Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF545
UHF push-pull power MOS
transistor
Product specification
October 1992
Page 2
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF545
FEATURES
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures
excellent reliability
• Designed for broadband operation.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS push-pull
transistor designed for
communications transmitter
applications in the UHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT268 balanced flange
envelope, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PIN CONFIGURATION
handbook, halfpage
1
2
Top view
4
g
5
3
g
d
s
d
MAM395
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
PINNING - SOT268
PIN DESCRIPTION
1 drain 1
2 gate 1
3 gate 2
4 drain 2
5 source
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
WARNING
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a push-pull common source circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
L
G
P
(dB)
(%)
CW, class-B 500 28 40 > 11 > 50
η
D
October 1992 2
Page 3
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF545
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
drain-source voltage − 65 V
gate-source voltage − 20 V
DC drain current − 3.5 A
total power dissipation up to Tmb=25°C; total device;
− 92 W
both sections equally loaded
storage temperature −65 150 °C
junction temperature − 200 °C
SYMBOL PARAMETER CONDITIONS
R
th j-mb
R
th mb-h
2
10
handbook, halfpage
I
D
(A)
10
1
110
thermal resistance from junction to
mounting base
thermal resistance from mounting
base to heatsink
(1)
(2)
VDS (V)
MRA995
total device; both sections equally
loaded
total device; both sections equally
loaded
120
handbook, halfpage
P
tot
(W)
80
40
2
10
0
0
40 80
THERMAL
RESISTANCE
1.9 K/W
0.25 K/W
MBK463
(1)
(2)
Th ( °C)
160
120
(1) Current in this area may be limited by R
(2) Tmb=25°C.
Total device; both sections equally loaded.
DS(on)
.
Fig.2 DC SOAR.
October 1992 3
(1) Short-time operation during mismatch.
(2) Continuous operation.
Total device; both sections equally loaded.
Fig.3 Power/temperature derating curves.
Page 4
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF545
CHARACTERISTICS (per section)
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage VGS= 0; ID = 10 mA 65 −−V
drain-source leakage current VGS= 0; VDS= 28 V −−1mA
gate-source leakage current ±VGS= 20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 40 mA; VDS= 10 V 1 − 4V
forward transconductance ID= 1.2 A; VDS= 10 V 600 900 − mS
drain-source on-state resistance ID= 1.2 A; VGS= 10 V − 0.85 1.25 Ω
on-state drain current VGS= 15 V; VDS= 10 V − 4.8 − A
input capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 32 − pF
output capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 24 − pF
feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 6.4 − pF
handbook, halfpage
4
T.C
(mV/K)
2
0
−2
−4
10
VDS= 10 V.
−2
−1
10
110
ID (A)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current,
typical values per section.
MDA504
handbook, halfpage
6
I
D
(A)
4
2
0
0
VDS= 10 V; Tj= 25 °C.
5
10 20
MDA505
15
V
(V)
GS
Fig.5 Drain current as a function of gate-source
voltage, typical values per section.
October 1992 4
Page 5
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF545
handbook, halfpage
2
R
DSon
(Ω)
1.6
1.2
0.8
0.4
0
050
ID= 1.2 A; VGS= 10 V.
100 150
Tj (°C)
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values per section.
MDA506
100
handbook, halfpage
C
(pF)
80
60
40
20
0
010
VGS= 0; f = 1 MHz.
20 30
MDA507
C
is
C
os
V
(V)
DS
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values per
section.
40
handbook, halfpage
C
rs
(pF)
30
20
10
0
0102030
VGS= 0; f = 1 MHz.
VDS (V)
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values per
section.
MDA508
October 1992 5
Page 6
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF545
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
= 25 °C; R
h
RF performance in a common source, class-B, push-pull circuit.
= 0.25 K/W, unless otherwise specified.
th mb-h
MODE OF OPERATION
f
(MHz)
V
(V)
DS
I
DQ
(mA)
P
(W)
L
(dB)
CW, class-B 500 28 2 × 40 40 > 11
typ. 13
Ruggedness in class-B operation
The BLF545 is capable of withstanding a full load
mismatch corresponding to VSWR = 50 through all phases
under the following conditions:
VDS= 28 V; f = 500 MHz at rated output power.
24
handbook, halfpage
G
p
(dB)
16
MBK464
80
η
D
(%)
G
p
60
60
handbook, halfpage
P
L
(W)
40
G
P
η
D
(%)
> 50
typ. 60
MBK465
η
8
0
060
Class-B operation; VDS= 28 V; IDQ= 2 ×40 mA;
= 4.2+ j6.2 Ω (per section); f = 500 MHz.
Z
L
D
20
40
PL (W)
40
20
Fig.9 Power gain and efficiency as functions of
load power, typical values per section.
20
0
0
Class-B operation; VDS= 28 V; IDQ= 2 × 40 mA;
= 4.2 + j6.2 Ω (per section); f = 500 MHz.
Z
L
Fig.10 Load power as a function of input power,
typical values per section.
2
648
PIN (W)
October 1992 6
Page 7
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF545
handbook, full pagewidth
50 Ω
input
L2
+V
R2
C8
C9
R3
L1
L3
C1
C2
R1
C3
C4
L4
L5
L8L6
C6 C7C5
L7
L9
R4
C10
C11
R7
R8 L12
D.U.T.
BLF545
R9 L17
D
C12
C13
C14
L13
L10
L14 L20L18 L24
C19 C20 C21 C22C15
L15 L21L19 L23
L11
L16
C16
C17
L22
MBK461
C23
C24
L26
L25
50 Ω
output
f = 500 MHz.
+V
G
R5
R6
+V
C18
D
Fig.11 Test circuit for class-B operation.
October 1992 7
Page 8
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF545
List of components (class-B test circuit)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C2 multilayer ceramic chip capacitor
(note 1)
C3, C4 multilayer ceramic chip capacitor
(note 1)
C5, C7, C20, C22 film dielectric trimmer 1.8 to 10 pF 2222 809 05002
C6 multilayer ceramic chip capacitor
(note 1)
C8, C11, C12, C18 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C9, C10, C14, C16 multilayer ceramic chip capacitor
(note 1)
C13, C17 electrolytic capacitor 10 µF, 63 V
C15 multilayer ceramic chip capacitor
(note 1)
C19 multilayer ceramic chip capacitor
(note 1)
C21 multilayer ceramic chip capacitor
(note 1)
C23, C24 multilayer ceramic chip capacitor
(note 1)
L1, L3, L24, L26 stripline (note 2) 50 Ω 56 × 2.4 mm
L2, L25 semi-rigid cable (note 3) 50 Ω ext. dia. 2.2 mm
L4, L5 stripline (note 2) 56 Ω 13.4 × 2 mm
L6, L7 stripline (notes 2 and 4) 56 Ω 9.6 × 2 mm
L8, L9 stripline (note 2) 42 Ω 9 × 3 mm
L10, L11 stripline (note 2) 42 Ω 6 × 3 mm
L12, L17 grade 3B Ferroxcube RF choke 4312 020 36642
L13, L16 4 turns enamelled 1.2 mm copper
wire
L14, L15 stripline (note 2) 56 Ω 8 × 2 mm
L18, L19 stripline (note 2) 56 Ω 13 × 2 mm
L20, L21 stripline (note 2) 56 Ω 18 × 2 mm
L22, L23 stripline (note 2) 56 Ω 14 × 2 mm
R1 0.4 W metal film resistor 5.11 Ω 2322 151 75118
R2, R5 10 turns cermet potentiometer 50 kΩ
R3, R4 0.4 W metal film resistor 10 kΩ 2322 151 71003
R6, R7 0.4 W metal film resistor 205 kΩ 2322 151 72054
R8, R9 1 W metal film resistor 10 Ω 2322 151 71009
5.1 pF
16 pF
22 pF
390 pF
18 pF
13 pF
6.2 pF
10 pF
ext. conductor
length 56 mm
62 nH length 7.6 mm
int. dia. 5 mm
leads 2 × 5 mm
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
October 1992 8
Page 9
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF545
2. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (εr= 2.2);
thickness1⁄32inch.
3. Semi-rigid cables L2 and L25 are soldered on to striplines L1 and L26.
4. Striplines L6 and L7 are used in series with a 42 Ω stripline (11 × 3 mm).
82 103
handbook, full pagewidth
mounting screw
L1 + L2
L3
R1
C1
C2
C3
C4
rivet
mounting screw
straps
L14
L15
L13
L18
L19
L16
R7
C19
L12
L17
R8
+V
C20
D
L20
L21
R13
C12
C21, C22
L22
L23
C18
L24 + L25
C23
C24
L26
R3
R4
C14
C8
C9
R3
L8
L6
L4
L5
C5
C6
C7
L7
R4
L10
C15
L11
L9
C10
C11
C16
strap
85
+V
R6
D
R5
The circuit and components are situated on one side of the printed circuit board, the other side being fully
metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow
rivets for a direct contact between upper and lower sheets.
Dimensions in mm.
R9
Fig.12 Component layout for 500 MHz class-B test circuit.
October 1992 9
R17
MBK462
Page 10
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF545
handbook, halfpage
5
Z
i
(Ω)
0
−5
−10
−15
0
Class-B operation; VDS= 28 V; IDQ= 2 × 40 mA;
= 40 W.
P
L
r
i
x
i
200 400 600
MDA509
f (MHz)
Fig.13 Input impedance as a function of frequency
(series components), typical values per
section.
20
handbook, halfpage
Z
L
(Ω)
15
10
5
0
0
Class-B operation; VDS= 28 V; IDQ= 2 × 40 mA;
= 40 W.
P
L
R
L
X
L
200 400 600
MDA510
f (MHz)
Fig.14 Load impedance as a function of frequency
(series components), typical values per
section.
30
handbook, halfpage
G
p
(dB)
20
10
0
0
Class-B operation; VDS= 28 V; IDQ= 2 × 40 mA;
= 40 W.
P
L
200
400 600
f (MHz)
Fig.15 Power gain as a function of frequency,
typical values per section.
MDA529
October 1992 10
Page 11
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF545
PACKAGE OUTLINE
Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT268A
D
A
F
5
U
1
q
H
1
1
U2H
A
2
b
e
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
1.66
1.39
c
0.13
0.07
0.005
0.003
Db
12.96
12.44
0.510
0.490
F
e
EU
6.48
6.22
0.255
0.245
6.45
0.254
2.04
1.77
0.080
0.070
UNIT
mm
inches
A
4.91
4.19
0.193
0.165
0.065
0.055
w
M
2
4
3
w
3
0 5 10 mm
scale
H
H
1
17.02
8.23
16.00
7.72
0.670
0.324
0.630
0.304
B
C
C
P
M
p
3.43
3.17
0.135
0.125
Q
2.67
2.41
0.105
0.095
c
E
w
M
AB
1
Q
qw
U
1
24.90
18.42
24.63
0.980
0.970
w
1
2
6.61
6.35
0.260
0.250
w
3
2
0.260.51 1.02
0.010.02 0.040.725
OUTLINE
VERSION
SOT268A 97-06-28
IEC JEDEC EIAJ
REFERENCES
EUROPEAN
PROJECTION
October 1992 11
ISSUE DATE
Page 12
Philips Semiconductors Product specification
UHF push-pull power MOS transistor BLF545
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
October 1992 12
Loading...