Datasheet BLV194 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV194

UHF power transistor

Product speciﬁcation

January 1993

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV194

FEATURES

• Emitter-ballasting resistors for an optimum temperature profile

• Gold metallization ensures excellent reliability.

DESCRIPTION

NPN silicon planar epitaxial transistor intended for common emitter class-AB operation in the 900 MHz communications band.

The transistor has a SOT171 flange envelope with a ceramic cap.

All leads are isolated from the mounting base.

PINNING - SOT171

PIN DESCRIPTION

1 emitter 2 emitter 3 base 4 collector 5 emitter 6 emitter

QUICK REFERENCE DATA

RF performance at T

MODE OF

OPERATION

= 25 °C in a common emitter test circuit.

h

f

(MHz)

V

(V)

CE

P

(W)

L

(dB)

G

p

η

C

(%)

CW, class-AB 900 12.5 16 ≥ 7 ≥ 50

lfpage

1

3 5

Top view

2

4 6

MBA931 - 1

handbook, halfpage

b

MBB012

c

e

Fig.1 Simplified outline and symbol.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

January 1993 2

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV194

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CEO

V

CES

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

collector-emitter voltage open base − 16 V collector-emitter voltage base short-circuited − 32 V emitter-base voltage open collector − 3V DC collector current − 3A average collector current − 3A total power dissipation Tmb =25°C − 46 W storage temperature −65 150 °C junction temperature − 200 °C

10

handbook, halfpage

I

C

(A)

1

−1

10

110

(1) Tmb=25°C. (2) Th=70°C.

(1)

(2)

Fig.2 DC SOAR.

VCE (V)

MRC103

60

handbook, halfpage

P

tot

(W)

40

20

2

10

0

02040

(1) Continuous operation. (2) Short-time operation during mismatch.

(2)

(1)

60 80

MRC102

100 120

o

Th (

C)

Fig.3 Power/temperature derating curve.

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS

R

th j-mb

R

th mb-h

thermal resistance from junction to mounting base P thermal resistance from mounting base to heatsink 0.4 K/W

= 46 W; Tmb=25°C 3.8 K/W

dis

January 1993 3

THERMAL

RESISTANCE

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV194

CHARACTERISTICS

T

= 25 °C, unless otherwise speciﬁed.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CEO

V

(BR)CES

V

(BR)EBO

I

CER

h

FE

C

c

C

re

C

c-mb

Note

1. Measured under pulse conditions: t

collector-emitter breakdown voltage IB= 0; IC=40mA 16 −− V collector-emitter breakdown voltage IC= 20 mA; VBE=0 32 −− V emitter-base breakdown voltage IC= 0; IE= 5 mA 3 −− V collector leakage current RBE= 700 Ω; VCE=16V −−1mA DC current gain IC= 1.2 A; VCE= 10 V (note 1) 25 70 − collector capacitance IE=ie= 0; VCB= 12.5 V; f = 1 MHz − 26 − pF feedback capacitance IC= 0; VCB= 12.5 V; f = 1 MHz − 19 − pF collector-mounting base capacitance − 2 − pF

≤ 200 µs; δ≤0.02.

p

100

handbook, halfpage

h

FE

80

60

40

20

0

02

VCE=10V. Measured under pulse conditions: t

δ≤0.02.

≤ 200µs;

p

4

MRC098

I

(A)

C

Fig.4 DC current gain as a function of collector

current, typical values.

60

handbook, halfpage

C

c

(pF)

40

20

6

0

048

IE=ie= 0; f = 1 MHz.

MRC095

12 16

VCB (V)

Fig.5 Collector capacitance as a function of

collector-base voltage, typical values.

January 1993 4

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV194

APPLICATION INFORMATION

RF performance at T R

th j-mb

= 0.4 K/W.

=25°C in a common emitter test circuit.

h

MODE OF

OPERATION

f

(MHz)

V

(V)

CE

I

CQ

(mA)

P

(W)

L

G

(dB)

CW, class-AB 900 12.5 10 16 ≥ 7

typ. 8.5

16

handbook, halfpage

G

p

(dB)

12

8

4

0

04812

G

p

η

MRC096

16 20

P

(W)

L

80

(%) 60

40

20

0

20

handbook, halfpage

P

η

L

(W)

16

12

8

4

0

01

23

P

η

C

(%)

≥ 50

typ. 57

MRC101

4

P

(W)

IN

Class-AB operation: ICQ= 10 mA; VCE= 12.5 V; f = 900 MHz.

Fig.6 Power gain and efficiency as functions of

load power, typical values.

January 1993 5

Class-AB operation: ICQ= 10 mA; VCE= 12.5 V; f = 900 MHz.

Fig.7 Load power as a function of input power,

typical values.

Ruggedness in class-AB operation

The BLV194 is capable of withstanding a load mismatch corresponding to VSWR = 20:1 through all phases at rated output power under the following conditions:

VCE= 15.5 V; Th=25°C; R

= 0.4 K/W; f = 900 MHz.

th j-mb

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV194

handbook, full pagewidth

50 Ω input

f = 900 MHz.

C1

C2

L1 L2 L3

C3

C5C4C7

+V

BB

C6

L4

L5

L6

R1

C20C21

C9

L7

DUT

C10

L9

C8

C18 C19

Fig.8 Class-AB test circuit.

C11

C13

L10

L11 L12

C12

L8

R2

C14

+V

CC

C15

C17

C16

50 Ω output

MEA985

January 1993 6

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV194

List of components (see test circuit)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C8, C17 multilayer ceramic chip capacitor

(note 1) C3, C5, C14, C16 ﬁlm dielectric trimmer 1.4 to 5.5 pF 2222 809 09001 C2, C6, C7 multilayer ceramic chip capacitor

(note 1) C4 multilayer ceramic chip capacitor

(note 1) C13, C15 multilayer ceramic chip capacitor

(note 1) C9, C10 multilayer ceramic chip capacitor

(note 3) C11, C12 multilayer ceramic chip capacitor

(note 1) C18 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C19, C21 electrolytic capacitor 10 µF, 63 V 2222 030 37688 L1, L12 stripline (note 3) 50 Ω length 24 mm

L2, L11 stripline (note 3) 50 Ω length 10 mm

L3 stripline (note 3) 50 Ω length 8 mm

L4, L7 stripline (note 3) 41 Ω length 3 mm

L5, L8 4 turns enamelled 1 mm copper

wire L6, L9 grade 3B Ferroxcube wideband

HF choke L10 stripline (note 3) 50 Ω length 7 mm

R1, R2 0.25 W metal ﬁlm resistor 10 Ω

330 pF

4.3 pF

3.9 pF

4.7 pF

5.6 pF

width 2.4 mm

width 3.2 mm

45 nH int. dia. 4 mm

leads 2 × 5mm

4312 020 36642

width 2.4 mm

Notes

1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.

2. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

3. The striplines are on a double copper-clad printed- circuit board, with PTFE fibre-glass dielectric (ε thickness1⁄32inch.

January 1993 7

= 2.2),

r

Philips Semiconductors Product speciﬁcation

n

UHF power transistor BLV194

dbook, full pagewidth

+V

BB

C21

C20

C2 C4

C1

C3

L6

C8

R1

L10

C11

C12

L8

C13

L11

L5

C6

L1 L2

C7

C5 C14 C16

C9 L4

L3

L7

C10

+V

CC

L9

R2

L12

C19

C18

C15

C17

handbook, full pagewidth

strap

mounting

screws

(8x)

126 mm

rivets

(12x)

MEA984

strap

70 mm

strap

MEA983

The components are mounted on one side of a copper-clad PTFE fibre-glass board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by fixing screws and copper straps under the emitter leads.

Fig.9 Component layout for 900 MHz class-AB test circuit.

January 1993 8

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV194

handbook, halfpage

8

Z

i

(Ω)

6

4

2

0

−2 840 880

Class-AB operation: ICQ= 10 mA; VCE= 12.5 V;

=25°C; PL=16W.

T

h

r

i

x

i

920 960

MRC099

f (MHz)

Fig.10 Input impedance as a function of frequency

(series components), typical values.

handbook, halfpage

3

R

Z

L

(Ω)

2

1

0

840 880

Class-AB operation: ICQ= 10 mA; VCE= 12.5 V;

=25°C; PL=16W.

T

h

L

X

L

920 960

MRC100

f (MHz)

Fig.11 Load impedance as a function of frequency

(series components), typical values.

handbook, halfpage

Z

i

Z

L

Fig.12 Definition of transistor impedance.

MBA451

12

handbook, halfpage

G

p

(dB)

8

4

0

840 880

Class-AB operation: ICQ= 10 mA; VCE= 12.5 V;

=25°C; PL=16W.

T

h

920 960

f (MHz)

Fig.13 Power gain as a function of frequency,

typical values.

MRC097

January 1993 9

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV194

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 6 leads SOT171A

D

A

F

D

1

U

1

q

H

1

b

1

2

H

U

2

Db

9.25

9.04

0.364

0.356

1

D

9.30

8.99

0.366

0.354

1

5.95

5.74

0.234

0.226

A

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

6.81

6.07

0.268

0.239

2.15

1.85

0.085

0.073

b

1

3.20

2.89

0.126

0.114

c

0.16

0.07

0.006

0.003

6

345

b

e

0 5 10 mm

E

1

6.00

5.70

0.236

0.224

e

3.58

0.140

C

w

M

C

2

p

w

M

3

scale

F

H

11.31

3.05

10.54

2.54

0.445

0.120

0.415

0.100

B

w

H

1

9.27

9.01

0.365

0.355

c

E

1

M

AB

1

Q

qw

18.42

U

24.90

24.63

0.980

0.970

1

0.236

0.224

p

3.43

3.17

0.135

0.125

Q

4.32

4.11

0.170

0.162

E

w

U

6.00

5.70

2

1

w

3

0.260.51 1.02

0.010.02 0.040.725

OUTLINE

VERSION

SOT171A 97-06-28

IEC JEDEC EIAJ

REFERENCES

EUROPEAN

PROJECTION

January 1993 10

ISSUE DATE

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV194

DEFINITIONS

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

January 1993 11