Datasheet BLV2046 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV2046

UHF power transistor

Product specification

1997 Aug 22

Philips Semiconductors Product specification

UHF power transistor BLV2046

FEATURES

• Emitter ballasting resistors for optimum temperature
profile

• Gold metallization ensures excellent reliability

• Internal input and output matching to achieve high

power gain and collector efficiency for an easy design of

PINNING - SOT460A

PIN SYMBOL DESCRIPTION

1 c collector
2 b base
3 e emitter, connected to flange

wideband circuits.

APPLICATIONS

handbook, halfpage

1

• Common emitter class-AB operation in PCN and PCS
applications in the 1800 to 1990 MHz frequency range.

DESCRIPTION

Top view

2

MBK093

3

NPN silicon planar transistor in a 2-lead SOT460A flange
package with a ceramic cap. The emitter is connected to
the flange.

Fig.1 Simplified outline.

QUICK REFERENCE DATA

RF performance at T

MODE OF

OPERATION

=25°C in a common emitter test circuit

h

f

(MHz)

V

(V)

CE

P

(W)

L

G

p

(dB)

η

(%)

C

CW, class-AB 1990 26 50 ≥7.5 ≥40 −

2-tone, class-AB f

= 1990.0; f2= 1990.1 26 50 (PEP) typ. 8 typ. 33 typ. −30

1

d

im

(dBc)

WARNING

Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location
of the user. It must never be thrown out with the general or domestic waste.

1997 Aug 22 2

Philips Semiconductors Product specification

UHF power transistor BLV2046

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

R

th mb-h

collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 27 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 12 A
average collector current − 12 A
total power dissipation Tmb=25°C − 195 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C

thermal resistance from junction to mounting-base P

= 195 W; Tmb=25°C 0.9 K/W

dis

thermal resistance from mounting-base to heatsink 0.2 K/W

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

h

FE

C

c

collector-base breakdown voltage IC= 20 mA; open emitter 65 −−V
collector-emitter breakdown voltage IC= 60 mA; open base 27 −−V
emitter-base breakdown voltage IE= 20 mA; IB= 30 mA; open collector 3.2 −−V
collector-base leakage current VCB= 40 V; IE=0 −−4mA
DC current gain VCE=5V; IC=1 A 20 − 100
collector capacitance VCB= 26 V; IE=ie= 0; f = 1 MHz;

− 60 − pF

note 1

C

re

feedback capacitance VCE= 26 V; IC= 0; f = 1 MHz − 40 − pF

Note

1. Die only.

1997 Aug 22 3

Philips Semiconductors Product specification

UHF power transistor BLV2046

APPLICATION INFORMATION

RF performance at T

=25°C in a common-emitter test circuit.

h

MODE OF

OPERATION

f

(MHz)

V

(V)

CE

I

CQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

C

d

im

(dBc)

CW class-AB 1990 26 200 50 ≥7.5 ≥40 −

2-tone class-AB f1= 1990.0; f2= 1990.1 26 200 50 (PEP) typ. 8 typ. 33 typ. −30

Ruggedness in class-AB operation

The BLV2046 is capable of withstanding a load mismatch corresponding to VSWR = 2:1 through all phases under the
following conditions: f

10

handbook, halfpage

G

p

(dB)

8

6

4

= 1990.0 MHz; f2= 1990.1 MHz; VCE= 26 V; ICQ= 200 mA; PL= 50 W (PEP) and Th=25°C.

1

MDA208

50

η

C

G

p

η

C

(%)

40

30

20

60

handbook, halfpage

P

L

(W)

40

20

MDA209

2

0

0204060

VCE=26V; ICQ= 200 mA; f = 1990 MHz.

PL (W)

10

0

Fig.2 Power gain and efficiency as a function of

load power; typical values.

0

010

VCE=26V; ICQ= 200 mA; f = 1990 MHz.

2468

PD (W)

Fig.3 Load power as a function of drive power;

typical values.

1997 Aug 22 4

Philips Semiconductors Product specification

UHF power transistor BLV2046

10

handbook, halfpage

G

p

(dB)

8

6

4

2

0

−3

10

VCE= 26 V;f = 1990 MHz.
(1) ICQ= 600 mA.
(2) ICQ= 400 mA.

(1)
(2)

(3)

(4)

−2

10

−1

10

(3) ICQ= 200 mA.
(4) ICQ= 100 mA.

MDA213

110

PD (W)

Fig.4 Power gain expansion as a function of drive

power; typical values.

10

handbook, halfpage

G

p

(dB)

8

6

4

2

0

0

VCE=26V;f1= 1990 MHz; f2= 1990.1 MHz.
(1) ICQ= 600 mA.
(2) ICQ= 400 mA.

(1)
(2)

(3)

(4)

11010

(3) ICQ= 200 mA.
(4) ICQ= 100 mA.

MDA214

PL (PEP) (W)

Fig.5 Power gain expansion as a function of load

power; typical values.

2

handbook, halfpage

0

d

3

(dBc)

−10

−20

(1)

−30

−40

−50

VCE=26V;f1= 1990 MHz; f2= 1990.1 MHz.
(1) ICQ= 100 mA.
(2) ICQ= 200 mA.

(2)

(3)

(4)

020 60

(3) ICQ= 400 mA.
(4) ICQ= 600 mA.

40

MDA215

PL (PEP) (W)

Fig.6 Intermodulation distortion as a function of

load power; typical values.

0

handbook, halfpage

d

im

(dBc)

−20

d

3

−40
d

5

−60

0

VCE= 26 V; ICQ= 200 mA; f1= 1990 MHz; f2= 1990.1 MHz.

20 40 60

MDA216

PL (PEP) (W)

Fig.7 Intermodulation distortion as a function of

load power; typical values.

1997 Aug 22 5

Philips Semiconductors Product specification

UHF power transistor BLV2046

V

handbook, full pagewidth

input
50 Ω

L3

(+26 V)

CE

C10C9R1

R2

L4

C1

P1

TR1

C4

R3

C11

F1

T1

C6

L1

L8

L7

D1
D2

S3

S1

L5

L6

V

(+26 V)

CE

C5

C7

L2

L9

L10

L11

L12

C8

L13

L14

L15

output

50 Ω

MGK450

S2

S4

C2

C3

Fig.8 Class-AB test circuit for 1990 MHz.

List of components

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C8 multilayer ceramic chip capacitor; note 1 30 pF
C2, C3 trimmer capacitor 0.4 to 2.5 pF
C4, C5 feedthrough bypass capacitor 1500 pF
C6, C7 tantal SMD capacitor 10 µF; 35 V
C9 electrolytic capacitor 10 µF; 100 V
C10 multilayer ceramic chip capacitor 22 nF 2222 629 08223
C11 electrolytic capacitor 10 µF; 63 V
L1 5 turns enamelled 0.5 mm copper wire int. dia.=4mm;

length = 6.7 mm

L2 2 turns enamelled 0.5 mm copper wire int. dia.=4mm;

length = 2.7 mm
L3 stripline; note 2 48.8 Ω 5.34 × 0.59 mm
L4 stripline; note 2 17 Ω 1.2 × 3.23 mm
L5 stripline; note 2 48.8 Ω 2.93 × 0.59 mm

1997 Aug 22 6

Philips Semiconductors Product specification

UHF power transistor BLV2046

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

L6 stripline; note 2 48.8 Ω 6.63 × 0.59 mm
L7 stripline; note 2 17.1 Ω 1.6 × 3.2 mm
L8 stripline; note 2 6.8 Ω 6 × 9.6 mm
L9 stripline; note 2 6.8 Ω 9.11 × 9.6 mm
L10 stripline; note 2 16.6 Ω 5.09 × 3.32 mm
L11 stripline; note 2 10.9 Ω 0.85 × 5.59 mm
L12 stripline; note 2 31.9 Ω 9.26 × 1.3 mm
L13 stripline; note 2 48.8 Ω 0.24 × 0.59 mm
L14 stripline; note 2 11.9 Ω 1.15 × 5.04 mm
L15 stripline; note 2 48.8 Ω 2.5 × 0.59 mm
S1 stub; note 2 2.4 × 2.17 mm
S2 stub; note 2 2.4 × 3.04 mm
S3 stub; note 2 0.9 × 8.63 mm
S4 stub; note 2 0.9 × 7.29 mm
T1 taper; note 2 1.3 × 2.7 / 3.2 mm
F1 grade 4B1 ferrite bead 4330 030 43081
P1 linear potentiometer 5 kΩ
R1 resistor 100 Ω, 3 W
R2 resistor 1 kΩ, 0.25 W
R3 resistor 56 Ω, 3 W
TR1 transistor BD241C
D1 diode, note 3 BY239
D2 diode, note 4 BY239

Notes

1. American Technical Ceramics type 100A (C1), type 100B (C8) or capacitor of same quality.

2. The striplines are on a double copper-clad PCB with duroid 6010 dielectric (εr= 10.2); thickness 0.635 mm.

3. In thermal contact with TR1.

4. In thermal contact with DUT.

1997 Aug 22 7

Philips Semiconductors Product specification

UHF power transistor BLV2046

handbook, full pagewidth

30 30

40

C4

+V

BE

C5

+V

CE

input
50 Ω

C1

Dimensions in mm.
The components are situated on one side of the copper-clad board, the other side is unetched and serves as a ground plane. Earth connections from the

component side to the ground plane are made by through metallization.

C6

F1

L1

C2

C3

C7

L2

C8

MGK451

output

50 Ω

Fig.9 Component layout and printed-circuit board for 1990 MHz class-AB test circuit.

1997 Aug 22 8

Philips Semiconductors Product specification

UHF power transistor BLV2046

handbook, halfpage

3

Z

i

(Ω)

2

1

0
1800

VCE= 26 V; ICQ= 400 mA; PL= 50 W; Tmb=25°C.

1850 1900 20001950

r

i

x

i

MDA210

f (MHz)

Fig.10 Input impedance as function of the frequency

(series components); typical values.

handbook, halfpage

4

Z

L

(Ω)

2

0

−2

−4

1800 1850 1900 2000

VCE= 26 V; ICQ= 400 mA; PL= 50 W; Tmb=25°C.

R

L

X

L

1950

Fig.11 Load impedance as a function of the

frequency (series components); typical
values.

MDA211

f (MHz)

16

handbook, halfpage

G

p

(dB)

12

8

4

0
1800 1850 1900 2000

VCE= 26 V; ICQ= 200 mA; PL= 50 W; Tmb=25°C.

1950

Fig.12 Gain as a function of the frequency;

typical values.

MDA212

f (MHz)

handbook, halfpage

Z

i

Z

L

Fig.13 Definition of transistor impedance.

MBA451

1997 Aug 22 9

Philips Semiconductors Product specification

UHF power transistor BLV2046

PACKAGE OUTLINE

Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT460A

D

A

F

3

U

1

q

1

L

U

2

A

L

p

2

w

b

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

M

2

B

C

w

M

AB

1

C

c

E

Q

3.28

3.02

Q

2.37

1.95

U

1

22.99

22.73

U

6.43

6.17

w

1

0.5117.98

PROJECTION

w

2

1.02

EUROPEAN

2

UNIT

A

5.39

mm

4.49

OUTLINE
VERSION

SOT460A 97-05-23

b

9.78

9.52

cD

12.45

0.16

11.68

0.07

IEC JEDEC EIAJ

FLp q

E

6.94

1.66

1.39

REFERENCES

6.10

5.33

6.22

1997 Aug 22 10

ISSUE DATE

Philips Semiconductors Product specification

UHF power transistor BLV2046

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Aug 22 11

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© Philips Electronics N.V. 1997 SCA55
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Printed in The Netherlands 127067/00/01/pp12 Date of release: 1997 Aug 22 Document order number: 9397 750 01823