Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor designed for
communications transmitter
applications in the UHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT262A2 balanced flange
envelope, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PIN CONFIGURATION
12
MBB157
d
2
s
d
1
alfpage
g
2
g
1
55
Top view
34
MSB008
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
PINNING - SOT262A2
PINDESCRIPTION
1drain 1
2drain 2
3gate 1
4gate 2
5source
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
WARNING
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a push-pull common source test circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
D
CW, class-B50028150> 10> 50
October 19922
Page 3
Philips SemiconductorsProduct specification
UHF push-pull power MOS transistorBLF548
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
drain-source voltage−65V
gate-source voltage−20V
DC drain current−15A
total power dissipationup to Tmb = 25 °C; total device; both
L2, L23semi-rigid cable (note 5)50 Ωlength 66.5 mm
L4, L5stripline (note 4)22.3 Ωlength 35 mm
L6, L7stripline (note 4)22.3 Ωlength 10 mm
L8, L9stripline (note 4)22.3 Ωlength 5.5 mm
L10, L11, L16, L17grade 3B Ferroxcube wideband RF
choke
L12, L151 turn enamelled 1.5 mm copper
wire
L13, L14stripline (note 4)22.3 Ωlength 15 mm
L18, L19stripline (note 4)22.3 Ωlength 36 mm
L20, L21stripline (note 4)22.3 Ωlength 8.5 mm
R1, R50.4 W metal film resistor24.7 kΩ2322 151 72473
R2, R610 turn potentiometer5 kΩ
R3, R40.4 W metal film resistor10.5 kΩ2322 151 71053
R7, R81 W metal film resistor10 Ω2322 151 51009
18 pF
12 pF
8.2 pF
30 pF
width 4 mm
width 3.6 mm
width 7 mm
width 7 mm
width 7 mm
4312 020 36642
17 nHlength 5 mm
int. dia. 9 mm
leads 2 × 5 mm
width 7 mm
width 7 mm
width 7 mm
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality.
3. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
4. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2),
thickness 0.79 mm.
5. Cables L2 and L23 are soldered to striplines L1 and L22 respectively.
October 19928
Page 9
Philips SemiconductorsProduct specification
UHF push-pull power MOS transistorBLF548
handbook, full pagewidth
L1/L2
L3
handbook, full pagewidth
C2
C1
C3
C4
L18
L19
V
C13
C22
C16
V
DS
DS
C12
C23
L20
L21
L22/L23
C24
L24
MBC231 - 1
R2
L10
R7
C8
C7
R3
L4
C5
C6
L5
L6
C9
L7
R4
C10
C11
R6
C14
L13
L8
C18
C19
L9
L14
C15C17
200 mm
L12
C20
C21
L15
L11
L16
R8
L17
strap
rivetsrivets
strap
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully
metallized to serve as a ground plane. Connections are made by means of copper straps and hollow rivets for a
direct contact between upper and lower sheets.
strap
strap
strap
strap
Fig.12 Component layout for 500 MHz class-B test circuit.
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
5.85
5.58
c
Db
21.98
0.16
0.10
0.006
0.004
IEC JEDEC EIAJ
21.71
0.865
0.855
11.05
0.435
EE
eU
10.27
10.05
0.404
0.395
1
10.29
10.03
0.405
0.070
0.396
0.060
REFERENCES
F
1.78
1.52
H
20.58
20.06
0.81
0.79
H
17.02
16.51
0.67
0.65
p
1
3.28
3.02
0.129
0.119
Q
2,47
2.20
0.097
0.087
qw
U
1
2
9.91
34.17
27.94
PROJECTION
9.65
33.90
0.390
1.345
0.380
1.335
EUROPEAN
A
UNIT
5.39
mm
4.62
0.230
0.212
inches
OUTLINE
VERSION
SOT262A297-06-28
0.182
0.220
October 199211
w
1
ISSUE DATE
w
3
2
0.250.511.02
0.010.020.041.100
Page 12
Philips SemiconductorsProduct specification
UHF push-pull power MOS transistorBLF548
DEFINITIONS
Data Sheet Status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
October 199212
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