Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLV2042
UHF power transistor
Product specification
Supersedes data of 1996 Feb 09
1997 Jul 11
Page 2
Philips Semiconductors Product specification
UHF power transistor BLV2042
FEATURES
• Emitter ballasting resistors for optimum
temperature profile
• Gold metallization ensures excellent reliability
• Internal input matching to achieve high power gain and
easy design of wideband circuits.
APPLICATIONS
• Common emitter class-AB operation in base stations in
the 1800 to 1990 MHz frequency range.
DESCRIPTION
NPN silicon planar epitaxial power transistor in an 8-lead
SOT409B SMD package with ceramic cap.
All leads are isolated from the mounting base.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
=25°C in a common emitter test circuit.
mb
f
(MHz)
CW, class-AB 1950 26 4 ≥11 ≥40 −
CW, class-AB 1990 26 4 ≥11 ≥40 −
2-tone, class-AB f
= 1950; f2= 1950.1 26 4 (PEP) typ. 14 typ. 35 typ. −30
1
PINNING - SOT409B
PIN DESCRIPTION
1, 4, 5, 8 emitter
2, 3 base
6, 7 collector
handbook, halfpage
85
14
Top view
Fig.1 Simplified outline and symbol.
V
(V)
CE
P
(W)
L
G
(dB)
c
b
MSA467
p
η
C
(%)
e
d
im
(dBc)
1997 Jul 11 2
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Philips Semiconductors Product specification
UHF power transistor BLV2042
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
Note
1. Transistor with metallized ground plane mounted on a printed-circuit board, see
recommendations in the General part of handbook SC19a”
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 28 V
emitter-base voltage open collector − 4V
collector current (DC) − 1.2 A
collector current (average) − 1.2 A
total power dissipation Tmb=25°C; note 1 − 17 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C
“Mounting and soldering
.
10
handbook, halfpage
I
C
(A)
1
−1
10
11010
(1) Ts=60°C.
Fig.2 DC SOAR.
MGD934
(1)
V
(V)
CE
2
16
handbook, halfpage
P
tot
(W)
12
8
4
0
0 40 200
80 120 160
MGD935
Ts (°C)
Fig.3 Total power dissipation as a function of the
soldering point temperature.
1997 Jul 11 3
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Philips Semiconductors Product specification
UHF power transistor BLV2042
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
Note
1. Transistor with metallized ground plane mounted on a printed-circuit board, see
recommendations in the General part of handbook SC19a”
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
thermal resistance from junction to
P
= 17 W; Tmb=25°C; note 1 10 K/W
tot
mounting base
“Mounting and soldering
.
collector-base breakdown voltage open emitter; IC= 5 mA 60 −−V
collector-emitter breakdown voltage open base; IC=10mA 28 −−V
emitter-base breakdown voltage open collector; IE= 0.5 mA 4 −−V
collector leakage current VCE= 26 V; VBE=0 −−1.3 mA
DC current gain VCE= 26 V; IC= 600 mA 30 − 120
collector capacitance VCB= 26 V; IE=ie= 0; f = 1 MHz − 6 − pF
feedback capacitance VCE= 26 V; IC= 0; f = 1 MHz − 2.5 − pF
120
handbook, halfpage
h
FE
80
40
0
0
(1) VCE= 26V; tp= 500µs; δ =<1%.
(2) VCE=10V.
0.4 0.8 1.61.2
(1)
(2)
Fig.4 DC current gain as a function of collector
current; typical values.
MGD936
IC (A)
50
handbook, halfpage
C
(pF)
40
30
20
10
f = 1 MHz.
C
c
C
0
re
050
10 20 30 40
Fig.5 Capacitance as a function of
collector-emitter voltage; typical values.
MGD947
VCE (V)
1997 Jul 11 4
Page 5
Philips Semiconductors Product specification
UHF power transistor BLV2042
APPLICATION INFORMATION
RF performance at T
=25°C in a common emitter test circuit.
mb
MODE OF OPERATION
f
(MHz)
CW, class-AB 1950 26 15 4
V
(V)
CE
I
CQ
(mA)
P
(W)
L
G
p
(dB)
≥11 ≥40
typ. 13 typ. 45
η
(%)
C
d
im
(dBc)
−
CW, class-AB 1990 26 15 4 ≥11 ≥40 −
2-tone, class-AB f1= 1950; f2= 1950.1 26 15 4 (PEP) typ. 14 typ. 35 typ. −30
Ruggedness in class-AB operation
The BLV2042 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases under the
following conditions: f = 1950 MHz; V
16
handbook, halfpage
G
(dB)
12
p
8
G
p
η
C
= 26 V; ICQ= 15 mA; PL= 4 W; Tmb=25°C.
CE
MGD948
80
η
(%)
60
40
handbook, halfpage
C
P
(W)
6
L
4
MGD949
4
0
01 5
CW, class-AB; VCE= 26 V; ICQ= 15 mA; f = 1950 MHz; Tmb=25°C.
23 4
20
0
PL (W)
Fig.6 Power gain and collector efficiency as
functions of load power; typical values.
2
0
0
CW, class-AB; VCE= 26 V; ICQ= 15 mA; f = 1950 MHz; Tmb=25°C.
0.1 0.2 0.3
PD (W)
Fig.7 Load power as a function of drive power;
typical values.
1997 Jul 11 5
Page 6
Philips Semiconductors Product specification
UHF power transistor BLV2042
16
handbook, halfpage
G
p
(dB)
12
8
4
0
01 5
VCE= 26 V; ICQ= 15 mA; f1= 1950 MHz; f2= 1950.1 MHz.
G
p
η
C
23 4
PL (PEP) (W)
Fig.8 Power gain and collector efficiency as
functions of peak envelope load power;
typical values.
MGD950
80
η
(%)
60
40
20
0
handbook, halfpage
C
6
P
L
(PEP)
(W)
4
2
0
0
VCE= 26 V; ICQ= 15 mA; f1= 1950 MHz; f2= 1950.1 MHz.
0.05 0.1 0.2
MGL163
0.15
PD (PEP) (W)
Fig.9 Peak envelope load power as a function of
peak envelope drive power; typical values.
−20
handbook, halfpage
d
im
(dBc)
−30
−40
−50
0
VCE= 26 V; f1= 1950 MHz; f2= 1950.1 MHz.
(1) ICQ=15mA.
15234
(2) ICQ=40mA. (3) ICQ=60mA.
(3)
(2)
(1)
MGD951
PL (PEP) (W)
Fig.10 Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
−20
handbook, halfpage
d
im
(dBc)
−30
d
3
−40
−50
−60
01 5
VCE= 26 V; ICQ= 15 mA; f1= 1950 MHz; f2= 1950.1 MHz.
d
5
d
7
23 4
MGD952
PL (PEP) (W)
Fig.11 Intermodulation distortion as a function of
peak envelope load power; typical values.
1997 Jul 11 6
Page 7
Philips Semiconductors Product specification
UHF power transistor BLV2042
Test circuit information
+V
handbook, full pagewidth
bias
C5 C3C4
+V
C
L9
R1
C10C11
C9
f = 1950 MHz.
RF-in
C1
L1 L5
L2
C2
L4
L3
DUT
Fig.12 Class-AB test circuit.
L7
L6
C6
C7
RF-out
MGD961
C8
L8
1997 Jul 11 7
Page 8
Philips Semiconductors Product specification
UHF power transistor BLV2042
List of components (see Figs 12 and 13)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
C1, C9 multilayer ceramic chip capacitor; note 1 100 pF
C2, C6 multilayer ceramic chip capacitor; note 2 3 pF
C3, C8 multilayer ceramic chip capacitor; note 2 27 pF
C4, C10 multilayer ceramic chip capacitor 100 nF 2222 581 16641
C5, C11 tantalum SMD capacitor 47 µF; 35 V
C7 multilayer ceramic chip capacitor; note 2 1.2 pF
L1 stripline; note 3 50 Ω length 9.9 mm
width 0.91 mm
L2 stripline; note 3 50 Ω length 6.66 mm
width 0.91 mm
L3 stripline; note 3 10 Ω length 4 mm
width 8 mm
L4 stripline; note 3 31 Ω length 3 mm
width 2 mm
L5 stripline; note 3 31 Ω length 3 mm
width 2 mm
L6 stripline; note 3 8.3 Ω length 17.25 mm
width 10.3 mm
L7 stripline; note 3 50 Ω length 2.42 mm
width 0.91 mm
L8 stripline; note 3 50 Ω length 6.14 mm
width 0.91 mm
L9 grade 4S2 ferroxcube chip-bead 4330 030 36301
R1 metal film resistor 100 Ω; 0.4 W
DUT transistor BLV2042
Notes
1. American Technical Ceramics type 100B or capacitor of the same quality.
2. American Technical Ceramics type 100A or capacitor of the same quality.
3. The striplines are on a double copper-clad printed-circuit board with epoxy fibreglass dielectric (ε
thickness 0.64 mm.
1997 Jul 11 8
= 6.15);
r
Page 9
Philips Semiconductors Product specification
UHF power transistor BLV2042
handbook, full pagewidth
C1
L1 L2
C2
C4
C5
L4 L5
L3
C3
70
41
L7 L8
C6 C7
L9
R1
C9
C8
C11
L6
C10
MGD965
Dimensions in mm.
f = 1950 MHz.
The components are situated on one side of the copper-clad epoxy fibreglass board, the other side is not etched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.13 Component layout for class-AB test circuit.
1997 Jul 11 9
Page 10
Philips Semiconductors Product specification
UHF power transistor BLV2042
1950
MGD953
f (MHz)
handbook, halfpage
8
Z
i
(Ω)
6
4
2
0
1800 1850 1900 2000
VCE= 26 V; ICQ= 15 mA; PL= 4 W; Tmb=25°C.
x
i
r
i
Fig.14 Input impedance as a function of frequency
(series components); typical values.
12
handbook, halfpage
X
Z
L
(Ω)
8
4
0
1800
VCE= 26 V; ICQ= 15 mA; PL= 4 W; Tmb=25°C.
L
R
L
1850 1900 20001950
MGD954
f (MHz)
Fig.15 Load impedance as a function of frequency
(series components); typical values.
16
handbook, halfpage
G
p
(dB)
12
8
4
0
1800 1850 1900 2000
VCE= 26 V; ICQ= 15 mA; PL= 4 W; Tmb=25°C.
1950
f (MHz)
Fig.16 Power gain as a function of frequency;
typical values.
MGD955
handbook, halfpage
Z
i
Z
MBA451
L
Fig.17 Definition of transistor impedance.
MOUNTING RECOMMENDATIONS
Heat from the device is transferred via the leads and the
metallized underside. For optimum heat transfer it is
recommended that the transistor be mounted on a
grounded metallized area on the component side of the
printed-circuit board. This metallized area should contain a
large number of metallized, solder-filled through-holes.
The non-component side of the printed-circuit board forms
a ground plane. When the printed-circuit board is mounted
on the heatsink using heatsink compound, a thermal
resistance from mounting base to heatsink of 0.9 K/W can
be attained.
1997 Jul 11 10
Page 11
Philips Semiconductors Product specification
UHF power transistor BLV2042
PACKAGE OUTLINE
Ceramic surface mounted package; 8 leads SOT409B
D
A
D
2
H
1
85
H
14
e
b
0 2.5 5 mm
B
w
B
2
w
1
scale
c
L
E
2
A
E
α
Q
1
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
mm
OUTLINE
VERSION
SOT409B
A
2.36
2.06
0.093
0.081
0.58
0.43
0.023
0.017
D
2
0.15
5.94
5.03
0.234
0.198
5.16
5.00
0.203
0.197
0.10
0.006
0.004
IEC JEDEC EIAJ
4.93
4.14
4.01
3.99
0.194
0.163
0.158
0.157
REFERENCES
E
2
UNIT cbDE
inches
1.27
0.050
e
HH
7.47
7.26
0.294
0.286
1997 Jul 11 11
1
4.39
4.24
0.173
0.167
LQ
0.84
0.10
0.69
0.00
0.033
0.004
0.027
0.000
1
0.25
0.010
PROJECTION
w
w
1
2
0.25
0.010
EUROPEAN
α
2°
0°
2°
0°
ISSUE DATE
98-01-27
Page 12
Philips Semiconductors Product specification
UHF power transistor BLV2042
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jul 11 12
Page 13
Philips Semiconductors Product specification
UHF power transistor BLV2042
NOTES
1997 Jul 11 13
Page 14
Philips Semiconductors Product specification
UHF power transistor BLV2042
NOTES
1997 Jul 11 14
Page 15
Philips Semiconductors Product specification
UHF power transistor BLV2042
NOTES
1997 Jul 11 15
Page 16
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Printed in The Netherlands 127067/00/02/pp16 Date of release: 1997 Jul 11 Document order number: 9397 750 02546
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