Datasheet BLV12 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV12

VHF power transistor

Product specification

September 1991

Philips Semiconductors Product specification

VHF power transistor BLV12

FEATURES

• Emitter-ballasting resistors for an
optimum temperature profile

• Excellent reliability

• Withstands full load mismatch.

DESCRIPTION

NPN silicon planar epitaxial transistor
encapsulated in a 4-lead SOT123
flange envelope with a ceramic cap. It
is designed for common emitter,
class-B operation in mobile VHF
transmitters with a supply voltage of

12.5 V. All leads are isolated from the

mounting flange.

PINNING - SOT123

PIN DESCRIPTION

1 collector
2 emitter
3 base
4 emitter

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

= 25 °C in a common emitter test circuit.

mb

f

(MHz)

V

(V)

CE

P

(W)

L

G

P

(dB)

(%)

c.w. class-B 175 12.5 30 > 9 > 60

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

PIN CONFIGURATION

lfpage

1

4

c

handbook, halfpage

b

η

C

23

MSB057

Fig.1 Simplified outline and symbol.

MBB012

e

September 1991 2

Philips Semiconductors Product specification

VHF power transistor BLV12

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C,IC(AV)

I

CM

P

tot

T

stg

T

j

collector-base voltage open emitter − 36 V
collector-emitter voltage open base − 16 V
emitter-base voltage open collector − 3V
collector current DC or average value − 6A
collector current peak value

− 18 A

f > 1 MHz

total power dissipation RF operation;

− 100 W
f > 1 MHz;
Tmb=25°C

storage temperature range −65 150 °C
junction operating temperature − 200 °C

120

handbook, halfpage

P

tot

(W)

100

80

60

40

20

0

0 20406080100120

(I) Continuous DC operation.
(II) Short time operation during mismatch

(f > 1 MHz)

II

I

Fig.2 Power/temperature derating curve.

MRA372

o

T ( C)

h

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb(RF)

from junction to mounting base P

= 100 W;

tot

1.75 K/W

Tmb=25°C

R

th mb-h

from mounting base to heatsink 0.3 K/W

September 1991 3

Philips Semiconductors Product specification

VHF power transistor BLV12

CHARACTERISTICS

T

= 25 °C.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CES

h

FE

f

T

C

c

C

re

C

c-f

collector-base breakdown voltage open emitter;

Ic= 10 mA

collector-emitter breakdown voltage open base;

Ic= 25 mA

emitter-base breakdown voltage open collector;

IE= 2 mA

collector-emitter leakage current VBE=0;

VCE= 16 V

DC current gain VCE=5 V;

IC=4 A

transition frequency VCE= 12.5 V;

IE= 4 A;
f = 500 MHz

collector capacitance VCB= 12.5 V;

IE=Ie=0;
f = 1 MHz

feedback capacitance VCE= 12.5 V;

IC=0;
f = 1 MHz

collector-flange capacitance f = 1 MHz − 2 − pF

36 −−V

16 −−V

3 −− V

−−10 mA

25 35 −

− 1.6 − GHz

− 90 100 pF

− 60 70 pF

VCE=

12.5 V

I (A)

C

MRA378

50

handbook, halfpage

h

FE

40

30

20

10

0

0 4 8 12 16

V = 5 V

CE

Fig.3 DC current gain as a function of collector

current, typical values.

September 1991 4

250

handbook, halfpage

C

c

(pF)

200

150

100

50

0

0 4 8 12 16

IE=ie= 0; f = 1 MHz.

V (V)

Fig.4 Collector capacitance as a function of

collector-base voltage, typical values.

MRA374.1

CB

Philips Semiconductors Product specification

VHF power transistor BLV12

handbook, halfpage

2

f

T

(GHz)

1.5

1

0.5

0

0246810

VCB= 12.5 V.

MRA375

I (A)

E

Fig.5 Transition frequency as a function of emitter

current, typical values.

September 1991 5

Philips Semiconductors Product specification

VHF power transistor BLV12

APPLICATION INFORMATION

RF performance at T

=25°C in a common emitter test circuit.

mb

MODE OF OPERATION

f

(MHz)

V

(V)

CE

P

(W)

L

c.w. class-B 175 12.5 30 > 9

typ. 9.8

handbook, halfpage

G

P

(dB)

12

8

4

0

10 20 30 40

η

G

P

P (W)

L

MRA367

η

(%)

70

50

30

10

50

handbook, halfpage

P

L

(W)

40

30

20

10

0

02468

G

P

(dB)

> 60
typ. 66

MRA371

P (W)

IN

η

(%)

C

Class-B operation; VCE= 12.5 V; f = 175 MHz.

Fig.6 Gain and efficiency as functions of load

power, typical values.

Class-B operation; VCE= 12.5 V; f = 175 MHz.

Fig.7 Load power as a function of drive power,

typical values.

Ruggedness in class-B operation

The BLV12 is capable of withstanding a full load mismatch
corresponding to VSWR = 50:1 through all phases at rated
output power, up to a supply voltage of 15.5 V, and
f = 175 MHz.

September 1991 6

Philips Semiconductors Product specification

VHF power transistor BLV12

handbook, full pagewidth

50 Ω

C1

C2

C3a

L1

L2

T.U.T.

L4

C3b

L5

L6

C4

C6a

L7

C5

C7

50 Ω

C8C6b

R2

R1

L3

+V

CC

L8

MGP247

Fig.8 Class-B test circuit at f = 175 MHz.

List of components (see test circuit)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1 film dielectric trimmer 2.5 to 20 pF 2222 809 07004
C2, C8 film dielectric trimmer 4 to 40 pF 2222 809 07008
C3a, C3b 500 V ceramic capacitor 47 pF
C4 500 V ceramic capacitor 120 pF
C5 polyester capacitor 100 nF
C6a, C6b 500 V ceramic capacitor 8.2 pF
C7 film dielectric trimmer 5 to 60 pF 2222 809 07011
L1 1 turn enamelled 1.6 mm copper wire int. dia. 9 mm;

leads 2 × 5 mm

L2 7 turns closely wound enamelled 0.5 mm

copper wire

100 nH int. dia. 3 mm;

leads 2 × 5 mm
L3, L8 grade 3B Ferroxcube wideband HF choke 4312 020 36640
L4, L5 stripline (note 1) 12 mm × 6 mm;

note 2
L6 2 turns enamelled 1.6 mm copper wire int. dia. 5 mm;

length 6 mm;

leads 2 × 5 mm
L7 2 turns enamelled 1.6 mm copper wire int. dia. 4.5 mm;

length 6 mm;

leads 2 × 5 mm
R1 0.25 W carbon resistor 10 Ω,5%
R2 0.25 W carbon resistor 4.7 Ω,5%

Notes

1. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric, thickness

2. Taps for capacitors C3a and C3b are situated 5 mm from the transistor.

September 1991 7

1

⁄16inch.

Philips Semiconductors Product specification

VHF power transistor BLV12

handbook, full pagewidth

150

72

L3

R1

C4

L8

C5 R2

+V

CC

C3a

L2

C1 C2

The circuit and components are situated on one side of an epoxy fibre-glass board; the other side is unetched
and serves as a ground plane. Earth connections are made by means of hollow rivets and copper straps under
the emitters, to provide a direct contact between the component side and the ground plane.

L1

L4

C3b

rivet

L6

L5

C6a

C7

L7

C6b

Fig.9 Component layout for 175 MHz class-B test circuit.

September 1991 8

C8

MGP245

Philips Semiconductors Product specification

VHF power transistor BLV12

handbook, halfpage

3

Z

i

(Ω)

2

1

0

100 150 200 250

Class-B operation; VCE= 12.5 V; PL= 30 W.

r

i

x

i

MRA369

f (MHz)

Fig.10 Input impedance (series components) as a

function of frequency, typical values.

handbook, halfpage

4

Z

L

(Ω)

3

2

1

0

-1

-2
100 150 200 250

Class-B operation; VCE= 12.5 V; PL= 30 W.

R

L

X

L

MRA370

f (MHz)

Fig.11 Load impedance (series components) as a

function of frequency, typical values.

handbook, halfpage

Z

i

Z

L

Fig.12 Definition of transistor impedance.

MBA451

handbook, halfpage

G

P

(dB)

15

10

5

0

100 150 200 250

Class-B operation; VCE= 12.5 V; PL= 30 W.

MRA368

f (MHz)

Fig.13 Power gain as a function of frequency, typical

values.

September 1991 9

Philips Semiconductors Product specification

VHF power transistor BLV12

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT123A

D

A

F

H

α

1

H

q

U

1

L

C

B

w

M

C

2

b

43

p

2

0 5 10 mm

scale

A

U

2

w

M

AB

1

c

U

3

Q

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.82

5.56

c

Db

9.73

0.18

9.47

0.10

0.397

0.383

0.007

0.004

IEC JEDEC EIAJ

0.373

0.371

D

9.63

9.42

F

1

2.72

20.71

2.31

19.93

0.815

0.107

0.091

0.221

0.785

0.203

REFERENCES

5.61

5.16

pH

3.33

3.04

0.131

0.120

Q

4.63

4.11

0.182

0.162

q

18.42

0.725

U

1

25.15

24.38

0.99

0.96

U2U

6.61

6.09

0.26

0.24

w

1

3

9.78

9.39

0.385

0.370

EUROPEAN

PROJECTION

UNIT

inches

A

7.47

mm

6.37

0.229

0.294

0.219

0.251

OUTLINE

VERSION

SOT123A 97-06-28

September 1991 10

w

2

1.020.51

0.040.02

ISSUE DATE

αL

45°

Philips Semiconductors Product specification

VHF power transistor BLV12

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

September 1991 11