Datasheet BLF544B Datasheet (Philips)

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DISCRETE SEMICONDUCTORS

DATA SH EET

BLF544B

UHF push-pull power MOS transistor

Product speciﬁcation

October 1992

Page 2

Philips Semiconductors Product speciﬁcation

UHF push-pull power MOS transistor BLF544B

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures

excellent reliability

• Designed for broadband operation.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range.

The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors.

PIN CONFIGURATION

fpage

Top view

MBB930

MBB157

Fig.1 Simplified outline and symbol.

CAUTION

The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling.

PINNING - SOT268

PIN DESCRIPTION

1 gate 1 2 drain 1 3 gate 2 4 drain 2 5 source

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

WARNING

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

= 25 °C in a push-pull common source test circuit.

(MHz)

(V)

(W)

(dB)

(%)

CW, class-B 500 28 20 > 12 > 50

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Philips Semiconductors Product speciﬁcation

UHF push-pull power MOS transistor BLF544B

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

±V

tot

stg

THERMAL RESISTANCE

drain-source voltage − 65 V gate-source voltage − 20 V DC drain current − 2A total power dissipation up to Tmb=25°C; total device;

− 48 W

both sections equally loaded storage temperature −65 150 °C junction temperature − 200 °C

SYMBOL PARAMETER CONDITIONS

th j-mb

th mb-h

handbook, halfpage

(A)

−1

110

thermal resistance from junction to mounting base

thermal resistance from mounting base to heatsink

MRA993

(1)

(2)

VDS (V)

total device; both sections equally

loaded

total device; both sections equally

loaded

handbook, halfpage

tot

(W)

40 80

THERMAL

RESISTANCE

3.7 K/W

0.25 K/W

MDA515

(1)

(2)

Th ( °C)

160

120

(1) Current in this area may be limited by R (2) Tmb=25°C. Total device; both sections equally loaded.

DS(on)

Fig.2 DC SOAR.

October 1992 3

(1) Short-time operation during mismatch. (2) Continuous operation. Total device; both sections equally loaded.

Fig.3 Power/temperature derating curves.

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Philips Semiconductors Product speciﬁcation

UHF push-pull power MOS transistor BLF544B

CHARACTERISTICS (per section)

= 25 °C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

(BR)DSS

DSS

GSS

GS(th)

DS(on)

DSX

drain-source breakdown voltage ID= 5 mA; VGS=0 65 −− V drain-source leakage current VGS= 0; VDS=28V −−0.5 mA gate-source leakage current ±VGS= 20 V; VDS=0 −−1 µA gate-source threshold voltage ID= 20 mA; VDS=10V 1 − 4V forward transconductance ID= 0.6 A; VDS= 10 V 300 450 − mS drain-source on-state resistance ID= 0.6 A; VGS=10V − 0.7 2.5 Ω on-state drain current VGS= 15 V; VDS=10V − 2.4 − A input capacitance VGS=0;VDS= 28 V; f = 1 MHz − 16 − pF output capacitance VGS=0;VDS= 28 V; f = 1 MHz − 12 − pF feedback capacitance VGS=0;VDS= 28 V; f = 1 MHz − 3.2 − pF

handbook, halfpage

T.C.

(mV/K)

−2

−4

−2

VDS=10V.

−1

ID (A)

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current, typical values per section.

MDA491

handbook, halfpage

(A)

VDS=10V.

10 20

MDA495

(V)

Fig.5 Drain current as a function of gate-source

voltage, typical values per section.

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Philips Semiconductors Product speciﬁcation

UHF push-pull power MOS transistor BLF544B

handbook, halfpage

DSon

(Ω)

0 50 100 150

ID= 0.6A; VGS=10V.

Tj ( °C)

Fig.6 Drain-source on-state resistance as a

function of junction temperature, typical values per section.

MDA496

handbook, halfpage

(pF)

010

VGS= 0; f = 1 MHz.

20 30

MDA497

(V)

Fig.7 Input and output capacitance as functions

of drain-source voltage, typical values per section.

handbook, halfpage

(pF)

010

VGS= 0; f = 1 MHz.

20 30

(V)

Fig.8 Feedback capacitance as a function of

drain-source voltage, typical values per section.

MDA498

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Philips Semiconductors Product speciﬁcation

UHF push-pull power MOS transistor BLF544B

APPLICATION INFORMATION FOR CLASS-B OPERATION

=25°C; R

RF performance in a push-pull, common source, class-B test circuit.

= 0.4 K/W; unless otherwise speciﬁed.

th mb-h

MODE OF OPERATION

(MHz)

(V)

(mA)

(W)

(dB)

CW, class-B 500 28 2 × 20 20 > 12

typ. 15

Ruggedness in class-B operation

The BLF544B is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases, under the following conditions: VDS= 28 V, f = 500 MHz at rated output power.

handbook, halfpage

(dB)

MDA517

(%)

handbook, halfpage

(W)

(%)

> 50

typ. 60

MDA516

010

Class-B operation; VDS= 28 V; IDQ=2×20 mA;

= 8.4 + j14.3 Ω; f = 500 MHz.

20 30

(W)

Fig.9 Power gain and efficiency as functions of

output power, typical values.

October 1992 6

Class-B operation; VDS= 28 V; IDQ=2×20 mA;

= 8.4 + j14.3 Ω; f = 500 MHz.

0.4 2

0.8 1.2 1.6 PIN (W)

Fig.10 Load power as a function of input power,

typical values.

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Philips Semiconductors Product speciﬁcation

UHF push-pull power MOS transistor BLF544B

handbook, full pagewidth

50 Ω input

C14

C18

C15

L16

L14

L18 L22 L26

C20 C21 C22

L19 L23 L25

L15

L17

C16

C19

L24

MBK460

C23

C24

L28

L27

50 Ω

output

R8 R9

BIAS

L12L10

C6 C7C5

L9 L11 L13

C10

C11

C12

C13

R7 L20

D.U.T.

BLF544B

R11 L21

C17

f = 500 MHz.

Fig.11 Test circuit for class-B operation.

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Philips Semiconductors Product speciﬁcation

UHF push-pull power MOS transistor BLF544B

List of components (class-B test circuit)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C2 multilayer ceramic chip capacitor

(note 1)

C3, C4, C6 multilayer ceramic chip capacitor

(note 1) C5 ﬁlm dielectric trimmer 2 to 9 pF 2222 809 09005 C7, C21, C22 ﬁlm dielectric trimmer 2 to 18 pF 2222 809 09006 C8, C9, C15, C16 multilayer ceramic chip capacitor

(note 1) C10, C13 multilayer ceramic chip capacitor 2 × 100 nF in

C11, C12, C14, C17 multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104 C18, C19 electrolytic capacitor 10 µF, 63 V 2222 030 38109 C20 multilayer ceramic chip capacitor

(note 1) C23, C24 multilayer ceramic chip capacitor

(note 1) L1, L3, L26, L28 stripline (note 2) 50 Ω 56 × 2.4 mm L2 semi-rigid cable (note 3) 50 Ω ext. dia. 2.2 mm

L4, L5 stripline (note 2) 56 Ω 8 × 2 mm L6, L7 stripline (note 2) 56 Ω 15.5 × 2mm L8, L9 stripline (note 2) 42 Ω 10 × 3mm L10, L11 stripline (note 2) 42 Ω 5 × 3mm L12, L13, L14, L15 stripline (note 2) 42 Ω 6 × 3mm L16, L17 6 turns enamelled 1 mm copper

wire

L18, L19 stripline (note 2) 56 Ω 22 × 2mm L20, L21 grade 3B Ferroxcube RF choke 4312 020 36642 L22, L23 stripline (note 2) 56 Ω 18 × 2mm L24, L25 stripline (note 2) 56 Ω 16 × 2mm L27 semi-rigid cable (note 3) 50 Ω ext. dia. 2.2 mm

R1 0.4 W metal ﬁlm resistor 5.62 Ω 2322 151 75628 R2, R8 0.4 W metal ﬁlm resistor 11.5 kΩ 2322 151 71159 R3, R9 10 turns potentiometer 5 kΩ R4, R7 0.4 W metal ﬁlm resistor 590 Ω 2322 151 75901 R5, R6 0.4 W metal ﬁlm resistor 46.4 Ω 2322 151 74649 R10, R11 1 W metal ﬁlm resistor 10 Ω 2322 153 51009

9.1 pF, 500 V

18 pF, 500 V

390 pF, 500 V

2222 852 47104

parallel, 50 V

6.8 pF, 500 V

16 pF, 500 V

ext. conductor length 56 mm

124 nH length 8.5 mm

int. dia. 5.4 mm leads 2 × 5mm

ext. conductor length 56 mm

October 1992 8

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Philips Semiconductors Product speciﬁcation

UHF push-pull power MOS transistor BLF544B

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with epoxy glass dielectric (εr= 2.2), thickness1⁄32inch.

3. Semi-rigid cables L2 and L27 are soldered on to striplines L1 and L26.

200

handbook, full pagewidth

mounting screw

L1 + L2

rivet

mounting screw

straps

C20 C21

C18

L20

L21 C19

R10

R11

L22 L23

C14

L26 + L27

C23

L24 L25

C22

C24

C17

C10

L12 L13

L14 L15

C15

L16

L18 L19

L17

C16

C11

L10

L4 L5

C6 C7

L11

C12

C13

strap

L28

MDA514

The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as a ground. Earth connections are made by means of copper straps and hollow rivets for a direct contact between the upper and lower sheets.

Dimensions in mm.

Fig.12 Component layout for 500 MHz test circuit.

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Philips Semiconductors Product speciﬁcation

UHF push-pull power MOS transistor BLF544B

handbook, halfpage

(Ω)

−10

−20

−30

Class-B operation; VDS= 28 V; IDQ=2×20 mA; PL=20W.

200 400 600

MDA492

f (MHz)

Fig.13 Input impedance as a function of frequency

(series components), typical values per section.

handbook, halfpage

(Ω)

Class-B operation; VDS= 28 V; IDQ=2×20 mA; PL=20W.

200 400 600

MDA494

f (MHz)

Fig.14 Load impedance as a function of frequency

(series components), typical values per section.

handbook, halfpage

(dB)

Class-B operation; VDS= 28 V; IDQ=2×20 mA;

=20W.

200

400 600

f (MHz)

Fig.15 Power gain as a function of frequency,

typical values per section.

MDA493

October 1992 10

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Philips Semiconductors Product speciﬁcation

UHF push-pull power MOS transistor BLF544B

PACKAGE OUTLINE

Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT268A

U2H

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

1.66

1.39

0.13

0.07

0.005

0.003

12.96

12.44

0.510

0.490

6.48

6.22

0.255

0.245

6.45

0.254

2.04

1.77

0.080

0.070

UNIT

inches

4.91

4.19

0.193

0.165

0.065

0.055

0 5 10 mm

scale

17.02

8.23

16.00

7.72

0.670

0.324

0.630

0.304

3.43

3.17

0.135

0.125

2.67

2.41

0.105

0.095

24.90

18.42

24.63

0.980

0.970

6.61

6.35

0.260

0.250

0.260.51 1.02

0.010.02 0.040.725

OUTLINE VERSION

SOT268A 97-06-28

IEC JEDEC EIAJ

REFERENCES

EUROPEAN

PROJECTION

October 1992 11

ISSUE DATE

Page 12

Philips Semiconductors Product speciﬁcation

UHF push-pull power MOS transistor BLF544B

DEFINITIONS

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

October 1992 12