Datasheet BLT13 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLT13

UHF power transistor

Preliminary specification
File under Discrete Semiconductors, SC08b

1996 Apr 12

Philips Semiconductors Preliminary specification

Fig.1 Simplified outline and symbol.

handbook, halfpage

41

58

e

c

b

MAM227

QUICK REFERENCE DATA

RF performance at Ts≤ 60 °C in a common emitter test circuit.

MODE OF OPERATION

f

(MHz)

V

CE

(V)

P

L

(W)

G

p

(dB)

η

C

(%)

Pulsed, class-AB 1800 6 2 ≥6 ≥50

UHF power transistor BLT13

FEATURES

• High efficiency

• High gain

DESCRIPTION

NPN silicon planar epitaxial transistor encapsulated in a
plastic SOT96-1 (SO8) SMD package.

• Internal pre-matched input.

APPLICATIONS

• Hand-held radio equipment in common emitter class-AB
operation for 1.8 GHz Time Division Multiple Access
(TDMA) communication systems.

PINNING - SOT96-1

PIN SYMBOL DESCRIPTION

1, 8 b base

2, 4, 5, 7 e emitter

3, 6 c collector

1996 Apr 12 2

Philips Semiconductors Preliminary specification

UHF power transistor BLT13

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 1 A
total power dissipation Ts= 130 °C; note 1 − 1 W
storage temperature −65 +150 °C
operating junction temperature − 175 °C

thermal resistance from junction to
soldering point

P

= 1 W; Ts= 130 °C; note 1

tot

45 K/W

Note to the “Limiting values” and “Thermal characteristics”

1. T

is the temperature at the soldering point of the collector pin.

s

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CES

h

FE

C

c

C

re

collector-base breakdown voltage open emitter; IC= 5 mA 20 − V
collector-emitter breakdown voltage open base; IC= 10 mA 10 − V
emitter-base breakdown voltage open collector; IE= 1 mA 2.5 − V
collector leakage current VCE= 6 V; VBE= 0 − 0.1 mA
DC current gain VCE= 5 V; IC= 100 mA 30 150
collector capacitance VCB= 6 V; IE= ie= 0; f = 1 MHz − 8 pF
feedback capacitance VCE= 6 V; IC= 0; f = 1 MHz − 6 pF

1996 Apr 12 3

Philips Semiconductors Preliminary specification

Fig.2 Power gain and collector efficiency as

functions of load power; typical values.

Pulsed, class-AB; δ= 1 : 8; tp≤ 5 ms; f = 1800 MHz; VCE= 6 V;
I

CQ

= 2 mA; tuned at PL= 2 W; Ts≤ 60 °C.

handbook, halfpage

0 3

10

G

p

(dB)

0

2

MGD236

4

6

8

1 2

PL (W)

100

η

C

(%)

η

C

80

20

40

0

60

G

p

UHF power transistor BLT13

APPLICATION INFORMATION

RF performance at Ts≤ 60 °C in a common emitter test circuit (note 1).

MODE OF OPERATION

Pulsed, class-AB;

δ = 1 : 8; t

≤ 5 ms

p

f

(MHz)

1800 6 2 2

V

(V)

CE

I

CQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

C

≥6 ≥50

typ. 8.5 typ. 65

Note

is the temperature at the soldering point of the collector pin.

1. T

s

Ruggedness in class-AB operation

The BLT13 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the
following conditions: δ = 1 : 8; tp≤ 5 ms; f = 1800 MHz; VCE= 8.5 V; PL= 2 W; Ts≤ 60 °C.

1996 Apr 12 4

Philips Semiconductors Preliminary specification

Fig.3 SOT96-1.

Dimensions in mm.

handbook, full pagewidth

pin 1

index

0.7

0.3

0.49

0.36

1.27

0.25 M
(8x)

1

4

5

0.1 SS

5.0

4.8

4.0

3.8

6.2

5.8

A

8

MBC180 - 1

0.25

0.19

0.7

0.6

1.75

1.35

1.45

1.25

detail A

1.0

0.5

0.25

0.10

0 to 8

o

UHF power transistor BLT13

PACKAGE OUTLINE

1996 Apr 12 5

Philips Semiconductors Preliminary specification

UHF power transistor BLT13

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Apr 12 6

Philips Semiconductors Preliminary specification

UHF power transistor BLT13

NOTES

1996 Apr 12 7

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SCDS48 © Philips Electronics N.V. 1996

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127061/1200/02/pp8 Date of release: 1996 Apr 12
Document order number: 9397750 00791