Datasheet BLU30-12 Datasheet (Philips)

DATA SH EET

Product specification

January 1985

DISCRETE SEMICONDUCTORS

BLU30/12

UHF power transistor

January 1985 2

Philips Semiconductors Product specification

UHF power transistor BLU30/12

DESCRIPTION

N-P-N silicon planar epitaxial
transistor primarily intended for use in
mobile radio transmitters in the
470 MHz communications band.

FEATURES:

• multi-base structure and
emitter-ballasting resistors for an
optimum temperature profile

• gold metallization ensures
excellent reliability

• internal matching to achieve an
optimum wideband capability and
high power gain

The transistor has a 6-lead flange
envelope with a ceramic cap
(SOT-119). All leads are isolated from
the flange.

QUICK REFERENCE DATA

Envelope SOT-119
Mode of operation class-B; c.w.
Collector-emitter voltage (d.c.) V

CE

12,5 V
Frequency f 470 MHz
Load power P

L

30 W

Power gain G

P

> 6,0 dB

Collector efficiency η

C

> 55 %

Heatsink temperature T

h

25 °C

PIN CONFIGURATION

Fig.1 Simplified outline, SOT119A.

handbook, halfpage

2

4

65

3

1

MSB006

PINNING

PIN DESCRIPTION

1 emitter
2 emitter
3 base
4 collector
5 emitter
6 emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

January 1985 3

Philips Semiconductors Product specification

UHF power transistor BLU30/12

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-base voltage (open emitter)

peak value V

CBOM

max. 36 V

Collector-emitter voltage (open base) V

CEO

max. 16,5 V

Emitter-base voltage (open collector) V

EBO

max. 4 V

Collector current

d.c. or average I

C

max. 6 A

(peak value); f > 1 MHz I

CM

max. 18 A

Total power dissipation

f > 1 MHz; T

mb

= 25 °CP

tot

(r.f.) max. 65 W

Storage temperature T

stg

−65 to + 150 °C

Operating junction temperature T

j

max. 200 °C

Fig.2 D.C. SOAR. R

th mb-h

= 0,2 K/W

handbook, halfpage

10

1

10

−1

MDA324

110

V

CE

(V)

I

C

(A)

10

2

Th = 70 °C

Tmb = 25 °C

Fig.3 Power/temperature derating curves

I Continuous operation (f > 1 MHz)
II Short-time operation during mismatch; (f > 1 MHz.

handbook, halfpage

04080

P

tot

(W)

Th (°C)

160

100

0

80

120

60

40

20

MDA325

II

I

THERMAL RESISTANCE

(dissipation = 45 W; T

mb

=25°C)

From junction to mounting base

(r.f. dissipation) R

th j-mb(r.f.)

max. 2,45 K/W

From mounting base to heatsink R

th mb-h

max. 0,2 K/W

January 1985 4

Philips Semiconductors Product specification

UHF power transistor BLU30/12

CHARACTERISTICS

T

j

=25°C unless otherwise specified

Note

1. Device mounted in SOT-119 envelope without inputmatching.

Collector-base breakdown voltage

I

C

= 50 mA; open emitter V

(BR)CBO

> 36 V

Collector-emitter breakdown voltage

IC = 100 mA; open base V

(BR)CEO

> 16,5 V

Emitter-base breakdown voltage

IE= 10 mA; open collector V

(BR)EBO

> 4V

Collector cut-off current

VBE= 0; VCE=16V I

CES

< 22 mA

Second breakdown energy

L = 25 mH; f = 50 Hz; R

BE

=10Ω E

SBR

> 8mJ

D.C. current gain

I

C

= 4 A; VCE=10V h

FE

> 15

typ. 60

Collector capacitance at f = 1 MHz

(1)

IE= ie=0;VCB= 12,5 V C

c

typ. 85 pF

Feed-back capacitance at f = 1 MHz

(1)

IC= 0; VCE= 12,5 V C

re

typ. 52 pF

Collector-flange capacitance C

cf

typ. 3 pF

Fig.4 Tj=25°C; typ. values.

handbook, halfpage

048

I

C

(A)

h

FE

16

80

60

20

0

40

12

MDA326

V

CE

= 12.5 V

10 V

Fig.5 IE= ie= 0; f = 1 MHz; typ. values.

handbook, halfpage

020

250

50

90

130

170

210

4812

C

c

(pF)

VCB (V)

16

MDA327

January 1985 5

Philips Semiconductors Product specification

UHF power transistor BLU30/12

APPLICATION INFORMATION

List of components:

Mode of operation In narrow-band test circuit; class-B; c.w.
Collector-emitter voltage (d.c.) V

CE

12,5 V
Frequency f 470 MHz
Load power P

L

30 W

Power gain G

p

> 6,0 dB
typ. 7,4 dB

Collector efficiency η

C

> 55 %
typ. 66 %

Heatsink temperature T

h

25 °C

C1 = C2 = C7 = C8 = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002)
C3 = C6 = 3,9 pF ceramic capacitor (500 V)
C4 = 100 pF feed-through capacitor
C5 = 100 nF polyester film capacitor
L1 = stripline (24,0 mm × 6,7 mm)
L2 = 10 turns closely wound enamelled Cu-wire (0,4 mm); int. diam. 4 mm
L3 = 2 turns enamelled Cu-wire (0,6 mm); Ferroxcube tube core, grade 3B5 (cat. no. 4313 020 15170)
L4 = 12,6 nH; 2,5 turns enamelled Cu-wire (0,7 mm); int. diam. 4 mm; length 3 mm; leads 2 × 5 mm
L5 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642)
L6 = stripline (28,4 mm × 6,7 mm)
R1 = R2 = 10 Ω carbon resistor
L1 and L6 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (ε

r

= 2,74);

thickness1⁄16inch.
Component lay-out and printed-circuit board for 470 MHz test circuit are shown in Figs 7 and 8.

Fig.6 Class-B test circuit at f = 470 MHz.

handbook, full pagewidth

MDA328

C6

L4

L6

C4

C1

C7

C8

C2

+V

CC

C3

L1

L2

R1 L3

T.U.T.

L5

R2

C5

50 Ω

50 Ω

January 1985 6

Philips Semiconductors Product specification

UHF power transistor BLU30/12

handbook, full pagewidth

104 mm

56.5 mm

MDA329

(1)

(1)

(1)

(1)

(1)

01565 MJK
UHF PWR AMP

01565 MJK
UHF PWR AMP

+V

CC

C5

C8

C6

C7C2

C3

C1

R1 L3

L2

L1

double Cu-clad printed-circuit board
Cu strap (thick 0.3 mm; wide 5.0 mm)

C4

L4

L6

R2

L5

Fig.7 P.c. board for 470 MHz, class-B test circuit.

Fig.8 Component lay-out of 470 MHz, class-B test circuit.

The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side fully metallized serving
as groundplane. Earth connections are made by hollow rivets and also by copper straps under the emitter to provide a
direct contact between the copper on the component side and the ground plane.

January 1985 7

Philips Semiconductors Product specification

UHF power transistor BLU30/12

Fig.9 Load power vs. source power.

VCE= 12,5V; f = 470 MHz; class-B operation;
T

h

=25°C and 70 °C; R

th mb-h

= 0,2 K/W; typical values.

handbook, halfpage

020

50

0

10

20

30

40

4812

P

L

(W)

16

MDA330

PS (W)

70 °C

Th = 25 °C

Fig.10 Power and gain and efficiency vs. load power.

 Th = 25 °C;

− − − Th=70°C.

VCE= 12,5 V; f = 470 MHz; class-B operation;
T

h

=25°C and 70 °C; R

th mb-h

= 0,2 K/W; typical values.

handbook, halfpage

050

10

0

2

4

6

8

10 20 30

G

p

(dB)

G

p

40

MDA331

PL (W)

50

75

100

125

150

25

η

C

(%)

η

C

RUGGEDNESS

The device is capable of withstanding a full load mismatch
(VSWR = 50; all phases) up to 38 W under the following
conditions:
VCE= 15,5 V; f = 470 MHz; Th=25°C; R

th mb-h

= 0,2 K/W.

January 1985 8

Philips Semiconductors Product specification

UHF power transistor BLU30/12

Fig.11 Input impedance (series components).

VCE= 12,5 V; PL= 30 W; f = 400−512 MHz; Th=25°C;
class-B operation; R

th mb-h

= 0,2 K/W; typical values.

handbook, halfpage

400

3

2

1

0

430

x

i

r

i

f (MHz)

Z

i

(Ω)

460 520

490

MDA332

Fig.12 Load impedance (series components).

handbook, halfpage

400

3

1

−1

−3

−2

0

2

430

X

L

R

L

f (MHz)

Z

L

(Ω)

460 520

490

MDA333

VCE= 12,5 V; PL= 30 W; f = 400−512 MHz; Th=25°C;
class-B operation; R

th mb-h

= 0,2 K/W; typical values.

Fig.13 Power gain versus frequency.

handbook, halfpage

400 430 460

G

p

(dB)

f (MHz)

520

10

0

8

490

6

4

2

MDA334

VCE= 12,5 V; PL= 30 W; f = 400−512 MHz; Th=25°C;
class-B operation; R

th mb-h

= 0,2 K/W; typical values.

January 1985 9

Philips Semiconductors Product specification

UHF power transistor BLU30/12

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

SOT119A 97-06-28

0 5 10 mm

scale

Flanged ceramic package; 2 mounting holes; 6 leads SOT119A

U

2

H

A

F

A

b

M

w

3

b

1

b

2

p

w

1

AB

M

D

1DU3

Q

c

q

U

1

C

B

1

2

3

4

5

6

e

M

C

w

2

H

1

UNIT

A

mm

Db

5.59

5.33

0.18

0.07

12.86

12.59

6.48

22.10

21.08

6.48

6.07

12.76

12.06

7.39

6.32

c

eU

2

0.5118.42

qw

1

0.261.02

w

3

w

2

U

3

H

1

18.55

18.28

U

1

25.23

23.95

4.07

3.81

b

2

b

1

5.34

5.08

p

3.31

2.97

Q

4.58

3.98

FH

12.83

12.57

D

1

2.54

2.28

inches

0.220

0.210

0.007

0.003

0.505

0.496

0.255

0.870

0.830

0.255

0.239

0.502

0.475

0.291

0.249

0.020.725 0.010.04

0.730

0.720

0.993

0.943

0.160

0.150

0.210

0.200

0.130

0.117

0.180

0.157

0.505

0.495

0.100

0.090

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

January 1985 10

Philips Semiconductors Product specification

UHF power transistor BLU30/12

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.