NPN silicon planar epitaxial transistor
encapsulated in a SOT223 surface
mounted envelope and designed
primarily for use in mobile radio
equipment in the 900 MHz
communications band.
PINNING - SOT223
PINDESCRIPTION
1emitter
2base
3emitter
4collector
QUICK REFERENCE DATA
RF performance at T
≤ 60 °C in a common emitter class-B test circuit (see
s
note 1).
MODE OF OPERATION
f
(MHz)
V
(V)
CE
P
(W)
L
G
(dB)
p
(%)
c.w. narrow band90012.51> 7> 55
Note
1. T
= temperature at soldering point of collector tab.
s
PIN CONFIGURATION
alfpage
123
Top view
4
MSB002 - 1
handbook, halfpage
MBB012
c
b
e
η
c
Fig.1 Simplified outline and symbol.
September 19912
Page 3
Philips SemiconductorsProduct specification
UHF power transistorBLU86
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
V
CBO
V
CEO
V
EBO
I
, I
C
C(AV)
I
CM
P
tot
T
stg
T
j
Note
= temperature at soldering point of collector tab.
1. T
s
collector-base voltageopen emitter−32V
collector-emitter voltageopen base−16V
emitter-base voltageopen collector−3V
collector currentDC or average value−200mA
collector currentpeak value;
−600mA
f > 1 MHz
total power dissipationf > 1 MHz;
−2W
Ts= 129 °C
(note 1)
storage temperature range−65150°C
operating junction temperature−175°C
3
10
handbook, halfpage
I
C
(mA)
2
10
10
1
10
Ts = 129 oC
VCE (V)
MRA241
2
10
Fig.2 DC SOAR.
THERMAL RESISTANCE
SYMBOLPARAMETERCONDITIONSMAX.UNIT
R
th j-s(DC)
from junction to soldering pointP
=2W;
tot
23K/W
Ts= 129 °C
September 19913
Page 4
Philips SemiconductorsProduct specification
UHF power transistorBLU86
CHARACTERISTICS
T
= 25 °C.
j
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
E
SBR
C
C
C
re
collector-base breakdown voltageopen emitter;
IC= 2.5 mA
collector-emitter breadown voltageopen base;
IC=10mA
emitter-base breakdown voltageopen collector;
IE= 0.5 mA
collector-emitter leakage currentVBE=0;
VCE=16V
DC current gainVCE=10V;
IC= 150 mA
second breakdown energyL = 25 mH;
RBE=10Ω;
f = 50 Hz
collector capacitanceVCB= 12.5 V;
IE=Ie=0;
f = 1 MHz
feedback capacitanceVCE= 12.5 V;
IC=0;
f = 1 MHz
32−− V
16−− V
3−− V
−−1mA
25−−
0.3−− mJ
−2.22.6pF
−1.21.8pF
100
handbook, halfpage
h
FE
80
60
40
20
0
0200400
VCE = 12.5 V
10 V
MRA237
IC (mA)
600
Fig.3DC current gain as a function of collector
current; typical values.
September 19914
C
(pF)
5
c
4
3
2
1
0
0
510
V
CB
handbook, halfpage
Fig.4Collector capacitance as a function of
collector-base voltage, typical values.
MRA234
(V)
15
Page 5
Philips SemiconductorsProduct specification
UHF power transistorBLU86
APPLICATION INFORMATION
RF performance at T
≤ 60 °C; in a common emitter class-B test circuit (see note 1).
s
MODE OF OPERATION
f
(MHz)
V
(V)
CE
P
(W)
L
c.w. narrow band90012.51> 7
Note
= temperature at soldering point of collector tab.
1. T
s
10
handbook, halfpage
G
P
(dB)
8
6
4
2
MRA235
100
η
c
G
P
η
c
(%)
80
60
40
20
handbook, halfpage
P
(W)
1.5
0.5
2
L
1
(dB)
typ. 7.7
G
p
η
c
(%)
> 55
typ. 66
MRA240
0
00.40.81.2
Class-B operation; VCE= 12.5V;f = 900 MHz.
PL (W)
1.6
Fig.5Gain and efficiency as functions of load
power, typical values.
0
0
Class-B operation; VCE= 12.5 V;f = 900 MHz.
1003005000200
400
PIN (mW)
Fig.6Load power as a function of drive power,
typical values.
Ruggedness in class-B operation
The BLU86 is capable of withstanding a full load mismatch
corresponding to VSWR = 50:1 through all phases at rated
output power, up to a supply voltage of 15.5 V,
f = 900 MHz and Ts≤ 60 °C, where Tsis the temperature
at the soldering point of the collector tab.
(note 1)
C963 V electrolytic capacitor2.2 µF
L1stripline (note 2)50 Ω17 mm × 4.7 mm
L2stripline (note 2)50 Ω5 mm × 4.7 mm
L3stripline (note 2)50 Ω32 mm × 4.7 mm
L4stripline (note 2)50 Ω20 mm × 4.7 mm
L5, L76 turns enamelled 0.8 mm copper wireint. dia. 3 mm
L6, L8grade 3B1 Ferroxcube wideband HF choke4312 020 36640
R1, R20.25 W metal film resistor10 Ω, 5%
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are mounted on a double copper-clad printed circuit board, with PTFE fiber-glass dielectric (εr= 2.2);
thickness1⁄16inch.
September 19916
Page 7
Philips SemiconductorsProduct specification
UHF power transistorBLU86
handbook, full pagewidth
strap
strap
140 mm
strap
80 mm
rivets
(14x)
mounting
screws
(8x)
V
CC
L6
L8
C9
strap
C7
R1
L5
C1
The circuit and components are situated on one side of a copper-clad PTFE fibre-glass board; the other side is
unetched and serves as a ground plane. Earth connections from the component side to the ground plane are
made by means of fixing screws, hollow rivets and copper foil straps, as shown.
L1
L2
C3C2
L3
R2
L7
Fig.8 Component layout for 900 MHz class-B test circuit.
September 19917
C4
C8
L4
C6
C5
MBC089
Page 8
Philips SemiconductorsProduct specification
UHF power transistorBLU86
14
handbook, halfpage
Z
i
(Ω)
12
10
8
6
4
2
0
Class-B operation; VCE= 12.5 V; PL=1W.
840
r
i
x
i
9201000800880960
MRA238
f (MHz)
Fig.9Input impedance (series components) as a
function of frequency, typical values.
50
handbook, halfpage
Z
L
(Ω)
40
30
20
10
0
Class-B operation; VCE= 12.5 V; PL=1W.
R
L
X
L
8409201000800880
MRA239
960
f (MHz)
Fig.10 Load impedance (series components) as a
function of frequency, typical values.
handbook, halfpage
Z
i
Z
L
Fig.11 Definition of transistor impedance.
MBA451
12
handbook, halfpage
G
P
(dB)
10
8
6
4
2
0
Class-B operation; VCE= 12.5 V; PL=1W.
920
960
Fig.12 Power gain as a function of frequency,
typical values.
MRA236
f MHz
1000800840880
September 19918
Page 9
Philips SemiconductorsProduct specification
UHF power transistorBLU86
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leadsSOT223
D
c
y
b
1
4
132
e
1
b
p
e
w M
B
E
H
E
A
1
detail X
AB
L
X
v M
A
Q
A
p
024 mm
scale
DIMENSIONS (mm are the original dimensions)
UNITA1b
mm
A
1.8
1.5
OUTLINE
VERSION
SOT223
0.10
0.01
cD
b
p
1
0.80
3.1
0.32
0.60
2.9
IEC JEDEC EIAJ
0.22
6.7
6.3
e
E
3.7
4.6
3.3
REFERENCES
e1HELpQywv
2.3
September 19919
7.3
6.7
1.1
0.7
0.95
0.85
0.10.10.2
EUROPEAN
PROJECTION
ISSUE DATE
96-11-11
97-02-28
Page 10
Philips SemiconductorsProduct specification
UHF power transistorBLU86
DEFINITIONS
Data Sheet Status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 199110
Loading...
+ hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.