Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF546
UHF push-pull power MOS
transistor
Product specification
October 1992
Page 2
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF546
FEATURES
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures
excellent reliability
• Designed for broadband operation.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS push-pull
transistor designed for
communications transmitter
applications in the UHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT268 balanced flange
envelope, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PIN CONFIGURATION
handbook, halfpage
1
2
Top view
4
g
5
3
g
d
s
d
MAM395
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
PINNING - SOT268
PIN DESCRIPTION
1 drain 1
2 gate 1
3 gate 2
4 drain 2
5 source
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
WARNING
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a push-pull common source test circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
L
G
(dB)
p
(%)
CW, class-B 500 28 80 > 11 > 50
η
D
October 1992 2
Page 3
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF546
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
drain-source voltage − 65 V
gate-source voltage − 20 V
DC drain current − 9A
total power dissipation up to Tmb=25°C; total device;
− 145 W
both sections equally loaded
storage temperature −65 150 °C
junction temperature − 200 °C
SYMBOL PARAMETER CONDITIONS
R
th j-mb
R
th mb-h
2
10
handbook, halfpage
I
D
(A)
10
thermal resistance from junction to
mounting base
thermal resistance from mounting
base to heatsink
MRA995
(1)
(2)
total device; both sections equally
loaded
total device; both sections equally
loaded
200
handbook, halfpage
P
tot
(W)
160
120
80
40
THERMAL
RESISTANCE
1.2 K/W
0.25 K/W
MDA519
(2)
(1)
1
110
(1) Current in this area may be limited by R
(2) Tmb=25°C.
Total device; both sections equally loaded.
VDS (V)
DS(on)
.
2
10
Fig.2 DC SOAR.
October 1992 3
0
0
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
40 80
120
Fig.3 Power/temperature derating curves.
Th (°C)
160
Page 4
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF546
CHARACTERISTICS (per section)
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage VGS= 0; ID= 20 mA 65 −−V
drain-source leakage current VGS= 0; VDS= 28 V −−2mA
gate-source leakage current ±VGS= 20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 80 mA; VDS= 10 V 1 − 4V
forward transconductance ID= 2.4 A; VDS= 10 V 1.2 1.7 − S
drain-source on-state resistance ID= 2.4 A; VGS= 10 V − 0.4 0.6 Ω
on-state drain current VGS= 15 V; VDS= 10 V − 10 − A
input capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 60 − pF
output capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 46 − pF
feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 15 − pF
12
handbook, halfpage
T.C.
(mV/K)
8
4
0
−4
10
VDS= 10 V.
−2
−1
10
110
ID (A)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values per section.
MDA520
12
handbook, halfpage
I
D
(A)
8
4
0
0
VDS= 10 V; Tj= 25 °C.
4
816
MDA521
12
V
(V)
GS
Fig.5 Drain current as a function of gate-source
voltage, typical values per section.
October 1992 4
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Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF546
0.8
handbook, halfpage
R
DSon
(Ω)
0.6
0.4
0.2
0
0 40 80 160
ID= 2.4 A; VGS= 10 V.
120
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values per section.
MDA522
Tj (°C)
C
is
C
os
30
V
DS
MDA523
(V)
250
handbook, halfpage
C
(pF)
200
150
100
50
0
110
VGS= 0; f = 1 MHz.
20 40
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values per
section.
30
V
DS
MDA524
(V)
40
80
handbook, halfpage
C
rs
(pF)
60
40
20
0
01020
VGS= 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values per
section.
October 1992 5
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Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF546
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
= 25 °C; R
h
RF performance in a common source, class-B, push-pull circuit.
= 0.25 K/W, unless otherwise specified.
th mb-h
MODE OF OPERATION
f
(MHz)
V
(V)
DS
I
DQ
(mA)
P
(W)
L
(dB)
CW, class-B 500 28 2 × 80 80 > 11
typ. 13
Ruggedness in class-B operation
The BLF546 is capable of withstanding a full load
mismatch corresponding to VSWR = 10 through all phases
under the following conditions:
VDS= 28 V; f = 500 MHz at rated output power.
25
handbook, halfpage
G
p
(dB)
20
15
10
G
p
η
C
MDA525
100
η
(%)
80
60
40
120
C
handbook, halfpage
P
L
(W)
80
40
G
p
η
D
(%)
> 50
typ. 60
MDA526
5
0
40 60 80
Class-B operation; VDS= 28 V; IDQ= 2 ×80 mA;
= 2.3 + j2.7 Ω (per section); f = 500 MHz.
Z
L
100
PL (W)
120
20
0
Fig.9 Power gain and efficiency as functions of
load power, typical values.
October 1992 6
0
0
Class-B operation; VDS= 28 V; IDQ= 2 × 80 mA;
= 2.3 + j2.7 Ω (per section); f = 500 MHz.
Z
L
4
816
12
PIN (W)
Fig.10 Load power as a function of input power,
typical values.
Page 7
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF546
handbook, full pagewidth
50 Ω
input
L1L3C1
L2
V
BIAS
L4 L6 L8 L10 L12
C1
L5 L7 L9 L11 L13
V
BIAS
R1
C3
C4 C5 C6 C9
R5 R6
C7
C10
R2
R3
R4
C8
C11
R7 L20
D.U.T.
BLF546
R8 L21
+V
D
C12
C13
C14
L16
L14 L18 L22 L26
C18
C19 C20 C21 C22
L15 L19 L23 L25
L17
C15
C17
C16
L24
MDA530
C23
C24
L28
L27
50 Ω
output
f = 500 MHz.
+V
D
Fig.11 Test circuit for class-B operation.
List of components (class-B test circuit)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C2 multilayer ceramic chip capacitor
33 pF, 500 V
(note 1)
C3 multilayer ceramic chip capacitor
11 pF, 500 V
(note 1)
C4, C6, C21, C22 film dielectric trimmer 2 to 9 pF 2222 809 09005
C5 multilayer ceramic chip capacitor
12 pF, 500 V
(note 2)
C7, C10, C14, C15 multilayer ceramic chip capacitor
390 pF, 500 V
(note 1)
C8, C11, C12, C17 multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104
C9 multilayer ceramic chip capacitor
39 pF, 500 V
(note 2)
C13, C16 electrolytic capacitor 4.7 µF, 63 V 2222 030 38478
C18, C19 multilayer ceramic chip capacitor
18 pF, 500 V
(note 2)
October 1992 7
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Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF546
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C20 multilayer ceramic chip capacitor
(note 2)
C23, C24 multilayer ceramic chip capacitor
(note 1)
L1, L3, L26, L28 stripline (note 3) 50 Ω 55.6 × 2.4 mm
L2 semi-rigid cable (note 4) 50 Ω ext. dia. 2 mm
L4, L5 stripline (note 3) 42 Ω 12 × 3 mm
L6, L7 stripline (note 3) 42 Ω 26.5 × 3 mm
L8, L9 stripline (note 3) 42 Ω 5.5 × 3 mm
L10, L11 stripline (note 3) 42 Ω 6 × 3 mm
L12, L13 stripline (note 3) 42 Ω 3 × 3 mm
L14, L15 stripline (note 3) 42 Ω 7 × 3 mm
L16, L17 3 turns enamelled 1 mm copper
wire
L18, L19 stripline (note 3) 42 Ω 12 × 3 mm
L20, L21 grade 3B Ferroxcube RF choke 4312 020 36642
L22, L23 stripline (note 3) 42 Ω 20 × 3 mm
L24, L25 stripline (note 3) 42 Ω 14 × 3 mm
L27 semi-rigid cable (note 5) 50 Ω ext. dia. 2 mm
R1, R5 0.4 W metal film resistor 11.5 kΩ 2322 151 71153
R2, R6 10 turns cermet potentiometer 50 kΩ
R3, R4 0.4 W metal film resistor 10 kΩ 2322 151 71003
R7, R8 1 W metal film resistor 10 Ω 2322 153 51009
15 pF, 500 V
15 pF, 500 V
ext. conductor
length 55.6 mm
15.6 nH length 8.5 mm
int. dia. 5.4 mm
leads 2 × 5 mm
ext. conductor
length 55.6 mm
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality.
3. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (εr= 2.2);
thickness1⁄32inch.
4. Semi-rigid cable L2 is soldered on to stripline L3.
5. Semi-rigid cable L27 is soldered on to stripline L28.
October 1992 8
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Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF546
200
handbook, full pagewidth
straps straps
V
D
C15
L16
L18
C19
L19
L17
C12
L20
R7
C20
C21
R8
L21
C17
V
L22
L23
D
C13
C16
C22
L24
L25
C23
C24
L26
R2
L2
L3 L27
C1
L4
C3 C4 C5
L5
C2
L1
L6
L7
C7 C8 C14
R3
L8
L10
L12 L14
C6
C9C18
L15
L13
L11
L9
R4
C10 C11
R6
85
L28
MDA518
The circuit and components are situated on one side of the printed circuit board, the other side being fully
metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets
for a direct contact between upper and lower sheets.
Dimensions in mm.
Fig.12 Component layout for 500 MHz test circuit.
October 1992 9
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Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF546
handbook, halfpage
2
Z
i
(Ω)
0
−2
−4
−6
−8
0 200
Class-B operation; VDS= 28 V; IDQ= 2 × 80 mA;
= 80 W.
P
L
r
x
i
i
400 600
MDA527
f (MHz)
Fig.13 Input impedance as a function of frequency
(series components), typical values per
section.
10
handbook, halfpage
Z
L
(Ω)
8
R
6
4
2
0
0 200
Class-B operation; VDS= 28 V; IDQ= 2 × 80 mA;
= 80 W.
P
L
L
X
L
400 600
MDA528
f (MHz)
Fig.14 Load impedance as a function of frequency
(series components), typical values per
section.
30
handbook, halfpage
G
p
(dB)
20
10
0
0
Class-B operation; VDS= 28 V; IDQ= 2 × 80 mA;
= 80 W.
P
L
200
400 600
f (MHz)
Fig.15 Power gain as a function of frequency,
typical values per section.
MDA529
October 1992 10
Page 11
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF546
PACKAGE OUTLINE
Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT268A
D
A
F
5
U
1
q
H
1
1
U2H
A
2
e
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
1.66
1.39
c
0.13
0.07
0.005
0.003
Db
12.96
12.44
0.510
0.490
e
EU
6.48
6.22
0.255
0.245
6.45
0.254
2.04
1.77
0.080
0.070
UNIT
mm
inches
A
4.91
4.19
0.193
0.165
0.065
0.055
4
3
b
0 5 10 mm
scale
F
H
17.02
16.00
0.670
0.324
0.630
0.304
w
w
H
8.23
7.72
C
M
C
2
P
M
3
p
1
3.43
3.17
0.135
0.125
B
2.67
2.41
0.105
0.095
c
E
w
M
AB
1
Q
qw
18.42
U
1
24.90
24.63
0.980
0.970
Q
w
1
2
6.61
6.35
0.260
0.250
w
3
2
0.260.51 1.02
0.010.02 0.040.725
OUTLINE
VERSION
SOT268A 97-06-28
IEC JEDEC EIAJ
REFERENCES
EUROPEAN
PROJECTION
October 1992 11
ISSUE DATE
Page 12
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF546
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
October 1992 12
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