Datasheet BLV103 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV103

UHF power transistor

Product specification

March 1993

Philips Semiconductors Product specification

UHF power transistor BLV103

FEATURES

• Internal matching for an optimum
wideband capability and high gain

• Emitter-ballasting resistors for
optimum temperature profile

• Gold metallization ensures
excellent reliability.

DESCRIPTION

NPN silicon planar epitaxial transistor
encapsulated in a 6-lead SOT171
flange envelope with a ceramic cap. It
is intended for common emitter,
class-AB operation in cellular radio
base stations in the 960 MHz
frequency band. All leads are isolated
from the mounting base.

PINNING - SOT171

PIN DESCRIPTION

1 emitter
2 emitter
3 base
4 collector
5 emitter
6 emitter

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

=25°C in a common emitter test circuit.

h

f

(MHz)

V

(V)

CE

P

(W)

L

G

(dB)

p

η

C

(%)

c.w. class-AB 960 24 4 > 11.5 > 45

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

PIN CONFIGURATION

, halfpage

1

3
5

2

4
6

handbook, halfpage

b

MBB012

c

e

Top view

March 1993 2

MBA931 - 1

Fig.1 Simplified outline and symbol.

Philips Semiconductors Product specification

UHF power transistor BLV103

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 30 V
emitter-base voltage open collector − 4V
collector current DC or average value − 1.25 A
total power dissipation Tmb=25°C − 17 W
storage temperature range −65 150 °C
junction operating temperature − 200 °C

handbook, halfpage

5

I

C

(A)

1

0.1
110

(1) Second breakdown limit (independent of temperature).

Th = 70 oC

Tmb = 25 oC

(1)

VCE (V)

Fig.2 DC SOAR.

MRA366

25

handbook, halfpage

P

tot

(W)

20

15

10

5

2

10

0

0204060

(1) Continuous DC operation.
(2) Continuous RF operation.
(3) Short time operation during mismatch.

(3)

(2)
(1)

80

MRA365

100 120

o

C)

Th (

Fig.3 Power/temperature derating.

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

R

th mb-h

from junction to mounting base Tmb=25°C;

P

=17W

dis

10.3 K/W

from mounting base to heatsink 0.4 K/W

March 1993 3

Philips Semiconductors Product specification

UHF power transistor BLV103

CHARACTERISTICS

T

= 25 °C.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CES

h

FE

C

c

C

re

collector-base breakdown voltage open emitter;

IC=4mA

collector-emitter breakdown voltage open base;

IC=30mA

emitter-base breakdown voltage open collector;

IE=2mA

collector-emitter leakage current VBE=0;

VCE=30V

DC current gain VCE=25V;

IC= 300 mA

collector capacitance VCB=25V;

IE=Ie=0;
f = 1 MHz

feedback capacitance VCE=25V;

IC= 20 mA;
f = 1 MHz

50 −− V

30 −− V

4 −− V

−−1mA

20 40 −

− 6.6 8 pF

− 3.5 4.5 pF

50

handbook, halfpage

h

FE

40

30

20

10

0

0 0.2 0.4 0.6

VCE = 25 V

5 V

MRA361

0.8 1
IC (A)

Fig.4 DC current gain as a function of collector

current, typical values.

20

handbook, halfpage

C

c

(pF)

10

0

010

IE=ie = 0; f= 1 MHz.

20

VCB (V)

Fig.5 Collector capacitance as a function of

collector-base voltage, typical values.

MRA358

30

March 1993 4

Philips Semiconductors Product specification

UHF power transistor BLV103

APPLICATION INFORMATION

RF performance at T

=25°C in a common emitter test circuit, R

h

th mb-h

= 0.4 K/W.

MODE OF OPERATION

f

(MHz)

V

(V)

CE

I

CQ

(mA)

P

(W)

L

c.w. class-AB 960 24 5 4 > 11.5

typ. 13

960 26 5 4 typ. 14 typ. 50

16

handbook, halfpage

G

P

(dB)

12

8

4

0

024

G

P

η

MRA359

80

η

(%)

60

40

20

68

P

0

(W)

L

handbook, halfpage

8

P

L

(W)

6

4

2

0

0 200 400

V

CE

G

P

(dB)

= 26 V

24 V

600 800

> 45
typ. 48

MRA364

PIN (mW)

η

(%)

c

Class-AB operation; ICQ=5mA;f = 960 MHz;

=24V.

V

CE

Fig.6 Gain and efficiency as functions of load

power, typical values.

March 1993 5

Class-AB operation; ICQ=5mA;f = 960 MHz.

Fig.7 Load power as a function of drive power,

typical values.

Ruggedness in class-AB operation

The BLV103 is capable of withstanding a full load
mismatch corresponding to VSWR = 50:1 through all
phases at rated output power under the following
conditions:

VCE= 24 V; f = 960 MHz; Th=25°C;
R

th mb-h

= 0.4 K/W.

Philips Semiconductors Product specification

UHF power transistor BLV103

handbook, full pagewidth

50 Ω
input

R1

V

B

C7

L1 L2 L3

C1

L6

C2

C6 C8

L5

D.U.T.

C5

L4 L9

C3 C4 C11

C12

L10

R2

L8

L7

L11 L12

C13 C14

C15

C10C9

50 Ω

output

MDA537

V

CC

Fig.8 Class-AB test circuit at f = 960 MHz.

List of components (see test circuit)

COMPONENT DESCRIPTION VALUE DIMENSIONS

C1, C6, C7, C8,

multilayer ceramic chip capacitor 330 pF

CATALOGUE

NO.

C15
C2, C3, C13,

C14
C4, C5 multilayer ceramic chip capacitor

film dielectric trimmer 1.4 to

5.5 pF

5.1 pF

2222 809 09001

(note 1)
C9 35 V solid aluminum capacitor 2.2 µF 2222 128 50228
C10 multilayer ceramic chip capacitor 3 × 100 nF

in parallel
C1 1, C12 multiplayer ceramic chip capacitor (note 2) 6.2 pF
L1, L12 stripline (note 3) 50 Ω 9 mm × 2.4 mm
L2, L11 stripline (note 3) 50 Ω 23 mm × 2.4 mm
L3 stripline (note 3) 50 Ω 16 mm × 2.4 mm
L4 stripline (note 3) 43 Ω 3mm×3mm
L5 3 turns enamelled 0.8 mm copper wire int. dia. 3 mm;

length 5 mm;

leads 2 mm × 5 mm
L6, L8 grade 3B Ferroxcube wideband HF choke 4312 020 36642
L7 4 turns enamelled 0.8 mm copper wire int. dia. 4 mm;

length 5 mm;

leads 2 mm × 5 mm
L9 stripline (note 3) 43 Ω 14.5 mm × 3mm
L10 stripline (note 3) 50 Ω 4.5 mm × 2.4 mm
R1, R2 0.4 W metal film resistor 10 Ω 2322 151 71009

March 1993 6

Philips Semiconductors Product specification

UHF power transistor BLV103

Notes

1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.

2. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

3. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr= 2.2);
thickness1⁄32inch.

handbook, full pagewidth

122 mm

copper straps copper straps

rivets

M2

copper straps copper straps

M3

C7 L6

L8

rivets

rivetsrivets

rivetsrivets

70 mm

R1

C1

L1

The circuit and components are situated on one side of a copper-clad PTFE fibre-glass board; the other side is fully metallized
and serves as a ground plane. Connections are made by means of fixing screws, hollow rivets and copper straps around the
board and under the emitters, to provide a direct contact between the components side and the ground plane.

L2 L3

C3C3 C14

C6

L5

C5

C4

C8

L4

C10

R2

L7

C12

L9

L10

C11

C13

C9

L11

Fig.9 Component layout for 960 MHz class-AB test circuit.

March 1993 7

L12

C15

MDA536

Philips Semiconductors Product specification

UHF power transistor BLV103

10

handbook, halfpage

Z

i

(Ω)

8

6

4

2

0

840 880 920

Class-AB operation; VCE= 24 V; ICQ= 5 mA;

= 4 W; Th=25°C.

P

L

MRA362

r

i

x

i

960 1000

f (MHz)

Fig.10 Input impedance (series components) as a

function of frequency, typical values.

16

handbook, halfpage

Z

L

(Ω)

12

8

4

0

840 880 920

Class-AB operation; VCE= 24 V; ICQ= 5 mA;

= 4 W; Th=25°C.

P

L

X

L

R

L

MRA363

960 1000

f (MHz)

Fig.11 Load impedance (series components) as a

function of frequency, typical values.

handbook, halfpage

Z

i

Z

L

Fig.12 Definition of transistor impedance.

MBA451

handbook, halfpage

16

G

P

(dB)

12

8

4

0

840 880

Class-AB operation; VCE= 24 V; ICQ= 5 mA;

= 4 W; Th=25°C.

P

L

920 960 1000

f (MHz)

Fig.13 Power gain as a function of frequency,

typical values.

MRA360

March 1993 8

Philips Semiconductors Product specification

UHF power transistor BLV103

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 6 leads SOT171A

D

A

F

D

1

U

1

q

H

1

b

1

2

H

U

2

Db

9.25

9.04

0.364

0.356

1

D

9.30

8.99

0.366

0.354

A

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

6.81

6.07

0.268

0.239

2.15

1.85

0.085

0.073

b

1

3.20

2.89

0.126

0.114

c

0.16

0.07

0.006

0.003

456

3

b

e

0 5 10 mm

E

1

5.95

5.74

0.234

0.236

0.226

0.224

E

6.00

5.70

e

1

3.58

0.140

C

w

M

C

2

p

w

M

3

scale

F

H

11.31

3.05

10.54

2.54

0.445

0.120

0.415

0.100

B

w

H

1

9.27

9.01

0.365

0.355

c

E

1

M

AB

1

Q

qw

18.42

U

24.90

24.63

0.980

0.970

1

0.236

0.224

p

3.43

3.17

0.135

0.125

Q

4.32

4.11

0.170

0.162

E

w

U

6.00

5.70

2

2

1

w

3

0.260.51 1.02

0.010.02 0.040.725

OUTLINE
VERSION

SOT171A 97-06-28

IEC JEDEC EIAJ

REFERENCES

EUROPEAN

PROJECTION

March 1993 9

ISSUE DATE

Philips Semiconductors Product specification

UHF power transistor BLV103

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

March 1993 10