Datasheet BLV20 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV20

VHF power transistor

Product specification

August 1986

Philips Semiconductors Product specification

VHF power transistor BLV20

DESCRIPTION

N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions.

It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.

PINNING - SOT123

PIN DESCRIPTION

1 collector
2 emitter
3 base
4 emitter

QUICK REFERENCE DATA

R.F. performance up to T

= 25 °C in an unneutralized common-emitter

h

class-B circuit

MODE OF

OPERATION

V

CE

VfMHz

P

W

G

L

p

dB

%

η

z

i

Ω

c.w. 28 175 8 > 12 > 65 1,8 + j0,7 18 − j20

PIN CONFIGURATION

lfpage

1

23

4

handbook, halfpage

b

MBB012

MSB057

Fig.1 Simplified outline and symbol.

Y

L

mS

c

e

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of
which is toxic. The device is entirely safe provided that the BeO disc is
not damaged.

August 1986 2

Philips Semiconductors Product specification

VHF power transistor BLV20

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (V

peak value v
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T

BE

=0)

CESM

CEO

EBO
C(AV)
CM

=25°CP

mb

rf

stg

j

max. 65 V
max. 36 V
max. 4 V
max. 0,9 A
max. 2,5 A
max. 20 W

−65 to + 150 °C

max. 200 °C

handbook, halfpage

1

I

C

(A)

0.5

0

10 20 30 40

Th = 70 °C

Fig.2 D.C. SOAR.

Tmb = 25 °C

VCE (V)

MGP272

30

handbook, halfpage

P

tot

(W)

20

10

0

0 50 100

I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch

ΙΙΙ

derate by 0.12 W/K

ΙΙ

0.1 W/K

Ι

MGP273

Th (°C)

Fig.3 R.F. power dissipation; VCE≤ 28 V; f > 1 MHz.

THERMAL RESISTANCE

(dissipation = 8 W; T

= 72,4 °C, i.e. Th=70°C)

mb

From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R

August 1986 3

th j−mb(dc)
th j−mb(rf)
th mb−h

= 10,7 K/W
= 8,6 K/W
= 0,3 K/W

Philips Semiconductors Product specification

VHF power transistor BLV20

CHARACTERISTICS

T

=25°C

j

Collector-emitter breakdown voltage

V

= 0; IC= 2 mA V

BE

(BR)CES

Collector-emitter breakdown voltage

open base; IC= 10 mA V

(BR)CEO

Emitter-base breakdown voltage

open collector; IE= 1 mA V

(BR)EBO

Collector cut-off current

VBE= 0; VCE= 36 V I

CES

Second breakdown energy; L = 25 mH; f = 50 Hz

open base E
R

=10Ω E

BE

D.C. current gain

I

= 0,4 A; VCE= 5 V 10 to 100

C

Collector-emitter saturation voltage

(1)

(1)

IC= 1,25 A; IB= 0,25 A V

Transition frequency at f = 100 MHz

(1)

−IE= 0,4 A; VCB= 28 V f
= 1,25 A; VCB= 28 V f

−I

E

h

T
T

SBO
SBR

FE

CEsat

Collector capacitance at f = 1 MHz

IE=Ie= 0; VCB= 28 V C

c

Feedback capacitance at f = 1 MHz

I

= 50 mA; VCE= 28 V C

C

Collector-flange capacitance C

re
cf

> 65 V

> 36 V

> 4V

< 1mA

> 0,5 mJ
> 0,5 mJ

typ. 50

typ. 0,8 V

typ. 600 MHz
typ. 520 MHz

typ. 10 pF

typ. 7,1 pF
typ. 2 pF

Note

1. Measured under pulse conditions: t

≤ 200 µs; δ≤0,02.

p

August 1986 4

Philips Semiconductors Product specification

VHF power transistor BLV20

100

handbook, halfpage

h

FE

50

0

0 0.5 1.5

VCE = 28 V

5 V

1

IC (A)

Fig.4 Typical values; Tj=25°C.

MGP274

40

handbook, halfpage

C

c

(pF)

30

20

10

0

0 102030

Fig.5 IE=Ie= 0; f = 1 MHz; Tj=25°C.

MGP275

typ

VCB (V)

1000

handbook, full pagewidth

f

T

(MHz)

500

0

0

Fig.6 Typical values; f = 100 MHz; Tj=25°C.

August 1986 5

VCB = 28 V

20 V

10.5

−IE (A)

MGP276

1.5

Philips Semiconductors Product specification

VHF power transistor BLV20

APPLICATION INFORMATION

R. F. performance in c.w. operation (unneutralized common-emitter class-B circuit)
T

=25°C

h

f (MHz) V

(V) PL(W) PS(W) Gp(dB) IC(A) η (%) zi(Ω) YL(mS)

CE

175 28 8 < 0,5 > 12 < 0,44 > 65 1,8 + j0,7 18 − j20

handbook, full pagewidth

50 Ω

C1

C2

L4

T.U.T.

L1

L3

L2

C3

C4

L5

L6

+V

CC

C5

C6

L7

R1

MGP253

50 Ω

C7

Fig.7 Test circuit; c.w. class-B.

List of components:

C1 = C7 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C2 = C6 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
C3 = 27 pF ceramic capacitor (500 V)
C4 = 120 pF ceramic capacitor (500 V)
C5 = 100 nF polyester capacitor
L1 = 1 turn Cu wire (1,6 mm); int. dia. 8,4 mm; leads 2 × 5 mm
L2 = 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm
L3 = L8 = Ferroxcube wide band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4 = L5 = strip (12 mm × 6 mm); tap for C3 at 5 mm from transistor
L6 = 3 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 9,0 mm; leads 2 × 5 mm
L7 = 3 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 8,2 mm; leads 2 × 5 mm
L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
R1 = R2 = 10 Ω carbon resistor
Component layout and printed-circuit board for 175 MHz test circuit see Fig.8.

August 1986 6

Philips Semiconductors Product specification

VHF power transistor BLV20

handbook, full pagewidth

150

C4

L6

C5 R1

+V

72

CC

rivet

L5

L4

L7

C6

C7

MGP254

C1 C2

L3

L1

L2

C3

Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.

The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.

August 1986 7

Philips Semiconductors Product specification

VHF power transistor BLV20

15

handbook, halfpage

P

L

(W)

10

5

0

0 0.5 1

Th = 25 °C

70 °C

PS (W)

Fig.9 Typical values; VCE= 28 V; f = 175 MHz.

MGP277

15

handbook, halfpage

G

p

(dB)

10

5

0

01020

G

p

T

h = 25 °C

70 °C

T

h = 25 °C

η

70 °C

MGP278

PL (W)

Fig.10 Typical values; VCE= 28 V; f = 175 MHz.

100

η

(%)

50

0

handbook, halfpage

P

Lnom

(W)

(VSWR = 1)

The graph shows the permissible output power under nominal
conditions (VSWR = 1) as a function of the expected VSWR during
short-time mismatch conditions with heatsink temperatures as
parameter.

Fig.11 R.F. SOAR; c.w. class-B operation; f = 175 MHz; VCE= 28 V; R

August 1986 8

VSWR

= 0,3 K/W.

MGP279

T

h =

50 °C

70 °C

90 °C

2

11

10

9

8

7

11010

th mb-h

Philips Semiconductors Product specification

VHF power transistor BLV20

12

handbook, halfpage

r

i

(Ω)

10

8

x

6

4

2

0

0 200 400

Typical values; VCE= 28 V;

= 8 W;

P

L

=25°C

T

h

i

r

i

x

i

r

i

f (MHz)

Fig.12 Input impedance (series components).

MGP280

5

(Ω)

0

−5

−10

0

MGP281

−20

−40

−60

0

C

(pF)

L

150

handbook, halfpage

R

L

x

i

(Ω)

100

Typical values; VCE= 28 V;

= 8 W;

P

L

=25°C

T

h

R

L

C

50

L

0

0 200 400

C

f (MHz)

L

R

L

Fig.13 Load impedance (parallel components).

OPERATING NOTE

30

handbook, halfpage

G

p

(dB)

20

10

0

0 200 400

Typical values; VCE= 28 V;

= 8 W;

P

L

=25°C

T

h

Fig.14

f (MHz)

MGP282

Below 100 MHz a base-emitter resistor of 10 Ω is
recommended to avoid oscillation. This resistor must be
effective for r.f. only.

August 1986 9

Philips Semiconductors Product specification

VHF power transistor BLV20

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT123A

D

A

F

H

α

1

H

q

U

1

L

C

B

w

M

C

2

b

43

p

2

0 5 10 mm

scale

A

U

2

w

M

AB

1

c

U

3

Q

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.82

5.56

c

Db

9.73

0.18

9.47

0.10

0.397

0.383

0.007

0.004

IEC JEDEC EIAJ

0.373

0.371

D

9.63

9.42

F

1

2.72

20.71

2.31

19.93

0.815

0.107

0.091

0.221

0.785

0.203

REFERENCES

5.61

5.16

pH

3.33

3.04

0.131

0.120

Q

4.63

4.11

0.182

0.162

q

18.42

0.725

U

25.15

24.38

0.99

0.96

1

U2U

6.61

6.09

0.26

0.24

w

1

3

9.78

9.39

0.385

0.370

EUROPEAN

PROJECTION

UNIT

inches

A

7.47

mm

6.37

0.229

0.294

0.219

0.251

OUTLINE
VERSION

SOT123A 97-06-28

August 1986 10

w

2

1.020.51

0.040.02

ISSUE DATE

αL

45°

Philips Semiconductors Product specification

VHF power transistor BLV20

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

August 1986 11