Datasheet BLF548 Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF548
UHF push-pull power MOS transistor
Product specification
October 1992
Page 2
h
UHF push-pull power MOS transistor BLF548
FEATURES
High power gain
Easy power control
Good thermal stability
Gold metallization ensures
excellent reliability
Designed for broadband operation.
DESCRIPTION
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range.
The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors.
PIN CONFIGURATION
12
MBB157
d
2
s
d
1
alfpage
g
2
g
1
55
Top view
34
MSB008
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling.
PINNING - SOT262A2
PIN DESCRIPTION
1 drain 1 2 drain 2 3 gate 1 4 gate 2 5 source
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
WARNING
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a push-pull common source test circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
D
CW, class-B 500 28 150 > 10 > 50
October 1992 2
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UHF push-pull power MOS transistor BLF548
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
drain-source voltage 65 V gate-source voltage 20 V DC drain current 15 A total power dissipation up to Tmb = 25 °C; total device; both
330 W
sections equally loaded storage temperature 65 150 °C junction temperature 200 °C
SYMBOL PARAMETER CONDITIONS
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting base
thermal resistance from mounting
Tmb = 25 °C; P
= 330 W;
tot
total device; both sections equally loaded total device; both sections equally loaded 0.15 K/W
base to heatsink
2
10
handbook, halfpage
I
D
(A)
10
(1)
MRA997
(2)
400
handbook, halfpage
P
tot
(W)
350
300
250
200
150
100
50
THERMAL
RESISTANCE
0.5 K/W
MRA532
(2)
(1)
1
110
(1) Current in this area may be limited by R (2) Tmb = 25 °C. Total device; both sections equally loaded.
VDS (V)
DS(on)
.
2
10
Fig.2 DC SOAR.
October 1992 3
0
0 20 40 60 80 100 120
(1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded.
Fig.3 Power/temperature derating curves.
Th (
o
C)
Page 4
UHF push-pull power MOS transistor BLF548
CHARACTERISTICS (per section)
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage VGS = 0; ID = 40 mA 65 −− V drain-source leakage current VGS = 0; VDS = 28 V −−0.5 mA gate-source leakage current ±VGS = 20 V; VDS = 0 −−1 µA gate-source threshold voltage ID = 160 mA; VDS = 10 V 2 4V forward transconductance ID = 4.8 A; VDS = 10 V 2.4 3.5 S drain-source on-state resistance ID = 4.8 A; VGS = 10 V 0.25 0.3 on-state drain current VGS = 15 V; VDS = 10 V 16 20 A input capacitance VGS = 0; VDS = 28 V; f = 1 MHz 105 pF output capacitance VGS = 0; VDS = 28 V; f = 1 MHz 90 pF feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz 25 pF
handbook, halfpage
3
TC
(mV/K)
2
1
0
1
2
3
4
10
VDS= 10 V.
2
1
10
110
ID (A)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical values per section.
MRA524
25
handbook, halfpage
I
D
(A)
20
15
10
5
0
0 4 8 12 16
VDS = 10 V; Tj = 25 °C.
MRA529
VGS (V)
Fig.5 Drain current as a function of gate-source
voltage, typical values per section.
October 1992 4
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UHF push-pull power MOS transistor BLF548
0.5
handbook, halfpage
R
DS(on)
(Ω)
0.4
0.3
0.2
0.1
0
0 40 80 120
ID = 4.8 A; VGS = 10 V.
Tj (
o
C)
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical values per section.
MRA522
400
handbook, halfpage
C
(pF)
300
200
100
0
0 102030
C
os
C
is
MRA525
VDS (V)
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values per section.
100
handbook, halfpage
C
rs
(pF)
80
60
40
20
0
0102030
MRA521
V
(V)
DS
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values per section.
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UHF push-pull power MOS transistor BLF548
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
= 25 °C; R
h
RF performance in a common source, push-pull, class-B test circuit.
= 0.15 K/W, unless otherwise specified.
th mb-h
MODE OF OPERATION
f
(MHz)
V
(V)
DS
I
DQ
(mA)
P
(W)
L
G
(dB)
CW, class-B 500 28 2 x 160 150 > 10
typ. 11
Ruggedness in class-B operation
The BLF548 is capable of withstanding a load mismatch corresponding to VSWR = 10 through all phases under the following conditions:
VDS = 28 V; f = 500 MHz at rated output power.
20
handbook, halfpage
G
P
(dB)
16
12
8
G
P
η
D
MRA527
100
80
60
40
η
(%)
D
handbook, halfpage
P
(W)
200
L
160
120
80
p
η
D
(%)
> 50
typ. 55
MRA531
4
0
0 50 100 150 200
Class-B operation; VDS = 28 V; IDQ = 2 × 160 mA; f = 500 MHz; Z
= 1.1 + j0.6 (per section).
L
PL (W)
20
0
Fig.9 Power gain and efficiency as functions of
load power, typical values.
October 1992 6
40
0
0102030
Class-B operation; VDS = 28 V; IDQ = 2 × 160 mA; f = 500 MHz; Z
= 1.1 + j0.6 (per section).
L
P
(W)
IN
Fig.10 Load power as a function of input power,
typical values.
Page 7
UHF push-pull power MOS transistor BLF548
+V
D
50 input
C12
V
bias
C1
L1
L2
C3
L3
R1 R2
C7
L4
C5C4
R3
C8
C6
L10
C14
L6
C9
DUT
C18
L8
L13 L18
C19
C20
L12
C13
C21
L11R7
L20
C23
C22
L22
L23
L24
50
output
f = 500 MHz.
C2
L5
C10
V
bias
R6R5
L7
R4
C11
L9 L14 L19
L15
C15
C17
+V
R8
C16
D
L16 L17
L21
C24
MBC232
Fig.11 Test circuit for class-B operation.
gewidth
List of components (see class-B test circuit)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C2 multilayer ceramic chip capacitor
22 pF
(note 1)
C3 multilayer ceramic chip capacitor
16 pF
(note 1) C4 film dielectric trimmer 2 to 9 pF 2222 809 09005 C5 multilayer ceramic chip capacitor
27 pF
(note 2) C6, C21, C22 film dielectric trimmer 2 to 18 pF 2222 809 09006 C7, C10, C14, C15 multilayer ceramic chip capacitor
390 pF
(note 1) C8, C11, C12, C17 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C9 multilayer ceramic chip capacitor
(note 3)
2 × 56 pF in series
October 1992 7
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UHF push-pull power MOS transistor BLF548
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C13, C16 electrolytic capacitor 10 µF, 63 V 2222 030 38109 C18 multilayer ceramic chip capacitor
(note 2) C19 multilayer ceramic chip capacitor
(note 2) C20 multilayer ceramic chip capacitor
(note 2) C23, C24 multilayer ceramic chip capacitor
(note 1) L1, L3, L22, L24 stripline (note 4) 34.5 length 66.5 mm
L2, L23 semi-rigid cable (note 5) 50 length 66.5 mm
L4, L5 stripline (note 4) 22.3 length 35 mm
L6, L7 stripline (note 4) 22.3 length 10 mm
L8, L9 stripline (note 4) 22.3 length 5.5 mm
L10, L11, L16, L17 grade 3B Ferroxcube wideband RF
choke L12, L15 1 turn enamelled 1.5 mm copper
wire
L13, L14 stripline (note 4) 22.3 length 15 mm
L18, L19 stripline (note 4) 22.3 length 36 mm
L20, L21 stripline (note 4) 22.3 length 8.5 mm
R1, R5 0.4 W metal film resistor 24.7 k 2322 151 72473 R2, R6 10 turn potentiometer 5 k R3, R4 0.4 W metal film resistor 10.5 k 2322 151 71053 R7, R8 1 W metal film resistor 10 2322 151 51009
18 pF
12 pF
8.2 pF
30 pF
width 4 mm
width 3.6 mm
width 7 mm
width 7 mm
width 7 mm
4312 020 36642
17 nH length 5 mm
int. dia. 9 mm leads 2 × 5 mm
width 7 mm
width 7 mm
width 7 mm
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality.
3. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
4. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2), thickness 0.79 mm.
5. Cables L2 and L23 are soldered to striplines L1 and L22 respectively.
October 1992 8
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UHF push-pull power MOS transistor BLF548
handbook, full pagewidth
L1/L2
L3
handbook, full pagewidth
C2
C1
C3 C4
L18
L19
V
C13
C22
C16
V
DS
DS
C12
C23
L20
L21
L22/L23
C24
L24
MBC231 - 1
R2
L10
R7
C8 C7
R3
L4
C5 C6
L5
L6
C9 L7
R4
C10
C11
R6
C14
L13
L8
C18 C19
L9
L14
C15 C17
200 mm
L12
C20 C21
L15
L11
L16
R8 L17
strap
rivets rivets
strap
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as a ground plane. Connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
strap
strap
strap
strap
Fig.12 Component layout for 500 MHz class-B test circuit.
strap
strap
MBC230
70
mm
October 1992 9
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UHF push-pull power MOS transistor BLF548
handbook, halfpage
1
Z
i
(Ω)
0
1
2
3
4
50 150 250 350 450 550
Class-B operation; VDS = 28 V; IDQ = 160 mA (per section);
= 150 W (total device).
P
L
r
i
x
i
MRA528
f (MHz)
Fig.13 Input impedance as a function of frequency
(series components), typical values per section.
handbook, halfpage
6
Z
L
(Ω)
5
4
R
3
2
1
0
50 150 250 350 450 550
Class-B operation; VDS = 28 V; IDQ = 160 mA (per section);
= 150 W (total device).
P
L
L
X
L
MRA530
f (MHz)
Fig.14 Load impedance as a function of frequency
(series components), typical values per section.
handbook, halfpage
Fig.15 Definition of MOS impedance.
30
handbook, halfpage
G
P
(dB)
25
20
15
10
Z
i
Z
MBA379
L
5
0
50 150 250 350 450 550
Class-B operation; VDS = 28 V; IDQ = 160 mA (per section);
= 150 W (total device).
P
L
MRA526
f (MHz)
Fig.16 Power gain as a function of frequency,
typical values per section.
October 1992 10
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UHF push-pull power MOS transistor BLF548
PACKAGE OUTLINE
Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A2
D
A
F
H
U
2
A
U
1
q
H
1
w
2
M
C
12
5
43
scale
w
3
M
b
e
0 5 10 mm
B
C
p
w
1
M
AB
c
E
1
Q
E
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
5.85
5.58
c
Db
21.98
0.16
0.10
0.006
0.004
IEC JEDEC EIAJ
21.71
0.865
0.855
11.05
0.435
EE
e U
10.27
10.05
0.404
0.395
1
10.29
10.03
0.405
0.070
0.396
0.060
REFERENCES
F
1.78
1.52
H
20.58
20.06
0.81
0.79
H
17.02
16.51
0.67
0.65
p
1
3.28
3.02
0.129
0.119
Q
2,47
2.20
0.097
0.087
qw
U
1
2
9.91
34.17
27.94
PROJECTION
9.65
33.90
0.390
1.345
0.380
1.335
EUROPEAN
A
UNIT
5.39
mm
4.62
0.230
0.212
inches
OUTLINE VERSION
SOT262A2 97-06-28
0.182
0.220
October 1992 11
w
1
ISSUE DATE
w
3
2
0.250.51 1.02
0.010.02 0.041.100
Page 12
UHF push-pull power MOS transistor BLF548
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1992 12
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