Datasheet BLU97 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLU97

UHF power transistor

Product specification

August 1986

Philips Semiconductors Product specification

UHF power transistor BLU97

DESCRIPTION

N-P-N silicon planar epitaxial
transistor designed for use in mobile
radio transmitters in the 470 MHz
band.

FEATURES

• multi-base structure and
emitter-ballasting resistors for an
optimum temperature profile.

• gold metallization ensures

The transistor has a 4-lead stud
envelope with a ceramic cap
(SOT122A). All leads are isolated
from the stud.

excellent reliability.

QUICK REFERENCE DATA

R.F. performance up to T

MODE OF OPERATION

= 25 °C in a common-emitter class-B circuit

h

V

CE

V

f

MHz

P

W

L

G

p

η

dB

narrow band; c.w. 12,5 470 7 > 8,5 > 55

PIN CONFIGURATION

PINNING - SOT122A.

PIN DESCRIPTION

1 collector
2 emitter

handbook, halfpage

4

31

3 base
4 emitter

C

%

2

Top view

MBK187

Fig.1 Simplified outline. SOT122A.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

August 1986 2

Philips Semiconductors Product specification

UHF power transistor BLU97

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V

CBO
CEO
EBO

Collector current

d.c. or average I
(peak value); f > 1 MHz I

C
CM

Total power dissipation

at Tmb=52°CP
f > 1 MHz; T

=52°CP

mb

Storage temperature T
Operating junction temperature T

tot(d.c.)
tot(r.f.)
stg
j

max. 36 V
max. 16 V
max. 3 V

max. 1,2 A
max. 3,6 A

max. 17 W
max. 22,5 W

−65 to +150 °C
max. 200 °C

CE

(V)

MDA360

40

handbook, halfpage

P

tot

(W)

30

20

10

2

10

I Continuous operation
II Continuous operation (f > 1 MHz).
III Short-time operation during mismatch (f > 1 MHz).

10

handbook, halfpage

I

C

(A)

1

−1

10

110

R

= 0,6 K/W.

th mb-h

Tmb = 52 °C

Th = 70 °C

V

Fig.2 D.C. SOAR.

THERMAL RESISTANCE

Dissipation = 15 W; T

mb

= 25 °C

From junction to mounting base

(d.c. dissipation) R
(r.f. dissipation) R

From mounting base to heatsink R

MDA361

III

II

I

0

0

40 80

120

Th (°C)

160

Fig.3 Power/temperature derating curves.

th j-mb(dc)
th j-mb(rf)
th mb-h

= 7,5 K/W
= 5,6 K/W
= 0.6 K/W

August 1986 3

Philips Semiconductors Product specification

UHF power transistor BLU97

CHARACTERISTICS

T

=25°C unless otherwise specified

j

Collector-base breakdown voltage, open emitter; IC= 15 mA V
Collector-emitter breakdown voltage, open base; I
Emitter-base breakdown voltage, open collector; I
Collector cut-off current, V

= 0; VCE= 16 V I

BE

Second breakdown energy, L = 25 mH; f = 50 Hz; R
D.C. current gain, I
Transition frequency at f = 500 MHz

Collector capacitance at f = 1 MHz, I
Feed-back capacitance at f = 1 MHz, I

= 0,9 A; VCE= 10 V h

C

(1)

, −IE= 0,9 A; VCB= 12,5 V f

= 0; VCB= 12,5 V C

E=ie

= 0; VCE= 12,5 V C

C

= 30 mA V

C

= 1,5 mA V

E

=10Ω E

BE

Collector-stud capacitance C

Note

1. Measured under pulse conditions: t

= 50 µs; δ<1%.

p

(BR)CBO
(BR)CEO
(BR)EBO

CES

SBR

FE

T

c
re
cs

> 36 V
> 16 V
> 3V
< 7,5 mA
> 2,3 mJ
> 25

typ. 100
typ. 4,0 GHz
typ. 10 pF
typ. 7 pF
typ. 1,2 pF

120

handbook, halfpage

h

FE

80

40

0

0

0.8

1.6 3.22.4

Fig.4 Tj=25°C; VCE= 10 V; typical values.

MDA362

IC (A)

4.8

handbook, halfpage

f

T

(GHz)

3.2

1.6

0

0

0.8

1.6 3.22.4

−IE (A)

Fig.5 VCB= 12,5 V; f = 500 MHz; tp=50µs;

Tj=25°C; typical values.

MDA363

August 1986 4

Philips Semiconductors Product specification

UHF power transistor BLU97

20

handbook, halfpage

C

c

(pF)

16

12

8

4

0

020

4812

Fig.6 IE=ie= 0; f = 1 MHz; typical values.

APPLICATION INFORMATION

R.F. performance in common-emitter circuit; class-B: f = 470 MHz; T

16

VCB (V)

= 25 °C

h

MDA364

V

MODE OF OPERATION

CE

V

narrow band; c.w. 12,5 7

handbook, full pagewidth

50 Ω

C1

C2

C4

Fig.7 Class-B test circuit at f = 470 MHz.

P

L

W

P

S

W

G

dB

p

I

C

A

< 0,99 > 8,5 < 1,0 > 55
typ. 0,55 typ. 11,0 typ. 0,8 typ. 70

C3

L1

L2

L3 R1

T.U.T.

L6

C5 C6

L7

L5

L4

+V

CC

C8

50 Ω

C7

R2

MDA365

η

C

%

August 1986 5

Philips Semiconductors Product specification

UHF power transistor BLU97

List of components:

C1 = 2,7 pF multilayer ceramic chip capacitor
C2 = C7 = C8 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001)
C3 = 7,5 pF multilayer ceramic chip capacitor
C4 = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002)
C5 = 100 pF multilayer ceramic chip capacitor
C6 = 100 nF metallized film capacitor
L1 = 38 Ω stripline (22,5 mm × 6,0 mm)
L2 = 15 nH; 1 turn Cu wire (1,0 mm); int. dia. 5 mm; leads 2 × 5 mm
L3 = L4 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642)
L5 = 29 nH; 2 turns enamelled Cu wire (1,0 mm); int. dia. 6 mm; length 3,5 mm; leads 2 × 5 mm
L6 = 38 Ω stripline (10,0 mm × 6,0 mm)
L7 = 7 nH; 1/2 turn Cu wire (1,0 mm); int. dia. 5,0 mm; leads 2 × 5 mm
R1 = R2 = 10 Ω±10%; 0,25 W metal film resistor
L1 and L6 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric

(ε

= 2,74); thickness1⁄16inch.

r

(1)

(1)

Note

1. American Technical Ceramics capacitor type 100A or capacitor of same quality.

August 1986 6

Philips Semiconductors Product specification

UHF power transistor BLU97

handbook, full pagewidth

rivets

C1 C3

100 mm

58 mm

L3

R1

L2

C2 C8

The circuit and the components are on one side of the P.T.F.E. fibre-glass
board; the other side is unetched copper serving as ground plane. Earth
connections are made by hollow rivets and also by copper straps under the
emitters.

L1 L6

C4

Fig.8 Printed circuit board and component lay-out for 470 MHz class-B test circuit.

August 1986 7

C6

R2

L7

L5

L4

C5

C7

+V

CC

MDA366

Philips Semiconductors Product specification

UHF power transistor BLU97

10

handbook, halfpage

P

L

(W)

8

6

4

2

0

0 0.4

VCE= 12,5 V; f = 470 MHz; Th=25°C;
class-B operation; typical values.

Fig.9 Load power vs. source power.

MDA367

0.8 1.2
PS (W)

20

handbook, halfpage

G

p

(dB)

16

12

8

4

0

010

VCE= 12,5 V; f = 470 MHz; Th=25°C;
class-B operation; typical values.

246

MDA368

η

C

G

p

8

PL (W)

Fig.10 Power gain and efficiency vs. load power.

100

η

(%)

80

60

40

20

0

C

RUGGEDNESS

The device is capable of withstanding a full load mismatch
(VSWR = 50; all phases) at rated load power up to a supply
voltage of 15,5 V and Th=25°C.

August 1986 8

Philips Semiconductors Product specification

UHF power transistor BLU97

handbook, halfpage

3

Z

i

(Ω)

2

1

0

−1
400 440 600

VCE= 12,5 V; PL= 7 W; f = 400-520 MHz; Th=25°C;
class-B operation; typical values.

480 520 560

r

i

x

i

Fig.11 Input impedance (series components).

MDA369

f (MHz)

handbook, halfpage

8

Z

L

(Ω)

6

4

2

0

400 440 600

VCE= 12,5 V; PL= 7 W; f = 400-520 MHz; Th=25°C;
class-B operation; typical values.

480 520 560

R

L

X

L

Fig.12 Load impedance (series components).

MDA370

f (MHz)

16

handbook, halfpage

G

p

(dB)

12

8

4

0

400 440 600

VCE= 12,5 V; PL= 7 W; f = 400-520 MHz; Th=25°C;
class-B operation; typical values.

480 520 560

MDA371

f (MHz)

Fig.13 Power gain vs. frequency.

August 1986 9

Philips Semiconductors Product specification

UHF power transistor BLU97

PACKAGE OUTLINE

Studded ceramic package; 4 leads SOT122A

D

A

Q

N

1

N

N

3

L

H

D

1

D

2

H
b

4

ceramic
BeO

metal

A

w

X

c

A

M

1

M

M

1

detail X

W

α

3

1

2

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

OUTLINE

VERSION

SOT122A

A

5.97

4.74

b

5.85

5.58

D

6.48

6.22

D

1

2

27.56

7.24

25.78

6.93

REFERENCES

cM

D

0.18

7.50

0.14

7.23

IEC JEDEC EIAJ

L

H

9.91

3.18

9.14

2.66

August 1986 10

N

M

1

11.82

1.66

11.04

1.39

1

NN

max.

3.86

1.02

2.92

PROJECTION

Q

3

3.38

2.74

EUROPEAN

W

8-32

UNC

w

1

0.381

ISSUE DATE

97-04-18

α

90°

Philips Semiconductors Product specification

UHF power transistor BLU97

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

August 1986 11