Datasheet BLV10 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV10

VHF power transistor

Product specification

August 1986

Philips Semiconductors Product specification

VHF power transistor BLV10

DESCRIPTION

N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, h.f. and
v.h.f. transmitters with a nominal
supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.

QUICK REFERENCE DATA

R.F. performance up to T

MODE OF OPERATION V

= 25 °C in an unneautralized common-emitter class-B circuit

h

CE

V

c.w. 13,5 175 8 > 9,0 > 70 2,8 + j1,2 76 − j16

c.w. 12,5 175 8 typ. 10,5 typ. 75 −−

PIN CONFIGURATION

handbook, halfpage

1

It has a 3/8” flange envelope with a
ceramic cap. All leads are isolated
from the flange.

f

MHz

P

L

W

4

G
dB

P

η

%

z

i

Ω

PINNING

PIN DESCRIPTION

1 collector
2 emitter
3 base
4 emitter

Y

mS

L

23

MSB057

Fig.1 Simplified outline, SOT123.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

August 1986 2

Philips Semiconductors Product specification

VHF power transistor BLV10

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (V

peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T

BE

= 0)

CESM
CEO

EBO
C(AV)
CM

=25°CP

mb

rf

stg

j

max. 36 V
max. 18 V
max. 4 V
max. 1,5 A
max. 4,0 A
max. 20 W

−65 to + 150 °C
max. 200 °C

1.75

handbook, halfpage

I

C

(A)

1.5

1.25

1

0.75

0.5
5101520

Th = 70 °C

Fig.2 D.C. SOAR.

Tmb = 25 °C

VCE (V)

MGP248

30

handbook, halfpage

P

tot

(W)

20

10

0

0 50 100

I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch

ΙΙΙ

derate by 0.12 W/K

ΙΙ

0.1 W/K

Ι

Fig.3 R.F. power dissipation;

VCE≤ 16,5 V; f > 1 MHz.

MGP249

Th (°C)

August 1986 3

Philips Semiconductors Product specification

VHF power transistor BLV10

THERMAL RESISTANCE

(dissipation = 8 W; T

From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R

CHARACTERISTICS

T

=25°C

j

Collector-emitter breakdown voltage

= 0; IC= 5 mA V

V

BE

Collector-emitter breakdown voltage

open base; I

C

Emitter-base breakdown voltage

open collector; IE= 1 mA V

Collector cut-off current

V

= 0; VCE= 18 V I

BE

Second breakdown energy; L = 25 mH; f = 50 Hz

open base E
R

=10Ω E

BE

D.C. current gain

I

= 0,75 A; VCE=5 V h

C

Collector-emitter saturation voltage

IC= 2 A; IB= 0,4 A V

Transition frequency at f = 100 MHz

−IE= 0,75 A; VCB= 13,5 V f

−I

= 2 A; VCB= 13,5 V f

E

Collector capacitance at f = 1 MHz

I

=0;VCB= 13,5 V C

E=Ie

Feedback capacitance at f = 1 MHz

= 100 mA; VCE= 13,5 V C

I

C

Collector-flange capacitance C

= 72,4 °C, i.e. Th=70°C)

mb

= 25 mA V

(1)

(1)

(1)

th j-mb(dc)
th j-mb(rf)
th mb-h

(BR) CES

(BR) CEO

(BR)EBO

CES

SBO
SBR

FE

CEsat

T
T

c

re
cf

= 10,7 K/W
= 8,6 K/W
= 0,3 K/W

> 36 V

> 18 V

> 4V

< 2mA

> 0,5 mJ
> 0,5 mJ

typ. 40

10 to 100

typ. 0,85 V

typ. 950 MHz
typ. 850 MHz

typ. 16,5 pF

typ. 12 pF
typ. 2 pF

Note

1. Measured under pulse conditions: t

≤ 200 µs; δ≤0,02.

p

August 1986 4

Philips Semiconductors Product specification

VHF power transistor BLV10

100

handbook, halfpage

h

FE

75

50

25

0

0123

VCE = 13.5 V

5 V

IC (A)

Fig.4 Typical values; Tj=25°C.

MGP250

40

handbook, halfpage

C

c

(pF)

30

20

10

0

05

Fig.5 IE=Ie= 0; f = 1 MHz; Tj= 25 °C.

typ

MGP251

10 15

VCB (V)

1250

handbook, full pagewidth

f

T

(MHz)

1000

750

500

250

0

01 3

VCB = 13.5 V

10 V

Fig.6 Typical values; f = 100 MHz; Tj= 25 °C.

August 1986 5

MGP252

2

−IE (A)

Philips Semiconductors Product specification

VHF power transistor BLV10

APPLICATION INFORMATION

R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit)
T

=25°C

h

f (MHz) V

(V) PL(W) PS(W) GP(dB) IC(A) η (%) zi(Ω) YL(mS)

CE

175 13,5 8 < 1,0 > 9,0 < 0,85 > 70 2,8 + j1,2 76 − j16

175 12,5 8 − typ. 10,5 − typ. 75 −−

handbook, full pagewidth

50 Ω

C1

C2

L4

T.U.T.

L1

L3

L2

C3

C4

L5

L6

+V

CC

C5

C6

L7

R1

MGP253

50 Ω

C7

Fig.7 Test circuit; c.w. class-B.

List of components:

C1 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C2 = C6 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
C3 = 47 pF ceramic capacitor (500 V)
C4 = 120 pF ceramic capacitor (500 V)
C5 = 100 nF polyester capacitor
C7 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
L1 = 2 turns Cu wire (1,6 mm); int. dia. 4,5 mm; length 5,7 mm; leads 2 × 5 mm
L2 = L6 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3 = L4 = strip (12 mm × 6 mm); tap for C3 at 5 mm from transistor
L5 = 3 turns Cu wire (1,6 mm); int. dia. 7,5 mm; length 7,5 mm; leads 2 × 5 mm
L7 = 3 turns Cu wire (1,6 mm); int. dia. 6,5 mm; length 7,4 mm; leads 2 × 5 mm
L3 and L4 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
R1 = 10 Ω carbon resistor
Component layout and printed-circuit board for 175 MHz test circuit see Fig.8.

August 1986 6

Philips Semiconductors Product specification

VHF power transistor BLV10

handbook, full pagewidth

150

C4

L6

C5 R1

+V

72

CC

rivet

L5

L4

L7

C6

C7

MGP254

C1 C2

L3

L1

L2

C3

Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.

The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.

August 1986 7

Philips Semiconductors Product specification

VHF power transistor BLV10

15

handbook, halfpage

P

L

(W)

10

5

0

012

 VCE= 13,5V;

− − − V

= 12,5 V.

CE

MGP255

Th = 25 °C

70 °C

PS (W)

Fig.9 Typical values; f = 175 MHz;

15

handbook, halfpage

 VCE= 13,5 V;

− − − V

G

G

p

(dB)

10

5

0

0 5 10 20

= 12,5 V.

CE

Fig.10 Typical values; f = 175 MHz;

MGP256

p

Th = 70 °C

25 °C

η

25 °C
70 °C

15

PL (W)

150

η

(%)

100

50

0

The transistor has been developed for use with
unstabilized supply voltages. As the output power
and drive power increase with the supply voltage,
the nominal output power must be derated in
accordance with the graph for safe operation at
supply voltages other than the nominal. The graph
shows the permissible output power under nominal
conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
parameter.

The graph applies to the situation in which the drive
(P
over-voltage ratio.

) increases linearly with supply

S/PSnom

(VSWR = 1)

10

handbook, halfpage

P

Lnom
(W)

7.5

5

2.5

0

0 1.1 1.2 1.3

VSWR =

10
50

Fig.11 R.F. SOAR (short-time operation during mismatch); f = 175 MHz; Th= 70 °C; R

V

= 13,5 V or 12,5 V; PS=P

CEnom

Snom

at V

and VSWR = 1.

CEnom

August 1986 8

P

P

Snom
V

V

CEnom

S

CE

MGP257

th mb-h

= 0,3 K/W;

Philips Semiconductors Product specification

VHF power transistor BLV10

10

handbook, halfpage

ri, x

i

(Ω)

5

r

i

0

x

i

−5

−10

0 100 200

Typical values; VCE= 13,5 V; PL= 8 W;

=25°C

T

h

f (MHz)

Fig.12 Input impedance (series components).

MGP258

x

i

r

i

300

25

handbook, halfpage

R

L

R

(Ω)

20

15

10

Typical values; VCE= 13,5 V; PL= 8 W;

=25°C

T

h

L

C

L

5

0 100 200

C

L

R

L

f (MHz)

Fig.13 Load impedance (parallel components).

OPERATING NOTE

MGP259

300

0

C

(pF)

−50

−100

−150

−200

L

20

handbook, halfpage

G

p

(dB)

15

10

5

0

0 100 200

Typical values; VCE= 13,5 V; PL= 8 W;

=25°C

T

h

Fig.14

f (MHz)

MGP260

Below 70 MHz a base-emitter resistor of 10 Ω is
recommended to avoid oscillation. This resistor must be
effective for r.f. only.

300

August 1986 9

Philips Semiconductors Product specification

VHF power transistor BLV10

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT123A

D

A

F

H

α

1

H

q

U

1

L

C

B

w

M

C

2

b

43

p

2

0 5 10 mm

scale

A

U

2

w

M

AB

1

c

U

3

Q

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.82

5.56

c

Db

9.73

0.18

9.47

0.10

0.397

0.383

0.007

0.004

IEC JEDEC EIAJ

0.373

0.371

D

9.63

9.42

F

1

2.72

20.71

2.31

0.107

0.091

5.61

19.93

5.16

0.815

0.221

0.785

0.203

REFERENCES

pH

3.33

3.04

0.131

0.120

Q

4.63

4.11

0.182

0.162

q

18.42

0.725

U

1

25.15

24.38

0.99

0.96

U2U

6.61

6.09

0.26

0.24

PROJECTION

w

3

9.78

9.39

0.385

0.370

EUROPEAN

1

UNIT

inches

A

7.47

mm

6.37

0.229

0.294

0.219

0.251

OUTLINE

VERSION

SOT123A 97-06-28

August 1986 10

w

2

1.020.51

0.040.02

ISSUE DATE

αL

45°

Philips Semiconductors Product specification

VHF power transistor BLV10

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

August 1986 11