Datasheet BLF542 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLF542

UHF power MOS transistor

Product specification

October 1992

Philips Semiconductors Product specification

UHF power MOS transistor BLF542

FEATURES

• High power gain

• Easy power control

• Gold metallization

• Good thermal stability

• Withstands full load mismatch

• Designed for broadband operation.

DESCRIPTION

Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the UHF frequency
range.

The transistor is encapsulated in a
6-lead, SOT171 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.

PINNING - SOT171

PIN DESCRIPTION

1 source
2 source
3 gate
4 drain
5 source
6 source

PIN CONFIGURATION

alfpage

1

3
5

Top view

2

4
6

MBA931 - 1

g

MBB072

d

s

Fig.1 Simplified outline and symbol.

CAUTION

The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

= 25 °C in a common source test circuit.

mb

f

(MHz)

V

(V)

DS

P

(W)

L

G

P

(dB)

(%)

CW, class-B 500 28 5 > 13 > 50

October 1992 2

η

D

Philips Semiconductors Product specification

UHF power MOS transistor BLF542

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

±V

GS

I

D

P

tot

T

stg

T

j

THERMAL RESISTANCE

SYMBOL PARAMETER THERMAL RESISTANCE

R

th j-mb

R

th mb-h

drain-source voltage − 65 V
gate-source voltage − 20 V
DC drain current − 1.5 A
total power dissipation Tmb=25°C − 20 W
storage temperature −65 150 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base 8.8 K/W
thermal resistance from mounting base to heatsink 0.4 K/W

10

handbook, halfpage

I

D

(A)

1

−1

10

−2

10

(1) Current in this area may be limited by R
(2) Tmb=25°C.

(1)

101

Fig.2 DC SOAR.

V

DS

DS(on)

(2)

(V)

MRA735

2

10

.

35

handbook, halfpage

P

tot

(W)

30

25

20

15

10

5

0

10 30 50 70 90 110 130

(1) Continuous operation.
(2) Short time operation during mismatch.

(2)

(1)

MRA734

Th (

o

C)

Fig.3 Power derating curves.

October 1992 3

Philips Semiconductors Product specification

UHF power MOS transistor BLF542

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

g

fs

R

DS(on)

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage ID= 0.1 mA; VGS=0 65 −−V
drain-source leakage current VGS= 0; VDS= 28 V −−10 µA
gate-source leakage current ±VGS= 20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 10 mA; VDS= 10 V 2 − 4.5 V
forward transconductance ID= 0.3 A; VDS= 10 V 160 240 − mS
drain-source on-resistance ID= 0.3 A; VGS= 15 V − 3.3 5 Ω
on-state drain current VGS= 15 V; VDS= 10 V − 1.4 − A
input capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 14 − pF
output capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 9.4 − pF
feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 1.7 − pF

handbook, halfpage

4

T.C.

(mV/K)

2

0

–2

–4

0 100 200 300

VDS= 10 V.

ID (mA)

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current, typical
values.

MBB777

1.5

handbook, halfpage

I

D

(A)

1

0.5

0

0

VDS= 10 V; Tj= 25 °C.

51015

MBB759

VGS (V)

Fig.5 Drain current as a function of gate-source

voltage, typical values.

October 1992 4

Philips Semiconductors Product specification

UHF power MOS transistor BLF542

handbook, halfpage

6

R

DS (on)

(Ω)

4

2

0

0

ID= 0.3 A; VGS= 15 V

50 100 150

MBB778

Tj (oC)

Fig.6 Drain-source on-resistance as a function of

junction temperature, typical values.

30

handbook, halfpage

C

(pF)

20

10

0

0

VGS= 0; f = 1 MHz.

C

is

C

os

10 20 30

MBB776

VDS (V)

Fig.7 Input and output capacitance as functions

of drain-source voltage, typical values.

handbook, halfpage

6

C

rs

(pF)

4

2

0

0

VGS= 0; f = 1 MHz.

10 20 30

VDS (V)

Fig.8 Feedback capacitance as a function of

drain-source voltage, typical values.

MBB775

October 1992 5

Philips Semiconductors Product specification

UHF power MOS transistor BLF542

APPLICATION INFORMATION FOR CLASS-B OPERATION

T

= 25 °C unless otherwise specified.

mb

RF performance in CW operation in a common source class-B test circuit.

MODE OF OPERATION

f

(MHz)

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

(dB)

CW, class-B 500 28 50 5 > 13

typ. 16.5

Ruggedness in class-B operation

The BLF542 is capable of withstanding a full load
mismatch corresponding to VSWR = 50:1 through all
phases under the following conditions: VDS= 28 V;
f = 500 MHz at rated output power.

20

handbook, halfpage

G

p

(dB)

15

10

G

p

η

MRA969

80

60

40

(%)

10

η

handbook, halfpage

P

L

(W)

8

6

4

P

η

D

(%)

> 50

typ. 59

MRA970

P

(W)

L

20

0

5

0

Class-B operation; VDS= 28 V; IDQ= 10 mA;

= 9.7+ j24.5 Ω; f = 500 MHz.

Z

L

2468100

Fig.9 Power gain and efficiency as functions of

load power, typical values.

October 1992 6

2

0

0 0.2 0.4 0.6 0.8

Class-B operation; VDS= 28 V; IDQ= 10 mA;

= 9.7+ j24.5Ω; f = 500 MHz.

Z

L

PIN (W)

Fig.10 Load power as a function of input power,

typical values.

Philips Semiconductors Product specification

,,

UHF power MOS transistor BLF542

handbook, full pagewidth

input
50 Ω

C1 L1 L2

C3

L3 L4

C9

DUT

R1C4C2

C5

R4

L6L5 L7

C10 C12

L8

C6

L9

C7

C11

C13

output

50 Ω

MBB760

f =500 MHz.

R2

R3

C8

VDD = + 28 V

Fig.11 Test circuit for class-B operation.

October 1992 7

Philips Semiconductors Product specification

UHF power MOS transistor BLF542

List of components (see test circuit)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C5, C13 multilayer ceramic chip capacitor

(note 1)
C2, C4, C10, C12 film dielectric trimmer 2 to 18 pF 222 809 05217
C3, C9 multilayer ceramic chip capacitor

(note 1)
C6 multilayer ceramic chip capacitor

(note 2)
C7 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C8 electrolytic capacitor 63 V, 10 µF 2222 030 28109
C11 multilayer ceramic chip capacitor

(note 1)
L1 stripline (note 3) 50 Ω 11 mm × 2.5 mm
L2 stripline (note 3) 50 Ω 37 mm × 2.5 mm
L3 stripline (note 3) 50 Ω 13 mm × 2.5 mm
L4, L5 stripline (note 3) 42 Ω 3mm×3 mm
L6 stripline (note 3) 50 Ω 39 mm × 2.5 mm
L7 stripline (note 3) 50 Ω 22 mm × 2.5 mm
L8 8 turns 0.8 mm enamelled copper

wire

L9 grade 3B Ferroxcube wideband

RF choke
R1 metal film resistor 10 kΩ, 0.4 W 2322 151 71003
R2 10 turn potentiometer 50 kΩ
R3 metal film resistor 205 kΩ, 0.4 W 2322 151 72054
R4 metal film resistor 10 Ω, 0.4 W 2322 151 71009

390 pF

39 pF

220 pF

10 pF

250 nH length 9 mm

int. dia. 6 mm
leads 2 × 5 mm

4312 020 36640

Notes

1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.

2. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

3. The striplines are on a double copper-clad printed circuit board with PTFE fibre-glass dielectric (ε
thickness1⁄32inch.

October 1992 8

= 2.2);

r

Philips Semiconductors Product specification

h

UHF power MOS transistor BLF542

handbook, full pagewidth

C1

L1

C2

andbook, full pagewidth

strap

(8x)

L2

rivet

(12x)

C3

C4

R1

V

G

L9

C5

L3

L4

C6

L5 L6

150 mm

R4

L8

C7

V

D

C8

C9

C11

L7

C13

C12C10

MBB762

70 mm

mounting

screws

(12x)

The components are mounted on one side of a copper-clad printed circuit board; the other side is unetched and
serves as a ground plane. Earth connections from the component side to the ground plane are made by means
of fixing screws, hollow rivets and copper foil straps, as shown.

Fig.12 Component layout for 500 MHz test circuit.

October 1992 9

MBB761

Philips Semiconductors Product specification

UHF power MOS transistor BLF542

10

handbook, halfpage

Z

i

(Ω)

0

−10

−20

−30

−40

−50

100 200 300 400 500

Class-B operation; VDS= 28 V; IDQ= 10 mA;

= 5 W.

P

L

r

i

x

i

Fig.13 Input impedance as a function of

frequency (series components), typical
values.

MRA732

f (MHz)

70

handbook, halfpage

Z

L

(Ω)

60

50

40

30

20

10

0

100 200 300 400 500

Class-B operation; VDS= 28 V; IDQ= 10 mA;

= 5 W.

P

L

X

L

R

L

Fig.14 Load impedance as a function of

frequency (series components), typical
values.

MRA733

f (MHz)

handbook, halfpage

Z

i

Z

MBA379

L

Fig.15 Definition of MOS impedance.

October 1992 10

35

handbook, halfpage

gain
(dB)

30

25

20

15

10

5

0

100 200 300 400 500

Class-B operation; VDS= 28 V; IDQ= 10 mA;

= 5 W.

P

L

f MHz)

Fig.16 Power gain as a function of frequency,

typical values.

MRA971

Philips Semiconductors Product specification

UHF power MOS transistor BLF542

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 6 leads SOT171A

D

A

F

D

1

U

1

q

H

1

b

1

2

H

U

2

Db

9.25

9.04

0.364

0.356

1

D

1

9.30

8.99

0.366

0.354

E

5.95

5.74

0.234

0.226

A

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

6.81

6.07

0.268

0.239

2.15

1.85

0.085

0.073

b

1

3.20

2.89

0.126

0.114

c

0.16

0.07

0.006

0.003

6

345

b

e

0 5 10 mm

scale

e

E

1

6.00

3.58

5.70

0.236

0.140

0.224

C

w

M

C

2

p

w

M

3

F

H

11.31

3.05

10.54

2.54

0.445

0.120

0.415

0.100

w

H

9.27

9.01

0.365

0.355

B

1

c

E

1

M

AB

1

Q

qw

18.42

U

1

24.90

24.63

0.980

0.970

6.00

5.70

0.236

0.224

p

3.43

3.17

0.135

0.125

Q

4.32

4.11

0.170

0.162

E

w

U

2

2

1

w

3

0.260.51 1.02

0.010.02 0.040.725

OUTLINE

VERSION

SOT171A 97-06-28

IEC JEDEC EIAJ

REFERENCES

EUROPEAN

PROJECTION

October 1992 11

ISSUE DATE

Philips Semiconductors Product specification

UHF power MOS transistor BLF542

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

October 1992 12