Datasheet BLS2731-10 Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1998 Mar 06

1998 Nov 25

DISCRETE SEMICONDUCTORS

BLS2731-10

Microwave power transistor

M3D324

1998 Nov 25 2

Philips Semiconductors Product specification

Microwave power transistor BLS2731-10

FEATURES

• Suitable for short and medium pulse applications

• Internal input and output matching networks for an easy

circuit design

• Emitter ballasting resistors improve ruggedness

• Gold metallization ensures excellent reliability

• Interdigitated emitter-base structure provides high

emitter efficiency

• Multicell geometry improves power sharing and reduces
thermal resistance.

APPLICATIONS

• Common base class-C pulsed power amplifier for radar
applications in the 2.7 to 3.1 GHz band.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT445C) with the common base connected to the
flange.

PINNING - SOT445C

PIN DESCRIPTION

1 collector
2 emitter
3 base; connected to flange

Fig.1 Simplified outline.

handbook, halfpage

MBK132

Top view

1

3

2

QUICK REFERENCE DATA

RF performance at T

h

=25°C in a common base class-C test circuit.

MODE OF OPERATION

f

(GHz)

V

CB

(V)

P

L

(W)

G

p

(dB)

η

C

(%)

Pulsed class-C 2.7 to 3.1 40 12.5 typ. 10 typ. 45

WARNING

Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1998 Nov 25 3

Philips Semiconductors Product specification

Microwave power transistor BLS2731-10

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note

1. Equivalent thermal impedance under pulsed microwave operating conditions.

CHARACTERISTICS

T

j

=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter − 75 V

V

CES

collector-emitter voltage RBE=0 − 75 V

V

EBO

emitter-base voltage open collector − 2V

I

CM

peak collector current tp≤ 100 µs; δ≤10% − 1.5 A

P

tot

total power dissipation tp= 100 µs; δ = 10%; Tmb=25°C − 145 W

T

stg

storage temperature −65 +200 °C

T

j

operating junction temperature − 200 °C

T

sld

soldering temperature up to 0.2 mm from ceramic cap; t ≤ 10 s − 235 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Z

th j-h

thermal impedance from junction to heatsink tp= 100 µs; δ = 10%; note 1 1.2 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

collector-base breakdown voltage IC= 2.5 mA; open emitter 75 −−V

V

(BR)CES

collector-emitter breakdown voltage IC= 2.5 mA; VBE=0 75 −−V

I

CBO

collector leakage current VCB= 40 V; IE=0 −−0.3 mA

I

CES

collector leakage current VCE= 40 V; VBE=0 −−0.5 mA

I

EBO

emitter leakage current VEB= 1.5 V; IC=0 −−0.1 mA

h

FE

DC current gain VCE=5V; IC= 0.25 A 40 −−

C

c

collector capacitance (die only) VCE=1V; IE=ie=0;

f = 1 MHz

− 10 − pF

1998 Nov 25 4

Philips Semiconductors Product specification

Microwave power transistor BLS2731-10

APPLICATION INFORMATION

RF performance at T

h

=25°C in a common-base test circuit.

MODE OF OPERATION

f

(GHz)

V

CE

(V)

P

L

(W)

G

p

(dB)

η

C

(%)

Class-C; t

p

= 100 µs; δ = 10% 2.7 to 3.1 40 ≥10

typ. 12.5

≥9

typ. 10

≥35

typ. 45

Fig.2 Power gain as a function of load power;

typical values.

VCB= 40V; class-C; tp= 100 µs; δ = 10%.
(1) f = 2.7 GHz.
(2) f = 2.9 GHz.
(3) f = 3.1 GHz.

handbook, halfpage

04812

16

12

G

p

(dB)

PL (W)

4

0

8

MDA227

(1)
(2)

(3)

VCB= 40 V; class-C; tp= 100 µs; δ = 10%.
(1) f = 2.7 GHz.
(2) f = 3.1 GHz.
(3) f = 2.9 GHz.

Fig.3 Collector efficiency as a function of load

power; typical values.

handbook, halfpage

0

(1)
(2)
(3)

η

C

(%)

60

40

PL (W)

20

0

4812

MDA228

1998 Nov 25 5

Philips Semiconductors Product specification

Microwave power transistor BLS2731-10

Fig.4 Power gain and efficiency as functions of

frequency; typical values.

VCB= 40 V; class-C; tp= 100 µs; δ = 10%.

handbook, halfpage

2.7

G

p

(dB)

G

p

η

C

(%)

η

C

2.8
f (GHz)

2.9 3.1

16

12

4

0

8

80

60

20

0

40

3

MDA229

VCB= 40 V; class-C; tp= 100 µs; δ = 10%.
(1) f = 2.7 GHz.
(2) f = 2.9 GHz.
(3) f = 3.1 GHz.

Fig.5 Load power as a function of drive power;

typical values.

handbook, halfpage

0

(1)

(2)

(3)

P

L

(W)

12

8

PD (W)

4

0

0.4 0.8 1.2

MDA230

Fig.6 Input impedance as function of frequency

(series components); typical values.

VCB= 40 V; class-C; PL=10W.

handbook, halfpage

2.6 2.8 3 3.2

20

0

16

Z

i

(Ω)

x

i

r

i

12

f (GHz)

8

4

MDA231

Fig.7 Load impedance as function of frequency

(series components); typical values.

VCB= 40 V; class-C; PL=10W.

handbook, halfpage

2.6 2.8 3 3.2

20

0

16

Z

L

(Ω)

12

f (GHz)

8

4

MDA232

X

L

R

L

1998 Nov 25 6

Philips Semiconductors Product specification

Microwave power transistor BLS2731-10

Fig.8 Component layout for 2.7 to 3.1 GHz class-C test circuit.

Dimensions in mm.
The components are located on one side of the copper-clad printed circuit board, the other side is unetched and serves as a ground plane.

Earth connections from the component side to the ground plane are made by through metallization.
The striplines are on double-clad printed-circuit board with Duroid dielectric (ε

r

= 2.2); thickness = 0.38 mm.

handbook, full pagewidth

40

30 30

MGR729

C5

C1

C2

C3

C4

input
50 Ω

output

50 Ω

1998 Nov 25 7

Philips Semiconductors Product specification

Microwave power transistor BLS2731-10

List of components

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. American Technical Ceramics type 200A or capacitor of same quality.

3. American Technical Ceramics type 700A or capacitor of same quality.

COMPONENT DESCRIPTION VALUE

C1 multilayer ceramic chip capacitor; note 1 0.7 nF
C2 multilayer ceramic chip capacitor; note 2 1 nF
C3 multilayer ceramic chip capacitor; note 1 10 pF
C4 multilayer ceramic chip capacitor; note 3 150 pF
C5 Tekelec trimmer type 37281SL 0.4 to 2.5 pF

1998 Nov 25 8

Philips Semiconductors Product specification

Microwave power transistor BLS2731-10

PACKAGE OUTLINE

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

SOT445C 97-05-23

0 5 10 mm

scale

Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445C

0.15

0.09

3.15

2.95

5.31

5.01

8.13

7.87

4.20

3.93

1.82

1.22

15.84

14.64

DIMENSIONS (mm are the original dimensions)

3.35

3.05

5.57

4.70

3.33

3.03

D

D

2

D

1

q

U

1

1

3

2

A

U

2

E1E

2

E

p

b

H

Q

F

c

UNIT

Q

cD E

2

4.25

3.95

E

1

7.65

7.35

D

1

8.15

7.85

D

2

E

FHp q

mm

b

14.22

20.47

20.17

U

2

U

1

5.18

4.98

0.51

w

1

1.02

w

2

A

M

C

C

A

w

1

w

2

AB

M

B

1998 Nov 25 9

Philips Semiconductors Product specification

Microwave power transistor BLS2731-10

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

1998 Nov 25 10

Philips Semiconductors Product specification

Microwave power transistor BLS2731-10

NOTES

1998 Nov 25 11

Philips Semiconductors Product specification

Microwave power transistor BLS2731-10

NOTES

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© Philips Electronics N.V. 1998 SCA60
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Printed in The Netherlands 125108/00/04/pp12 Date of release: 1998 Nov 25 Document order number: 9397 75004721