Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLS2731-50
Microwave power transistor
Product specification
Supersedes data of 1997 Nov 05
1998 Jan 30
Page 2
Philips Semiconductors Product specification
Microwave power transistor BLS2731-50
FEATURES
• Suitable for short and medium pulse applications
• Internal input and output matching networks for an easy
circuit design
• Emitter ballasting resistors improve ruggedness
• Gold metallization ensures excellent reliability
• Interdigitated emitter-base structure provides high
emitter efficiency
• Multicell geometry improves power sharing and reduces
thermal resistance.
APPLICATIONS
• Common base class-C pulsed power amplifiers for radar
applications in the 2.7 to 3.1 GHz band.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT422A) with the common base connected to the
flange.
PINNING - SOT422A
PIN DESCRIPTION
1 collector
2 emitter
3 base; connected to flange
handbook, halfpage
Fig.1 Simplified outline.
1
33
2
MBK051
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
=25°C in a common base class-C test circuit.
h
f
(GHz)
V
(V)
CB
P
(W)
L
G
p
(dB)
η
(%)
C
Pulsed, class-C 2.7 to 3.1 40 60 typ. 9 typ. 40
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1998 Jan 30 2
Page 3
Philips Semiconductors Product specification
Microwave power transistor BLS2731-50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
CM
P
tot
T
stg
T
j
T
sld
THERMAL CHARACTERISTICS
collector-base voltage open emitter − 75 V
collector-emitter voltage RBE=0 − 75 V
emitter-base voltage open collector − 2V
peak collector current tp≤ 100 µs; δ≤10% − 6A
total power dissipation tp= 100 µs; δ = 10%; Tmb=25°C − 80 W
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature up to 0.2 mm from ceramic cap;
− 235 °C
t ≤ 10 s
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Z
th j-h
thermal impedance from junction to heatsink tp= 100 µs; δ = 10%; note 1 0.3 K/W
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CES
I
CBO
I
CES
I
EBO
h
FE
C
c
collector-base breakdown voltage IC= 15 mA; open emitter 75 −−V
collector-emitter breakdown voltage IC= 15 mA; VBE=0 75 −−V
collector leakage current VCB= 40 V; IE=0 −−1.5 mA
collector leakage current VCE= 40 V; VBE=0 −−3mA
emitter leakage current VEB= 1.5 V; IC=0 −−0.3 mA
DC current gain VCB=5V; IC= 1.5 A 40 −−
collector capacitance (die only) VCE=1V; IE=ie=0;
− 30 − pF
f = 1 MHz
APPLICATION INFORMATION
RF performance at T
=25°C in a common-base test circuit.
h
MODE OF OPERATION
Class-C; t
= 100 µs; δ = 10% 2.7 to 3.1 40 ≥50
p
f
(GHz)
V
(V)
CE
1998 Jan 30 3
P
L
(W)
typ. 60
G
p
(dB)
≥8
typ. 9
η
C
(%)
≥35
typ. 40
Page 4
Philips Semiconductors Product specification
Microwave power transistor BLS2731-50
60
handbook, halfpage
P
L
(W)
40
20
0
010
VCB= 40V; class-C; tp= 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 2.7 GHz.
(3) f = 2.9 GHz.
2468
(2)
(1)
PD (W)
Fig.2 Load power as a function of drive power;
typical values.
MGM533
(3)
12
handbook, halfpage
G
p
(dB)
8
4
0
2.6
VCB= 40 V; class-C; PL= 50 W; tp= 100 µs; δ = 10%.
2.8 3 3.2
Fig.3 Power gain as function of frequency;
typical values.
MGM534
f (GHz)
x
f (GHz)
MGM535
i
r
i
16
handbook, halfpage
Z
i
(Ω)
12
8
4
0
2.6 2.8 3 3.2
VCB= 40 V; class-C; PL=50W.
Fig.4 Input impedance as function of frequency
(series components); typical values.
12
handbook, halfpage
Z
L
(Ω)
8
4
0
−4
−8
2.6 2.8 3 3.2
VCB= 40 V; class-C; PL=50W.
MGM536
R
X
f (GHz)
Fig.5 Load impedance as function of frequency
(series components); typical values.
L
L
1998 Jan 30 4
Page 5
Philips Semiconductors Product specification
Microwave power transistor BLS2731-50
handbook, full pagewidth
30 30
40
C1
C2
C3
C4
MGM537
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (εr= 2.2), thickness 0.38 mm.
The other side is unetched and serves as a ground plane.
C1 = ATC 200A 10 nF
C2 = ATC 100A 10 pF
C3 = ATC 700A 150 pF
C4 = Tekelec trimmer 37281SL 0.4 to 2.5 pF.
Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit.
1998 Jan 30 5
outputinput
Page 6
Philips Semiconductors Product specification
Microwave power transistor BLS2731-50
PACKAGE OUTLINE
Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT422A
D
A
F
D
3
1
U
1
q
1
H
U
2
A
2
b
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
mm
A
5.72
4.83
0.225
0.190
b
5.21
4.95
0.205
0.195
cD E
0.13
9.93
9.68
0.391
0.381
10.29
10.03
0.405
0.395
0.08
0.005
0.003
E
D
1
8.76
8.51
0.345
0.335
UNIT
inches
w
2
0 5 10 mm
FHp q
1
10.29
1.58
10.03
1.47
0.405
0.062
0.395
0.058
M
scale
C
21.61
21.08
0.89
0.83
C
3.43
3.18
0.135
0.125
B
c
p
w
M
AB
1
Q
3.35
16.51
2.92
0.132
0.65
0.115
U
1
22.99
22.73
0.905
0.895
E
1
Q
U
w
2
9.91
0.25
9.65
0.390
0.01 0.03
0.380
E
w
2
1
0.76
OUTLINE
VERSION
SOT422A 97-12-24
IEC JEDEC EIAJ
REFERENCES
EUROPEAN
PROJECTION
1998 Jan 30 6
ISSUE DATE
Page 7
Philips Semiconductors Product specification
Microwave power transistor BLS2731-50
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jan 30 7
Page 8
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Printed in The Netherlands 125108/00/03/pp8 Date of release: 1998 Jan30 Document order number: 9397 75003233
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