Datasheet BLF544 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D076

BLF544

UHF power MOS transistor

Product specification
Supersedes data of October 1992

1998 Jan 21

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures excellent reliability

• Designed for broadband operation.

APPLICATIONS

• Communication transmitters in the UHF frequency
range.

DESCRIPTION

N-channel enhancement mode vertical D-MOS power
transistor encapsulated in a 6-lead, SOT171A flange
package with a ceramic cap. All leads are isolated from the
flange.
A marking code showing gate-source voltage (V

GS

)

information is provided for matched pair applications.

QUICK REFERENCE DATA

RF performance at T

=25°C in a common source class-B circuit.

h

PINNING - SOT171A

PIN SYMBOL DESCRIPTION

1 s source
2 s source
3 g gate
4 d drain
5 s source
6 s source

handbook, halfpage

Top view

6

g

12345

Fig.1 Simplified outline and symbol.

d
s

MAM390

MODE OF OPERATION

f

(MHz)

V

(V)

DS

P

(W)

L

G

p

(dB)

η

(%)

D

CW, class-B 500 28 20 >11 >50
CW, class-B 960 28 20 typ. 7 typ. 50

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1998 Jan 21 2

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-mb

R

th mb-h

drain-source voltage − 65 V
gate-source voltage −±20 V
drain current (DC) − 3.5 A
total power dissipation Tmb≤ 25 °C − 48 W
storage temperature −65 150 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base 3.7 K/W
thermal resistance from mounting base to heatsink 0.4 K/W

10

handbook, halfpage

I

D

(A)

(1)

1

−1

10

11010

(1) Current is this area may be limited by R
(2) Tmb=25°C.

Fig.2 DC SOAR.

(2)

VDS (V)

DSon.

MRA992

2

60

handbook, halfpage

P

tot

(W)

40

20

0

0

(1) Short-time operation during mismatch.
(2) Continuous operation.

40 80

(1)

(2)

Fig.3 Power/temperature derating curves.

120

MBK442

Th ( °C)

160

1998 Jan 21 3

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GSth

∆V

GSth

g

fs

R

DSon

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage VGS= 0; ID=10mA 65 −− V
drain-source leakage current VGS= 0; VDS=28V −−1mA
gate-source leakage current VGS= ±20 V; VDS=0 −−1 µA
gate-source threshold voltage ID= 40 mA; VDS=10V 1 − 4V
gate-source voltage difference of

ID= 40 mA; VDS=10V −−100 mV

matched pairs
forward transconductance ID= 1.2 A; VDS= 10 V 600 900 − mS
drain-source on-state resistance ID= 1.2 A; VGS=10V − 0.85 1.25 Ω
on-state drain current VGS= 15 V; VDS=10V − 4.8 − A
input capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 32 − pF
output capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 24 − pF
feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 6.4 − pF

handbook, halfpage

4

T.C

(mV/K)

2

0

−2

−4

−2

10

VDS=10V.

−1

10

110

ID (A)

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current; typical
values.

MDA504

handbook, halfpage

6

I

D

(A)

4

2

0

0

VDS=10V;Tj=25°C.

5

10 20

MDA505

15

V

(V)

GS

Fig.5 Drain current as a function of gate-source

voltage; typical values.

1998 Jan 21 4

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

handbook, halfpage

2

R

DSon

(Ω)

1.6

1.2

0.8

0.4

0

050

ID= 1.2A; VGS=10V.

100 150

Tj (°C)

Fig.6 Drain-source on-state resistance as a

function of junction temperature; typical
values.

MDA506

100

handbook, halfpage

C

(pF)

80

60

40

20

0

010

VGS= 0; f= 1 MHz.

20 30

MDA507

C
C

V

(V)

DS

Fig.7 Input and output capacitance as functions

of drain-source voltage; typical values.

is
os

40

handbook, halfpage

C

rs

(pF)

30

20

10

0

0102030

VGS= 0; f = 1 MHz.

VDS (V)

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values.

MDA508

1998 Jan 21 5

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

APPLICATION INFORMATION

T

=25°C; R

h

RF performance in a common source class-B circuit.

= 0.4 K/W unless otherwise specified.

th mb-h

MODE OF OPERATION

f

(MHz)

CW, class-B 500 28 40 20 >11

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

D

>50

typ. 14

typ. 60
CW, class-B 960 28 40 20 typ. 7 typ. 50
CW, class-B 960 24 40 15 typ. 7 typ. 50

Ruggedness in class-B operation

The BLF544 is capable of withstanding a full load mismatch corresponding to VSWR = 50 : 1 through all phases under
the following conditions: V

20

handbook, halfpage

G

p

(dB)

16

12

8

= 28 V; f = 500 MHz at rated output power.

DS

MDA512

80

η

D

(%)

G

p

η

D

60

handbook, halfpage

P

(W)

30

L

20

10

MDA513

4

0

10 30

Class-B operation; VDS= 28 V; IDQ=40mA;

= 4.3 + j6.3 Ω; f = 500 MHz.

Z

L

14 18

22

26

PL (W)

40

Fig.9 Power gain and efficiency as functions of

load power; typical values.

1998 Jan 21 6

0

0

Class-B operation; VDS= 28 V; IDQ=40mA;

= 4.3 + j6.3 Ω; f = 500 MHz.

Z

L

1

23

PIN (W)

Fig.10 Load power as a function of input power;

typical values.

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

handbook, full pagewidth

C14

L5

BLF544

L6

R5 L7

L8

C15 C16

C11

L9

C17

50 Ω

output

50 Ω
input

C1

D.U.T.

R1

L3L2

C10

C8C2
L4

C9

C4

L1

C3

C5

C6

f = 500 MHz

C12

C13

+V

D

C7

R3

R2

R4

Fig.11 Test circuit for class-B operation.

MDA502

1998 Jan 21 7

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

List of components (see Figs 11 and 12).

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C6, C11, C17 multilayer ceramic chip capacitor;

note 1

C2 multilayer ceramic chip capacitor;

note 2
C3, C5 film dielectric trimmer 2 to 9 pF 2222 809 09002
C4 multilayer ceramic chip capacitor;

note 2
C7 multilayer ceramic chip capacitor 2 × 100 nF in

C8, C9 multilayer ceramic chip capacitor;

note 2
C10, C12 multilayer ceramic chip capacitor 100 nF; 50 V 2222 852 47104
C13 electrolytic capacitor 4.7 µF; 63 V 2222 030 38478
C14 multilayer ceramic chip capacitor;

note 1
C15, C16 film dielectric trimmer 2 to 18 pF 2222 809 09003
L1 stripline note 3 50 Ω 9.5 × 2.5 mm
L2 stripline note 3 50 Ω 34.5 × 2.5 mm
L3 stripline note 3 50 Ω 17.5 × 2.5 mm
L4, L5 stripline note 3 42 Ω 3 × 3mm
L6 4 turns enamelled 0.8 mm copper

wire

L7 grade 3B Ferroxcube RF choke 4312 020 36642
L8 stripline note 3 50 Ω 22 × 2.5 mm
L9 stripline note 3 50 Ω 39.5 × 2.5 mm
R1, R2 0.4 W metal film resistor 1 kΩ 2322 151 11002
R3 10 turns cermet potentiometer 50 kΩ
R4 0.4 W metal film resistor 140 kΩ 2322 151 11404
R5 1 W metal film resistor 10 Ω 2322 153 51009

390 pF; 500 V

16 pF; 50 V

27 pF; 50 V

2222 852 47104

parallel; 50 V
39 pF

20 pF; 500 V

31 nH length 7.5 mm

int. dia. 3 mm
leads 2 × 5mm

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.

3. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (ε
thickness1⁄32inch.

1998 Jan 21 8

= 2.2);

r

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

handbook, full pagewidth

mounting screw

straps

C2

C1

L1 L2 L3

C3

straps

straps

R3

C7

R2

C10 C6

R1

C4

C8

C9

C5

150

L4

L5

rivets

+V

C13

C11

L6

L8 L9

C15

R5

L7

D

C12

C14

straps

70

mounting screw

C17

C16

Dimensions in mm.

The circuit and components are situated on one side of the printed circuit board, the other side being fully
metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets
for a direct contact between upper and lower sheets.

Fig.12 Component layout for 500 MHz class-B test circuit.

1998 Jan 21 9

MDA501

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

handbook, full pagewidth

50 Ω
input

f = 960 MHz.

C1

C13 C15 C17

D.U.T.

R1

C8C2

L4

L3L2

C9

C7

C4

L1

C3

C5

C6

R2 R3

L5

BLF544

L6

C11

R4 L7

C10

C12

+V

L8

D

L9 L10

C16C14 C18

MDA503

C19

50 Ω

output

Fig.13 Test circuit for class-B operation.

1998 Jan 21 10

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

List of components (see Figs 12 and 13)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1 multilayer ceramic chip capacitor;

note 1

C2 multilayer ceramic chip capacitor;

note 2
C3, C5, C16, C18 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09001
C4 multilayer ceramic chip capacitor;

note 2
C6 multilayer ceramic chip capacitor 10 nF; 50 V 2222 852 47103
C7, C11 multilayer ceramic chip capacitor;

note 1
C8, C9, C15, C17 multilayer ceramic chip capacitor

note 2
C10 multilayer ceramic chip capacitor 100 nF; 50 V 2222 852 47104
C12 electrolytic capacitor 4.7 µF; 63 V 2222 030 38478
C13 multilayer ceramic chip capacitor;

note 2
C14 multilayer ceramic chip capacitor;

note 2
C19 multilayer ceramic chip capacitor;

note 1
L1, L8 stripline; note 3 50 Ω 6 × 2.5 mm
L2 stripline; note 3 50 Ω 38 × 2.5 mm
L3 stripline; note 3 50 Ω 17.5 × 2.5 mm
L4, L5 stripline; note 3 42 Ω 3 × 3mm
L6 2 turns enamelled 1 mm copper

wire

L7 grade 3B Ferroxcube RF choke 4312 020 36642
L9 stripline; note 3 50 Ω 21 × 2.5 mm
L10 stripline; note 3 50 Ω 34.5 × 2.5 mm
R1 0.4 W metal film resistor 15 kΩ 2322 151 11473
R2 10 turns potentiometer 50 kΩ
R3 0.4 W metal film resistor 140 kΩ 2322 151 11404
R4 0.4 W metal film resistor 10 Ω 2322 153 51009

68 pF; 500 V

1.6 pF; 50 V

1 pF; 50 V

56 µF; 500 V

6.8 µF; 50 V

16 pF; 50 V

18 pF; 50 V

62 pF; 500 V

16 nH length 3.4 mm

int. dia. 3 mm
leads 2 × 5mm

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.

3. The striplines are on a double copper-clad printed-circuit board with glass microfibre reinforced PTFE (ε
thickness1⁄32 inch.

1998 Jan 21 11

= 2.2);

r

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

handbook, halfpage

5

Z

i

(Ω)

0

−5

−10

−15

0

Class-B operation; VDS= 28 V; IDQ= 40 mA; PL=20W.

r

i

x

i

200 400 600

MDA509

f (MHz)

Fig.14 Input impedance as a function of frequency

(series components); typical values.

20

handbook, halfpage

Z

L

(Ω)

15

10

5

0

0

Class-B operation; VDS= 28 V; IDQ= 40 mA; PL=20W.

R

L

X

L

200 400 600

MDA510

f (MHz)

Fig.15 Load impedance as a function of frequency

(series components); typical values.

30

handbook, halfpage

G

p

(dB)

20

10

0

0

Class-B operation; VDS= 28 V; IDQ= 40 mA; PL=20W.

200

400 600

f (MHz)

Fig.16 Power gain as a function of frequency;

typical values.

MDA511

Optimum input and load impedances

Optimum input impedance: 1.2 + j4.8 Ω.
Optimum load impedance: 2.6 − j3.1 Ω.
Conditions: class-B operation; VDS=24V;
IDQ= 40 mA; f = 960 MHz; PL= 15 W; typical values.

1998 Jan 21 12

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 6 leads SOT171A

D

A

F

D

1

U

1

q

H

1

b

1

2

H

U

2

Db

9.25

9.04

0.364

0.356

1

D

1

9.30

8.99

0.366

0.354

5.95

5.74

0.234

0.226

A

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

6.81

6.07

0.268

0.239

2.15

1.85

0.085

0.073

b

1

3.20

2.89

0.126

0.114

c

0.16

0.07

0.006

0.003

6

345

b

e

0 5 10 mm

E

E

1

6.00

5.70

0.236

0.224

e

3.58

0.140

scale

0.120

0.100

C

w

M

C

2

p

w

M

3

F

H

11.31

3.05

10.54

2.54

0.445

0.415

w

H

9.27

9.01

0.365

0.355

B

1

1

M

3.43

3.17

0.135

0.125

AB

p

c

E

1

Q

qw

18.42

U

1

24.90

24.63

0.980

0.970

0.236

0.224

Q

4.32

4.11

0.170

0.162

E

w

U

6.00

5.70

2

2

1

0.260.51 1.02

0.010.02 0.040.725

w

3

OUTLINE
VERSION

SOT171A 97-06-28

IEC JEDEC EIAJ

REFERENCES

EUROPEAN

PROJECTION

1998 Jan 21 13

ISSUE DATE

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Jan 21 14

Philips Semiconductors Product specification

UHF power MOS transistor BLF544

NOTES

1998 Jan 21 15

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© Philips Electronics N.V. 1998 SCA57
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Printed in The Netherlands 127067/00/02/pp16 Date of release: 1998 Jan 21 Document order number: 9397 750 03117