Datasheet BLU86 Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLU86
UHF power transistor
Product specification
September 1991
Page 2
Philips Semiconductors Product specification

FEATURES

SMD encapsulation
Emitter-ballasting resistors for
optimum temperature profile
Gold metallization ensures excellent reliability.

DESCRIPTION

NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in mobile radio equipment in the 900 MHz communications band.

PINNING - SOT223

PIN DESCRIPTION
1 emitter 2 base 3 emitter 4 collector

QUICK REFERENCE DATA

RF performance at T
60 °C in a common emitter class-B test circuit (see
s
note 1).
MODE OF OPERATION
f
(MHz)
V
(V)
CE
P
(W)
L
G
(dB)
p
(%)
c.w. narrow band 900 12.5 1 > 7 > 55
Note
1. T
= temperature at soldering point of collector tab.
s

PIN CONFIGURATION

alfpage
123
Top view
4
MSB002 - 1
handbook, halfpage
MBB012
c
b
e
η
c
Fig.1 Simplified outline and symbol.
September 1991 2
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Philips Semiconductors Product specification

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
, I
C
C(AV)
I
CM
P
tot
T
stg
T
j
Note
= temperature at soldering point of collector tab.
1. T
s
collector-base voltage open emitter 32 V collector-emitter voltage open base 16 V emitter-base voltage open collector 3V collector current DC or average value 200 mA collector current peak value;
600 mA
f > 1 MHz
total power dissipation f > 1 MHz;
2W Ts= 129 °C (note 1)
storage temperature range 65 150 °C operating junction temperature 175 °C
3
10
handbook, halfpage
I
C
(mA)
2
10
10
1
10
Ts = 129 oC
VCE (V)
MRA241
2
10
Fig.2 DC SOAR.

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-s(DC)
from junction to soldering point P
=2W;
tot
23 K/W
Ts= 129 °C
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Philips Semiconductors Product specification

CHARACTERISTICS

T
= 25 °C.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
E
SBR
C
C
C
re
collector-base breakdown voltage open emitter;
IC= 2.5 mA
collector-emitter breadown voltage open base;
IC=10mA
emitter-base breakdown voltage open collector;
IE= 0.5 mA
collector-emitter leakage current VBE=0;
VCE=16V
DC current gain VCE=10V;
IC= 150 mA
second breakdown energy L = 25 mH;
RBE=10Ω; f = 50 Hz
collector capacitance VCB= 12.5 V;
IE=Ie=0; f = 1 MHz
feedback capacitance VCE= 12.5 V;
IC=0; f = 1 MHz
32 −− V
16 −− V
3 −− V
−−1mA
25 −−
0.3 −− mJ
2.2 2.6 pF
1.2 1.8 pF
100
handbook, halfpage
h
FE
80
60
40
20
0
0 200 400
VCE = 12.5 V
10 V
MRA237
IC (mA)
600
Fig.3 DC current gain as a function of collector
current; typical values.
September 1991 4
C
(pF)
5
c
4
3
2
1
0
0
510
V
CB
handbook, halfpage
Fig.4 Collector capacitance as a function of
collector-base voltage, typical values.
MRA234
(V)
15
Page 5
Philips Semiconductors Product specification

APPLICATION INFORMATION

RF performance at T
60 °C; in a common emitter class-B test circuit (see note 1).
s
MODE OF OPERATION
f
(MHz)
V
(V)
CE
P
(W)
L
c.w. narrow band 900 12.5 1 > 7
Note
= temperature at soldering point of collector tab.
1. T
s
10
handbook, halfpage
G
P
(dB)
8
6
4
2
MRA235
100
η
c
G
P
η
c
(%)
80
60
40
20
handbook, halfpage
P
(W)
1.5
0.5
2
L
1
(dB)
typ. 7.7
G
p
η
c
(%)
> 55 typ. 66
MRA240
0
0 0.4 0.8 1.2
Class-B operation; VCE= 12.5V;f = 900 MHz.
PL (W)
1.6
Fig.5 Gain and efficiency as functions of load
power, typical values.
0
0
Class-B operation; VCE= 12.5 V;f = 900 MHz.
100 300 5000 200
400
PIN (mW)
Fig.6 Load power as a function of drive power,
typical values.

Ruggedness in class-B operation

The BLU86 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases at rated output power, up to a supply voltage of 15.5 V, f = 900 MHz and Ts≤ 60 °C, where Tsis the temperature at the soldering point of the collector tab.
September 1991 5
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Philips Semiconductors Product specification
handbook, full pagewidth
50 input
C1
R1
C2
L1
L2
L5
L6
TUT
C3
L3
C4
L7
L8
R2
C7
C6
L4
C5
C8
C9
50 output
+V
CC
MBC090
Fig.7 Class-B test circuit at f = 900 MHz.
List of components (see test circuit)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C6 multilayer ceramic chip capacitor
100 pF
(note 1) C2, C3, C4, C5 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09001 C7 multilayer ceramic chip capacitor
220 pF
(note 1) C8 multilayer ceramic chip capacitor
1nF
(note 1) C9 63 V electrolytic capacitor 2.2 µF L1 stripline (note 2) 50 17 mm × 4.7 mm L2 stripline (note 2) 50 5 mm × 4.7 mm L3 stripline (note 2) 50 32 mm × 4.7 mm L4 stripline (note 2) 50 20 mm × 4.7 mm L5, L7 6 turns enamelled 0.8 mm copper wire int. dia. 3 mm L6, L8 grade 3B1 Ferroxcube wideband HF choke 4312 020 36640 R1, R2 0.25 W metal film resistor 10 , 5%
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are mounted on a double copper-clad printed circuit board, with PTFE fiber-glass dielectric (εr= 2.2); thickness1⁄16inch.
September 1991 6
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Philips Semiconductors Product specification
handbook, full pagewidth
strap
strap
140 mm
strap
80 mm
rivets (14x)
mounting
screws
(8x)
V
CC
L6
L8
C9
strap
C7
R1
L5
C1
The circuit and components are situated on one side of a copper-clad PTFE fibre-glass board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by means of fixing screws, hollow rivets and copper foil straps, as shown.
L1
L2
C3C2
L3
R2
L7
Fig.8 Component layout for 900 MHz class-B test circuit.
September 1991 7
C4
C8
L4
C6
C5
MBC089
Page 8
Philips Semiconductors Product specification
14
handbook, halfpage
Z
i
()
12
10
8
6
4
2
0
Class-B operation; VCE= 12.5 V; PL=1W.
840
r
i
x
i
920 1000800 880 960
MRA238
f (MHz)
Fig.9 Input impedance (series components) as a
function of frequency, typical values.
50
handbook, halfpage
Z
L
()
40
30
20
10
0
Class-B operation; VCE= 12.5 V; PL=1W.
R
L
X
L
840 920 1000800 880
MRA239
960
f (MHz)
Fig.10 Load impedance (series components) as a
function of frequency, typical values.
handbook, halfpage
Z
i
Z
L
Fig.11 Definition of transistor impedance.
MBA451
12
handbook, halfpage
G
P
(dB)
10
8
6
4
2
0
Class-B operation; VCE= 12.5 V; PL=1W.
920
960
Fig.12 Power gain as a function of frequency,
typical values.
MRA236
f MHz
1000800 840 880
September 1991 8
Page 9
Philips Semiconductors Product specification

PACKAGE OUTLINE

Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223
D
c
y
b
1
4
132
e
1
b
p
e
w M
B
E
H
E
A
1
detail X
AB
L
X
v M
A
Q
A
p
0 2 4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A1b
mm
A
1.8
1.5
OUTLINE
VERSION

SOT223

0.10
0.01
cD
b
p
1
0.80
3.1
0.32
0.60
2.9
IEC JEDEC EIAJ
0.22
6.7
6.3
e
E
3.7
4.6
3.3
REFERENCES
e1HELpQywv
2.3
September 1991 9
7.3
6.7
1.1
0.7
0.95
0.85
0.1 0.10.2
EUROPEAN
PROJECTION
ISSUE DATE
96-11-11 97-02-28
Page 10
Philips Semiconductors Product specification

DEFINITIONS

Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1991 10
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