Datasheet BLF521 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLF521

UHF power MOS transistor

Product specification

November 1992

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

FEATURES

• High power gain

• Easy power control

• Gold metallization

• Good thermal stability

• Withstands full load mismatch

• Designed for broadband operation.

DESCRIPTION

Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the UHF
frequency range.

The transistor is encapsulated in a
4-lead, SOT172D studless envelope,
with a ceramic cap. All leads are
isolated from the mounting base.

PINNING - SOT172D

PIN CONFIGURATION

ok, halfpage

2

Top view

1

3

g

MBB072

4

MSB007

d

s

Fig.1 Simplified outline and symbol.

CAUTION

The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.

WARNING

Product and environmental safety - toxic materials

PIN DESCRIPTION

1 source
2 gate
3 drain
4 source

This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

= 25 °C in a common source test circuit.

amb

f

(MHz)

V

(V)

DS

P

(W)

L

G

(dB)

p

(%)

CW, class-B 500 12.5 2 > 10 > 50

η

D

November 1992 2

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

±V

GS

I

D

P

tot

T

stg

T

j

THERMAL RESISTANCE

drain-source voltage − 40 V
gate-source voltage − 20 V
DC drain current − 1A
total power dissipation up to Tmb=25°C − 10 W
storage temperature −65 150 °C
junction temperature − 200 °C

SYMBOL PARAMETER

R

th j-mb

R

th j-a

thermal resistance from junction to mounting base 17.5 K/W
thermal resistance from junction to ambient (note 1) 75 K/W

Note

1. Mounted on printed circuit board, see Fig.12.

MRA989

I

(A)

5

D

1

handbook, halfpage

(1)

(2)

16

handbook, halfpage

P

tot

(W)

12

8

4

THERMAL

RESISTANCE

MDA486

(2)

(1)

0.1
1 10 100

(1) Current in this area may be limited by R
(2) Tmb=25°C.

VDS (V)

.

DS(on)

Fig.2 DC SOAR.

November 1992 3

0

0 40 80 160

(1) Continuous operation.
(2) Short-time operation during mismatch.

120

Fig.3 Power/temperature derating curves.

Tmb ( °C)

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

g

fs

R

DS(on)

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage VGS= 0; ID= 3 mA 40 −− V
drain-source leakage current VGS= 0; VDS= 12.5 V −−10 µA
gate-source leakage current ±VGS= 20 V; VDS=0 −−1 µA
gate-source threshold voltage ID= 3 mA; VDS=10V 2 − 4.5 V
forward transconductance ID= 0.3 A; VDS= 10 V 80 135 − mS
drain-source on-state resistance ID= 0.3 A; VGS=15V − 3.5 4 Ω
on-state drain current VGS= 15 V; VDS=10V − 1.3 − A
input capacitance VGS=0;VDS= 12.5 V; f = 1 MHz − 5.3 − pF
output capacitance VGS=0;VDS= 12.5 V; f = 1 MHz − 7.8 − pF
feedback capacitance VGS=0;VDS= 12.5 V; f = 1 MHz − 1.8 − pF

15

handbook, halfpage

T.C

(mV/K)

10

5

0

−5
1

VDS=10V.

10 10

2

ID (A)

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current, typical
values.

MDA485

1600

handbook, halfpage

I

D

(mA)

1200

800

400

0

3

10

04 20

VDS=10V;Tj=25°C.

81216

MDA484

VGS (V)

Fig.5 Drain current as a function of gate-source

voltage, typical values.

November 1992 4

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

handbook, halfpage

5

R

DSon

(Ω)

4

3

2

1

0

04080

ID= 0.3A; VGS=15V.

120

Tj (°C)

Fig.6 Drain-source on-state resistance as a

function of junction temperature, typical
values.

MDA483

160

30

handbook, halfpage

C

(pF)

20

10

0

0

VGS= 0; f = 1 MHz.

C

os

C

is

4

816

MDA482

12

V

(V)

DS

Fig.7 Input and output capacitance as functions

of drain-source voltage, typical values.

handbook, halfpage

5

C

rs

(pF)

4

3

2

1

0

048

VGS= 0; f = 1 MHz.

12

VDS (V)

Fig.8 Feedback capacitance as a function of

drain-source voltage, typical values.

MDA481

16

November 1992 5

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

APPLICATION INFORMATION FOR CLASS-B OPERATION

T

=25°C; RGS= 274 Ω, unless otherwise specified.

amb

RF performance in a common source class-B test circuit.

MODE OF OPERATION

f

(MHz)

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

(dB)

CW, class-B 500 12.5 10 2 > 10

typ. 13

Ruggedness in class-B operation

The BLF521 is capable of withstanding a load mismatch
corresponding to VSWR = 50:1 through all phases under
the following conditions:

VDS= 15.5 V; f = 500 MHz at rated output power.

20

handbook, halfpage

G

p

(dB)

16

12

8

MDA480

100

η

D

(%)

G

p

η

D

80

60

40

handbook, halfpage

P

(W)

4

L

3

2

P

η

D

(%)

> 50

typ. 60

MDA479

4

0

0.5 1.5

Class-B operation; VDS= 12.5V; IDQ= 10mA;

= 9.5 + j12.8; f = 500 MHz.

Z

L

2.5 3.5
PL (W)

20

0

Fig.9 Power gain and efficiency as functions of

load power, typical values.

November 1992 6

1

0

0 0.2 1.0

Class-B operation; VDS= 12.5V; IDQ= 20mA;

= 9.5 + j12.8; f = 175 MHz.

Z

L

0.4 0.6 0.8
PIN (W)

Fig.10 Load power as a function of input power,

typical values.

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

handbook, full pagewidth

C12

L8 L10L9

L6

R6

C11

C15

C14C13

50 Ω

output

50 Ω
input

L1 L2 L3

C1

C2

C3

C4

L4

D.U.T.

R1

C7

L5

BLF521

C8C5

f = 500 MHz.

R2

R3

C6

R4 R5

L7

C9

C10

+V

D

Fig.11 Test circuit for class-B operation.

MDA475

November 1992 7

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

List of components (class-AB test circuit)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C5, C8, C15 multilayer ceramic chip capacitor

(note 1)
C2, C13 film dielectric trimmer 2 to 9 pF 2222 809 09002
C3 multilayer ceramic chip capacitor

(note 2)
C4 film dielectric trimmer 2 to 18 pF 2222 809 09003
C6, C11 multilayer ceramic chip capacitor 2 × 100 nF in

C7, C9 multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104
C10 electrolytic capacitor 10 µF, 63 V 2222 030 38109
C12 multilayer ceramic chip capacitor

(note 2)
C14 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09001
L1 stripline (note 3) 83 Ω 20 × 2mm
L2 stripline (note 3) 83 Ω 21 × 2mm
L3 stripline (note 3) 83 Ω 19 × 2mm
L4, L5 stripline (note 3) 67 Ω 12 × 3mm
L6 5 turns enamelled 0.5 mm copper

wire

L7 grade 3B Ferroxcube RF choke 4312 020 36642
L8 stripline (note 3) 83 Ω 18.6 × 2mm
L9 stripline (note 3) 83 Ω 31.6 × 2mm
L10 stripline (note 3) 83 Ω 2 × 2mm
R1 0.4 W metal film resistor 274 Ω 2322 151 72741
R2 0.4 W metal film resistor 1.96 kΩ 2322 151 71962
R3 0.4 W metal film resistor 1 MΩ 2322 151 71005
R4 cermet potentiometer 5 kΩ
R5 0.4 W metal film resistor 7.5 kΩ 2322 151 77502
R6 1 W metal film resistor 10 Ω 2322 153 51009

390 pF, 500 V

5.6 pF, 500 V

2222 852 47104

parallel, 50 V

9.1 pF, 50 V

62 nH length 3.75 mm

int. dia. 3 mm
leads 2 × 4mm

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.

3. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε
thickness 1.6 mm.

November 1992 8

= 2.2),

r

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

handbook, full pagewidth

handbook, full pagewidth

C1

strap

strap

C11

C8

+V

DS

C9

C10

R6

L5

L7

L10

C14

strap

strap

C15

MBA381

70

mm

L6

C12

L8

C13

L9

rivets

R4

R3

C5

R2

C6

C3

L1

C2

L2

C4

rivets

rivets

C7

L3

R1

L4

150 mm

mounting

screws

(6x)

The circuit and components are situated on one side of the printed circuit board, the other side being fully
metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets
for a direct contact between upper and lower sheets.

Fig.12 Component layout for 500 MHz test circuit.

November 1992 9

MBA380

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

400

MDA478

f (MHz)

50

handbook, halfpage

Z

i

(Ω)

0

−50

−100

100

Class-B operation; VDS= 12.5V; IDQ= 10mA;

= 274 Ω;PL=2W.

R

GS

200

r

i

x

i

300 500

Fig.13 Input impedance as a function of frequency

(series components), typical values per
section.

400

MDA477

f (MHz)

50

handbook, halfpage

Z

L

(Ω)

40

30

R

L

20

10

0

100 200 300

Class-B operation; VDS= 12.5V; IDQ= 10mA;

= 274 Ω;PL=2W.

R

GS

X

L

Fig.14 Load impedance as a function of frequency

(series components), typical values.

500

handbook, halfpage

Fig.15 Definition of MOS impedance.

400

MDA476

f (MHz)

500

20

handbook, halfpage

G

p

(dB)

16

12

8

4

Z

i

Z

MBA379

L

0

100 200 300

Class-B operation; VDS= 12.5V; IDQ= 10mA;

= 274 Ω;PL=2W.

R

GS

Fig.16 Power gain as a function of frequency,

typical values.

November 1992 10

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

Common emitter S-parameters
Measured at V

f

(MHz)

= 12.5 V and ID = 100 mA.

DS

S

11

MAGNITUDE

(ratio)

ANGLE

(deg)

S

MAGNITUDE

(ratio)

21

ANGLE

(deg)

S

MAGNITUDE

(ratio)

12

ANGLE

(deg)

S

MAGNITUDE

(ratio)

22

40 0.968 −24.0 10.749 161.5 0.044 72.6 0.900 −27.4
100 0.864 −55.4 9.105 138.3 0.094 51.7 0.828 −62.4
200 0.701 −91.0 6.353 112.7 0.130 29.7 0.735 −100.8
300 0.626 −112.4 4.693 97.0 0.140 17.2 0.693 −122.7
400 0.587 −127.0 3.622 85.6 0.141 9.4 0.678 −136.3
500 0.580 −137.1 2.959 76.5 0.139 4.0 0.675 −145.4
600 0.580 −144.6 2.498 68.8 0.135 0.0 0.675 −152.1
700 0.581 −151.7 2.131 61.4 0.130 −2.5 0.677 −157.5
800 0.588 −157.6 1.874 54.7 0.123 −4.3 0.677 −162.3
900 0.596 −163.5 1.656 48.8 0.115 −4.8 0.683 −166.9

1000 0.605 −168.8 1.473 43.0 0.107 −4.4 0.689 −171.2

Measured at V

f

(MHz)

= 12.5 V and ID = 150 mA.

DS

S

11

MAGNITUDE

(ratio)

ANGLE

(deg)

S

MAGNITUDE

(ratio)

21

ANGLE

(deg)

S

MAGNITUDE

(ratio)

12

ANGLE

(deg)

S

MAGNITUDE

(ratio)

22

40 0.965 −25.9 11.435 160.6 0.044 72.0 0.876 −29.2
100 0.857 −58.7 9.534 136.8 0.092 50.1 0.804 −65.7
200 0.691 −95.1 6.529 111.3 0.125 28.6 0.715 −104.3
300 0.622 −116.7 4.783 96.0 0.134 16.7 0.678 −125.8
400 0.588 −130.3 3.663 84.8 0.135 9.2 0.666 −138.8
500 0.580 −140.8 2.988 75.9 0.133 4.3 0.665 −147.5
600 0.582 −147.8 2.515 68.4 0.128 0.7 0.666 −154.0
700 0.586 −154.9 2.154 61.2 0.123 −1.3 0.668 −159.1
800 0.588 −160.5 1.897 54.6 0.117 −2.6 0.669 −163.8
900 0.599 −166.3 1.673 48.8 0.111 −2.6 0.675 −168.1

1000 0.609 −171.7 1.493 43.0 0.103 −1.7 0.681 −172.3

ANGLE

(deg)

ANGLE

(deg)

November 1992 11

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

Measured at VDS = 12.5 V and ID = 200 mA.

f

(MHz)

S

MAGNITUDE

(ratio)

11

ANGLE

(deg)

MAGNITUDE

(ratio)

S

21

ANGLE

(deg)

S

MAGNITUDE

(ratio)

12

ANGLE

(deg)

S

MAGNITUDE

(ratio)

22

40 0.965 −26.7 11.660 160.1 0.044 71.4 0.854 −30.4
100 0.851 −60.7 9.625 135.9 0.091 49.4 0.783 −67.7
200 0.688 −97.5 6.524 110.5 0.123 27.9 0.699 −106.5
300 0.623 −118.8 4.751 95.2 0.131 16.4 0.666 −127.6
400 0.590 −132.7 3.644 84.3 0.132 9.2 0.657 −140.3
500 0.585 −142.4 2.968 75.3 0.130 4.3 0.658 −148.7
600 0.583 −150.0 2.495 67.8 0.126 1.0 0.659 −155.0
700 0.589 −156.7 2.137 60.7 0.120 −0.8 0.662 −160.0
800 0.593 −162.2 1.877 54.3 0.114 −1.9 0.664 −164.6
900 0.602 −167.8 1.656 48.4 0.108 −1.7 0.670 −168.9

1000 0.612 −173.0 1.476 42.8 0.100 −0.5 0.677 −173.0

Measured at V

f

(MHz)

= 12.5 V and ID = 250 mA.

DS

S

11

MAGNITUDE

(ratio)

ANGLE

(deg)

S

MAGNITUDE

(ratio)

21

ANGLE

(deg)

S

MAGNITUDE

(ratio)

12

ANGLE

(deg)

S

MAGNITUDE

(ratio)

22

40 0.963 −27.3 11.640 159.7 0.045 70.8 0.832 −31.3
100 0.848 −62.0 9.567 135.2 0.092 48.9 0.766 −69.2
200 0.686 −99.3 6.434 109.8 0.123 27.4 0.688 −108.2
300 0.624 −120.3 4.674 94.6 0.130 16.0 0.657 −128.9
400 0.594 −134.2 3.582 83.8 0.130 8.9 0.651 −141.3
500 0.585 −143.9 2.914 74.7 0.128 4.2 0.651 −149.6
600 0.590 −150.8 2.447 67.4 0.124 0.9 0.654 −155.8
700 0.595 −157.6 2.097 60.3 0.119 −0.6 0.658 −160.7
800 0.601 −163.1 1.840 53.8 0.113 −1.7 0.660 −165.2
900 0.607 −168.8 1.625 48.0 0.106 −1.3 0.667 −169.4

1000 0.613 −174.1 1.447 42.2 0.099 −0.1 0.673 −173.3

ANGLE

(deg)

ANGLE

(deg)

November 1992 12

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

PACKAGE OUTLINE

Studless ceramic package; 4 leads SOT172D

D

A

Q

D

1

H

b

c

4

b

1

H

1

2

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

3.71

2.89

0.146

0.114

3.31

3.04

0.13

0.12

0.89

0.63

0.035

0.025

c

b

1

0.16

0.10

0.006

0.004

Db

5.20

4.95

0.205

0.195

D

1

5.33

5.08

0.210

0.200

H

26.17

24.63

1.03

0.97

Q

1.15

0.88

0.045

0.035

3

OUTLINE
VERSION

SOT172D

IEC JEDEC EIAJ

REFERENCES

November 1992 13

EUROPEAN

PROJECTION

ISSUE DATE

97-06-28

Philips Semiconductors Product specification

UHF power MOS transistor BLF521

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

November 1992 14