Datasheet BLU86 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLU86

UHF power transistor

Product specification

September 1991

Philips Semiconductors Product specification

UHF power transistor BLU86

FEATURES

• SMD encapsulation

• Emitter-ballasting resistors for

optimum temperature profile

• Gold metallization ensures
excellent reliability.

DESCRIPTION

NPN silicon planar epitaxial transistor
encapsulated in a SOT223 surface
mounted envelope and designed
primarily for use in mobile radio
equipment in the 900 MHz
communications band.

PINNING - SOT223

PIN DESCRIPTION

1 emitter
2 base
3 emitter
4 collector

QUICK REFERENCE DATA

RF performance at T

≤ 60 °C in a common emitter class-B test circuit (see

s

note 1).

MODE OF OPERATION

f

(MHz)

V

(V)

CE

P

(W)

L

G

(dB)

p

(%)

c.w. narrow band 900 12.5 1 > 7 > 55

Note

1. T

= temperature at soldering point of collector tab.

s

PIN CONFIGURATION

alfpage

123

Top view

4

MSB002 - 1

handbook, halfpage

MBB012

c

b

e

η

c

Fig.1 Simplified outline and symbol.

September 1991 2

Philips Semiconductors Product specification

UHF power transistor BLU86

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

, I

C

C(AV)

I

CM

P

tot

T

stg

T

j

Note

= temperature at soldering point of collector tab.

1. T

s

collector-base voltage open emitter − 32 V
collector-emitter voltage open base − 16 V
emitter-base voltage open collector − 3V
collector current DC or average value − 200 mA
collector current peak value;

− 600 mA

f > 1 MHz

total power dissipation f > 1 MHz;

− 2W
Ts= 129 °C
(note 1)

storage temperature range −65 150 °C
operating junction temperature − 175 °C

3

10

handbook, halfpage

I

C

(mA)

2

10

10

1

10

Ts = 129 oC

VCE (V)

MRA241

2

10

Fig.2 DC SOAR.

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-s(DC)

from junction to soldering point P

=2W;

tot

23 K/W

Ts= 129 °C

September 1991 3

Philips Semiconductors Product specification

UHF power transistor BLU86

CHARACTERISTICS

T

= 25 °C.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CES

h

FE

E

SBR

C

C

C

re

collector-base breakdown voltage open emitter;

IC= 2.5 mA

collector-emitter breadown voltage open base;

IC=10mA

emitter-base breakdown voltage open collector;

IE= 0.5 mA

collector-emitter leakage current VBE=0;

VCE=16V

DC current gain VCE=10V;

IC= 150 mA

second breakdown energy L = 25 mH;

RBE=10Ω;
f = 50 Hz

collector capacitance VCB= 12.5 V;

IE=Ie=0;
f = 1 MHz

feedback capacitance VCE= 12.5 V;

IC=0;
f = 1 MHz

32 −− V

16 −− V

3 −− V

−−1mA

25 −−

0.3 −− mJ

− 2.2 2.6 pF

− 1.2 1.8 pF

100

handbook, halfpage

h

FE

80

60

40

20

0

0 200 400

VCE = 12.5 V

10 V

MRA237

IC (mA)

600

Fig.3 DC current gain as a function of collector

current; typical values.

September 1991 4

C

(pF)

5

c

4

3

2

1

0

0

510

V

CB

handbook, halfpage

Fig.4 Collector capacitance as a function of

collector-base voltage, typical values.

MRA234

(V)

15

Philips Semiconductors Product specification

UHF power transistor BLU86

APPLICATION INFORMATION

RF performance at T

≤ 60 °C; in a common emitter class-B test circuit (see note 1).

s

MODE OF OPERATION

f

(MHz)

V

(V)

CE

P

(W)

L

c.w. narrow band 900 12.5 1 > 7

Note

= temperature at soldering point of collector tab.

1. T

s

10

handbook, halfpage

G

P

(dB)

8

6

4

2

MRA235

100

η

c

G

P

η

c

(%)

80

60

40

20

handbook, halfpage

P

(W)

1.5

0.5

2

L

1

(dB)

typ. 7.7

G

p

η

c

(%)

> 55
typ. 66

MRA240

0

0 0.4 0.8 1.2

Class-B operation; VCE= 12.5V;f = 900 MHz.

PL (W)

1.6

Fig.5 Gain and efficiency as functions of load

power, typical values.

0

0

Class-B operation; VCE= 12.5 V;f = 900 MHz.

100 300 5000 200

400

PIN (mW)

Fig.6 Load power as a function of drive power,

typical values.

Ruggedness in class-B operation

The BLU86 is capable of withstanding a full load mismatch
corresponding to VSWR = 50:1 through all phases at rated
output power, up to a supply voltage of 15.5 V,
f = 900 MHz and Ts≤ 60 °C, where Tsis the temperature
at the soldering point of the collector tab.

September 1991 5

Philips Semiconductors Product specification

UHF power transistor BLU86

handbook, full pagewidth

50 Ω
input

C1

R1

C2

L1

L2

L5

L6

TUT

C3

L3

C4

L7

L8

R2

C7

C6

L4

C5

C8

C9

50 Ω
output

+V

CC

MBC090

Fig.7 Class-B test circuit at f = 900 MHz.

List of components (see test circuit)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C6 multilayer ceramic chip capacitor

100 pF

(note 1)
C2, C3, C4, C5 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09001
C7 multilayer ceramic chip capacitor

220 pF

(note 1)
C8 multilayer ceramic chip capacitor

1nF

(note 1)
C9 63 V electrolytic capacitor 2.2 µF
L1 stripline (note 2) 50 Ω 17 mm × 4.7 mm
L2 stripline (note 2) 50 Ω 5 mm × 4.7 mm
L3 stripline (note 2) 50 Ω 32 mm × 4.7 mm
L4 stripline (note 2) 50 Ω 20 mm × 4.7 mm
L5, L7 6 turns enamelled 0.8 mm copper wire int. dia. 3 mm
L6, L8 grade 3B1 Ferroxcube wideband HF choke 4312 020 36640
R1, R2 0.25 W metal film resistor 10 Ω, 5%

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines are mounted on a double copper-clad printed circuit board, with PTFE fiber-glass dielectric (εr= 2.2);
thickness1⁄16inch.

September 1991 6

Philips Semiconductors Product specification

UHF power transistor BLU86

handbook, full pagewidth

strap

strap

140 mm

strap

80 mm

rivets
(14x)

mounting

screws

(8x)

V

CC

L6

L8

C9

strap

C7

R1

L5

C1

The circuit and components are situated on one side of a copper-clad PTFE fibre-glass board; the other side is
unetched and serves as a ground plane. Earth connections from the component side to the ground plane are
made by means of fixing screws, hollow rivets and copper foil straps, as shown.

L1

L2

C3C2

L3

R2

L7

Fig.8 Component layout for 900 MHz class-B test circuit.

September 1991 7

C4

C8

L4

C6

C5

MBC089

Philips Semiconductors Product specification

UHF power transistor BLU86

14

handbook, halfpage

Z

i

(Ω)

12

10

8

6

4

2

0

Class-B operation; VCE= 12.5 V; PL=1W.

840

r

i

x

i

920 1000800 880 960

MRA238

f (MHz)

Fig.9 Input impedance (series components) as a

function of frequency, typical values.

50

handbook, halfpage

Z

L

(Ω)

40

30

20

10

0

Class-B operation; VCE= 12.5 V; PL=1W.

R

L

X

L

840 920 1000800 880

MRA239

960

f (MHz)

Fig.10 Load impedance (series components) as a

function of frequency, typical values.

handbook, halfpage

Z

i

Z

L

Fig.11 Definition of transistor impedance.

MBA451

12

handbook, halfpage

G

P

(dB)

10

8

6

4

2

0

Class-B operation; VCE= 12.5 V; PL=1W.

920

960

Fig.12 Power gain as a function of frequency,

typical values.

MRA236

f MHz

1000800 840 880

September 1991 8

Philips Semiconductors Product specification

UHF power transistor BLU86

PACKAGE OUTLINE

Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223

D

c

y

b

1

4

132

e

1

b

p

e

w M

B

E

H

E

A

1

detail X

AB

L

X

v M

A

Q

A

p

0 2 4 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT A1b

mm

A

1.8

1.5

OUTLINE

VERSION

SOT223

0.10

0.01

cD

b

p

1

0.80

3.1

0.32

0.60

2.9

IEC JEDEC EIAJ

0.22

6.7

6.3

e

E

3.7

4.6

3.3

REFERENCES

e1HELpQywv

2.3

September 1991 9

7.3

6.7

1.1

0.7

0.95

0.85

0.1 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

96-11-11
97-02-28

Philips Semiconductors Product specification

UHF power transistor BLU86

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

September 1991 10