• Communication transmitters in the UHF frequency
range.
DESCRIPTION
N-channel enhancement mode vertical D-MOS power
transistor encapsulated in a 6-lead, SOT171A flange
package with a ceramic cap. All leads are isolated from the
flange.
A marking code showing gate-source voltage (V
GS
)
information is provided for matched pair applications.
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1998 Jan 212
Page 3
Philips SemiconductorsProduct specification
UHF power MOS transistorBLF544
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
V
DS
V
GS
I
D
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOLPARAMETERVALUEUNIT
R
th j-mb
R
th mb-h
drain-source voltage−65V
gate-source voltage−±20V
drain current (DC)−3.5A
total power dissipationTmb≤ 25 °C−48W
storage temperature−65150°C
junction temperature−200°C
thermal resistance from junction to mounting base3.7K/W
thermal resistance from mounting base to heatsink0.4K/W
10
handbook, halfpage
I
D
(A)
(1)
1
−1
10
11010
(1) Current is this area may be limited by R
(2) Tmb=25°C.
Fig.2 DC SOAR.
(2)
VDS (V)
DSon.
MRA992
2
60
handbook, halfpage
P
tot
(W)
40
20
0
0
(1) Short-time operation during mismatch.
(2) Continuous operation.
4080
(1)
(2)
Fig.3 Power/temperature derating curves.
120
MBK442
Th ( °C)
160
1998 Jan 213
Page 4
Philips SemiconductorsProduct specification
UHF power MOS transistorBLF544
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GSth
∆V
GSth
g
fs
R
DSon
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltageVGS= 0; ID=10mA65−− V
drain-source leakage currentVGS= 0; VDS=28V−−1mA
gate-source leakage currentVGS= ±20 V; VDS=0−−1 µA
gate-source threshold voltageID= 40 mA; VDS=10V1−4V
gate-source voltage difference of
note 1
C15, C16film dielectric trimmer2 to 18 pF2222 809 09003
L1stripline note 350 Ω9.5 × 2.5 mm
L2stripline note 350 Ω34.5 × 2.5 mm
L3stripline note 350 Ω17.5 × 2.5 mm
L4, L5stripline note 342 Ω3 × 3mm
L64 turns enamelled 0.8 mm copper
wire
L7grade 3B Ferroxcube RF choke4312 020 36642
L8stripline note 350 Ω22 × 2.5 mm
L9stripline note 350 Ω39.5 × 2.5 mm
R1, R20.4 W metal film resistor1 kΩ2322 151 11002
R310 turns cermet potentiometer50 kΩ
R40.4 W metal film resistor140 kΩ2322 151 11404
R51 W metal film resistor10 Ω2322 153 51009
390 pF; 500 V
16 pF; 50 V
27 pF; 50 V
2222 852 47104
parallel; 50 V
39 pF
20 pF; 500 V
31 nHlength 7.5 mm
int. dia. 3 mm
leads 2 × 5mm
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
3. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (ε
thickness1⁄32inch.
1998 Jan 218
= 2.2);
r
Page 9
Philips SemiconductorsProduct specification
UHF power MOS transistorBLF544
handbook, full pagewidth
mounting screw
straps
C2
C1
L1L2L3
C3
straps
straps
R3
C7
R2
C10C6
R1
C4
C8
C9
C5
150
L4
L5
rivets
+V
C13
C11
L6
L8L9
C15
R5
L7
D
C12
C14
straps
70
mounting screw
C17
C16
Dimensions in mm.
The circuit and components are situated on one side of the printed circuit board, the other side being fully
metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets
for a direct contact between upper and lower sheets.
Fig.12 Component layout for 500 MHz class-B test circuit.
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
inches
A
6.81
6.07
0.268
0.239
2.15
1.85
0.085
0.073
b
1
3.20
2.89
0.126
0.114
c
0.16
0.07
0.006
0.003
6
345
b
e
0510 mm
E
E
1
6.00
5.70
0.236
0.224
e
3.58
0.140
scale
0.120
0.100
C
w
M
C
2
p
w
M
3
F
H
11.31
3.05
10.54
2.54
0.445
0.415
w
H
9.27
9.01
0.365
0.355
B
1
1
M
3.43
3.17
0.135
0.125
AB
p
c
E
1
Q
qw
18.42
U
1
24.90
24.63
0.980
0.970
0.236
0.224
Q
4.32
4.11
0.170
0.162
E
w
U
6.00
5.70
2
2
1
0.260.51 1.02
0.010.02 0.040.725
w
3
OUTLINE
VERSION
SOT171A97-06-28
IEC JEDEC EIAJ
REFERENCES
EUROPEAN
PROJECTION
1998 Jan 2113
ISSUE DATE
Page 14
Philips SemiconductorsProduct specification
UHF power MOS transistorBLF544
DEFINITIONS
Data sheet status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jan 2114
Page 15
Philips SemiconductorsProduct specification
UHF power MOS transistorBLF544
NOTES
1998 Jan 2115
Page 16
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
Printed in The Netherlands127067/00/02/pp16 Date of release: 1998 Jan 21Document order number: 9397 750 03117
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