Datasheet BLV2047 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D372

BLV2047

UHF power transistor

Product specification
Supersedes data of 1999 Jan 28

1999 Jun 09

Philips Semiconductors Product specification

UHF power transistor BLV2047

FEATURES

• Emitter ballasting resistors for optimum
temperature profile

• Gold metallization ensures excellent reliability

• Internal input and output matching for easy design of

wideband circuits

• AlN substrate package for environmental safety.

APPLICATIONS

• Common emitter class-AB operation for PCN
(Personal Communication Networks) and
PCS (Personal Communication Services) base station
applications in the 1800 to 2000 MHz frequency range.

DESCRIPTION

NPN silicon planar power transistor in a 2-lead SOT468A
flange package with ceramic cap. The emitter is connected
to the flange.

QUICK REFERENCE DATA

RF performance at T

=25°C in a common emitter test circuit.

h

PINNING - SOT468A

PIN DESCRIPTION

1 collector
2 base
3 emitter; connected to flange

handbook, halfpage

Top view

Fig.1 Simplified outline.

1

3

2

MBK200

MODE OF OPERATION

f

(MHz)

V

(V)

CE

P

(W)

L

G

p

(dB)

η

(%)

C

d

im

(dBc)

CW, class-AB 2000 26 60 ≥8.5 ≥40 −

2-tone, class-AB f1= 2000.0; f2= 2000.1 26 60 (PEP) ≥9 ≥33 ≤−30

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

collector-base voltage open emitter − 65 V
collector-emitter voltage open base − 27 V
emitter-base voltage open collector − 3V
collector current (DC) − 10 A
total power dissipation Tmb=25°C − 270 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C

1999 Jun 09 2

Philips Semiconductors Product specification

UHF power transistor BLV2047

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

thermal resistance from junction to mounting base P
thermal resistance from mounting base to heatsink 0.25 K/W

Note

1. Thermal resistance is determined under specified RF operating conditions.

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CES

h

FE

C

c

collector-base breakdown voltage open emitter; IC=40mA 65 −−V
collector-emitter breakdown voltage open base; IC= 120 mA 27 −−V
emitter-base breakdown voltage open collector; IE=40mA 3 −−V
collector leakage current VCE= 26 V; VBE=0 −−8mA
DC current gain VCE= 10 V; IC=4A 45 − 100
collector capacitance VCB= 26 V; IE=ie= 0; f = 1 MHz;

note 1

C

re

feedback capacitance VCE= 26 V; IC= 0; f = 1 MHz − 41 − pF

= 270 W; Tmb=25°C; note 1 0.65 K/W

tot

− 72 − pF

Note

1. Capacitance of die only.

120

handbook, halfpage

h

FE

80

40

0

0426810

VCE=10V.

MBK396

I

(A)

C

160

handbook, halfpage

C

re

(pF)

120

80

40

0

0102030

f =1 MHz.

MBK397

V

(V)

CB

Fig.2 DC current gain as a function of collector

current; typical values.

1999 Jun 09 3

Fig.3 Feedback capacitance as a function of

collector-base voltage; typical values.

Philips Semiconductors Product specification

UHF power transistor BLV2047

APPLICATION INFORMATION

RF performance at T

=25°C in a common emitter test circuit.

h

MODE OF OPERATION

f

(MHz)

V

(V)

CE

I

CQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

C

d

im

(dBc)

CW, class-AB 2000 26 300 60 ≥8.5 ≥40 −

= 2000.0

f

2-tone, class-AB

1

f2= 2000.1

CDMA, class-AB 2000 26 500 12.5 typ. 9 typ. 22 ≤−46

26 300 60 (PEP) ≥9 ≥33 ≤−30

(1)

Note

1. CDMA test signal with peak to average ratio of 11.9 dB. Adjacent Channel Power (ACP) is measured at ±885 kHz

offset from the centre of the channel (2000 MHz) using a spectrum analyzer with the resolution set to 30 kHz.

Ruggedness in class-AB operation

The BLV2047 is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases under the
following conditions: f

12

handbook, halfpage

G

p

(dB)

10

8

6

4

= 2000.0 MHz; f2= 2000.1 MHz; VCE= 26 V; ICQ= 300 mA; PL= 60 W (PEP); Tmb=25°C.

1

MBK398

60

η

C

G

p

η

C

(%)

50

40

30

20

100

handbook, halfpage

P

L

(W)

80

60

40

MBK399

(1)
(2)
(3)

2

0

04020 60 80 100

VCE=26V; ICQ= 300mA; f = 2000 MHz.

PL (W)

10

0

Fig.4 Power gain and collector efficiency as a

function of load power; typical values.

1999 Jun 09 4

20

0

08412

ICQ= 300 mA; f = 2000 MHz.
(1) VCE=28V.
(2) VCE=26V.
(3) VCE=24V.

P

(W)

D

Fig.5 Load power as a function of drive power;

typical values.

Philips Semiconductors Product specification

UHF power transistor BLV2047

10

handbook, halfpage

G

p

(dB)

8

6

4

2

0

04020 60 10080

VCE=26V; ICQ= 300 mA; f1= 2000 MHz; f2= 2000.1 MHz.

G

p

η

C

PL (PEP)(W)

Fig.6 Power gain and collector efficiency as

functions of peak envelope load power;
typical values.

MBK400

50

η

C

(%)

40

30

20

10

0

handbook, halfpage

0

d

3

(dBc)

−10

(1)

−20

(2)

−30

(3)

−40

−50

04020

VCE=26V;f1= 2000 MHz; f2= 2000.1 MHz.
(1) ICQ= 100 mA.
(2) ICQ= 300 mA.
(3) ICQ= 500 mA.

MBK401

60 80

PL (PEP)(W)

Fig.7 Intermodulation products as a function of

peak envelope load power; typical values.

handbook, halfpage

0

d

im

(dBc)

−20

d

3

d

−40

−60

04020

VCE= 26 V; ICQ= 300 mA; f1= 2000 MHz; f2= 2000.1 MHz.

5

d

7

MBK402

60 80

PL (PEP)(W)

Fig.8 Intermodulation products as a function of

peak envelope load power; typical values.

handbook, halfpage

0

ACP

(dBc)

−20

−40

−60

04 1281620

VCE= 26 V; ICQ= 500 mA.
Measured at 885 kHz offset with 30 kHz bandwidth.
CDMA test signal with 11.9 dB peak to average ratio.

MBK925

P

L

Fig.9 Adjacent channel power as a function of

load power; typical values.

(W)

1999 Jun 09 5

Philips Semiconductors Product specification

UHF power transistor BLV2047

List of components (see Figs 10 and 11)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C8 multilayer ceramic chip capacitor; note 1 22 pF
C2 Tekelec variable capacitor; type37291 0.8 to 8 pF
C3, C4 Tekelec variable capacitor; type 37271 0.6 to 4.5 pF
C5 multilayer ceramic chip capacitor, note 2 22 pF
C6, C12 tantalum SMD capacitor 10 µF, 35 V
C7 feedthrough capacitor 1.5 nF
C9 multilayer ceramic chip capacitor, note 3 13 pF
C10 multilayer ceramic chip capacitor, note 3 10 nF
C11 feedthrough capacitor 3.3 nF
L1 stripline; note 4 18.8 Ω length 6.1 mm;

width 3.9 mm

L2 stripline; note 4 21.9 Ω length 5 mm;

width 3.2 mm

L3 stripline; note 4 13 Ω length 1.4 mm;

width 6.1 mm

L4 stripline; note 4 4.5 Ω length 6.6 mm;

width 20.2 mm
L5, L14, L15 grade 4B1 ferroxcube chip-bead 4322 020 34420
L6 4 turns enamelled 1 mm copper wire 30 nH int.dia. 3 mm;

length 7 mm
L7 stripline; note 4 7.3 Ω length 4 mm;

width 11.8 mm
L8 stripline; note 4 6.8 Ω length 4 mm;

width 12.8 mm
L9 stripline; note 4 43.7 Ω length 12.5 mm;

width 1 mm
L10 stripline; note 4 5.6 Ω length 8.5 mm;

width 15.9 mm
L11 stripline; note 4 18.8 Ω length 1 mm;

width 3.9 mm
L12 stripline; note 4 53.3 Ω length 3.4 mm;

width 0.8 mm
L13 stripline; note 4 17.4 Ω length 6.5 mm;

width 4.3 mm
R1 standard chip resistor 10 Ω type 0603

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. American Technical Ceramics type 175B or capacitor of same quality.

3. American Technical Ceramics type 100B or capacitor of same quality.

4. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (ε
thickness 0.64 mm.

1999 Jun 09 6

= 6.15);

r

Philips Semiconductors Product specification

UHF power transistor BLV2047

handbook, full pagewidth

40 40

+V

bias

C7

C6

L5

C8

L6 L9

C9

C10

R1

L14

L15

C11

+V

C12

50

CE

50 Ω
input

Dimensions in mm.
The components are situated on one side of the copper-clad Teflon board, the other side is unetched and serves as a ground plane.

Earth connections from the component side to the ground plane are made by through metallization.

C1

L1 L2 L3 L4 L7 L8 L10 L11

C2

L12

C3

L13

C5

output

C4

MBK406

Fig.10 Component layout for 2000 MHz class-AB test circuit.

1999 Jun 09 7

50 Ω

Philips Semiconductors Product specification

UHF power transistor BLV2047

handbook, full pagewidth

+V

bias

50 Ω
input

For CDMA measurements:
Replace L5, C7 and C11 by a bridging wire.
Change L6 from 6 turns to 2 turns (same diameter).
Add 4.7 µF, 50 V tantalum capacitor to C12.
Add 100 pF ATC type 100A capacitor to C8.

C6

C1

C7L5

L6

L4

L3

L1 L2

C2

C9

C8

L7

DUT

C10

L9

L10

L8

L11

C3

Fig.11 Class-AB test circuit for 2000 MHz.

L12

L13

L15
L14

R1

C4

C5

C11

50 Ω

output

MBK405

C12

+V

CE

1999 Jun 09 8

Philips Semiconductors Product specification

UHF power transistor BLV2047

Scattering parameters: VCE= 26 V; IC=1A

f

(MHz)

S

11

MAGNITUDE

(ratio)

ANGLE

(deg)

MAGNITUDE

(ratio)

S

21

ANGLE

MAGNITUDE

(deg)

(ratio)

S

12

ANGLE

MAGNITUDE

(deg)

(ratio)

S

22

ANGLE

(deg)

1500 0.982 173.3 0.169 131.8 0.031 106.4 0.967 174.6
1600 0.970 172.0 0.227 126.1 0.035 96.0 0.953 174.0
1700 0.947 170.4 0.349 114.3 0.037 93.3 0.929 173.8
1800 0.870 167.5 0.633 85.8 0.036 74.7 0.879 174.2
1850 0.779 169.9 0.838 59.5 0.034 60.4 0.845 178.0
1900 0.775 179.3 0.833 22.7 0.018 47.4 0.902 −177.4
1950 0.863 −178.0 0.644 −6.9 0.011 103.7 0.967 −178.7
2000 0.913 −179.4 0.456 −24.5 0.018 121.2 0.990 179.3
2100 0.950 178.0 0.285 −40.8 0.028 114.7 0.995 176.9
2200 0.955 176.4 0.190 −54.0 0.031 115.2 0.987 175.5
2300 0.955 175.0 0.145 −53.6 0.034 114.7 0.983 175.0
2400 0.948 173.7 0.162 −60.4 0.036 116.7 0.975 174.4
2500 0.937 172.4 0.143 −84.2 0.038 116.8 0.973 173.9

Z

(Ω)

5

i

4

handbook, halfpage

MBK403

handbook, halfpage

r

i

Z

(Ω)

3

L

2

MBK404

R

L

3

2

1

0
1700 1900

VCE= 26 V; ICQ= 300 mA; PL= 60 W; Tmb=25°C.

1800 2000

x

i

f (MHz)

Fig.12 Input impedance as a function of frequency

(series components); typical values.

1999 Jun 09 9

1

0

−1

−2

−3

1700 1900

VCE= 26 V; ICQ= 300 mA; PL= 60 W; Tmb=25°C.

X

L

1800 2000

f (MHz)

Fig.13 Load impedance as a function of frequency

(series components); typical values.

Philips Semiconductors Product specification

UHF power transistor BLV2047

PACKAGE OUTLINE

Flanged ceramic (AIN) package; 2 mounting holes; 2 leads SOT468A

D

A

F

3

D

1

U

1

q

C

1

U

H EE

2

A

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

mm

A

5.23

4.62

0.206

0.182

b

11.81

11.58

0.465

0.455

cD E

0.15

15.39

0.10

15,09

0.006

0.606

0.004

0.594

D

1

15.37
15,11

0.605

0.595

10.26

10.06

0.404

0.396

UNIT

inches

b

E

2

w

0 5 10 mm

scale

FHp q

1

10.29

1.65

1.60

0.065

0.063

16.74

16.48

0.659

0.649

10.03

0.405

0.395

M

C

2

3.30

3.05

0.130

0.120

B

c

p

w

M

AB

1

Q

2.21

20.32

2.06

0.087

0.800

0.081

U

1

25.53

25.27

1.005

0.995

1

U

2

9.91

9.65

0.390

0.380

Q

w

0.254

0.01 0.02

w

2

1

0.508

OUTLINE
VERSION

SOT468A 97-12-24

IEC JEDEC EIAJ

REFERENCES

EUROPEAN

PROJECTION

1999 Jun 09 10

ISSUE DATE

Philips Semiconductors Product specification

UHF power transistor BLV2047

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Jun 09 11

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1999 65

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Printed in The Netherlands 125002/06/pp12 Date of release: 1999 Jun 09 Document order number: 9397 750 05856