Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the UHF
frequency range.
The transistor is encapsulated in a
6-lead, SOT171 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
The devices are marked with a
V
indication intended for matched
GS
pair applications.
PINNING - SOT171
PINDESCRIPTION
1source
2source
3gate
4drain
5source
6source
PIN CONFIGURATION
page
1
3
5
Top view
2
4
6
MBA931 - 1
g
MBB072
d
s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
In accordance with the Absolute Maximum System (IEC 134).
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOLPARAMETERTHERMAL RESISTANCE
R
th j-mb
R
th mb-h
drain-source voltage−65V
gate-source voltage−20V
DC drain current−2A
total power dissipationup to Tmb=25°C−25W
storage temperature−65150°C
junction temperature−200°C
thermal resistance from junction to mounting base7 K/W
thermal resistance from mounting base to heatsink0.4 K/W
10
handbook, halfpage
I
D
(A)
1
−1
10
(1) Current in this area may be limited by R
(2) Tmb=25°C.
(1)
11010
Fig.2 DC SOAR.
(2)
VDS (V)
.
DS(on)
MRA991
2
40
handbook, halfpage
P
tot
(W)
30
20
10
0
04080160
(1) Continuous operation.
(2) Short-time operation during mismatch.
wire
L2stripline (note 2)42.5 Ω14.5 × 3 mm
L3, L4stripline (note 2)42.5 Ω6 × 3 mm
L57 turns enamelled 1 mm copper
wire
L6grade 3B Ferroxcube RF choke4312 020 36640
L7stripline (note 2)55.7 Ω31 × 2 mm
L81 turn enamelled 1 mm copper wire 8 nHint. dia. 3.2 mm
R1, R20.4 W metal film resistor1 kΩ2322 151 71002
R310 turns cermet potentiometer5 kΩ
R40.4 W metal film resistor19.6 kΩ2322 151 71963
R51 W metal film resistor10 Ω2322 153 51009
390 pF
7.5 pF
20 pF
2222 852 47104
parallel, 50 V
22 pF
11 nHint. dia. 4.7 mm
leads 2 × 5 mm
124 nHlength 7.8 mm
int. dia. 4 mm
leads 2 × 5 mm
leads 2 × 5 mm
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (ε
thickness1⁄32inch.
October 19928
= 2.2);
r
Page 9
Philips SemiconductorsProduct specification
UHF power MOS transistorBLF543
handbook, full pagewidth
mounting screw
+V
6
mm
rivet
strapstrap
G
R4
R5
+V
D
52 mm59 mm
R3
70 mm
C7
R2
C4C2
C1
The circuit and components are situated on one side of the printed circuit board, the other side being fully
metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets
for a direct contact between upper and lower sheets.
L1
L2L7
C8
C6
R1
BLF543
C9
L4L3
L6
L5
C10
C12
C13C15C3C5
Fig.12 Component layout for 500 MHz class-B test circuit.
C11
C14
L8C16
MDA487
October 19929
Page 10
Philips SemiconductorsProduct specification
UHF power MOS transistorBLF543
handbook, full pagewidth
C14
L5
L6
L8L9L8
C10
C11
C17
C16C15
50 Ω
output
50 Ω
input
L1L2L3
C1
C3
C4
C5
R3
C6C2
L4
C7
C8
D.U.T.
BLF543
C9
R2R1
R4L10
C12
C13
+V
D
MDA499
Fig.13 Test circuit for class-B operation at 960 MHz.
October 199210
Page 11
Philips SemiconductorsProduct specification
UHF power MOS transistorBLF543
List of components (class-B test circuit at 960 MHz)
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
inches
A
6.81
6.07
0.268
0.239
2.15
1.85
0.085
0.073
b
1
3.20
2.89
0.126
0.114
c
0.16
0.07
0.006
0.003
6
345
b
e
0510 mm
E
0.236
0.224
E
6.00
5.70
e
1
3.58
0.140
scale
C
w
M
C
2
p
w
M
3
F
H
11.31
3.05
10.54
2.54
0.445
0.120
0.415
0.100
B
w
H
1
9.27
9.01
0.365
0.355
c
E
1
M
AB
1
Q
qw
18.42
U
1
24.90
24.63
0.980
0.970
6.00
5.70
0.236
0.224
p
3.43
3.17
0.135
0.125
Q
4.32
4.11
0.170
0.162
E
w
U
2
2
1
w
3
0.260.51 1.02
0.010.02 0.040.725
OUTLINE
VERSION
SOT171A97-06-28
IEC JEDEC EIAJ
REFERENCES
EUROPEAN
PROJECTION
October 199213
ISSUE DATE
Page 14
Philips SemiconductorsProduct specification
UHF power MOS transistorBLF543
DEFINITIONS
Data Sheet Status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
October 199214
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