Datasheet BLV11 Datasheet (Philips)

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DISCRETE SEMICONDUCTORS

DATA SH EET

BLV11

VHF power transistor

Product speciﬁcation

August 1986

Page 2

Philips Semiconductors Product speciﬁcation

VHF power transistor BLV11

DESCRIPTION

N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V.

QUICK REFERENCE DATA

R.F. performance up to T

= 25 °C in an unneutralized common-emitter class-B circuit

MODE OF OPERATION V

c.w. 13,5 175 15 > 8,0 > 60 2,3 + j2,2 130 − j4,4

c.w. 12,5 175 15 typ. 7,5 typ. 67 −−

PIN CONFIGURATION

handbook, halfpage

It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.

MHz

G dB

Ω

PINNING

PIN DESCRIPTION

1 collector 2 emitter 3 base 4 emitter

MSB057

Fig.1 Simplified outline, SOT123.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

August 1986 2

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Philips Semiconductors Product speciﬁcation

VHF power transistor BLV11

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (V

peak value v Collector-emitter voltage (open base) V Emitter-base voltage (open collector) V Collector current (average) I Collector current (peak value); f > 1 MHz I R.F. power dissipation (f > 1 MHz); T Storage temperature T Operating junction temperature T

=0)

CESM

CEO

EBO C(AV) CM

=25°CPrfmax. 36 W

stg

max. 36 V max. 18 V max. 4 V max. 3 A max. 8 A

−65 to + 150 °C

max. 200 °C

3.5

handbook, halfpage

(A)

2.5

1.5

0.5 01020

Th = 70 °C

Tmb = 25 °C

VCE (V)

MGP261

handbook, halfpage

Fig.2 D.C. SOAR.

THERMAL RESISTANCE

(dissipation = 15 W; T

= 74,5 °C, i.e. Th=70°C)

From junction to mounting base (d.c. dissipation) R From junction to mounting base (r.f. dissipation) R From mounting base to heatsink R

(W)

I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch

ΙΙΙ

ΙΙ

derate by 0.2 W/K

0.16 W/K

0 50 100

Th (°C)

MGP262

Fig.3 R.F. power dissipation; VCE≤ 16,5 V; f > 1 MHz.

th j−mb(dc) th j−mb(rf) th mb−h

= 6,55 K/W = 4,95 K/W = 0,3 K/W

August 1986 3

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Philips Semiconductors Product speciﬁcation

VHF power transistor BLV11

CHARACTERISTICS

=25°C

Collector-emitter breakdown voltage

= 0; IC= 10 mA V

Collector-emitter breakdown voltage

open base; IC= 50 mA V

Emitter-base breakdown voltage

open collector; IE= 4 mA V

Collector cut-off current

VBE= 0; VCE= 18 V I

Second breakdown energy; L = 25 mH; f = 50 Hz

open base E R

=10Ω E

D.C. current gain

= 1,5 A; VCE= 5 V h

Collector-emitter saturation voltage

(1)

IC= 4,5 A; IB= 0,9 A V

Transition frequency at f = 100 MHz

(1)

−IE= 1,5 A; VCB= 13,5 V f

−I

= 4,5 A; VCB= 13,5 V f

Collector capacitance at f = 1 MHz

= 0; VCB= 13,5 V C

E=Ie

Feedback capacitance at f = 1 MHz

IC= 200 mA; VCE= 13,5 V C

Collector-ﬂange capacitance C

(BR)CES

(BR)CEO

(BR)EBO

CES

SBO SBR

CEsat

T T

re cf

> 36 V

> 18 V

> 4V

< 4mA

> 2,5 mJ > 2,5 mJ

typ. 40

10 to 100

typ. 1,0 V

typ. 850 MHz typ. 800 MHz

typ. 32 pF

typ. 23 pF typ. 2 pF

Note

1. Measured under pulse conditions: t

≤ 200 µs; δ≤0,02.

August 1986 4

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Philips Semiconductors Product speciﬁcation

VHF power transistor BLV11

handbook, halfpage

0 2.5 5

MGP263

VCE = 13.5 V

5 V

IC (A)

Fig.4 Typical values; Tj=25°C.

100

handbook, halfpage

(pF)

01020

Fig.5 IE=Ie= 0; f = 1 MHz; Tj=25°C.

MGP264

typ

VCB (V)

1000

handbook, full pagewidth

(MHz)

800

600

400

200

02 6

Fig.6 Typical values; f = 100 MHz; Tj=25°C.

August 1986 5

VCB = 13.5 V

10 V

MGP265

−IE (A)

Page 6

Philips Semiconductors Product speciﬁcation

VHF power transistor BLV11

APPLICATION INFORMATION

R. F. performance in c.w. operation (unneutralized common-emitter class-B circuit) T

=25°C

f (MHz) V

(V) PL(W) PS(W) Gp(dB) IC(A) η (%) zi(Ω) YL(mS)

175 13,5 15 < 2,4 > 8,0 < 1,85 > 60 2,3 + j2,2 130 − j4,4

175 12,5 15 − typ. 7,5 − typ. 67 −−

handbook, full pagewidth

50 Ω

T.U.T.

MGP253

50 Ω

Fig.7 Test circuit; c.w. class-B.

List of components:

C1 = 2,5 to 20 pF ﬁlm dielectric trimmer (cat. no. 2222 809 07004) C2 = C6 = 4 to 40 pF ﬁlm dielectric trimmer (cat. no. 2222 809 07008) C3 = 47 pF ceramic capacitor (500 V) C4 = 120 pF ceramic capacitor (500 V) C5 = 100 nF polyester capacitor C7 = 5 to 60 pF ﬁlm dielectric trimmer (cat. no. 2222 809 07011) L1 = 2 turns Cu wire (1,6 mm); int. dia. 4,5 mm; length 5,7 mm; leads 2 × 5 mm L2 = L6 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L3 = L4 = strip (12 mm × 6 mm); tap for C3 at 5 mm from transistor L5 = 3 turns Cu wire (1,6 mm); int. dia. 7,5 mm; length 7,5 mm; leads 2 × 5 mm L7 = 3 turns Cu wire (1,6 mm); int. dia. 6,5 mm; length 7,4 mm; leads 2 × 5 mm L3 and L4 are strips on a double Cu-clad printed-circuit board with epoxy ﬁbre-glass dielectric, thickness 1/16". R1 = 10 Ω carbon resistor Component layout and printed-circuit board for 175 MHz test circuit see Fig.8.

August 1986 6

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Philips Semiconductors Product speciﬁcation

VHF power transistor BLV11

handbook, full pagewidth

150

C5 R1

rivet

MGP254

C1 C2

Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.

The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets.

August 1986 7

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Philips Semiconductors Product speciﬁcation

VHF power transistor BLV11

handbook, halfpage

(W)

0 2.5 5 7.5

 VCE= 13,5 V;

−−−V

= 12,5 V.

MGP266

Th = 25 °C

70 °C

PS (W)

Fig.9 Typical values; f = 175 MHz;

handbook, halfpage

 VCE= 13,5 V;

−−−V

(dB)

7.5

2.5

5101520

= 12,5 V.

Fig.10 Typical values; f = 175 MHz.

Th = 25 °C

70 °C

Th = 25 °C

70 °C

PL (W)

MGP267

100

(%)

handbook, halfpage

Lnom

(W)

The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio with VSWR as parameter.

The graph applies to the situation in which the drive (P over-voltage ratio.

) increases linearly with supply

S/PSnom

(VSWR = 1)

1 1.1 1.2 1.3

Fig.11 R.F. SOAR (short-time operation during mismatch); f = 175 MHz; Th=70°C;

th mb-h

= 0,3 K/W; V

= 13,5 V or 12,5 V; PS=P

CEnom

August 1986 8

Snom

VSWR =

4.5 5

20 50

at V

MGP268

Snom V

CEnom

and VSWR = 1.

CEnom

Page 9

Philips Semiconductors Product speciﬁcation

VHF power transistor BLV11

handbook, halfpage

ri, x

(Ω)

2.5

−2.5

Typical values: VCE= 13,5 V;

= 15 W;

=25°C

−5 0 100 200

f (MHz)

Fig.12 Input impedance (series components).

MGP269

300

handbook, halfpage

(Ω)

Typical values: VCE= 13,5 V;

= 15 W;

=25°C

0 100 200

f (MHz)

Fig.13 Load impedance (parallel components).

OPERATING NOTE

MGP270

300

(pF)

−50

−100

−150

−200

handbook, halfpage

(dB)

0 100 200

Typical values: VCE= 13,5 V;

= 15 W;

=25°C

Fig.14

f (MHz)

MGP271

Below 50 MHz a base-emitter resistor of 10 Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only.

300

August 1986 9

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Philips Semiconductors Product speciﬁcation

VHF power transistor BLV11

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT123A

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.82

5.56

9.73

0.18

9.47

0.10

0.397

0.383

0.007

0.004

IEC JEDEC EIAJ

0.373

0.371

9.63

9.42

2.72

20.71

2.31

0.107

0.091

5.61

19.93

5.16

0.815

0.221

0.785

0.203

REFERENCES

3.33

3.04

0.131

0.120

4.63

4.11

0.182

0.162

18.42

0.725

25.15

24.38

0.99

0.96

U2U

6.61

6.09

0.26

0.24

9.78

9.39

0.385

0.370

EUROPEAN

PROJECTION

UNIT

inches

7.47

6.37

0.229

0.294

0.219

0.251

OUTLINE VERSION

SOT123A 97-06-28

August 1986 10

1.020.51

0.040.02

ISSUE DATE

αL

45°

Page 11

Philips Semiconductors Product speciﬁcation

VHF power transistor BLV11

DEFINITIONS

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

August 1986 11