Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLU99
BLU99/SL
UHF power transistor
Product specification
March 1993
Page 2
Philips Semiconductors Product specification
UHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
mobile radio transmitters in the u.h.f.
band. The transistor is also very
suitable for application in the
900 MHz mobile radio band.
QUICK REFERENCE DATA
R.F. performance at T
MODE OF OPERATION
narrow band; c.w.
=25°C in a common-emitter class-B circuit.
h
BLU99
BLU99/SL
FEATURES
• multi-base structure and diffused
emitter-ballasting resistors for an
optimum temperature profile;
• gold metallization ensures
excellent reliability.
The BLU99 has a 4-lead stud
envelope with a ceramic cap
(SOT122A). All leads are isolated
from the stud. The BLU99/SL is a
studless version (SOT122D).
V
CE
V
12,5 470 5 > 10,5 > 60
12,5 900 4 typ. 7,0 typ. 60
f
MHz
P
W
L
G
p
dB
η
C
%
PIN CONFIGURATION
PINNING - SOT122A; SOT122D
PIN DESCRIPTION
page
ge
4
31
4
1 collector
2 emitter
31
3 base
4 emitter
2
Top view
Fig.1 Simplified outline.
SOT122A
(BLU99).
MBK187
2
MSB055
Fig.2 Simplified outline.
SOT122D
(BLU99/SL).
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
March 1993 2
Page 3
Philips Semiconductors Product specification
UHF power transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current
d.c. or average I
peak value; f > 1 MHz I
D.C. power dissipation up to T
=50°CP
mb
R.F. power dissipation
f > 1 MHz; T
=25°CP
mb
Storage temperature T
Operating junction temperature T
MDA372
I
(A)
1
C
handbook, halfpage
Tmb = 50 °C
Th = 70 °C
CBO
CEO
EBO
C;IC(AV)
CM
tot (d.c.)
tot (r.f.)
stg
j
28
handbook, halfpage
P
tot
(W)
20
BLU99
BLU99/SL
max. 36 V
max. 16 V
max. 3 V
max. 0,8 A
max. 2,5 A
max. 12,5 W
max. 19 W
−65 to + 150 °C
max. 200 °C
MDA373
III
12
−1
R
10
th mb-h
1
= 0,6 K/W.
10 10
VCE (V)
2
I Continuous d.c. operation
II Continuous r.f. operation (f > 1 MHz).
III Short-time r.f. operation during mismatch (f > 1 MHz).
Fig.3 D.C. SOAR.
THERMAL RESISTANCE
(dissipation = 9 W; T
=25°C)
mb
From junction to mounting base
(d.c. dissipation) R
From junction to mounting base
(r.f. dissipation) R
From mounting base to heatsink R
II
I
4
0
20
40 60 80
Th (°C)
100
Fig.4 Power/temperature derating curves.
th j-mb(dc)
th j-mb(rf)
th mb-h
= 10 K/W
= 7,5 K/W
= 0,6 K/W
March 1993 3
Page 4
Philips Semiconductors Product specification
UHF power transistor
CHARACTERISTICS
T
=25°C unless otherwise specified
j
Collector-base breakdown voltage
open emitter; I
Collector-emitter breakdown voltage
open base; IC= 20 mA V
Emitter-base breakdown voltage
open collector; IE= 1 mA V
Collector cut-off current
VBE= 0; VCE= 16 V I
Second breakdown energy; L = 25 mH; f = 50 Hz
R
=10Ω E
BE
D.C. current gain
IC= 0,6 A; VCE= 10 V h
Transition frequency at f = 500 MHz
IC= 0,6 A; VCE= 12,5 V f
Collector capacitance at f = 1 MHz
I
= 0; VCB= 12,5 V C
E=Ie
Feedback capacitance at f = 1 MHz
I
= 0; VCE= 12,5 V C
C
Collector-stud capacitance C
= 10 mA V
C
(2)
(1)
(BR)CBO
(BR)CEO
(BR)EBO
CES
SBR
FE
T
c
re
cs
BLU99
BLU99/SL
> 36 V
> 16 V
> 3V
< 5mA
> 1mJ
>
typ.25100
typ. 4,0 GHz
typ. 7,5 pF
typ. 5 pF
typ. 1,2 pF
Notes
1. Measured under pulse conditions: t
=50µs; δ<0,01.
p
2. Measured under pulse conditions: tp= 300 µs; δ<0,01.
March 1993 4
Page 5
Philips Semiconductors Product specification
UHF power transistor
120
handbook, halfpage
h
FE
80
40
0
0
0.8
MDA374
1.6 2.4
IC (A)
handbook, halfpage
5
f
T
(GHz)
4
3
2
1
0
02
0.4 0.8 1.2
BLU99
BLU99/SL
MDA375
1.6
IE (A)
Fig.5 VCE= 10 V; Tj=25°C; typ. values.
16
handbook, halfpage
C
c
(pF)
14
12
10
8
6
020
4812
16
VCB (V)
Fig.6 VCB= 12,5 V; f = 500 MHz; Tj=25°C;
typ. values.
MDA376
Fig.7 IE=ie= 0; f = 1 MHz; typ. values.
March 1993 5
Page 6
Philips Semiconductors Product specification
UHF power transistor
APPLICATION INFORMATION (part I)
R.F. performance in c.w. operation (common-emitter class-B circuit) at f = 470 MHz; T
V
MODE OF OPERATION
CE
V
narrow band; c.w. 12,5 5
handbook, full pagewidth
50 Ω
C1
C2
C4
L1
C3
L3 R1
P
L
W
P
S
W
< 0,45 > 10,5 < 0,665 > 60
typ. 0,32 typ. 12 typ. 0,60 typ. 66
T.U.T.
L6
L2
C5 C6
L4
+V
L7
L5
R2
CC
h
G
dB
MDA365
=25°C.
p
C8
C7
BLU99
BLU99/SL
I
C
A
50 Ω
η
C
%
Fig.8 Class-B test circuit at f = 470 MHz.
List of components:
C1 = 2,7 pF multilayer ceramic chip capacitor
(1)
C2 = C7 = C8 = 1,4-5,5 pF film dielectric trimmer (cat.no. 2222 809 09001)
C3 = 7,5 pF multilayer ceramic chip capacitor
(1)
C4 = 2-9 pF film dielectric trimmer (cat.no. 2222 809 09002)
C5 = 100 pF multilayer ceramic chip capacitor (cat. no. 2222 852 13101)
C6 = 100 nF metallized film capacitor (cat. no. 2222 352 45104)
L1 = stripline, 22,5 mm × 6,0 mm
L2 = 1 turn Cu-wire (1,0 mm), int. dia. 5,5 mm, leads 2 × 5 mm
L3 = L4 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642)
L5 = 4 turns enamelled Cu-wire (1,0 mm), int. dia. 6 mm, length 7,5 mm, leads 2 × 5 mm
L6 = stripline, 10,0 mm × 6,0 mm
L7 = 1 turn Cu-wire (1,0 mm), int. dia. 5 mm, leads 2 × 5 mm
R1 = R2 = 10 Ω metal film resistor, 0,25 W
L1 and L6 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (εr= 2,74) and a
thickness of1⁄16 inch.
Note
1. American Technical Ceramics capacitor type 100 A or capacitor of same quality.
March 1993 6
Page 7
Philips Semiconductors Product specification
UHF power transistor
handbook, full pagewidth
BLU99
BLU99/SL
100 mm
58 mm
rivets
L3
C1 C3
C2 C8
C4
The circuits and the components are on one side of the P.T.F.E. fibre-glass board; the other side is
unetched copper to serve as ground plane. Earth connections are made by hollow rivets.
L2
L1 L6
R1
C6
L7
L5
C5
R2
Fig.9 Printed circuit board and component layout for 470 MHz.
L4
C7
+V
CC
MDA366
March 1993 7
Page 8
Philips Semiconductors Product specification
UHF power transistor
handbook, halfpage
8
P
L
(W)
6
4
2
0
0 0.4
f = 470 MHz; class-B operation; Th=25°C; typ. values.
V
0.8 1.2
CE
PS (W)
MDA377
= 12.5 V
7.5 V
20
handbook, halfpage
G
p
(dB)
16
12
8
4
0
02
f = 470 MHz; class-B operation; Th=25°C; typ. values.
: VCE= 12,5 V;
− − − − : V
CE
= 7,5 V.
η
C
G
p
48
BLU99
BLU99/SL
MDA378
100
η
(%)
80
60
η
C
40
G
p
20
6
P
0
(W)
L
C
Fig.10 Output power.
RUGGEDNESS:
The device is capable of withstanding a load mismatch
with VSWR = 50 (all phases) up to a supply voltage of
15,5 V at rated load power.
Fig.11 Power gain and efficiency;
March 1993 8
Page 9
Philips Semiconductors Product specification
UHF power transistor
handbook, halfpage
4
Z
i
(Ω)
2
0
−2
400
VCE= 12,5 V; PL= 5 W; Th=25°C;
f = 400-520 MHz; typical values.
440
480 560
520
r
i
x
i
f (MHz)
MDA379
10
handbook, halfpage
Z
L
(Ω)
8
6
4
2
0
400 440 480
VCE= 12,5 V; PL= 5 W; Th=25°C;
f = 400-520 MHz; typical values.
BLU99
BLU99/SL
MDA380
R
L
X
L
f (MHz)
560
520
Fig.12 Input impedance (series components).
15
handbook, halfpage
G
p
(dB)
14
13
12
11
10
400 440 480
VCE= 12,5 V; PL= 5 W; Th=25°C;
f = 400-520 MHz; typical values.
520
MDA381
f (MHz)
Fig.13 Load impedance (series components).
560
Fig.14 Power gain.
March 1993 9
Page 10
Philips Semiconductors Product specification
UHF power transistor
BLU99
BLU99/SL
APPLICATION INFORMATION (part II)
R.F. performance in c.w. operation (common-emitter class-B circuit) at f = 900 MHz; T
MODE OF OPERATION
V
CE
V
P
L
W
P
S
W
narrow band; c.w. 12,5 4 typ. 0,8 typ. 7,0 typ. 0,54 typ. 60
handbook, full pagewidth
50 Ω
C1
L1
C2 C3 C5
C4
L2 L5
L3
BLU99
L6
C6 C10
L7 L10
L8
C7
R2
=25°C
h
G
P
dB
C11 C13
L9
I
A
C
C12
η
%
50 Ω
MDA382
C
L4R1
C8
+V
CC = 12.5 V
Fig.15 Class-B test circuit at f = 900 MHz.
C9
March 1993 10
Page 11
Philips Semiconductors Product specification
UHF power transistor
BLU99
BLU99/SL
List of components:
C1 = C12 = 33 pF multilayer ceramic chip capacitor
C2 = C13 = 1,4-5,5 pF film dielectric trimmer (cat. no. 2222 809 09001)
C3 = C11 = 1,2-3,5 pF film dielectric trimmer (cat. no. 2222 809 05001)
C4 = C5 = C10 = 6,2 pF multilayer ceramic chip capacitor
C6 = 1 pF multilayer ceramic chip capacitor
C7 = 10 pF ceramic feed-through capacitor
C8 = 330 pF ceramic feed-through capacitor
C9 = 2,2 µF tantalum electrolytic capacitor
L1 = stripline, 21,0 mm × 1,85 mm
L2 = stripline, 5,0 mm × 1,85 mm
L3 = 60 nH, 4 turns enamelled Cu-wire (0,4 mm), close wound, int. dia. 3 mm
L4 = L9 = Ferroxcube wideband h.f. choke, grade 3B (cat. no 4312 020 36642)
L5 = stripline, 11,3 mm × 6,0 mm
L6 = stripline, 10,0 mm × 6,0 mm
L7 = stripline, 15,9 mm × 1,85 mm
L8 = 280 nH, 15 turns enamelled Cu-wire (0,4 mm), close wound, int. dia. 3 mm
L10 = stripline, 28,0 mm × 1,85 mm
R1 = R2 = 10 Ω metal film resistor, 0,25 W
L1, L2, L5, L6, L7 and L10 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric
(ε
= 2,74) and thickness of1⁄32 inch.
r
(1)
(1)
(1)
Note
1. American Technical Ceramics capacitor type 100 A or capacitor of same quality.
March 1993 11
Page 12
Philips Semiconductors Product specification
UHF power transistor
handbook, full pagewidth
128.5 mm
soldered
copperstraps
E
BC
E
BLU99
BLU99/SL
80 mm
rivets
C10
C11
L9
R2
C9
V
CC
C7 C8
R1L4
L8
L3
C1 C12
C2 C13
The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper to serve as a
ground plane. Earth connections are made by hollow rivets and also by fixing screws and copper straps around the board and under
the emitters to provide a direct contact between the copper on the component side and the ground plane.
C4
C5
C3
E
BC
C6
E
Fig.16 Printed circuit board and component layout for a 900 MHz test circuit.
RUGGEDNESS
The device is capable of withstanding a load mismatch
with VSWR = 50 (all phases) up to a supply voltage of
15,5 V at rated load power.
MDA383
March 1993 12
Page 13
Philips Semiconductors Product specification
UHF power transistor
handbook, halfpage
5
P
L
(W)
4
3
2
1
0
0 0.4 0.8
f = 900 MHz; VCE= 12,5 V; class-B operation;
=25°C; typ. values.
T
h
1.2
MDA384
PS (W)
1.6
10
handbook, halfpage
G
p
(dB)
8
G
6
4
2
0
f = 900 MHz; VCE= 12,5 V; class-B operation;
=25°C; typ. values.
T
h
p
η
C
05
12
3
BLU99
BLU99/SL
MDA385
100
η
C
(%)
80
60
40
20
4
PL (W)
0
Fig.17 Output power.
Fig.18 Power gain and efficiency.
March 1993 13
Page 14
Philips Semiconductors Product specification
UHF power transistor
handbook, halfpage
6
Z
i
(Ω)
4
2
0
800 1000
f = 800-960 MHz; VCE= 12,5 V; PL= 4 W;
=25°C; typ. values.
T
h
840
880 920 960
MDA386
x
i
r
i
f (MHz)
14
handbook, halfpage
Z
L
(Ω)
10
6
2
800 1000
f = 800-960 MHz; VCE= 12,5 V; PL= 4 W;
=25°C; typ. values.
T
h
840
880 920 960
BLU99
BLU99/SL
MDA387
R
L
X
L
f (MHz)
Fig.19 Input impedance (series components).
10
handbook, halfpage
G
p
(dB)
9
8
7
6
5
800 850 900
950
f (MHz)
Fig.20 Load impedance (series components).
MDA388
1000
Fig.21 Power gain.
March 1993 14
Page 15
Philips Semiconductors Product specification
UHF power transistor
BLU99
BLU99/SL
PACKAGE OUTLINES
Studded ceramic package; 4 leads SOT122A
D
A
Q
N
1
N
N
3
D
1
D
2
H
b
ceramic
BeO
metal
A
w
X
c
A
M
1
M
M
1
detail X
W
4
L
H
1
2
0 5 10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
D
6.48
6.22
D
1
7.24
6.93
H
2
27.56
9.91
25.78
9.14
UNIT
mm
A
5.97
4.74
b
5.85
5.58
cM
D
0.18
7.50
0.14
7.23
α
3
scale
L
M
1
3.18
1.66
2.66
1.39
N
max.
1.02
1
Q
3
3.38
3.86
2.74
2.92
NN
11.82
11.04
W
8-32
UNC
w
1
0.381
α
90°
OUTLINE
VERSION
SOT122A
IEC JEDEC EIAJ
REFERENCES
March 1993 15
EUROPEAN
PROJECTION
ISSUE DATE
97-04-18
Page 16
Philips Semiconductors Product specification
UHF power transistor
BLU99
BLU99/SL
Studless ceramic package; 4 leads SOT122D
D
A
Q
D
2
H
b
c
4
L
H
1
2
0 5 10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
A
4.17
3.27
b
5.85
5.58
cQ
0.18
0.14
D
7.50
7.23
D
7.24
6.98
1.58
1.27
α
90°
H
2
27.56
25.78
L
9.91
9.14
α
3
OUTLINE
VERSION
SOT122D
IEC JEDEC EIAJ
REFERENCES
March 1993 16
EUROPEAN
PROJECTION
ISSUE DATE
97-04-18
Page 17
Philips Semiconductors Product specification
UHF power transistor
BLU99
BLU99/SL
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
March 1993 17
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