Datasheet BLS3135-10 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D324

BLS3135-10

Microwave power transistor

Product specification 2000 Feb 01

Philips Semiconductors Product specification

Microwave power transistor BLS3135-10

FEATURES

• Suitable for short and medium pulse applications

• Internal inputand output matching networks for an easy

circuit design

• Emitter ballasting resistors improve ruggedness

• Gold metallization ensures excellent reliability

• Interdigitated emitter-base structure provides high

emitter efficiency

• Multicellgeometry improves power sharing andreduces
thermal resistance.

APPLICATIONS

• Common base class-C pulsed power amplifier for radar
applications in the 3.1 to 3.5 GHz range.

DESCRIPTION

NPN silicon planar epitaxial microwave powertransistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT445C) with the common base connected to the
flange.

PINNING - SOT445C

PIN DESCRIPTION

1 collector
2 emitter
3 base; connected to flange

handbook, halfpage

Top view

Fig.1 Simplified outline.

1

3

2

MBK132

QUICK REFERENCE DATA

RF performance at Th=25°C in a common base class-C test circuit.

MODE OF OPERATION

f

(GHz)

V

(V)

CB

P

(W)

L

G

(dB)

p

η

C

(%)

Pulsed class-C 3.1 to 3.5 40 ≥10 typ. 9 typ. 40

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

2000 Feb 01 2

Philips Semiconductors Product specification

Microwave power transistor BLS3135-10

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CES

V

EBO

I

CM

P

tot

T

stg

T

j

T

sld

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Z

th j-h

collector-base voltage open emitter − 75 V
collector-emitter voltage RBE=0 − 75 V
emitter-base voltage open collector − 2V
peak collector current tp≤ 100 µs; δ≤10% − 1.5 A
total power dissipation tp= 100 µs; δ = 10%; Th=25°C − 34 W
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature up to 0.2 mm from ceramic cap; t ≤ 10 s − 235 °C

thermal impedance from junction to heatsink tp= 100 µs; δ = 10%; note 1 5.2 K/W

= 200 µs; δ = 10%; note 1 5.8 K/W

t

p

t

= 300 µs; δ = 10%; note 1 6.3 K/W

p

Note

1. Equivalent thermal impedance under pulsed microwave operating conditions.

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

(BR)CBO

V

(BR)CES

I

CBO

I

CES

I

EBO

h

FE

collector-base breakdown voltage IC= 2.5 mA; open emitter 75 − V
collector-emitter breakdown voltage IC= 2.5 mA; VBE=0 75 − V
collector leakage current VCB=40V; IE=0 − 0.3 mA
collector leakage current VCE=40V; VBE=0 − 0.5 mA
emitter leakage current VEB= 1.5 V; IC=0 − 0.1 mA
DC current gain VCE=5V; IC= 0.25 A 40 −

APPLICATION INFORMATION

RF performance at T

MODE OF OPERATION

Class-C; t

= 100 µs; δ = 10% 3.1 to 3.5 40 ≥10 ≥7.5

p

=25°C in a common-base test circuit.

h

f

(GHz)

V

(V)

CE

P

(W)

L

G

p

(dB)

η

(%)

C

≥35

typ. 9

typ. 40

2000 Feb 01 3

Philips Semiconductors Product specification

Microwave power transistor BLS3135-10

12

handbook, halfpage

P

L

(W)

8

4

0

0

VCB= 40 V; class-C; tp= 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.

(1) (2) (3)

0.5 1.5

1

PD (W)

Fig.2 Load power as a function of drive power;

typical values.

MCD856

12

handbook, halfpage

G

p

(dB)

8

4

0

04 12

VCB= 40 V; class-C; tp= 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.

8

PL (W)

Fig.3 Power gain as a function of load power;

typical values.

MCD857

(1)
(2)

(3)

50

handbook, halfpage

η

C

(%)

40

30

20

10

0

04 12

VCB= 40 V; class-C; tp= 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.

8

PL (W)

Fig.4 Collector efficiency as a function of load

power; typical values.

MCD858

(3)

MCD859

12

handbook, halfpage

(2)
(1)

G

(dB)

VCB= 40 V; class-C; PL= 10 W; tp= 100 µs; δ = 10%.

G

p

p

8

return
losses

4

0

3 3.2 3.4 3.6

f (GHz)

24

return

losses

(dB)

16

8

0

Fig.5 Power gain and input return losses as

functions of frequency; typical values.

2000 Feb 01 4

Philips Semiconductors Product specification

Microwave power transistor BLS3135-10

handbook, halfpage

8

Z

i

(Ω)

4

0

−4

−8

3 3.2 3.4 3.6

VCB= 40 V; class-C; PL=10W.

r

i

x

i

MCD860

f (GHz)

Fig.6 Input impedance as a function of frequency

(series components); typical values.

12

handbook, halfpage

Z

(Ω)

VCB= 40 V; class-C; PL=10W.

R

L

L

X

L

8

4

0

3 3.2 3.4 3.6

MCD861

f (GHz)

Fig.7 Load impedance as a function of frequency

(series components); typical values.

2000 Feb 01 5

Philips Semiconductors Product specification

Microwave power transistor BLS3135-10

handbook, full pagewidth

30 30

40

C2

C1

MCD862

Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (εr= 2.2), thickness 0.38 mm.

The other side is unetched and serves as a ground plane.
C1 = 10 pF (ATC 100A); C2 = 100 pF (ATC 100A).

Fig.8 Component layout for 3.1 to 3.5 GHz class-C test circuit.

2000 Feb 01 6

Philips Semiconductors Product specification

Microwave power transistor BLS3135-10

PACKAGE OUTLINE

Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445C

D

A

F

3

D

1

D

2

H

U

2

A

DIMENSIONS (mm are the original dimensions)

mm

A

5.57

4.70

cD E

b

0.15

3.15

0.09

2.95

8.13

7.87

D

7.65

7.35

1

UNIT

D

8.15

7.85

U

1

q

1

2

w

E

4.25

3.95

M

C

2

scale

1

5.31

5.01

b

0 5 10 mm

E

2

4.20

3.93

B

C

p

2

w

M

AB

1

3.35

3.05

Q

3.33

3.03

FHp q

1.82

15.84

1.22

14.64

2

E1E

14.22

c

Q

U

1

20.47

20.17

U

5.18

4.98

E

w

0.51

w

1

2

1.02

2

OUTLINE

VERSION

SOT445C 97-05-23

IEC JEDEC EIAJ

REFERENCES

2000 Feb 01 7

EUROPEAN

PROJECTION

ISSUE DATE

Philips Semiconductors Product specification

Microwave power transistor BLS3135-10

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

2000 Feb 01 8

Philips Semiconductors Product specification

Microwave power transistor BLS3135-10

NOTES

2000 Feb 01 9

Philips Semiconductors Product specification

Microwave power transistor BLS3135-10

NOTES

2000 Feb 01 10

Philips Semiconductors Product specification

Microwave power transistor BLS3135-10

NOTES

2000 Feb 01 11

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Printed in The Netherlands 603516/01/pp12 Date of release: 2000 Feb 01 Document order number: 9397 750 06715