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BLV193
Datasheet (Philips)
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Datasheet BLV193 Datasheet (Philips)

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Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLV193
UHF power transistor
Product specification
March 1993
Page 2
Philips Semiconductors Product specification

FEATURES

• Emitter ballasting resistors for an optimum temperature profile
• Gold metallization ensures excellent reliability.

DESCRIPTION

NPN silicon planar epitaxial transistor intended for common emitter class-A and class-AB operation in the 900 MHz communications band.
The transistor has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base.

PINNING - SOT171

PIN DESCRIPTION
1 emitter 2 emitter 3 base 4 collector 5 emitter 6 emitter

QUICK REFERENCE DATA

RF performance at T
MODE OF
OPERATIONf(MHz)
= 25 °C in a common emitter test circuit.
h
V
(V)
CE
P
(W)
L
G
p
(dB)
η
(%)
C
d
(dB)
(note 1)
c.w. class-AB 900 12.5 12 ≥ 6.5 ≥ 50 − c.w. class-A 900 12 6 (PEP) typ. 11 − typ. −30
Note
1. 2-tone measurement, f
= 900 MHz, fq= 901 MHz.
p

PIN CONFIGURATION

alfpage
1
3 5
Top view
2
4 6
MBA931 - 1
handbook, halfpage
b
MBB012
c
e
Fig.1 Simplified outline and symbol.
im
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
March 1993 2
WARNING
Page 3
Philips Semiconductors Product specification

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 36 V collector-emitter voltage open base − 16 V emitter-base voltage open collector − 3V collector current DC or average value − 3.5 A total power dissipation up to Tmb=25°C − 44 W storage temperature range −65 150 °C junction temperature − 200 °C
10
handbook, halfpage
I
C
(A)
Th = 70 oC
1
−1
10
110
Fig.2 DC SOAR.

THERMAL RESISTANCE

Tmb = 25 oC
V
(V)
CE
MRA552
o
T
(
h
MRA553
C)
60
handbook, halfpage
P
tot
(W)
(2)
40
(1)
20
0
2
10
02040
(1) Continuous operation. (2) Short time operation during mismatch.
60 80 100 120
Fig.3 Power derating curves.
SYMBOL PARAMETER CONDITIONS
R
th j-mb
R
th mb-h
from junction to mounting base P from mounting base to heatsink 0.4 K/W
= 44 W; Tmb=25°C 4.0 K/W
dis
March 1993 3
THERMAL
RESISTANCE
Page 4
Philips Semiconductors Product specification

CHARACTERISTICS

T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
C
c-mb
collector-base breakdown voltage open emitter;
Ic=20mA
collector-emitter breakdown voltage open base;
Ic=40mA
emitter-base breakdown voltage open collector;
IE= 0.5 mA
collector-emitter leakage current VCE=16V;
VBE=0
DC current gain VCE=10V;
Ic= 1.2 A; note 1
collector capacitance VCB= 12.5 V;
IE=Ie=0; f = 1 MHz
feedback capacitance VCE= 12.5 V;
Ic=0; f = 1 MHz
collector-mounting base capacitance − 2 − pF
36 −− V
16 −− V
3 −− V
−−1mA
25 60 −
− 24.5 − pF
− 13 − pF
Note
1. Measured under pulse conditions: t
≤ 200 µs; δ≤0.02.
p
March 1993 4
Page 5
Philips Semiconductors Product specification
100
handbook, halfpage
h
FE
80
60
40
20
0
02
Measured under pulse conditions: tp≤ 200µs; δ≤0.02.
VCE = 12.5 V
10 V
4
MRA559
IC (A)
Fig.4 DC current gain as a function of collector
current, typical values.
50
handbook, halfpage
C
c
(pF)
40
30
20
10
0
6
048
IE=ie= 0; f = 1 MHz.
MRA546
12 16
V
(V)
CB
Fig.5 Collector capacitance as a function of
collector-base voltage, typical values.
40
handbook, halfpage
C
re
(pF)
30
20
10
0
048
f = 1 MHz.
MRA554
12 16
VCE (V)
Fig.6 Feedback capacitance as a function of
collector-emitter voltage, typical values.
March 1993 5
Page 6
Philips Semiconductors Product specification

APPLICATION INFORMATION

RF performance at T
MODE OF OPERATION
c.w. class-AB 900 12.5 0.01 12 ≥ 6.5
c.w. class-A 900 12 1.3 6 (PEP) typ. 11 − typ. −30
Note
1. 2-tone measurement, f
=25°C in a common emitter test circuit; R
h
f
(MHz)
= 900 MHz, fq= 901 MHz.
p
V
CE
(V)
I (A)
CQ
th j-mb
= 0.4 K/W.
P
L
(W)
typ. 7.5
G
P
(dB)
η
(%)
> 50 typ. 60
d
c
im
(dB)
(note 1)
−
10
handbook, halfpage
G
p
(dB)
8
6
4
2
0
048
Class-AB operation; VCE= 12.5 V; f = 900 MHz;
=10mA.
I
CQ
G
p
η
C
MRA555
12
PL (W)
Fig.7 Gain and efficiency as functions of load
power, typical values.
3
P
(W)
D
MRA551
4
100
η
C
(%)
80
60
40
20
0
16
16
handbook, halfpage
P
L
(W)
12
8
4
0
012
Class-AB operation; VCE= 12.5 V; f = 900 MHz;
=10mA.
I
CQ
Fig.8 Load power as a function of drive power,
typical values.
March 1993 6

Ruggedness in class-AB operation

The BLV193 is capable of withstanding a load mismatch corresponding to VSWR = 10:1 through all phases under the following conditions:
VCE= 15.5 V, f = 900 MHz, Th=25°C, R
= 0.4 K/W, and
th j-mb
rated output power.
Page 7
Philips Semiconductors Product specification
16
handbook, halfpage
G
p
(dB)
12
8
4
0
048
Class-A operation; VCE= 12 V; IC= 1.3 A;
= 900 MHz; fq= 901 MHz.
f
p
MRA558
P
(W)
L(PEP)
Fig.9 Gain as a function of load power (PEP),
typical values.
12
handbook, halfpage
P
L(PEP)
(W)
10
8
6
4
2
0
12
0 0.2 0.4 0.6
Class-A operation; VCE= 12 V; IC= 1.3 A;
= 900 MHz; fq= 901 MHz.
f
p
MRA550
0.8 1
P
D(PEP)
(W)
Fig.10 Load power (PEP) as a function of drive
power (PEP), typical values.
handbook, halfpage
0
d3, d
5
(dB)
−10
−20
−30
−40
−50
−60
−70
04
Class-A operation; VCE= 12 V; IC= 1.3 A;
= 900 MHz; fq= 901 MHz.
f
p
d
3
d
5
812
MRA560
P
(W)
L(PEP)
Fig.11 Intermodulation products as a function of
load power (PEP), typical values.
March 1993 7
Page 8
Philips Semiconductors Product specification
handbook, full pagewidth
50 Ω
C1
C6
L6
L5
L4
C7
L9
C13
L1 L2
C2 C3 C4
C16
V
bias
C5
L3
L8
R1 L10
DUT
Fig.12 Class-A and class-AB test circuit at f = 900 MHz.
C8
L7
C9 C10 C11
L11
R2
C12
C14 C15
MBC797
+V
50 Ω
CC
March 1993 8
Page 9
Philips Semiconductors Product specification

List of components (see test circuit)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C12 multilayer ceramic chip capacitor
(note 1) C2, C3, C10, C11 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09001 C4, C5 multilayer ceramic chip capacitor
(note 1) C6, C7 multilayer ceramic chip capacitor
(note 1) C8, C9 multilayer ceramic chip capacitor
(note 1) C13 multilayer ceramic chip capacitor
(note 1) C14 electrolytic capacitor 6.8 µF, 63 V C15 multilayer ceramic chip capacitor
(note 1) C16 multilayer ceramic chip capacitor 100 nF 2222 852 47104 L1, L7 stripline (note 2) 50 Ω length 29 mm;
L2 stripline (note 2) 50 Ω length 6 mm;
L3 stripline (note 2) 42.7 Ω length 13.1 mm;
L4 stripline (note 2) 42.7 Ω length 4.4 mm;
L5 stripline (note 2) 42.7 Ω length 4.6 mm;
L6 stripline (note 2) 50 Ω length 7 mm;
L8 4 turns closely wound enamelled
0.4 mm copper wire
L9 4 turns enamelled 1 mm copper
wire L10, L11 grade 3B Ferroxcube wideband HF
choke R1, R2 metal film resistor 10 Ω, 0.25 W
33 pF
4.7 pF
5.6 pF
3.3 pF
10 pF
330 pF
width 2.4 mm
width 2.4 mm
width 3 mm
width 3 mm
width 3 mm
width 2.4 mm
60 nH int. dia 3 mm;
leads 2 × 5mm
45 nH int. dia. 4 mm;
leads 2 × 5mm
4312 020 36642
Notes
1. American Technical Ceramics type 100A or capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε thickness1⁄32inch.
March 1993 9
= 2.2),
r
Page 10
Philips Semiconductors Product specification
handbook, full pagewidth
handbook, full pagewidth
124 mm
80 mm
MBC798
V
bias
V
CC
L10
C13
C16 R1
C1
The components are mounted on one side of a copper clad PTFE fibre-glass board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by fixing screws and copper straps under the emitter leads.
L1
C2
C5 L2
C4
L8
L3
C6
L4
L5
C7
R2
L9
C8
L6
C9
C10C3
C15
L7
Fig.13 Printed circuit board and component layout for 900 MHz test circuit.
C14L11
C12
C11
MBC799
March 1993 10
Page 11
Philips Semiconductors Product specification
handbook, halfpage
5
Z
i
(Ω)
4
x
i
3
2
1
0
840 880
Class-AB operation; VCE= 12.5 V; ICQ=10mA;
= 12 W; Th=25°C.
P
L
r
i
920 960
MRA561
f (MHz)
Fig.14 Input impedance (series components) as a
function of frequency, typical values.
handbook, halfpage
5
Z
L
(Ω)
4
R
L
3
X
2
1
0
840 880
Class-AB operation; VCE= 12.5 V; ICQ=10mA;
= 12 W; Th=25°C.
P
L
L
920 960
MRA548
f (MHz)
Fig.15 Load impedance (series components) as a
function of frequency, typical values.
handbook, halfpage
Z
i
Z
MBA451
L
Fig.16 Definition of transistor impedance.
March 1993 11
10
handbook, halfpage
G
p
(dB)
8
6
4
2
0
840 880
Class-AB operation; VCE= 12.5 V; ICQ=10mA;
= 12 W; Th=25°C.
P
L
920 960
f (MHz)
Fig.17 Power gain as a function of frequency,
typical values.
MRA556
Page 12
Philips Semiconductors Product specification
x
i
r
i
f (MHz)
MRA547
handbook, halfpage
5
Z
i
(Ω)
4
3
2
1
0
840 880
Class-A operation; VCE= 12 V; IC= 1.3 A;
=25°C.
T
h
920 960
Fig.18 Input impedance (series components) as a
function of frequency, typical values.
handbook, halfpage
5
Z
L
(Ω)
4
3
2
1
0
840 880
Class-A operation; VCE= 12 V; IC= 1.3 A;
=25°C.
T
h
R
L
X
L
920 960
MRA549
f (MHz)
Fig.19 Load impedance (series components) as a
function of frequency, typical values.
handbook, halfpage
Z
i
Z
L
Fig.20 Definition of transistor impedance.
MBA451
14
handbook, halfpage
G
p
(dB)
12
8
4
0
840 880 920
Class-A operation; VCE= 12 V; IC= 1.3 A;
=25°C.
T
h
f (MHz)
Fig.21 Power gain as a function of frequency,
typical values.
MRA557
960
March 1993 12
Page 13
Philips Semiconductors Product specification

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 6 leads SOT171A

D
A
F
D
1
U
1
q
H
1
b
1
2
H
U
2
Db
9.25
9.04
0.364
0.356
1
D
1
9.30
8.99
0.366
0.354
5.95
5.74
0.234
0.226
A
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
inches
A
6.81
6.07
0.268
0.239
2.15
1.85
0.085
0.073
b
1
3.20
2.89
0.126
0.114
c
0.16
0.07
0.006
0.003
6
345
b
e
0 5 10 mm
E
E
1
6.00
5.70
0.236
0.224
e
3.58
0.140
C
w
M
C
2
p
w
M
3
scale
F
H
11.31
3.05
10.54
2.54
0.445
0.120
0.415
0.100
w
H
9.27
9.01
0.365
0.355
B
1
c
E
1
M
AB
1
Q
qw
18.42
U
1
24.90
24.63
0.980
0.970
6.00
5.70
0.236
0.224
p
3.43
3.17
0.135
0.125
Q
4.32
4.11
0.170
0.162
E
w
U
2
2
1
w
3
0.260.51 1.02
0.010.02 0.040.725
OUTLINE
VERSION
SOT171A 97-06-28
IEC JEDEC EIAJ
REFERENCES
EUROPEAN
PROJECTION
March 1993 13
ISSUE DATE
Page 14
Philips Semiconductors Product specification

DEFINITIONS

Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
March 1993 14
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