Datasheet BLV2045N Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D171

BLV2045N

UHF power transistor

Preliminary specification

1999 Apr 23

Philips Semiconductors Preliminary specification

UHF power transistor BLV2045N

FEATURES

• Emitter ballasting resistors for optimum temperature
profile

• Gold metallization ensures excellent reliability

• Internal input and output matc hing fo r an easy design of

wideband circuits.

APPLICATIONS

PINNING - SOT390A

PIN SYMBOL DESCRIPTION

1 c collector
2bbase
3 e emitter, connected to flange

handbook, halfpage

1

• Common emitter class-AB operation in PCN and PCS
applications in the 1800 to 2000 MHz frequency range.

2

3

DESCRIPTION

NPN silicon planar UHF power transistor in a 2-lead

Top view

MSA470

SOT390A flange package with a ceramic ca p. The emitter
is connected to the flange.

Fig.1 Simplified outline.

QUICK REFERENCE DATA

RF performance at T

MODE OF

OPERATION

=25°C in a common emitter test circuit.

h

f

(MHz)

V

(V)

CE

P

(W)

L

G

p

(dB)

η

(%)

C

CW, class-AB 1990 26 35 typ. 9.5 typ. 43 −

2-tone, class-AB f

= 1990.0; f2= 1990.1 26 35 (PEP) ≥9.5 ≥33 ≤−30

1

d

im

(dBc)

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

collector-base voltage open emitter − 65 V
collector-emitter voltage open base − 27 V
emitter-base voltage open collector − 3V
collector current (DC) − 4A
average collector current − 4A
total power dissipation Tmb=25°C − 125 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C

WARNING

Product and environmental safety - toxic materials.
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location
of the user. It must never be thrown out with the general or domestic waste.

1999 Apr 23 2

Philips Semiconductors Preliminary specification

UHF power transistor BLV2045N

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CES

h

FE

C

c

C

re

thermal resistance from junction to

PL=35W; ηC= 40 %; Tmb=25°C1.4K/W

mounting base
thermal resistance from mounting

0.4 K/W

base to heatsink

collector-base breakdown

open emitter; IC=20mA 65 −−V

voltage
collector-emitter breakdown

open base; IC=60mA 27 −−V

voltage
emitter-base breakdown

open collector; IE=40mA 3 −−V

voltage
collector leakage current VCE=26V; VBE=0 −−4mA
DC current gain VCE=10V; IC=2A 45 − 100
collector capacitance VCB=26V; IE=ie=0;

− t.b.f. − pF

f = 1 MHz; note 1

feedback capac itanc e VCE=26V; IC= 0;

− t.b.f. − pF

f=1MHz

Note

1. Capacitance of die only.

APPLICATION INFORMATION

RF performance at T

MODE OF

OPERATION

=25°C in a common emitter test circuit.

h

f

(MHz)

V

(V)

CE

I

CQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

C

d

im

(dBc)

CW, class-AB 1990 26 150 35 typ. 9.5 typ. 43 −

2-tone, class-AB

= 1990.0; f2= 1990.1

f

1

26 150 35 (PEP)

≥9.5

typ. 10.2

≥33

typ. 35

≤−30

typ. −32

Ruggedness in class-AB operation

The BLV2045N is capable of with standi ng a load mismatch correspon ding to VSWR = 3 : 1 through all phases under the
following conditions: f

= 1990.0 MHz; f2= 1990.1 MHz; VCE= 26 V; ICQ= 150 mA; PL= 35 W (PEP); Tmb=25°C.

1

1999 Apr 23 3

Philips Semiconductors Preliminary specification

UHF power transistor BLV2045N

12

G

P

(dB)

8

4

0

0 10203040

G

P

η

C

P

(W)

L

VCE=26V; ICQ= 150 mA; f = 1990 M Hz.

Fig.2 Power gain and collector efficiency as

functions of load power; typical values.

60

η

C

(%)

50

40

30

20

10

0

12

G

P

(dB)

8

4

0

0 10203040

G

P

η

C

(PEP) (W)

P

L

60

η

C

(%)

50

40

30

20

10

0

VCE=26V; ICQ= 150mA; f1= 1990 MHz;f2=1990.1MHz

Fig.3 Power gain and collector efficiency as

functions of peak envelope load power;
typical values.

0

d

im

(dBc)

-20

d

3

-40

-60
0 10203040

d

5

P

(PEP) (W)

L

VCE=26V; ICQ= 150 m A; f1= 1990 MHz; f2= 1990.1 MHz.

Fig.4 Intermodulation distortion as a function of

peak envelope load power; typical values.

1999 Apr 23 4

Philips Semiconductors Preliminary specification

UHF power transistor BLV2045N

Vbb

C1

Vb

L1

R1

R1

C8

C8 C9

C2

C11C10C9

L2

C10

C11

L3

L7

C12

L4

C12

L5

L6

L6

L5

C3

C4

C3

C4

L8

C5

L9

C13

C13

L13

L12

L12

L10

L11

Vcc

C16C15C14

L11

50 OHm output50 OHm input

C7

C6

Vc

C16C15

C14

40 mm

C1

C2

C7

C6

C5

30 mm

Dimensions in mm
The components are situated on one side of the copper-clad board, the other side is unetched and serves as a ground plane. Earth connections

from the component side to the ground plane are made by through metallization.

Fig.5 1990 MHz class-AB testcircuit and component layout

1999 Apr 23 5

30 mm

Philips Semiconductors Preliminary specification

UHF power transistor BLV2045N

List of components

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1 Tekelec variable capacitor; type A T 37281 0.4 to 2.5 pF
C2, C7 multilayer ceramic chip capacitor; note 1 30pF
C3 multilayer ceramic chip capacitor; note 2 2.4 pF
C4 multilayer ceramic chip capacitor; note 2 1.8 pF
C5 Tekelec variable capacitor; type A T 37271 0.6 to 4.5 pF
C6 multilayer ceramic chip capacitor; note 2 1.3 pF
C8, C14 tantal SMD capacitor 35 V; 10 µF
C9, C10, C11,

C15, C16
C12, C13 multilayer ceramic chip capacitor; note 2 20 pF
L1 stripline; note 3 50 Ω 8x1mm
L2 stripline; note 3 20.5 Ω 2.5x3.5mm
L3 stripline; note 3 29.8 Ω 5.6x2.1mm
L4 stripline; note 3 1 1 Ω 2.0x7.4mm
L5 stripline; note 3 13.2 Ω 7.2x6.0mm
L6 5 turns enamelled 1 mm copper wire int. dia. = 3.3 mm;

L7 EMI filter; type NFM61RH20T332 3300 pF
L8 stripline; note 3 1 1.5Ω 6.6x7.1mm
L9 stripline; note 3 6.9 Ω 6.4 x 12.6 mm
L10 stripline; note 3 35.8 Ω 9.9x1.6mm
L1 1 stripline; note 3 14.4 Ω 2.7x5.4mm
L12 2 turns enamelled 1 mm copper wire int. dia. = 3.3 mm;

L13 EMI filter; type NFM60RH20T152 1500 pF
R1 chip resistor 2.2 Ω

multilayer ceramic chip capacitor 100 nF

length = 6 mm

length = 2.5 mm

Notes

1. American Technical Ceramics type 100A or capacitor of same quality

2. American Technical Ceramics type 100B or capacitor of same quality

3. The striplines are on a double copper-clad PCB ε

1999 Apr 23 6

= 6.15; thickness 0.64mm.

r

Philips Semiconductors Preliminary specification

UHF power transistor BLV2045N

4

Z

i

(Ω)

r

3

2

1

0

1800 1900 2000

i

x

i

f (MHz)

VCE=26V; ICQ= 150 m A; PL=35W; Tmb=25°C.

Fig.6 Input i mpedance as a functi on of frequency

(series components); typical values.

6

Z

L

(Ω)

4

2

0

-2
1800 1900 2000

Z

L

X

L

f (MHz)

VCE=26V; ICQ= 150mA; PL=35W; Tmb=25°C.

Fig.7 Load i mpedance as a functi on of frequency

(series components); typical values.

12

G

P

(dB)

8

4

0

1800 1900 2000

G

P

η

C

f (MHz)

60

η

C

(%)

50

40

30

20

10

0

book, halfpage

Z

i

Z

MBA451

L

VCE=26V; ICQ= 150 m A; PL=35W; Tmb=25°C.

Fig.8 Power gain and collector efficiency as

functions of frequency; typical values.

Fig.9 Definition of transistor impedance.

1999 Apr 23 7

Philips Semiconductors Preliminary specification

UHF power transistor BLV2045N

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 2 leads SOT390A

D

A

F

3

D

1

U

1

q

C

1

L

U

2

A

L

p

2

w

scale

M M

2

C

b

0 5 10 mm

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

B

w

M M M

1

E

AB

c

E

1

Q

3.43

3.17

Q

2.32

2.00

0.091

0.079

U

1

19.03

18.77

0.749

0.739

U

w

2

1

6.43

0.2514.22

6.17

0.253

0.0100.560 0.020

0.243

EUROPEAN

PROJECTION

w

2

0.51

ISSUE DATE

UNIT

mm

inches

A

5.03

4.22

0.198

0.225

0.166

0.215

OUTLINE

VERSION

SOT390A 99-03-29

b

5.72

5.46

cD

8.18

0.16

8.08

0.10

0.322

0.318

0.325

0.315

0.006

0.004

IEC JEDEC EIAJ

EFLpq

D

8.26

8.00

1

6.40

6.30

0.252

0.248

E

1

6.43

1.66

6.17

1.39

0.065

0.253

0.055

0.243

REFERENCES

6.10

5.33

0.24

0.21

0.135

0.125

1999 Apr 23 8

Philips Semiconductors Preliminary specification

UHF power transistor BLV2045N

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such a pplic ations do so at thei r own ri sk and agree to fully inde mnify Philips for any d amages resulting from such
improper use or sale.

1999 Apr 23 9

Philips Semiconductors – a worldwide company

Argentina: see South Ameri ca
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel.[phone],Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see Th e Neth erla nd s
Brazil: seeSouth Americ a
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bour chier Blvd., 1407 SOFIA ,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel.[phone], Fax. [phone]

China/Hong Kong: 5 01 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel.[phone], Fax. [phone]

Colombia: see Sou th Am eri ca
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel.[phone],Fax.[phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel.[phone],Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone],Fax. [phone]

Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.9 9-10 0, JAK AR TA 12510 ,
Tel.[phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TELAVIV61180, Tel.[phone],Fax.[phone]

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124MILANO, Tel.[phone], Fax. [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108 -850 7, Tel . [phone], Fa x. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel.[phone],Fax.[phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone], Fax [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel.[phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel.[phone], Fax. [phone]
Norway: Box 1, Manglerud0612, OSLO,

Tel.[phone],Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Villag e, P.O. Bo x 21 08 M CC , M AKA TI,
Metro MANILA, Tel.[phone],Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel.[phone],Fax. + 48 22 6122327

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 M OSC OW,

Tel.[phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel.[phone], Fax. [phone]

Slovakia: see Austri a
Slovenia: see Ita ly
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel.[phone],Fax. + 27 11 4705494

South Americ a: Al. Vicente Pinzon, 173, 6th floor,
04547-130 S ÃO P A UL O, S P, Brazil,
Tel.[phone],Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel.[phone],Fax. + 34 93 3014107

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel.[phone],Fax.[phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel.[phone]Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Tai wan Tel. [phone] , Fa x. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel.[phone], Fax. [phone]

Turkey: Talatpa sa Cad. No. 5, 80640 GÜLTEPE/ ISTA NB UL ,
Tel.[phone], Fax. [phone]

Ukrain e: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semicond uctors L td., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel.[phone], Fax.[phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIP S , Trg N . Pasica 5/v, 110 00 BEOGRA D,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD E INDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1999 SCA63
All rights are reserved. Reproducti on in whole or in part is prohibited witho ut the prior written consent of the copyrigh t owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liabil ity will be accepte d by the publisher for any conseque nce of its use. Publicatio n thereo f does not con vey nor imply any license
under patent- or other industrial or intell ectua l prope rty rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands budgetnum/printrun/ed/pp10 Date of release: 1999 Apr 23 Document order number: 9397 750 05828