Datasheet BLV2046 Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLV2046
UHF power transistor
Product specification
1997 Aug 22
Page 2
Philips Semiconductors Product specification
FEATURES
Emitter ballasting resistors for optimum temperature profile
Gold metallization ensures excellent reliability
Internal input and output matching to achieve high
power gain and collector efficiency for an easy design of
PINNING - SOT460A
PIN SYMBOL DESCRIPTION
1 c collector 2 b base 3 e emitter, connected to flange
wideband circuits.
APPLICATIONS
handbook, halfpage
1
Common emitter class-AB operation in PCN and PCS applications in the 1800 to 1990 MHz frequency range.
DESCRIPTION
Top view
2
MBK093
3
NPN silicon planar transistor in a 2-lead SOT460A flange package with a ceramic cap. The emitter is connected to the flange.
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at T
MODE OF
OPERATION
=25°C in a common emitter test circuit
h
f
(MHz)
V
(V)
CE
P
(W)
L
G
p
(dB)
η
(%)
C
CW, class-AB 1990 26 50 7.5 40
2-tone, class-AB f
= 1990.0; f2= 1990.1 26 50 (PEP) typ. 8 typ. 33 typ. 30
1
d
im
(dBc)
WARNING
Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1997 Aug 22 2
Page 3
Philips Semiconductors Product specification
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
R
th mb-h
collector-base voltage open emitter 60 V collector-emitter voltage open base 27 V emitter-base voltage open collector 2.5 V collector current (DC) 12 A average collector current 12 A total power dissipation Tmb=25°C 195 W storage temperature 65 +150 °C operating junction temperature 200 °C
thermal resistance from junction to mounting-base P
= 195 W; Tmb=25°C 0.9 K/W
dis
thermal resistance from mounting-base to heatsink 0.2 K/W
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
C
c
collector-base breakdown voltage IC= 20 mA; open emitter 65 −−V collector-emitter breakdown voltage IC= 60 mA; open base 27 −−V emitter-base breakdown voltage IE= 20 mA; IB= 30 mA; open collector 3.2 −−V collector-base leakage current VCB= 40 V; IE=0 −−4mA DC current gain VCE=5V; IC=1 A 20 100 collector capacitance VCB= 26 V; IE=ie= 0; f = 1 MHz;
60 pF
note 1
C
re
feedback capacitance VCE= 26 V; IC= 0; f = 1 MHz 40 pF
Note
1. Die only.
1997 Aug 22 3
Page 4
Philips Semiconductors Product specification
APPLICATION INFORMATION
RF performance at T
=25°C in a common-emitter test circuit.
h
MODE OF
OPERATION
f
(MHz)
V
(V)
CE
I
CQ
(mA)
P
(W)
L
G
p
(dB)
η
(%)
C
d
im
(dBc)
CW class-AB 1990 26 200 50 7.5 40
2-tone class-AB f1= 1990.0; f2= 1990.1 26 200 50 (PEP) typ. 8 typ. 33 typ. 30
Ruggedness in class-AB operation
The BLV2046 is capable of withstanding a load mismatch corresponding to VSWR = 2:1 through all phases under the following conditions: f
10
handbook, halfpage
G
p
(dB)
8
6
4
= 1990.0 MHz; f2= 1990.1 MHz; VCE= 26 V; ICQ= 200 mA; PL= 50 W (PEP) and Th=25°C.
1
MDA208
50
η
C
G
p
η
C
(%)
40
30
20
60
handbook, halfpage
P
L
(W)
40
20
MDA209
2
0
0204060
VCE=26V; ICQ= 200 mA; f = 1990 MHz.
PL (W)
10
0
Fig.2 Power gain and efficiency as a function of
load power; typical values.
0
010
VCE=26V; ICQ= 200 mA; f = 1990 MHz.
2468
PD (W)
Fig.3 Load power as a function of drive power;
typical values.
1997 Aug 22 4
Page 5
Philips Semiconductors Product specification
10
handbook, halfpage
G
p
(dB)
8
6
4
2
0
3
10
VCE= 26 V;f = 1990 MHz. (1) ICQ= 600 mA. (2) ICQ= 400 mA.
(1) (2)
(3)
(4)
2
10
1
10
(3) ICQ= 200 mA. (4) ICQ= 100 mA.
MDA213
110
PD (W)
Fig.4 Power gain expansion as a function of drive
power; typical values.
10
handbook, halfpage
G
p
(dB)
8
6
4
2
0
0
VCE=26V;f1= 1990 MHz; f2= 1990.1 MHz. (1) ICQ= 600 mA. (2) ICQ= 400 mA.
(1) (2)
(3)
(4)
11010
(3) ICQ= 200 mA. (4) ICQ= 100 mA.
MDA214
PL (PEP) (W)
Fig.5 Power gain expansion as a function of load
power; typical values.
2
handbook, halfpage
0
d
3
(dBc)
10
20
(1)
30
40
50
VCE=26V;f1= 1990 MHz; f2= 1990.1 MHz. (1) ICQ= 100 mA. (2) ICQ= 200 mA.
(2)
(3)
(4)
020 60
(3) ICQ= 400 mA. (4) ICQ= 600 mA.
40
MDA215
PL (PEP) (W)
Fig.6 Intermodulation distortion as a function of
load power; typical values.
0
handbook, halfpage
d
im
(dBc)
20
d
3
40 d
5
60
0
VCE= 26 V; ICQ= 200 mA; f1= 1990 MHz; f2= 1990.1 MHz.
20 40 60
MDA216
PL (PEP) (W)
Fig.7 Intermodulation distortion as a function of
load power; typical values.
1997 Aug 22 5
Page 6
Philips Semiconductors Product specification
V
handbook, full pagewidth
input 50
L3
(+26 V)
CE
C10C9R1
R2
L4
C1
P1
TR1
C4
R3
C11
F1
T1
C6
L1
L8
L7
D1 D2
S3
S1
L5
L6
V
(+26 V)
CE
C5
C7
L2
L9
L10
L11
L12
C8
L13
L14
L15
output
50
MGK450
S2
S4
C2
C3
Fig.8 Class-AB test circuit for 1990 MHz.
List of components
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C8 multilayer ceramic chip capacitor; note 1 30 pF C2, C3 trimmer capacitor 0.4 to 2.5 pF C4, C5 feedthrough bypass capacitor 1500 pF C6, C7 tantal SMD capacitor 10 µF; 35 V C9 electrolytic capacitor 10 µF; 100 V C10 multilayer ceramic chip capacitor 22 nF 2222 629 08223 C11 electrolytic capacitor 10 µF; 63 V L1 5 turns enamelled 0.5 mm copper wire int. dia.=4mm;
length = 6.7 mm
L2 2 turns enamelled 0.5 mm copper wire int. dia.=4mm;
length = 2.7 mm L3 stripline; note 2 48.8 5.34 × 0.59 mm L4 stripline; note 2 17 1.2 × 3.23 mm L5 stripline; note 2 48.8 2.93 × 0.59 mm
1997 Aug 22 6
Page 7
Philips Semiconductors Product specification
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
L6 stripline; note 2 48.8 6.63 × 0.59 mm L7 stripline; note 2 17.1 1.6 × 3.2 mm L8 stripline; note 2 6.8 6 × 9.6 mm L9 stripline; note 2 6.8 9.11 × 9.6 mm L10 stripline; note 2 16.6 5.09 × 3.32 mm L11 stripline; note 2 10.9 0.85 × 5.59 mm L12 stripline; note 2 31.9 9.26 × 1.3 mm L13 stripline; note 2 48.8 0.24 × 0.59 mm L14 stripline; note 2 11.9 1.15 × 5.04 mm L15 stripline; note 2 48.8 2.5 × 0.59 mm S1 stub; note 2 2.4 × 2.17 mm S2 stub; note 2 2.4 × 3.04 mm S3 stub; note 2 0.9 × 8.63 mm S4 stub; note 2 0.9 × 7.29 mm T1 taper; note 2 1.3 × 2.7 / 3.2 mm F1 grade 4B1 ferrite bead 4330 030 43081 P1 linear potentiometer 5 k R1 resistor 100 , 3 W R2 resistor 1 k, 0.25 W R3 resistor 56 , 3 W TR1 transistor BD241C D1 diode, note 3 BY239 D2 diode, note 4 BY239
Notes
1. American Technical Ceramics type 100A (C1), type 100B (C8) or capacitor of same quality.
2. The striplines are on a double copper-clad PCB with duroid 6010 dielectric (εr= 10.2); thickness 0.635 mm.
3. In thermal contact with TR1.
4. In thermal contact with DUT.
1997 Aug 22 7
Page 8
Philips Semiconductors Product specification
handbook, full pagewidth
30 30
40
C4
+V
BE
C5
+V
CE
input 50
C1
Dimensions in mm. The components are situated on one side of the copper-clad board, the other side is unetched and serves as a ground plane. Earth connections from the
component side to the ground plane are made by through metallization.
C6
F1
L1
C2
C3
C7
L2
C8
MGK451
output
50
Fig.9 Component layout and printed-circuit board for 1990 MHz class-AB test circuit.
1997 Aug 22 8
Page 9
Philips Semiconductors Product specification
handbook, halfpage
3
Z
i
()
2
1
0 1800
VCE= 26 V; ICQ= 400 mA; PL= 50 W; Tmb=25°C.
1850 1900 20001950
r
i
x
i
MDA210
f (MHz)
Fig.10 Input impedance as function of the frequency
(series components); typical values.
handbook, halfpage
4
Z
L
()
2
0
2
4
1800 1850 1900 2000
VCE= 26 V; ICQ= 400 mA; PL= 50 W; Tmb=25°C.
R
L
X
L
1950
Fig.11 Load impedance as a function of the
frequency (series components); typical values.
MDA211
f (MHz)
16
handbook, halfpage
G
p
(dB)
12
8
4
0 1800 1850 1900 2000
VCE= 26 V; ICQ= 200 mA; PL= 50 W; Tmb=25°C.
1950
Fig.12 Gain as a function of the frequency;
typical values.
MDA212
f (MHz)
handbook, halfpage
Z
i
Z
L
Fig.13 Definition of transistor impedance.
MBA451
1997 Aug 22 9
Page 10
Philips Semiconductors Product specification
PACKAGE OUTLINE
Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT460A
D
A
F
3
U
1
q
1
L
U
2
A
L
p
2
w
b
0 5 10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
M
2
B
C
w
M
AB
1
C
c
E
Q
3.28
3.02
Q
2.37
1.95
U
1
22.99
22.73
U
6.43
6.17
w
1
0.5117.98
PROJECTION
w
2
1.02
EUROPEAN
2
UNIT
A
5.39
mm
4.49
OUTLINE VERSION
SOT460A 97-05-23
b
9.78
9.52
cD
12.45
0.16
11.68
0.07
IEC JEDEC EIAJ
FLp q
E
6.94
1.66
1.39
REFERENCES
6.10
5.33
6.22
1997 Aug 22 10
ISSUE DATE
Page 11
Philips Semiconductors Product specification
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Aug 22 11
Page 12
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© Philips Electronics N.V. 1997 SCA55 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands 127067/00/01/pp12 Date of release: 1997 Aug 22 Document order number: 9397 750 01823
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