Datasheet BLF543 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLF543

UHF power MOS transistor

Product specification

October 1992

Philips Semiconductors Product specification

UHF power MOS transistor BLF543

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures

excellent reliability

• Designed for broadband operation.

DESCRIPTION

Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the UHF
frequency range.

The transistor is encapsulated in a
6-lead, SOT171 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.

The devices are marked with a
V

indication intended for matched

GS

pair applications.

PINNING - SOT171

PIN DESCRIPTION

1 source
2 source
3 gate
4 drain
5 source
6 source

PIN CONFIGURATION

page

1

3
5

Top view

2

4
6

MBA931 - 1

g

MBB072

d

s

Fig.1 Simplified outline and symbol.

CAUTION

The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

= 25 °C in a common source class-B circuit.

h

f

(MHz)

V

(V)

DS

P

(W)

L

G

p

(dB)

η

(%)

CW, class-B 500 28 10 > 12 > 50
CW, class-B 960 28 10 typ. 8 typ. 50

October 1992 2

D

Philips Semiconductors Product specification

UHF power MOS transistor BLF543

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

±V

GS

I

D

P

tot

T

stg

T

j

THERMAL RESISTANCE

SYMBOL PARAMETER THERMAL RESISTANCE

R

th j-mb

R

th mb-h

drain-source voltage − 65 V
gate-source voltage − 20 V
DC drain current − 2A
total power dissipation up to Tmb=25°C − 25 W
storage temperature −65 150 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base 7 K/W
thermal resistance from mounting base to heatsink 0.4 K/W

10

handbook, halfpage

I

D

(A)

1

−1

10

(1) Current in this area may be limited by R
(2) Tmb=25°C.

(1)

11010

Fig.2 DC SOAR.

(2)

VDS (V)

.

DS(on)

MRA991

2

40

handbook, halfpage

P

tot

(W)

30

20

10

0

0 40 80 160

(1) Continuous operation.
(2) Short-time operation during mismatch.

(1)

(2)

Fig.3 Power/temperature derating curves.

120

MDA488

Th (°C)

October 1992 3

Philips Semiconductors Product specification

UHF power MOS transistor BLF543

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

∆V

GS(th)

g

fs

R

DS(on)

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage VGS= 0; ID = 5 mA 65 −−V
drain-source leakage current VGS= 0; VDS= 28 V −−0.5 mA
gate-source leakage current ±VGS= 20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 20 mA; VDS= 10 V 1 − 4V
gate-source voltage difference of

ID= 20 mA; VDS= 10 V −−100 mV

matched pairs
forward transconductance ID= 0.6 A; VDS= 10 V 300 450 − mS
drain-source on-state resistance ID= 0.6 A; VGS= 10 V − 1.7 2.5 Ω
on-state drain current VGS= 15 V; VDS= 10 V − 2.4 − A
input capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 16 − pF
output capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 12 − pF
feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 3.2 − pF

handbook, halfpage

4

T.C.

(mV/K)

2

0

−2

−4

10

VDS= 10 V.

−2

−1

10

ID (A)

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current, typical
values.

MDA491

handbook, halfpage

1

3

I

D

(A)

2

1

0

0

VDS= 10 V; Tj= 25 °C.

5

10 20

MDA495

15

V

(V)

GS

Fig.5 Drain current as a function of gate-source

voltage, typical values.

October 1992 4

Philips Semiconductors Product specification

UHF power MOS transistor BLF543

handbook, halfpage

4

R

DSon

(Ω)

3

2

1

0

0 50 100 150

ID= 0.6 A; VGS= 10 V.

Tj ( °C)

Fig.6 Drain-source on-state resistance as a

function of junction temperature, typical
values.

MDA496

50

handbook, halfpage

C

(pF)

40

30

20

10

0

010

VGS= 0; f = 1 MHz.

20 30

MDA497

C

is

C

os

V

(V)

DS

Fig.7 Input and output capacitance as functions

of drain-source voltage, typical values.

20

handbook, halfpage

C

rs

(pF)

16

12

8

4

0

010

VGS= 0; f = 1 MHz.

20 30

MDA498

V

(V)

DS

Fig.8 Feedback capacitance as a function of

drain-source voltage, typical values.

October 1992 5

Philips Semiconductors Product specification

UHF power MOS transistor BLF543

APPLICATION INFORMATION FOR CLASS-B OPERATION

T

= 25 °C; R

h

RF performance in a common source class-B circuit.

= 0.4 K/W, unless otherwise specified.

th mb-h

MODE OF OPERATION

f

(MHz)

CW class-B 500 28 20 10 > 12

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

> 50

typ. 15

typ. 60
CW class-B 960 28 20 10 typ. 8 typ. 50
CW class-B 960 24 20 7.5 typ. 8 typ. 50

Ruggedness in class-B operation

The BLF543 is capable of withstanding a full load
mismatch corresponding to VSWR = 50 through all phases
under the following conditions:

VDS= 28 V; f = 500 MHz at rated output power.

30

handbook, halfpage

G

p

(dB)

20

MDA490

80

η

D

η

(%)

G

p

D

60

15

handbook, halfpage

P

L

(W)

10

MDA489

D

10

0

0

Class-B operation; VDS= 28 V; IDQ= 20 mA;

= 8.4+ j14.3 Ω; f = 500 MHz.

Z

L

5

10 15

PL (W)

40

20

Fig.9 Power gain and efficiency as functions of

load power, typical values.

October 1992 6

5

0

0

Class-B operation; VDS= 28 V; IDQ= 20 mA;

= 8.4 + j14.3 Ω; f = 500 MHz.

Z

L

0.5

1 1.5

PIN (W)

Fig.10 Load power as a function of input power,

typical values.

Philips Semiconductors Product specification

UHF power MOS transistor BLF543

handbook, full pagewidth

50 Ω
input

C1

C2

C3

C12

L8

C13

C9

BLF543

L6 R5

L4

L7

L5

C10

C11

C4

L1

L2 L3

C5

C6

C7

D.U.T.

R1

C8

R2

C14

C16

C15

50 Ω

output

+V

R3 R4

D

Fig.11 Test circuit for class-B operation at 500 MHz.

MDA500

October 1992 7

Philips Semiconductors Product specification

UHF power MOS transistor BLF543

List of components (class-B test circuit at 500 MHz)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C6, C9, C16 multilayer ceramic chip capacitor

(note 1)

C2, C14 multilayer ceramic chip capacitor

(note 1)
C3, C5, C13, C15 film dielectric trimmer 9 pF 2222 809 09002
C4 multilayer ceramic chip capacitor

(note 1)
C7 multilayer ceramic chip capacitor 2 × 100 nF in

C8, C10 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C11 aluminium electrolytic capacitor 10 µF, 63 V 2222 030 28109
C12 multilayer ceramic chip capacitor

(note 1)
L1 1 turn enamelled 0.8 mm copper

wire
L2 stripline (note 2) 42.5 Ω 14.5 × 3 mm
L3, L4 stripline (note 2) 42.5 Ω 6 × 3 mm
L5 7 turns enamelled 1 mm copper

wire

L6 grade 3B Ferroxcube RF choke 4312 020 36640
L7 stripline (note 2) 55.7 Ω 31 × 2 mm
L8 1 turn enamelled 1 mm copper wire 8 nH int. dia. 3.2 mm

R1, R2 0.4 W metal film resistor 1 kΩ 2322 151 71002
R3 10 turns cermet potentiometer 5 kΩ
R4 0.4 W metal film resistor 19.6 kΩ 2322 151 71963
R5 1 W metal film resistor 10 Ω 2322 153 51009

390 pF

7.5 pF

20 pF

2222 852 47104

parallel, 50 V

22 pF

11 nH int. dia. 4.7 mm

leads 2 × 5 mm

124 nH length 7.8 mm

int. dia. 4 mm
leads 2 × 5 mm

leads 2 × 5 mm

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (ε
thickness1⁄32inch.

October 1992 8

= 2.2);

r

Philips Semiconductors Product specification

UHF power MOS transistor BLF543

handbook, full pagewidth

mounting screw

+V

6

mm

rivet

strapstrap

G

R4

R5

+V

D

52 mm 59 mm

R3

70 mm

C7

R2

C4C2

C1

The circuit and components are situated on one side of the printed circuit board, the other side being fully
metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets
for a direct contact between upper and lower sheets.

L1

L2 L7

C8
C6

R1

BLF543

C9

L4L3

L6

L5

C10

C12

C13 C15C3 C5

Fig.12 Component layout for 500 MHz class-B test circuit.

C11

C14

L8 C16

MDA487

October 1992 9

Philips Semiconductors Product specification

UHF power MOS transistor BLF543

handbook, full pagewidth

C14

L5

L6

L8 L9L8

C10

C11

C17

C16C15

50 Ω

output

50 Ω
input

L1 L2 L3

C1

C3

C4

C5

R3

C6C2

L4

C7

C8

D.U.T.

BLF543

C9

R2 R1

R4 L10

C12

C13

+V

D

MDA499

Fig.13 Test circuit for class-B operation at 960 MHz.

October 1992 10

Philips Semiconductors Product specification

UHF power MOS transistor BLF543

List of components (class-B test circuit at 960 MHz)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C8, C10, C17 multilayer ceramic chip capacitor

(note 1)

C2 multilayer ceramic chip capacitor

(note 2)
C3, C5, C15, C16 film dielectric trimmer 1.2 to 5.5 pF 2222 808 00004
C4 multilayer ceramic chip capacitor

(note 2)
C6, C7 multilayer ceramic chip capacitor

(note 2)
C9, C12 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C14 multilayer ceramic chip capacitor

(note 2)
C11, C13 aluminum electrolytic capacitor 10 µF, 63 V 2222 030 28109
L1 stripline (note 3) 50 Ω 12.5 × 2.5 mm
L2 stripline (note 3) 50 Ω 19 × 2.5 mm
L3 stripline (note 3) 50 Ω 29.5 × 2.5 mm
L4, L5 stripline (note 3) 42.5 Ω 3 × 3 mm
L6 3 turns enamelled 0.8 mm copper

wire

L7 stripline (note 3) 50 Ω 12.5 × 2.5 mm
L8 stripline (note 3) 50 Ω 28.5 × 2.5 mm
L9 stripline (note 3) 50 Ω 20.5 × 2.5 mm
L10 grade 3B Ferroxcube RF choke 4312 020 36640
R1 0.4 W metal film resistor 205 kΩ 2322 151 72054
R2 10 turns potentiometer 50 kΩ
R3 0.4 W metal film resistor 10 kΩ 2322 151 71003
R4 0.4 W metal film resistor 10 Ω 2322 153 51009

68 pF

4.7 pF

2 × 5.6 pF in
parallel

7.5 pF

2 × 4.7 pF in
parallel

35 nH length 4.6 mm

int. dia. 4 mm
leads 2 × 5 mm

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.

3. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (ε
thickness1⁄32inch.

October 1992 11

= 2.2);

r

Philips Semiconductors Product specification

UHF power MOS transistor BLF543

10

handbook, halfpage

Z

i

(Ω)

0

−10

−20

−30

0

Class-B operation; VDS= 28 V; IDQ= 20 mA;

= 10 W.

P

L

r

i

x

i

200 400 600

MDA492

f (MHz)

Fig.14 Input impedance as a function of frequency

(series components), typical values.

40

handbook, halfpage

Z

L

(Ω)

30

20

10

0

0

Class-B operation; VDS= 28 V; IDQ= 20 mA;

= 10 W.

P

L

R

L

X

L

200 400 600

MDA494

f (MHz)

Fig.15 Load impedance as a function of frequency

(series components), typical values.

30

handbook, halfpage

G

p

(dB)

20

10

0

0

Class-B operation; VDS= 28 V; IDQ= 20 mA;

= 10 W.

P

L

200

400 600

f (MHz)

Fig.16 Power gain as a function of frequency,

typical values.

MDA493

Optimum input and load impedances

Optimum input impedance: 2.3 + j9.5 Ω.
Optimum load impedance: 4.3 + j8.6 Ω.
Conditions: class-B operation; VDS= 24 V;
IDQ= 20 mA; f = 960 MHz; PL= 7.5 W; typical values.

October 1992 12

Philips Semiconductors Product specification

UHF power MOS transistor BLF543

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 6 leads SOT171A

D

A

F

D

1

U

1

q

H

1

b

1

2

H

U

2

Db

9.25

9.04

0.364

0.356

1

D

1

9.30

8.99

0.366

0.354

5.95

5.74

0.234

0.226

A

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

6.81

6.07

0.268

0.239

2.15

1.85

0.085

0.073

b

1

3.20

2.89

0.126

0.114

c

0.16

0.07

0.006

0.003

6

345

b

e

0 5 10 mm

E

0.236

0.224

E

6.00

5.70

e

1

3.58

0.140

scale

C

w

M

C

2

p

w

M

3

F

H

11.31

3.05

10.54

2.54

0.445

0.120

0.415

0.100

B

w

H

1

9.27

9.01

0.365

0.355

c

E

1

M

AB

1

Q

qw

18.42

U

1

24.90

24.63

0.980

0.970

6.00

5.70

0.236

0.224

p

3.43

3.17

0.135

0.125

Q

4.32

4.11

0.170

0.162

E

w

U

2

2

1

w

3

0.260.51 1.02

0.010.02 0.040.725

OUTLINE
VERSION

SOT171A 97-06-28

IEC JEDEC EIAJ

REFERENCES

EUROPEAN

PROJECTION

October 1992 13

ISSUE DATE

Philips Semiconductors Product specification

UHF power MOS transistor BLF543

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

October 1992 14