA

R.F. performance up to T

MODE OPERATION

=25°C in an unneutralized common-emitter class-B circuit.

h

V

CE

V

f

MHz

P
W

L

P

S

W

G
dB

p

narrow band; c.w. 28 108 175 < 17,5 > 10,0 > 65

PIN CONFIGURATION

PINNING

PIN DESCRIPTION

1 emitter

handbook, halfpage

1

2

2 emitter
3 base

3

4

4 collector
5 emitter
6 emitter

65

η

%

MSB006

Fig.1 Simplified outline, SOT119A.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

August 1986 2

Philips Semiconductors Product specification

VHF power transistor BLV25

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage

(peak value); V

open base V
Emitter-base voltage (open collector) V
Collector current

d.c. or average I

(peak value); f > 1 MHz I
Total power dissipation at T
R.F. power dissipation (f > 1 MHz); T
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T

=0 V

BE

=25°CP

mb

=25°CP

mb

=70°CP

h

CESM
CEO
EBO

; I

C

C(AV)

CM

tot (d.c.)
tot (r.f.)
tot (r.f.)
stg
j

max. 65 V
max. 33 V
max. 4 V

max. 17, 5 A
max. 35 A
max. 220 W
max. 270 W
max. 146 W

−65 to +150 °C

max. 200 °C

2

10

handbook, halfpage

I

C

(A)

10

1

11010

(1) Second breakdown limit.

Tmb = 25 °C

Th = 70 °C

Fig.2 D.C. SOAR.

(1)

VCE (V)

MGP294

2

300

handbook, halfpage

P

tot

(W)

200

100

0

0 100

I Continuous d.c. operation
II Continuous r.f. operation (f > 1 MHz)
III Short-time operation during mismatch; (f > 1 MHz).

ΙΙΙ

ΙΙ

Ι

50

Th (°C)

Fig.3 Power derating curves vs. temperature.

MGP295

THERMAL RESISTANCE

(dissipation = 150 W; T

=72°C, i.e. Th=42°C)

mb

From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R

August 1986 3

th j-mb(dc)
th j-mb(rf)
th mb-h

max 0,85 K/W
max 0,60 K/W
max 0,2 K/W

Philips Semiconductors Product specification

VHF power transistor BLV25

CHARACTERISTICS

T

=25°C

j

Collector-emitter breakdown voltage

V

=0;IC=50mA V

BE

open base; I

= 200 mA V

C

Emitter-base breakdown voltage

open collector; I

=20mA V

E

Collector cut-off current

VBE=0;VCE= 33 V I

Second breakdown energy; L = 25 mH; f = 50 Hz

open base E
R

=10Ω E

BE

D.C. current gain

(1)

IC= 8,5 A; VCE=25V h

Collector-emitter saturation voltage

(1)

IC= 20 A; IB= 4,0 A V

Transition frequency at f = 100 MHz

(2)

−IE= 8,5 A; VCB=25V f

−I

= 20 A; VCB=25V f

E

Collector capacitance at f = 1 MHz

I

= 0; VCB=25V C

E=Ie

Feedback capacitance at f=1MHz

IC= 100 mA; VCE=25V C

Collector-flange capacitance C

(BR)CES
(BR)CEO

(BR)EBO

CES

SBO
SBR

FE

CEsat

T
T

c

re
cf

> 65 V
> 33 V

> 4V

< 25 mA

> 20 mJ
> 20 mJ

typ. 50

15 to 100

typ. 1,6 V

typ. 600 MHz
typ. 600 MHz

typ. 275 pF

typ. 155 pF
typ. 3 pF

Notes

1. Measured under pulse conditions: t

≤ 300 µs; δ≤0,02.

p

2. Measured under pulse conditions: tp≤ 50 µs; δ≤0,01.

August 1986 4

Philips Semiconductors Product specification

VHF power transistor BLV25

80

handbook, halfpage

h

FE

40

0

0

typ

10

IC (A)

Fig.4 VCE= 25 V; Tj=25°C.

MGP296

800

handbook, halfpage

f

T

(MHz)

400

20

0

010 30

typ

20

MGP297

−IE (A)

Fig.5 VCB= 25 V; f = 100 MHz; Tj=25°C.

600

handbook, halfpage

C

c

(pF)

300

0

0102030

typ

MGP298

VCB (V)

Fig.6 IE=Ie= 0; f = 1 MHz; Tj=25°C.

August 1986 5

Philips Semiconductors Product specification

VHF power transistor BLV25

APPLICATION INFORMATION

R.F. performance in narrow band c.w. operation (common-emitter class-B circuit) T

=25°C

h

f

MHz

V

CE

V

P

W

L

P

S

W

G
dB

p

I

C

A

108 28 175 < 17,5 > 10,0 < 9,6 > 65

typ. 13,9 typ. 11,0 typ. 8,9 typ. 70

handbook, full pagewidth

50 Ω

C1

C2

C3

C4

L1

L3

R1

C5

T.U.T.

L2

C6

C7

L4

L6

L5

C8 C10 C11 C14

L7

C9

C12

C13

C15

50 Ω

C16

L8

+V

L9

MGP299

Fig.7 Class-B test circuit at f = 108 MHz.

List of components

C1 = C3 = 7 to 100 pF film dielectric trimmer (cat. no. 2222 809 07015)
C2 = C4 = C5 = C6 = C7 = 100 pF (500 V) multilayer ceramic chip capacitor (ATC

(1)

); except for C2 these capacitors

are placed 7 mm from transistor edge
C8 = C10 = 470 pF multilayer ceramic chip capacitor (cat. no. 2222 856 13471)
C9 = C15 = 40 pF, parallel connection of 4 x 10 pF lead feed-through capacitors (cat. no. 2222 702 05109)
C11 = 100 nF multilayer ceramic chip capacitor (cat. no. 2222 852 59104)
C12 = C16 = 7 to 47 pF precision tuning capacitor (cat. no. 2222 805 00174)
C13 = 19 pF, parallel connection of 4 x 4,7 pF lead feed-through capacitors (cat. no. 2222 702 04478)
C14 = 6,8 µF/63 V electrolytic capacitor

η

%

CC

L1 = Cu strip (10 mm × 4 mm × 0,5 mm)
L2 = strip on printed-circuit board
L3 = 7 turns closely wound enamelled Cu wire (0,3 mm); int. dia. 3,0 mm; leads 2 × 6 mm
L4 = L8 = L9 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L5 = 3 turns enamelled Cu wire (1,6 mm); int. dia. 8 mm; length 9 mm; leads 2 × 5 mm
L6 = Cu strip (27 mm × 9 mm × 0,5 mm)
L7 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 8 mm; length 9 mm; leads 2 × 10 mm
L2 is strip on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16 in.
R1 = 10 Ω carbon resistor

Note

1. ATC means American Technical Ceramics.

August 1986 6

Philips Semiconductors Product specification

VHF power transistor BLV25

270

80

C8

L4

C2

The circuit and the components are on one side of the epoxy fibre-glass board, the other side is unetched copper to serve as a
ground-plane. Earth connections are made by means of fixing screws. Additionally copper straps are used under the emitters and
at the input and output to provide direct contact between the copper on the component side and the ground-plane.

L3

L1

L2

C6, C7

C3C1

R1

C4, C5

7 mm

C10

C11

+V

CC

L7

L5

L8, L9

L6

C9

strip

C13

strip

stop

strip

C12

C15

stop

C16

Fig.8 Component layout and printed-circuit board for 108 MHz class-B test circuit.

strip

MGP300

August 1986 7

Philips Semiconductors Product specification

VHF power transistor BLV25

200

handbook, halfpage

P

L

(W)

100

0

11010

——— f > 1 MHz (continuous);

− − − − short time operation during mismatch (f > 1 MHz).

Th =
25 °C

50 °C
70 °C

25 °C
50 °C

70 °C

VSWR

Fig.9 R.F. SOAR.

MGP301

2

250

handbook, halfpage

P

L

(W)

200

150

100

50

0

0102030

Test circuit tuned for each power level; typical values;

= 28 V; f = 108 MHz; Th=25°C; class-B operation.

V

CE

MGP302

PS (W)

Fig.10 Load power as a function of source power.

16

handbook, halfpage

G

p

(dB)

12

8

4

0

0 100 200 300

Test circuit tuned for each power level; typical values;

= 28 V; f = 108 MHz; Th=25°C; class-B operation.

V

CE

η

G

p

MGP303

PL (W)

Fig.11 Power gain and efficiency as a function of

source power.

80

60

40

20

0

(%)

handbook, halfpage

η

1

ri, x

i

(Ω)

r

0.5

0

−0.5

−1

20

Typical values; VCE= 28 V; PL= 175 W;

=25°C; class-B operation.

T

h

i

x

i

70

f (MHz)

MGP304

120

Fig.12 Input impedance (series components).

August 1986 8

Philips Semiconductors Product specification

VHF power transistor BLV25

handbook, halfpage

3

RL, X

L

(Ω)

2

1

0

20

Typical values; VCE= 28 V; PL= 175 W;

=25°C; class-B operation.

T

h

R

X

70

L

L

f (MHz)

Fig.13 Load impedance (series components).

MGP305

120

20

handbook, halfpage

G

p

(dB)

10

0

20 120

Typical values; VCE= 28 V; PL= 175 W;

=25°C; class-B operation.

T

h

70

f (MHz)

Fig.14 Power gain as a function of frequency.

MGP306

OPERATING NOTE for Figs 12, 13 and 14:
Below 50 MHz a base-emitter resistor of 4,7 Ω is
recommended to avoid oscillation. This resistor must be
effective for r.f. only.

August 1986 9

Philips Semiconductors Product specification

VHF power transistor BLV25

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 6 leads SOT119A

A

F

q

U

1

H

1

b

2

2

H

U

2

A

1

4

3

b

1

b

e

0 5 10 mm

6

5

C

scale

w

w

2

3

B

p

M

M

C

c

D

1DU3

w

M

AB

1

Q

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

A

UNIT

7.39

mm

6.32

0.291

inches

0.249

OUTLINE

VERSION

SOT119A 97-06-28

5.59

5.33

0.220

0.210

b

1

5.34

5.08

0.210

0.200

c

0.18

0.07

0.007

0.003

Db

12.86

12.59

0.505

0.496

FH

eU

D

1

12.83

12.57

0.505

0.255

0.495

REFERENCES

6.48

2.54

2.28

0.100

0.090

22.10

21.08

0.870

0.830

b

2

4.07

3.81

0.160

0.150

IEC JEDEC EIAJ

H

18.55

18.28

0.730

0.720

qw

p

3.31

2.97

0.130

0.117

Q

4.58

3.98

0.180

0.157

1

U

1

6.48

25.23

6.07

23.95

0.255

0.993

0.239

0.943

EUROPEAN

PROJECTION

2

12.76

12.06

0.502

0.475

August 1986 10

U

3

w

1

2

0.5118.42

0.020.725 0.010.04

ISSUE DATE

w

3

0.261.02

Philips Semiconductors Product specification

VHF power transistor BLV25

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

August 1986 11