Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
March 19932
WARNING
Page 3
Philips SemiconductorsProduct specification
UHF power transistorBLV193
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltageopen emitter−36V
collector-emitter voltageopen base−16V
emitter-base voltageopen collector−3V
collector currentDC or average value−3.5A
total power dissipationup to Tmb=25°C−44W
storage temperature range−65150°C
junction temperature−200°C
10
handbook, halfpage
I
C
(A)
Th = 70 oC
1
−1
10
110
Fig.2 DC SOAR.
THERMAL RESISTANCE
Tmb = 25 oC
V
(V)
CE
MRA552
o
T
(
h
MRA553
C)
60
handbook, halfpage
P
tot
(W)
(2)
40
(1)
20
0
2
10
02040
(1) Continuous operation.
(2) Short time operation during mismatch.
6080100120
Fig.3 Power derating curves.
SYMBOLPARAMETERCONDITIONS
R
th j-mb
R
th mb-h
from junction to mounting baseP
from mounting base to heatsink0.4 K/W
= 44 W; Tmb=25°C4.0 K/W
dis
March 19933
THERMAL
RESISTANCE
Page 4
Philips SemiconductorsProduct specification
UHF power transistorBLV193
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
C
c-mb
collector-base breakdown voltageopen emitter;
Ic=20mA
collector-emitter breakdown voltageopen base;
Ic=40mA
emitter-base breakdown voltageopen collector;
IE= 0.5 mA
collector-emitter leakage currentVCE=16V;
VBE=0
DC current gainVCE=10V;
Ic= 1.2 A;
note 1
collector capacitanceVCB= 12.5 V;
IE=Ie=0;
f = 1 MHz
feedback capacitanceVCE= 12.5 V;
Ic=0;
f = 1 MHz
collector-mounting base capacitance−2−pF
36−− V
16−− V
3−− V
−−1mA
2560−
−24.5−pF
−13−pF
Note
1. Measured under pulse conditions: t
≤ 200 µs; δ≤0.02.
p
March 19934
Page 5
Philips SemiconductorsProduct specification
UHF power transistorBLV193
100
handbook, halfpage
h
FE
80
60
40
20
0
02
Measured under pulse conditions: tp≤ 200µs; δ≤0.02.
VCE = 12.5 V
10 V
4
MRA559
IC (A)
Fig.4DC current gain as a function of collector
current, typical values.
50
handbook, halfpage
C
c
(pF)
40
30
20
10
0
6
048
IE=ie= 0; f = 1 MHz.
MRA546
1216
V
(V)
CB
Fig.5Collector capacitance as a function of
collector-base voltage, typical values.
40
handbook, halfpage
C
re
(pF)
30
20
10
0
048
f = 1 MHz.
MRA554
1216
VCE (V)
Fig.6Feedback capacitance as a function of
collector-emitter voltage, typical values.
March 19935
Page 6
Philips SemiconductorsProduct specification
UHF power transistorBLV193
APPLICATION INFORMATION
RF performance at T
MODE OF OPERATION
c.w. class-AB90012.50.0112≥ 6.5
c.w. class-A900121.36 (PEP)typ. 11−typ. −30
Note
1. 2-tone measurement, f
=25°C in a common emitter test circuit; R
h
f
(MHz)
= 900 MHz, fq= 901 MHz.
p
V
CE
(V)
I
(A)
CQ
th j-mb
= 0.4 K/W.
P
L
(W)
typ. 7.5
G
P
(dB)
η
(%)
> 50
typ. 60
d
c
im
(dB)
(note 1)
−
10
handbook, halfpage
G
p
(dB)
8
6
4
2
0
048
Class-AB operation; VCE= 12.5 V; f = 900 MHz;
=10mA.
I
CQ
G
p
η
C
MRA555
12
PL (W)
Fig.7Gain and efficiency as functions of load
power, typical values.
3
P
(W)
D
MRA551
4
100
η
C
(%)
80
60
40
20
0
16
16
handbook, halfpage
P
L
(W)
12
8
4
0
012
Class-AB operation; VCE= 12.5 V; f = 900 MHz;
=10mA.
I
CQ
Fig.8Load power as a function of drive power,
typical values.
March 19936
Ruggedness in class-AB operation
The BLV193 is capable of withstanding a load mismatch
corresponding to VSWR = 10:1 through all phases under
the following conditions:
VCE= 15.5 V, f = 900 MHz,
Th=25°C, R
= 0.4 K/W, and
th j-mb
rated output power.
Page 7
Philips SemiconductorsProduct specification
UHF power transistorBLV193
16
handbook, halfpage
G
p
(dB)
12
8
4
0
048
Class-A operation; VCE= 12 V; IC= 1.3 A;
= 900 MHz; fq= 901 MHz.
f
p
MRA558
P
(W)
L(PEP)
Fig.9Gain as a function of load power (PEP),
typical values.
12
handbook, halfpage
P
L(PEP)
(W)
10
8
6
4
2
0
12
00.20.40.6
Class-A operation; VCE= 12 V; IC= 1.3 A;
= 900 MHz; fq= 901 MHz.
f
p
MRA550
0.81
P
D(PEP)
(W)
Fig.10 Load power (PEP) as a function of drive
power (PEP), typical values.
handbook, halfpage
0
d3, d
5
(dB)
−10
−20
−30
−40
−50
−60
−70
04
Class-A operation; VCE= 12 V; IC= 1.3 A;
= 900 MHz; fq= 901 MHz.
f
p
d
3
d
5
812
MRA560
P
(W)
L(PEP)
Fig.11 Intermodulation products as a function of
load power (PEP), typical values.
March 19937
Page 8
Philips SemiconductorsProduct specification
UHF power transistorBLV193
handbook, full pagewidth
50 Ω
C1
C6
L6
L5
L4
C7
L9
C13
L1L2
C2C3C4
C16
V
bias
C5
L3
L8
R1L10
DUT
Fig.12 Class-A and class-AB test circuit at f = 900 MHz.
1. American Technical Ceramics type 100A or capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε
thickness1⁄32inch.
March 19939
= 2.2),
r
Page 10
Philips SemiconductorsProduct specification
UHF power transistorBLV193
handbook, full pagewidth
handbook, full pagewidth
124 mm
80 mm
MBC798
V
bias
V
CC
L10
C13
C16R1
C1
The components are mounted on one side of a copper clad PTFE fibre-glass board; the other side is unetched
and serves as a ground plane. Earth connections from the component side to the ground plane are made by
fixing screws and copper straps under the emitter leads.
L1
C2
C5
L2
C4
L8
L3
C6
L4
L5
C7
R2
L9
C8
L6
C9
C10C3
C15
L7
Fig.13 Printed circuit board and component layout for 900 MHz test circuit.
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
inches
A
6.81
6.07
0.268
0.239
2.15
1.85
0.085
0.073
b
1
3.20
2.89
0.126
0.114
c
0.16
0.07
0.006
0.003
6
345
b
e
0510 mm
E
E
1
6.00
5.70
0.236
0.224
e
3.58
0.140
C
w
M
C
2
p
w
M
3
scale
F
H
11.31
3.05
10.54
2.54
0.445
0.120
0.415
0.100
w
H
9.27
9.01
0.365
0.355
B
1
c
E
1
M
AB
1
Q
qw
18.42
U
1
24.90
24.63
0.980
0.970
6.00
5.70
0.236
0.224
p
3.43
3.17
0.135
0.125
Q
4.32
4.11
0.170
0.162
E
w
U
2
2
1
w
3
0.260.51 1.02
0.010.02 0.040.725
OUTLINE
VERSION
SOT171A97-06-28
IEC JEDEC EIAJ
REFERENCES
EUROPEAN
PROJECTION
March 199313
ISSUE DATE
Page 14
Philips SemiconductorsProduct specification
UHF power transistorBLV193
DEFINITIONS
Data Sheet Status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
March 199314
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