Datasheet BLF544 Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D076
BLF544
UHF power MOS transistor
Product specification Supersedes data of October 1992
1998 Jan 21
Page 2
Philips Semiconductors Product specification
UHF power MOS transistor BLF544
FEATURES
High power gain
Easy power control
Good thermal stability
Gold metallization ensures excellent reliability
Designed for broadband operation.
APPLICATIONS
Communication transmitters in the UHF frequency range.
DESCRIPTION
N-channel enhancement mode vertical D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the flange. A marking code showing gate-source voltage (V
GS
)
information is provided for matched pair applications.
QUICK REFERENCE DATA
RF performance at T
=25°C in a common source class-B circuit.
h
PINNING - SOT171A
PIN SYMBOL DESCRIPTION
1 s source 2 s source 3 g gate 4 d drain 5 s source 6 s source
handbook, halfpage
Top view
6
g
12345
Fig.1 Simplified outline and symbol.
d s
MAM390
MODE OF OPERATION
f
(MHz)
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
D
CW, class-B 500 28 20 >11 >50 CW, class-B 960 28 20 typ. 7 typ. 50
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
Page 3
Philips Semiconductors Product specification
UHF power MOS transistor BLF544
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GS
I
D
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-mb
R
th mb-h
drain-source voltage 65 V gate-source voltage −±20 V drain current (DC) 3.5 A total power dissipation Tmb≤ 25 °C 48 W storage temperature 65 150 °C junction temperature 200 °C
thermal resistance from junction to mounting base 3.7 K/W thermal resistance from mounting base to heatsink 0.4 K/W
10
handbook, halfpage
I
D
(A)
(1)
1
1
10
11010
(1) Current is this area may be limited by R (2) Tmb=25°C.
Fig.2 DC SOAR.
(2)
VDS (V)
DSon.
MRA992
2
60
handbook, halfpage
P
tot
(W)
40
20
0
0
(1) Short-time operation during mismatch. (2) Continuous operation.
40 80
(1)
(2)
Fig.3 Power/temperature derating curves.
120
MBK442
Th ( °C)
160
Page 4
Philips Semiconductors Product specification
UHF power MOS transistor BLF544
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GSth
V
GSth
g
fs
R
DSon
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage VGS= 0; ID=10mA 65 −− V drain-source leakage current VGS= 0; VDS=28V −−1mA gate-source leakage current VGS= ±20 V; VDS=0 −−1 µA gate-source threshold voltage ID= 40 mA; VDS=10V 1 4V gate-source voltage difference of
ID= 40 mA; VDS=10V −−100 mV
matched pairs forward transconductance ID= 1.2 A; VDS= 10 V 600 900 mS drain-source on-state resistance ID= 1.2 A; VGS=10V 0.85 1.25 on-state drain current VGS= 15 V; VDS=10V 4.8 A input capacitance VGS= 0; VDS= 28 V; f = 1 MHz 32 pF output capacitance VGS= 0; VDS= 28 V; f = 1 MHz 24 pF feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz 6.4 pF
handbook, halfpage
4
T.C
(mV/K)
2
0
2
4
2
10
VDS=10V.
1
10
110
ID (A)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current; typical values.
MDA504
handbook, halfpage
6
I
D
(A)
4
2
0
0
VDS=10V;Tj=25°C.
5
10 20
MDA505
15
V
(V)
GS
Fig.5 Drain current as a function of gate-source
voltage; typical values.
Page 5
Philips Semiconductors Product specification
UHF power MOS transistor BLF544
handbook, halfpage
2
R
DSon
()
1.6
1.2
0.8
0.4
0
050
ID= 1.2A; VGS=10V.
100 150
Tj (°C)
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical values.
MDA506
100
handbook, halfpage
C
(pF)
80
60
40
20
0
010
VGS= 0; f= 1 MHz.
20 30
MDA507
C C
V
(V)
DS
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values.
is os
40
handbook, halfpage
C
rs
(pF)
30
20
10
0
0102030
VGS= 0; f = 1 MHz.
VDS (V)
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values.
MDA508
Page 6
Philips Semiconductors Product specification
UHF power MOS transistor BLF544
APPLICATION INFORMATION
T
=25°C; R
h
RF performance in a common source class-B circuit.
= 0.4 K/W unless otherwise specified.
th mb-h
MODE OF OPERATION
f
(MHz)
CW, class-B 500 28 40 20 >11
V
(V)
DS
I
DQ
(mA)
P
(W)
L
G
p
(dB)
η
(%)
D
>50
typ. 14
typ. 60 CW, class-B 960 28 40 20 typ. 7 typ. 50 CW, class-B 960 24 40 15 typ. 7 typ. 50
Ruggedness in class-B operation
The BLF544 is capable of withstanding a full load mismatch corresponding to VSWR = 50 : 1 through all phases under the following conditions: V
20
handbook, halfpage
G
p
(dB)
16
12
8
= 28 V; f = 500 MHz at rated output power.
DS
MDA512
80
η
D
(%)
G
p
η
D
60
handbook, halfpage
P
(W)
30
L
20
10
MDA513
4
0
10 30
Class-B operation; VDS= 28 V; IDQ=40mA;
= 4.3 + j6.3 ; f = 500 MHz.
Z
L
14 18
22
26
PL (W)
40
Fig.9 Power gain and efficiency as functions of
load power; typical values.
0
0
Class-B operation; VDS= 28 V; IDQ=40mA;
= 4.3 + j6.3 ; f = 500 MHz.
Z
L
1
23
PIN (W)
Fig.10 Load power as a function of input power;
typical values.
Page 7
Philips Semiconductors Product specification
UHF power MOS transistor BLF544
handbook, full pagewidth
C14
L5
BLF544
L6
R5 L7
L8
C15 C16
C11
L9
C17
50
output
50 input
C1
D.U.T.
R1
L3L2
C10
C8C2 L4
C9
C4
L1
C3
C5
C6
f = 500 MHz
C12
C13
+V
D
C7
R3
R2
R4
Fig.11 Test circuit for class-B operation.
MDA502
Page 8
Philips Semiconductors Product specification
UHF power MOS transistor BLF544
List of components (see Figs 11 and 12).
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C6, C11, C17 multilayer ceramic chip capacitor;
note 1
C2 multilayer ceramic chip capacitor;
note 2 C3, C5 film dielectric trimmer 2 to 9 pF 2222 809 09002 C4 multilayer ceramic chip capacitor;
note 2 C7 multilayer ceramic chip capacitor 2 × 100 nF in
C8, C9 multilayer ceramic chip capacitor;
note 2 C10, C12 multilayer ceramic chip capacitor 100 nF; 50 V 2222 852 47104 C13 electrolytic capacitor 4.7 µF; 63 V 2222 030 38478 C14 multilayer ceramic chip capacitor;
note 1 C15, C16 film dielectric trimmer 2 to 18 pF 2222 809 09003 L1 stripline note 3 50 9.5 × 2.5 mm L2 stripline note 3 50 34.5 × 2.5 mm L3 stripline note 3 50 17.5 × 2.5 mm L4, L5 stripline note 3 42 3 × 3mm L6 4 turns enamelled 0.8 mm copper
wire
L7 grade 3B Ferroxcube RF choke 4312 020 36642 L8 stripline note 3 50 22 × 2.5 mm L9 stripline note 3 50 39.5 × 2.5 mm R1, R2 0.4 W metal film resistor 1 k 2322 151 11002 R3 10 turns cermet potentiometer 50 k R4 0.4 W metal film resistor 140 k 2322 151 11404 R5 1 W metal film resistor 10 2322 153 51009
390 pF; 500 V
16 pF; 50 V
27 pF; 50 V
2222 852 47104
parallel; 50 V 39 pF
20 pF; 500 V
31 nH length 7.5 mm
int. dia. 3 mm leads 2 × 5mm
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
3. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (ε thickness1⁄32inch.
= 2.2);
r
Page 9
Philips Semiconductors Product specification
UHF power MOS transistor BLF544
handbook, full pagewidth
mounting screw
straps
C2
C1
L1 L2 L3
C3
straps
straps
R3
C7
R2
C10 C6
R1
C4
C8
C9
C5
150
L4
L5
rivets
+V
C13
C11
L6
L8 L9
C15
R5
L7
D
C12
C14
straps
70
mounting screw
C17
C16
Dimensions in mm.
The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
Fig.12 Component layout for 500 MHz class-B test circuit.
MDA501
Page 10
Philips Semiconductors Product specification
UHF power MOS transistor BLF544
handbook, full pagewidth
50 input
f = 960 MHz.
C1
C13 C15 C17
D.U.T.
R1
C8C2
L4
L3L2
C9
C7
C4
L1
C3
C5
C6
R2 R3
L5
BLF544
L6
C11
R4 L7
C10
C12
+V
L8
D
L9 L10
C16C14 C18
MDA503
C19
50
output
Fig.13 Test circuit for class-B operation.
1998 Jan 21 10
Page 11
Philips Semiconductors Product specification
UHF power MOS transistor BLF544
List of components (see Figs 12 and 13)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1 multilayer ceramic chip capacitor;
note 1
C2 multilayer ceramic chip capacitor;
note 2 C3, C5, C16, C18 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09001 C4 multilayer ceramic chip capacitor;
note 2 C6 multilayer ceramic chip capacitor 10 nF; 50 V 2222 852 47103 C7, C11 multilayer ceramic chip capacitor;
note 1 C8, C9, C15, C17 multilayer ceramic chip capacitor
note 2 C10 multilayer ceramic chip capacitor 100 nF; 50 V 2222 852 47104 C12 electrolytic capacitor 4.7 µF; 63 V 2222 030 38478 C13 multilayer ceramic chip capacitor;
note 2 C14 multilayer ceramic chip capacitor;
note 2 C19 multilayer ceramic chip capacitor;
note 1 L1, L8 stripline; note 3 50 6 × 2.5 mm L2 stripline; note 3 50 38 × 2.5 mm L3 stripline; note 3 50 17.5 × 2.5 mm L4, L5 stripline; note 3 42 3 × 3mm L6 2 turns enamelled 1 mm copper
wire
L7 grade 3B Ferroxcube RF choke 4312 020 36642 L9 stripline; note 3 50 21 × 2.5 mm L10 stripline; note 3 50 34.5 × 2.5 mm R1 0.4 W metal film resistor 15 k 2322 151 11473 R2 10 turns potentiometer 50 k R3 0.4 W metal film resistor 140 k 2322 151 11404 R4 0.4 W metal film resistor 10 2322 153 51009
68 pF; 500 V
1.6 pF; 50 V
1 pF; 50 V
56 µF; 500 V
6.8 µF; 50 V
16 pF; 50 V
18 pF; 50 V
62 pF; 500 V
16 nH length 3.4 mm
int. dia. 3 mm leads 2 × 5mm
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
3. The striplines are on a double copper-clad printed-circuit board with glass microfibre reinforced PTFE (ε thickness1⁄32 inch.
1998 Jan 21 11
= 2.2);
r
Page 12
Philips Semiconductors Product specification
UHF power MOS transistor BLF544
handbook, halfpage
5
Z
i
()
0
5
10
15
0
Class-B operation; VDS= 28 V; IDQ= 40 mA; PL=20W.
r
i
x
i
200 400 600
MDA509
f (MHz)
Fig.14 Input impedance as a function of frequency
(series components); typical values.
20
handbook, halfpage
Z
L
()
15
10
5
0
0
Class-B operation; VDS= 28 V; IDQ= 40 mA; PL=20W.
R
L
X
L
200 400 600
MDA510
f (MHz)
Fig.15 Load impedance as a function of frequency
(series components); typical values.
30
handbook, halfpage
G
p
(dB)
20
10
0
0
Class-B operation; VDS= 28 V; IDQ= 40 mA; PL=20W.
200
400 600
f (MHz)
Fig.16 Power gain as a function of frequency;
typical values.
MDA511
Optimum input and load impedances
Optimum input impedance: 1.2 + j4.8 . Optimum load impedance: 2.6 j3.1 . Conditions: class-B operation; VDS=24V; IDQ= 40 mA; f = 960 MHz; PL= 15 W; typical values.
1998 Jan 21 12
Page 13
Philips Semiconductors Product specification
UHF power MOS transistor BLF544
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 6 leads SOT171A
D
A
F
D
1
U
1
q
H
1
b
1
2
H
U
2
Db
9.25
9.04
0.364
0.356
1
D
1
9.30
8.99
0.366
0.354
5.95
5.74
0.234
0.226
A
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
inches
A
6.81
6.07
0.268
0.239
2.15
1.85
0.085
0.073
b
1
3.20
2.89
0.126
0.114
c
0.16
0.07
0.006
0.003
6
345
b
e
0 5 10 mm
E
E
1
6.00
5.70
0.236
0.224
e
3.58
0.140
scale
0.120
0.100
C
w
M
C
2
p
w
M
3
F
H
11.31
3.05
10.54
2.54
0.445
0.415
w
H
9.27
9.01
0.365
0.355
B
1
1
M
3.43
3.17
0.135
0.125
AB
p
c
E
1
Q
qw
18.42
U
1
24.90
24.63
0.980
0.970
0.236
0.224
Q
4.32
4.11
0.170
0.162
E
w
U
6.00
5.70
2
2
1
0.260.51 1.02
0.010.02 0.040.725
w
3
OUTLINE VERSION
SOT171A 97-06-28
IEC JEDEC EIAJ
REFERENCES
EUROPEAN
PROJECTION
1998 Jan 21 13
ISSUE DATE
Page 14
Philips Semiconductors Product specification
UHF power MOS transistor BLF544
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Jan 21 14
Page 15
Philips Semiconductors Product specification
UHF power MOS transistor BLF544
NOTES
1998 Jan 21 15
Page 16
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Printed in The Netherlands 127067/00/02/pp16 Date of release: 1998 Jan 21 Document order number: 9397 750 03117
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