Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF547
UHF push-pull power MOS
transistor
Product specification
October 1992
Page 2
Philips Semiconductors Product specification
h
UHF push-pull power MOS transistor BLF547
FEATURES
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures
excellent reliability
• Designed for broadband operation.
DESCRIPTION
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor designed for
communications transmitter
applications in the UHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT262A2 balanced flange
envelope, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PIN CONFIGURATION
12
MBB157
d
2
s
d
1
alfpage
g
2
g
1
55
Top view
34
MSB008
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
PINNING - SOT262A2
PIN DESCRIPTION
1 drain 1
2 drain 2
3 gate 1
4 gate 2
5 source
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
WARNING
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a push-pull common-source test circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
L
G
P
(dB)
η
(%)
D
CW, class-B 500 28 100 > 10 > 50
October 1992 2
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Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF547
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
i
THERMAL RESISTANCE
drain-source voltage − 65 V
gate-source voltage − 20 V
DC drain current − 9A
total power dissipation up to Tmb=25°C; total device;
− 225 W
both sections equally loaded
storage temperature −65 150 °C
junction temperature − 200 °C
SYMBOL PARAMETER CONDITIONS
R
th j-mb
thermal resistance from junction to
mounting base
Tmb=25°C; P
total device; both sections equally
loaded
R
th mb-h
2
10
handbook, halfpage
I
D
(A)
10
thermal resistance from mounting
base to heatsink
(1)
(2)
MRA996
total device; both sections equally
loaded
250
handbook, halfpage
P
tot
(W)
200
150
100
50
= 225 W
tot
THERMAL
RESISTANCE
max. 0.78 K/W
max. 0.15 K/W
MRB027
(2)
(1)
1
110
(1) Current in this area may be limited by R
(2) Tmb=25°C;
Total device; both sections equally loaded.
VDS (V)
.
DS(on)
2
10
Fig.2 DC SOAR.
October 1992 3
0
020
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
40 60 80 100 120
Fig.3 Power/temperature derating curves.
Th (oC)
Page 4
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF547
CHARACTERISTICS (per section)
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage VGS= 0; ID= 25 mA 65 −−V
drain-source leakage current VGS= 0; VDS= 28 V −−2.5 mA
gate-source leakage current ±VGS= 20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 100 mA; VDS= 10 V 1 − 4V
forward transconductance ID= 3 A; VDS= 10 V 1.5 2.1 − S
drain-source on-state resistance ID= 3 A; VGS= 10 V − 0.4 0.5 Ω
on-state drain current VGS= 15 V; VDS= 10 V 10 13 − A
input capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 77 85 pF
output capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 62 70 pF
feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 18 21 pF
handbook, halfpage
4
TC
(mV/K)
2
0
−2
−4
−2
10
VDS= 10 V.
−1
10
110
I
(A)
D
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values per section.
MRB025
15
handbook, halfpage
I
D
(A)
10
5
0
0 5 10 15 20
VDS= 10 V; Tj= 25 °C.
MRB024
VGS (V)
Fig.5 Drain current as a function of gate-source
voltage, typical values per section.
October 1992 4
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Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF547
0.8
handbook, halfpage
R
DS(on)
(Ω)
0.6
0.4
0.2
0
0 40 80 120 160
ID= 3 A; VGS= 10 V.
Tj (
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values per section.
MRB029
o
C)
300
handbook, halfpage
C
(pF)
200
100
0
0 102030
VGS= 0; f = 1 MHz.
MRB020
C
is
C
is
V
(V)
DS
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values per
section.
120
handbook, halfpage
C
rs
(pF)
80
40
0
0102030
VGS= 0; f = 1 MHz.
VDS (V)
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values per
section.
MRB019
October 1992 5
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Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF547
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
= 25 °C; R
h
RF performance in a common source, push-pull, class-B test circuit.
= 0.15 K/W, unless otherwise specified.
th mb-h
MODE OF OPERATION
f
(MHz)
V
(V)
DS
I
DQ
(mA)
P
(W)
L
G
(dB)
CW, class-B 500 28 2 × 100 100 > 10
typ. 12
Ruggedness in class-B operation
The BLF547 is capable of withstanding a load mismatch
corresponding to VSWR = 10 through all phases under the
following conditions:
VDS= 28 V; f = 500 MHz at rated output power.
25
handbook, halfpage
G
P
(dB)
20
15
10
5
MRB021
100
η
(%)
G
P
80
60
40
η
20
160
handbook, halfpage
P
L
(W)
120
80
40
P
η
D
(%)
> 50
typ. 55
MRB028
0
20 60 100 140
Class-B operation; VDS= 28 V; IDQ= 2 ×100 mA;
f = 500 MHz; Z
= 1.5 + j1.8 Ω (per section).
L
PL (W)
0
Fig.9 Power gain and efficiency as functions of
load power, typical values.
October 1992 6
0
048121620
Class-B operation; VDS= 28 V; IDQ= 2 × 100 mA;
f = 500 MHz; Z
= 1.5 + j1.8 Ω (per section).
L
P
(W)
IN
Fig.10 Load power as a function of input power,
typical values.
Page 7
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF547
+V
D
50 Ω
input
C12
V
bias
C1
L1
L2
C3
L3
R1 R2
C7
L4
C5C4
R3
C8
C6
L10
C14
L6
C9
DUT
C18
L8
L13 L18
C19
C20
L12
C13
C21
L11R7
L20
C23
C22
L22
L23
L24
50 Ω
output
f = 500 MHz.
C2
V
bias
L5
C10
L7
R4
C11
R6R5
L9 L14 L19
L15
C15
C17
+V
R8
C16
D
L16 L17
L21
C24
MBC232
Fig.11 Test circuit for class-B operation.
pagewidth
List of components (see class-B test circuit)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C2 multilayer ceramic chip capacitor
15 pF
(note 1)
C3 multilayer ceramic chip capacitor
16 pF
(note 1)
C4 film dielectric trimmer 2 to 9 pF 2222 809 09005
C5 multilayer ceramic chip capacitor
15 pF
(note 2)
C6, C21, C22 film dielectric trimmer 2 to 18 pF 2222 809 09006
C7, C10, C14, C15 multilayer ceramic chip capacitor
390 pF
(note 1)
C8, C11, C12, C17 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C9 multilayer ceramic chip capacitor
(note 3)
2 × 68 pF
in series
October 1992 7
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Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF547
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C13, C16 electrolytic capacitor 10 µF, 63 V 2222 030 28109
C18 multilayer ceramic chip capacitor
(note 2)
C19 multilayer ceramic chip capacitor
(note 2)
C20 multilayer ceramic chip capacitor
(note 2)
C23, C24 multilayer ceramic chip capacitor
(note 1)
L1, L3, L22, L24 stripline (note 4) 34.5 Ω length 66.5 mm
L2, L23 semi-rigid cable 50 Ω length 66.5 mm
L4, L5 stripline (note 4) 22.3 Ω length 35 mm
L6, L7 stripline (note 4) 22.3 Ω length 10 mm
L8, L9 stripline (note 4) 22.3 Ω length 5.5 mm
L10, L11, L16, L17 grade 3B Ferroxcube RF choke 4312 020 36640
L12, L15 1 turn enamelled 1.5 mm copper
wire
L13, L14 stripline (note 4) 22.3 Ω length 15 mm
L18, L19 stripline (note 4) 22.3 Ω length 36 mm
L20, L21 stripline (note 4) 22.3 Ω length 8.5 mm
R1, R5 0.4 W metal film resistor 24.7 kΩ 2322 151 72473
R2, R6 10 turn potentiometer 5 kΩ
R3, R4 0.4 W metal film resistor 10.5 kΩ 2322 151 71053
R7, R8 1 W metal film resistor 10 Ω 2322 151 71009
10 pF
27 pF
8.2 pF
30 pF
width 4 mm
width 3.6 mm
width 7 mm
width 7 mm
width 7 mm
17 nH length 5 mm
int. dia. 9 mm
leads 2 × 5 mm
width 7 mm
width 7 mm
width 7 mm
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality.
3. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
4. The striplines are on a double copper-clad printed circuit board, with PTFE fiber-glass dielectric (εr= 2.2),
thickness 0.79 mm.
October 1992 8
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Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF547
handbook, full pagewidth
L1/L2
L3
handbook, full pagewidth
C2
C1
C3
C4
L18
L19
V
C13
C22
C16
V
DS
DS
C12
C23
L20
L21
L22/L23
C24
L24
MBC231 - 1
R2
L10
R7
C8
C7
R3
L4
C5
C6
L5
R4
L6
C9
L7
C10
C11
R6
C14
L13
L8
C18
C19
L9
L14
C15 C17
200 mm
L12
C20
C21
L15
L11
L16
R8
L17
strap
rivets rivets
strap
The circuit and components are situated on one side of the printed circuit board, the other side being fully
metallized to serve as a ground plane. Connections are made by means of copper straps and hollow rivets for
a direct contact between upper and lower sheets.
strap
strap
strap
strap
Fig.12 Component layout for 500 MHz class-B test circuit.
strap
strap
MBC230
70
mm
October 1992 9
Page 10
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF547
handbook, halfpage
2
Z
i
(Ω)
0
−2
−4
−6
100 200 300 400 500
Class-B operation; VDS= 28 V; IDQ= 100 mA (per section);
= 100 W (total device).
P
L
r
i
x
i
MRB023
f (MHz)
Fig.13 Input impedance as a function of frequency
(series components), typical values per
section.
10
handbook, halfpage
Z
L
(Ω)
8
6
4
2
0
100 200 300 400 500
Class-B operation; VDS= 28 V; IDQ= 100 mA (per section);
= 100 W (total device).
P
L
R
L
X
L
MRB026
f (MHz)
Fig.14 Load impedance as a function of frequency
(series components), typical values per
section.
handbook, halfpage
Fig.15 Definition of MOS impedance.
30
handbook, halfpage
G
P
(dB)
20
10
Z
i
Z
MBA379
L
0
100 200 300 400 500
Class-B operation; VDS= 28 V; IDQ= 100 mA (per section);
= 100 W (total device).
P
L
MRB022
f (MHz)
Fig.16 Power gain as a function of frequency,
typical values per section.
October 1992 10
Page 11
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF547
PACKAGE OUTLINE
Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A2
D
A
F
H
U
2
A
U
1
q
H
1
w
2
M
12
5
43
scale
w
3
M
b
e
0 5 10 mm
B
C
C
p
w
1
M
AB
c
E
1
Q
E
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
5.85
5.58
c
Db
21.98
0.16
0.10
0.006
0.004
IEC JEDEC EIAJ
21.71
0.865
0.855
11.05
0.435
EE
e U
10.27
10.05
0.404
0.395
1
10.29
10.03
0.405
0.070
0.396
0.060
REFERENCES
F
1.78
1.52
H
20.58
20.06
0.81
0.79
H
1
17.02
16.51
0.67
0.65
p
3.28
3.02
0.129
0.119
Q
2,47
2.20
0.097
0.087
qw
U
1
2
9.91
34.17
27.94
PROJECTION
9.65
33.90
0.390
1.345
0.380
1.335
EUROPEAN
UNIT
inches
A
5.39
mm
4.62
0.230
0.212
0.220
0.182
OUTLINE
VERSION
SOT262A2 97-06-28
October 1992 11
w
1
ISSUE DATE
w
3
2
0.250.51 1.02
0.010.02 0.041.100
Page 12
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF547
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
October 1992 12
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