Datasheet BLF861 Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
M3D392
DATA SHEET
BLF861
UHF power LDMOS transistor
Preliminary specification 1999 Aug 26
Page 2
UHF power LDMOS transistor BLF861
FEATURES
High power gain
Easy power control
Excellent ruggedness
Source on underside eliminates DC isolators, reducing
common mode inductance
Designed for broadband operation (UHF band).
APPLICATIONS
Communication transmitter applications in the UHF frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in an SOT540A package with ceramic cap. The common source is connected to the mounting flange.
QUICK REFERENCE DATA
RF performance at T
=25°C in a common source test circuit.
h
PINNING - SOT540A
PIN DESCRIPTION
1drain 1 2drain 2 3gate 1 4gate 2 5 source, connected to flange
12
Top view
Fig.1 Simplified outline.
5
43
MBK777
MODE OF OPERATION
f
(MHz)
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
D
G (dB)
CW, class-AB 860 32 150 >14 >50 ≤1
PAL BG (TV), class-AB
860
(ch 69)
32
typ.170
(peak sync)
>14 >40 note 1
Notes
1. Sync compression: input sync: 33%; output sync: 27 %
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GS
I
D
P
tot
T
stg
T
j
drain-source voltage 65 V gate-source voltage −±15 V drain current (DC) 18 A total power dissipation Tmb≤ 25 °C 318 W storage temperature −65 +150 °C junction temperature 200 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
p
1999 Aug 26 2
Page 3
Philips Semiconductors Preliminary specification
Fig.2 Output capacitance as a function of drain-
source voltage; typical values per section.
VGS=0; f=1MHz; Tj=25°C.
UHF power LDMOS transistor BLF861
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
CHARACTERISTICS
T
=25°C; per section; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
is
C
os
C
rs
thermal resistance from junction to mounting base Tmb=25°C; P
= 318 W 0.55 K/W
tot
thermal resistance from mounting base to heatsink 0.2 K/W
drain-source breakdown voltage VGS=0; ID=1.5mA 65 −−V gate-source threshold voltage VDS=10V; ID= 150 mA 4 5V drain-source leakage current VGS=0; VDS=32V −−10 µA drain cut-off current VGS=V
+9V; VDS=10V 18 −−A
GSth
gate leakage current VGS= ±15 V; VDS=0 −−100 nA forward transconductance VDS=10V; ID=4A 4 S drain-source on-state resistance VGS=V
+9V; ID=4A 160 mΩ
GSth
input capacitance VGS=0; VDS=32V; f=1MHz 84 pF output capacitance VGS=0; VDS=32V; f=1MHz 42 pF feedback capacitance VGS=0; VDS=32V; f=1MHz 6 pF
200
C
OS
(pF)
160
120
80
40
0
0 1020304050
1999 Aug 26 3
V
(V)
DS
Page 4
Philips Semiconductors Preliminary specification
Fig.3 Input impedance as a function of frequency
(series components); typical values per section.
CW, class-AB operation; VDS=32V; IDQ=1.15A; P
L
= 170 W (total device) ; Th=25 °C.
UHF power LDMOS transistor BLF861
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
=25°C; R
h
= 0.15 K/W, unless otherwise specified.
th mb-h
MODE OF
OPERATION
f
(MHz)
V
(V)
DS
I
DQ
(A)
P
(W)
L
G
p
(dB)
η
(%)
D
d
IM
(dBc)
G
(dB)
p
CW, class-AB 860 32 1.15 150 >14 >50 −≤1
f
= 860
2-tone, class-AB
PAL BG (TV), class-AB
1
f
= 860.1
1
860
(ch 69)
32 1.15 150 (PEP) >14 >40 ≤−30
32 1.15
typ.170
(peak sync)
>14 >40 note 1
Notes
1. Sync compression: input sync: 33%; output sync: 27 %
measured in narrowband testcircuit.
Ruggedness in class-AB operation
The BLF861 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: V
= 32 V; f = 860 MHz at rated load power.
DS
12
Z
i
()
x
i
8
r
4
0
400 500 600 700 800 900
1999 Aug 26 4
i
f (MHz)
10
Z
L
()
8
6
4
2
0
-2
-4
-6 400 500 600 700 800 900
CW, class-AB operation; VDS=32V; IDQ=1.15A;
= 170 W (total device) ; Th=25 °C.
P
L
R
L
X
L
f (MHz)
Fig.4 Load impedance as a function of frequency
(series components); typical values per section.
Page 5
Philips Semiconductors Preliminary specification
Fig.5 Power gain and drain efficiency as functions
of peak envelope load power; typical values.
Th=25°C; VDS=32V; IDQ= 1.15 A; 2-tone: f
1
=860MHz (−6dB); f2=860.1MHz (−6dB)
measured in 860 MHz testcircuit.
Fig.7 Power gain and drain efficiency as functions
of load power; typical values.
Th=25°C; VDS= 32 V; ; IDQ= 1.15 A; CW, class-AB; f = 860 MHz; measured in 860 MHz testcircuit.
UHF power LDMOS transistor BLF861
16
G
(dB)
P
G
P
12
η
D
8
4
0
0 100 200 300
P
(PEP) (W)
L
80
60
40
20
0
η
(%)
0
d
D
(dB)
im
d
-20
3
d
5
-40
-60
-80
0 100 200 300
P
(PEP) (W)
L
Th=25°C; VDS=32V; IDQ= 1.15 A; 2-tone: f measured in 860 MHz testcircuit.
=860MHz (−6dB); f2=860.1MHz (−6dB)
1
Fig.6 Intermodulation distortion as a function of
peak envelope output power; typical values.
16
G
P
(dB)
G
P
12
η
D
8
4
0
0 50 100 150 200
1999 Aug 26 5
P
(W)
L
80
60
40
20
0
η
(%)
D
Page 6
Philips Semiconductors Preliminary specification
m
UHF power LDMOS transistor BLF861
+Vs
C16 R5
50 Ohm Input
C17
R2
+Vbias
C19 C18
R3
R4
C1
R6
L1
B1
L2
10mm
L3
L4
L5
L6
4mm
L7
C7C6C5C4C3C2
C9
R1
C8
L8
T1
4.5mm
L9
L19
C10
L10
L11
C11 C12 C13
L12
8mm
L13
L14
L15
C14
B2
L16
C20
C22
C26
C25
L18
C21
C23
L17
C24
R7
50 Oh Output
C15
Fig.8 Class-AB broadband testcircuit.
List of components
COMPONENT DESCRIPTION VALUE DIMENSIONS
C1 multilayer ceramic chip capacitor; note 1 20 pF C2 multilayer ceramic chip capacitor; note 1 4.3 pF C3, C6, C9 Tekelec trimmer 0.6 to 4.5 pF C4 multilayer ceramic chip capacitor; note 1 8.2 pF C5 multilayer ceramic chip capacitor; note 1 10 pF C7 multilayer ceramic chip capacitor; note 1 6.8 pF C8 multilayer ceramic chip capacitor; note 1 13 pF C10, C11 multilayer ceramic chip capacitor; note 2 8.2 pF C12 multilayer ceramic chip capacitor; note 2 3.3 pF C13 multilayer ceramic chip capacitor; note 2 6.8 pF C14 multilayer ceramic chip capacitor; note 2 1 pF C15 multilayer ceramic chip capacitor; note 2 30 pF C16, C17 multilayer ceramic chip capacitor 1 nF C18, C25 multilayer ceramic chip capacitor 100 nF C19, C26 multilayer ceramic chip capacitor 100 µF C20, C21, C22,
multilayer ceramic chip capacitor; note 3 100 pF
C23
CATALOGUE
No.
1999 Aug 26 6
Page 7
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF861
COMPONENT DESCRIPTION VALUE DIMENSIONS
C24 electrolytic capacitor 1000 µF L1, L2 stripline; note 4 30.6 x 2.4 mm L3, L4 stripline; note 4 28 x 2.4 mm L5, L6 stripline; note 4 10 x 5 mm L7, L8 stripline; note 4 20 x 10 mm L9, L10 stripline; note 4 5.5 x 15 mm L11, L12 stripline; note 4 10 x 10 mm L13, L14 stripline; note 4 15 x 5 mm L15, L16 stripline; note 4 48.5 x 2.4 mm L17 stripline; note 4 10 x 2.4 mm L18 ferrite L19 wire inductor (hairpin) height = 8 mm
length = 20 mm B1 semi rigid coax balun UT70-25 Z = 25 Ω±1.5 70 mm B2 semi rigid coax balun UT70-25 Z = 25 Ω±1.5 48.5 mm R1, R7 resistor 10 R2 resistor 1 k R3 resistor 100 k R4 resistor 100 R5, R6 SMD resistor 3.9
CATALOGUE
No.
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 180R or capacitor of same quality.
3. American Technical Ceramics type 100B or capacitor of same quality.
4. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (ε
= 2.2); thickness 0.79 mm.
r
1999 Aug 26 7
Page 8
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF861
80 mm
C16
C17
95 mm
C19
R2
R4
B1
R5
C1
R6
C2 C3
C18
C4
R3
BLF861
C5
C6
C7
C8
R1
C9
C10
L19
C11
C12
C13
C14
L18
+Vs+Vbias
C24
95 mm
C25
R7
C20 C21 C22 C23
C26
B2
C15
Dimensions in mm. The components are situated on one side of the Rogers 5880 printed circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.9 Printed-circuit board and component layout for the class-AB broadband testcircuit.
1999 Aug 26 8
Page 9
Philips Semiconductors Preliminary specification
Fig.10 Power gain and drain efficiency as functions
of frequency; typical values.
Th=25°C; VCE=32V; IDQ= 1.15A; PAL BG signal (TV); Sync compression: input 33 %, output 27 %; measured in broadband testcircuit.
Fig.12 Power gain and drain efficiency as functions
of frequency; typical values.
Th=25°C; VDS=32V; IDQ= 1.15 A; CW class-AB; PL=150W measured in broadband testcircuit.
η
UHF power LDMOS transistor BLF861
16
G
P
(dB)
G
P
12
η
8
D
4
0
400 500 600 700 800 900
f (MHz)
80
60
40
20
0
η
(%)
250
P
D
o sync
(W)
200
150
100
50
0
400 500 600 700 800 900
f (MHz)
Th=25°C; VCE=32V; IDQ= 1.15A; PAL BG signal (TV); Sync compression: input 33 %, output 27 %; measured in broadband testcircuit.
Fig.11 Peak envelope sync power as a function of
frequency; typical values.
16
G
P
(dB)
G
P
12
8
4
0
400 500 600 700 800 900
1999 Aug 26 9
f (MHz)
80
60
40
20
0
η
(%)
D
Page 10
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF861
PACKAGE OUTLINE
Flanged balanced LDMOST package; 2 mounting holes; 4 leads SOT540A
D
A
F
D
1
U
1
q
H
1
w
2
C
M M
C
12
H
U
2
5
A
e
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
8.51
8.26
0.335
0.325
c
0.15
0.10
0.006
0.004
Db
22.05
21.64
0.868
0.852
D
22.05
21.64
0.868
0.852
e U
1
10.26
10.21
10.06
0.404
0.402
0.396
UNIT
mm
inches
A
5.77
5.00
0.227
0.197
43
b
0 5 10 mm
EE
1
10.31
10.01
0.406
0.394
F
1.78
1.52
0.070
0.060
scale
w
H
15.75
14.73
0.620
0.580
M
3
H
1
18.72
18.47
0.737
0.727
p
B
3.38
3.12
0.133
0.123
w
1
p
M M M
AB
Q
2.72
27.94
2.46
0.107
0.097
c
E
1
Q
qw
U
1
34.16
33.91
1.345
1.335
2
9.91
9.65
0.390
0.380
w
E
w
3
2
1
0.250.25 0.51
0.0100.010 0.0201.100
OUTLINE
VERSION
SOT540A
REFERENCES
IEC JEDEC EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-03-30 99-08-27
1999 Aug 26 10
Page 11
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF861
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Aug 26 11
Page 12
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1999
Internet: http://www.semiconductors.philips.com
67
Printed in The Netherlands budgetnum/printrun/ed/pp12 Date of release: 1999 Aug 26 Docume nt order number: 93 97 750 06336
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