Datasheet BLV21 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV21

VHF power transistor

Product specification

August 1986

Philips Semiconductors Product specification

VHF power transistor BLV21

DESCRIPTION

N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions.

QUICK REFERENCE DATA

R.F. performance up to T

MODE OF OPERATION V

= 25 °C in an unneautralized common-emitter class-B circuit

h

CE

V

c.w. 28 175 15 > 10 > 65 1,4 + j1,85 33 − j27,5

PIN CONFIGURATION

handbook, halfpage

1

It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.

f

MHz

P

L

W

4

G
dB

p

η

%

z

I

Ω

PINNING

PIN DESCRIPTION

1 collector
2 emitter
3 base
4 emitter

Y

mS

L

23

MSB057

Fig.1 Simplified outline, SOT123.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

August 1986 2

Philips Semiconductors Product specification

VHF power transistor BLV21

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (V

peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T

BE

= 0)

CESM
CEO

EBO
C(AV)
CM

=25°CP

mb

rf

stg

j

max. 65 V
max. 36 V
max. 4 V
max. 1,75 A
max. 5,0 A
max. 36 W

−65 to + 150 °C

max. 200 °C

handbook, halfpage

2

I

C

(A)

1.5

1

0.5

0

10 20 30 40

Tmb = 25 °C

Th = 70 °C

Fig.2 D.C. SOAR.

VCE (V)

MGP283

60

handbook, halfpage

P

tot

(W)

40

20

0

I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch

ΙΙΙ

ΙΙ

derate by 0.2 W/K

0.16 W/K

Ι

0 50 100

Th (°C)

MGP284

Fig.3 R.F. power dissipation; VCE≤ 28 V; f > 1 MHz.

THERMAL RESISTANCE

(dissipation = 15 W; T

= 74,5 °C, i.e. Th=70°C)

mb

From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R

August 1986 3

th j-mb(dc)
th j-mb(rf)
th mb-h

= 6,55 K/W
= 4,95 K/W
= 0,3 K/W

Philips Semiconductors Product specification

VHF power transistor BLV21

CHARACTERISTICS

=25°C

T

j

Collector-emitter breakdown voltage

VBE= 0; IC= 5 mA V

Collector-emitter breakdown voltage

open base; I

= 25 mA V

C

Emitter-base breakdown voltage

open collector; IE= 2 mA V

Collector cut-off current

V

= 0; VCE= 36 V I

BE

Second breakdown energy; L = 25 mH; f = 50 Hz

open base E
R

=10Ω E

BE

D.C. current gain

I

= 0,7 A; VCE=5 V h

C

Collector-emitter saturation voltage

(1)

(1)

IC= 2 A; IB= 0,4 A V

Transition frequency at f = 100 MHz

(1)

−IE= 0,7 A; VCB= 28 V f

−I

= 2 A; VCB= 28 V f

E

Collector capacitance at f = 1 MHz

I

=0;VCB= 28 V C

E=Ie

Feedback capacitance at f = 1 MHz

I

= 100 mA; VCE= 28 V C

C

Collector-flange capacitance C

(BR) CES

(BR) CEO

(BR)EBO

CES

SBO
SBR

FE

CEsat

T
T

c

re
cf

> 65 V

> 36 V

> 4V

< 2mA

> 2,5 mJ
> 2,5 mJ

typ. 50

10 to 100

typ. 0,65 V

typ. 650 MHz
typ. 625 MHz

typ. 18 pF

typ. 12,8 pF
typ. 2 pF

Note

1. Measured under pulse conditions: t

≤ 200 µs; δ≤0,02.

p

August 1986 4

Philips Semiconductors Product specification

VHF power transistor BLV21

100

handbook, halfpage

h

FE

75

50

25

0

024

VCE = 28 V

5 V

IC (A)

Fig.4 Typical values; Tj=25°C.

MGP285

60

handbook, halfpage

C

c

(pF)

40

20

0

01020 40

Fig.5 IE=Ie= 0; f = 1 MHz; Tj= 25 °C.

typ

30

MGP286

VCB (V)

750

handbook, full pagewidth

f

T

(MHz)

500

250

0

0

1

2

Fig.6 Typical values; f = 100 MHz; Tj= 25 °C.

August 1986 5

MGP287

VCB = 28 V

20 V

3

4

−IE (A)

5

Philips Semiconductors Product specification

VHF power transistor BLV21

APPLICATION INFORMATION

R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit) T

=25°C

h

f (MHz) V

(V) PL(W) PS(W) GP(dB) IC(A) η (%) zi(Ω) YL(mS)

CE

175 28 15 < 1,5 > 10 < 0,83 > 65 1,4 + j1,85 33 − j27,5

handbook, full pagewidth

50 Ω

C1

C2

L4

T.U.T.

L1

L3

L2

C3

C4

L5

L6

+V

CC

C5

C6

L7

R1

MGP253

50 Ω

C7

Fig.7 Test circuit; c.w. class-B.

List of components:

C1 = C7 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C2 = C6 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
C3 = 27 pF ceramic capacitor (500 V)
C4 = 120 pF ceramic capacitor (500 V)
C5 = 100 nF polyester capacitor
L1 = 1 turn Cu wire (1,6 mm); int. dia. 8,4 mm; leads 2 × 5 mm
L2 = 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm
L3 = L8 = Ferroxcube wide band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4 = L5 = strip (12 mm × 6 mm); tap for C3 at 5 mm from transistor
L6 = 3 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 9,0 mm; leads 2 × 5 mm
L7 = 3 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 8,2 mm; leads 2 × 5 mm
L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric,

thickness 1/16".
R1 = R2 = 10 Ω carbon resistor
Component layout and printed-circuit board for 175 MHz test circuit see Fig.8.

August 1986 6

Philips Semiconductors Product specification

VHF power transistor BLV21

handbook, full pagewidth

150

C4

L6

C5 R1

+V

72

CC

rivet

L5

L4

L7

C6

C7

MGP254

C1 C2

L3

L1

L2

C3

Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.

The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.

August 1986 7

Philips Semiconductors Product specification

VHF power transistor BLV21

25

handbook, halfpage

P

L

(W)

20

15

10

5

0

012

Th = 25 °C

70 °C

PS (W)

Fig.9 Typical values; VCE= 28 V; f = 175 MHz.

MGP288

15

handbook, halfpage

G

G

p

(dB)

p

10

η

5

0

51015 25

Th = 25 °C

Th = 25 °C

70 °C

70 °C

20

PL (W)

Fig.10 Typical values; VCE= 28 V; f = 175 MHz.

MGP289

100

η

(%)

50

0

20

handbook, halfpage

P

Lnom

(W)

(VSWR = 1)

15

The graph shows the permissible output power under
nominal conditions (VSWR = 1) as a function of the
expected VSWR during short-time mismatch conditions
with heatsink temperatures as parameter.

10

Fig.11 R.F. SOAR; c.w. class-B operation; f = 175 MHz; VCE= 28 V; R

August 1986 8

MGP290

Th = 50 °C

70 °C

90 °C

110

VSWR

th mb-h

= 0,3 K/W

2

10

Philips Semiconductors Product specification

VHF power transistor BLV21

handbook, halfpage

5

ri, x

i

(Ω)

2.5

−2.5

Typical values; VCE=28V;

= 15W; Th=25°C

P

L

r

i

0

x

i

−5
0 100 200 300

x

i

r

i

f (MHz)

Fig.12 Input impedance (series components).

MGP291

70

handbook, halfpage

R

L

(Ω)

60

50

R

L

40

30

C

L

20

0 200 400

Typical values; VCE=28V;

= 15 W; Th=25°C

P

L

C

L

R

L

f (MHz)

Fig.13 Load impedance (parallel components).

OPERATING NOTE

MGP292

0

C

L

(pF)

−50

−100

25

handbook, halfpage

G

p

(dB)

20

15

10

5

0

0 200 400

Typical values; VCE=28V;

= 15 W; Th=25°C

P

L

Fig.14

f (MHz)

MGP293

Below 100 MHz a base-emitter resistor of 10 Ω is
recommended to avoid oscillation. This resistor must be
effective for r.f. only.

August 1986 9

Philips Semiconductors Product specification

VHF power transistor BLV21

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT123A

D

A

F

H

α

1

H

q

U

1

L

C

B

w

M

C

2

b

43

p

2

0 5 10 mm

scale

A

U

2

w

M

AB

1

c

U

3

Q

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

inches

A

5.82

7.47

mm

OUTLINE
VERSION

SOT123A 97-06-28

6.37

0.294

0.251

5.56

0.229

0.219

c

Db

9.73

0.18

9.47

0.10

0.397

0.383

0.007

0.004

IEC JEDEC EIAJ

0.373

0.371

D

9.63

9.42

F

1

2.72

20.71

2.31

19.93

0.815

0.107

0.091

0.221

0.785

0.203

REFERENCES

5.61

5.16

pH

3.33

3.04

0.131

0.120

Q

4.63

4.11

0.182

0.162

q

18.42

0.725

U

1

25.15

24.38

0.99

0.96

U2U

6.61

6.09

0.26

0.24

w

1

3

9.78

9.39

0.385

0.370

EUROPEAN

PROJECTION

August 1986 10

w

2

1.020.51

0.040.02

ISSUE DATE

αL

45°

Philips Semiconductors Product specification

VHF power transistor BLV21

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

August 1986 11