Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D175
BLT52
UHF power transistor
Product specification
Supersedes data of 1997 Oct 15
1998 Jan 28
Page 2
Philips Semiconductors Product specification
UHF power transistor BLT52
FEATURES
• Emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Common emitter class-B operation in portable radio
transmitters in the 470 MHz communication band.
DESCRIPTION
NPN silicon planar epitaxial power transistor encapsulated
in a ceramic SOT409A SMD package.
QUICK REFERENCE DATA
RF performance at T
≤ 60 °C in a common emitter test circuit.
mb
PINNING
PIN DESCRIPTION
1, 4, 5, 8 emitter
2, 3 base
6, 7 collector
handbook, halfpage
Fig.1 Simplified outline SOT409A.
85
14
Top view
MBK150
MODE OF OPERATION
f
(MHz)
CW, class-B 470
V
(V)
CE
P
(W)
L
7.5 7
63
G
(dB)
p
η
(%)
C
≥8 ≥50
typ. 9.5 typ. 65
≥8≥50
typ. 9.5 typ. 55
1998 Jan 28 2
Page 3
Philips Semiconductors Product specification
UHF power transistor BLT52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 3V
collector current (DC) − 2.5 A
total power dissipation Tmb≤ 60 °C − 13 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C
thermal resistance from junction to mounting base P
= 13 W; Tmb≤ 60 °C 8 K/W
tot
10
handbook, halfpage
I
C
(A)
1
−1
10
11010
Tmb=60°C.
Fig.2 DC SOAR.
MGM485
V
(V)
CE
2
1998 Jan 28 3
Page 4
Philips Semiconductors Product specification
UHF power transistor BLT52
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
collector-base breakdown voltage open emitter; IC=20mA 20 −−V
collector-emitter breakdown voltage open base; IC=40mA 10 −−V
emitter-base breakdown voltage open collector; IE=4mA 3 −−V
collector leakage current VBE= 0; VCE= 7.5 V −−1mA
DC current gain IC= 1.2 A; VCE=5V 25 −−
collector capacitance IE=ie= 0; VCB= 7.5 V; f = 1 MHz − 24 − pF
feedback capacitance IC= 0; VCE= 7.5 V; f = 1 MHz − 17 − pF
100
handbook, halfpage
h
FE
80
60
40
20
0
VCE= 5V; Tj=25°C.
Measured under pulse conditions: tp≤ 300 µs; δ≤0.001.
0.4 0.8 1.2 1.6
0 2.0
MGM486
IC (mA)
Fig.3 DC current gain as a function of collector
current; typical values.
50
handbook, halfpage
C
c
(pF)
40
30
20
10
0
020
IE=ie= 0; f = 1 MHz; Tj=25°C.
4 8 12 16
Fig.4 Collector capacitance as a function of
collector-base voltage; typical values.
MGM487
V
CB
(V)
1998 Jan 28 4
Page 5
Philips Semiconductors Product specification
UHF power transistor BLT52
APPLICATION INFORMATION
RF performance at T
≤ 60 °C in a common emitter test circuit.
mb
MODE OF OPERATION
f
(MHz)
CW, class-B 470
V
(V)
CE
P
(W)
L
7.5 7
63
G
(dB)
p
η
(%)
C
≥8 ≥50
typ. 9.5 typ. 65
≥8≥50
typ. 9.5 typ. 55
Ruggedness in class-B operation
The BLT52 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: CW, class-B operation; f = 470 MHz; V
MBK250
10
handbook, halfpage
G
p
(dB)
8
6
4
G
p
η
C
100
η
(%)
80
60
40
C
= 9 V and PL= 7 W; Tmb≤ 60 °C.
CE
10
handbook, halfpage
P
L
(W)
8
6
4
MGD257
2
0
02
CW, class-B operation; f = 470 MHz; VCE=6V;
tuned at P
= 3 W; Tmb≤ 60 °C.
L
486
PL (W)
Fig.5 Power gain and collector efficiency as
functions of load power; typical values.
20
0
2
0
0123
CW, class-B operation; f = 470 MHz; VCE=6V;
tuned at P
= 3 W; Tmb≤ 60 °C.
L
PIN (W)
Fig.6 Load power as a function of input power;
typical values.
1998 Jan 28 5
Page 6
Philips Semiconductors Product specification
UHF power transistor BLT52
12
handbook, halfpage
G
p
(dB)
10
6
4
2
0
02
CW, class-B operation; f = 470 MHz; VCE= 7.5 V;
tuned at P
= 7 W; Tmb≤ 60 °C.
L
G
p
η
C
41086
Fig.7 Power gain and collector efficiency as
functions of load power; typical values.
MBK251
PL (W)
80
70
608
50
40
30
20
η
(%)
10
C
handbook, halfpage
P
L
(W)
8
6
4
2
0
0 0.5 1.0 1.5 2.0
CW, class-B operation; f = 470 MHz; VCE= 7.5 V;
tuned at P
= 7 W; Tmb≤ 60 °C.
L
MGD259
PIN (W)
Fig.8 Load power as a function of input power;
typical values.
20
handbook, halfpage
G
p
(dB)
16
12
8
4
0
100 150
CW, class-B operation; VCE= 7.5 V; PL= 7 W; Tmb≤ 60 °C.
200 300250
MBK252
f (MHz)
Fig.9 Power gain as a function of frequency;
typical values.
1998 Jan 28 6
16
handbook, halfpage
G
p
(dB)
12
8
4
0
400 420
CW, class-B operation; VCE= 7.5 V; PL= 7 W; Tmb≤ 60 °C.
440 480460
f (MHz)
Fig.10 Power gain as a function of frequency;
typical values.
MBK253
Page 7
Philips Semiconductors Product specification
UHF power transistor BLT52
handbook, halfpage
4
Z
i
(Ω)
2
0
−2
−4
−6
100 150
CW, class-B operation; VCE= 7.5 V; PL= 7 W; Tmb≤ 60 °C.
r
i
x
i
200 300250
MBK254
f (MHz)
Fig.11 Input impedance as a function of frequency
(series components); typical values.
handbook, halfpage
6
Z
L
(Ω)
R
4
2
0
−2
100 150
CW, class-B operation; VCE= 7.5 V; PL= 7 W; Tmb≤ 60 °C.
L
X
L
200 300250
MBK255
f (MHz)
Fig.12 Load impedance as a function of frequency
(series components); typical values.
1.2
handbook, halfpage
Z
i
(Ω)
0.8
0.4
0
CW, class-B operation; VCE= 7.5 V; PL= 7 W; Tmb≤ 60 °C.
420400 440 460 480
r
i
x
i
MGD260
f (MHz)
Fig.13 Input impedance as a function of frequency
(series components); typical values.
R
L
X
L
f (MHz)
MGD261
handbook, halfpage
4
Z
L
(Ω)
3
2
1
0
CW, class-B operation; VCE= 7.5 V; PL= 7 W; Tmb≤ 60 °C.
420400 440 460 480
Fig.14 Load impedance as a function of frequency
(series components); typical values.
1998 Jan 28 7
Page 8
Philips Semiconductors Product specification
f
UHF power transistor BLT52
MOUNTING RECOMMENDATIONS
Both the metallized groundplate and leads contribute to the heatflow. It is recommended that the transistor is mounted
on a grounded metallized area of a maximum thickness of 0.8 mm on the printed-circuit board, equipped with at least 12
(0.5 mm diameter) through metallized holes filled with solder.
A thermal resistance R
on the printed-circuit board.
of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted
th(mb-h)
ull pagewidth
3.607.38
1.87 (2×)
4.60
0.60 (4×)
0.80 (2×)
0.50 (12×)
1.00 (8×)
1.00 (9×)
MGK390
Dimensions in mm.
Fig.15 Reflow soldering footprint for SOT409A.
1998 Jan 28 8
Page 9
Philips Semiconductors Product specification
UHF power transistor BLT52
PACKAGE OUTLINE
Ceramic surface mounted package; 8 leads SOT409A
D
A
D
2
H
1
H
e
b
0 2.5 5 mm
B
w
B
2
E
2
A
w
1
scale
c
L
E
α
Q
1
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
mm
OUTLINE
VERSION
SOT409A
A
2.36
2.06
0.093
0.081
0.58
0.43
0.023
0.017
D
2
0.23
5.94
5.03
0.234
0.198
5.16
5.00
0.203
0.197
0.18
0.009
0.007
IEC JEDEC EIAJ
4.93
4.01
0.194
0.163
0.158
0.157
REFERENCES
E
2
4.14
1.27
3.99
0.050
e
0.294
0.286
UNIT cbDE
inches
1998 Jan 28 9
HH
1
4.39
7.47
4.24
7.26
0.173
0.167
LQ
1.02
0.10
0.51
0.00
0.040
0.004
0.020
0.000
1
0.25
0.010
PROJECTION
w
w
1
0.25
0.010
EUROPEAN
2
α
7°
0°
7°
0°
ISSUE DATE
97-06-28
Page 10
Philips Semiconductors Product specification
UHF power transistor BLT52
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jan 28 10
Page 11
Philips Semiconductors Product specification
UHF power transistor BLT52
NOTES
1998 Jan 28 11
Page 12
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© Philips Electronics N.V. 1998 SCA57
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Printed in The Netherlands 125108/00/03/pp12 Date of release: 1998 Jan28 Document order number: 9397 75003238
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