Datasheet BLF521 Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF521
UHF power MOS transistor
Product specification
November 1992
Page 2
Philips Semiconductors Product specification
FEATURES
High power gain
Easy power control
Gold metallization
Good thermal stability
Withstands full load mismatch
Designed for broadband operation.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range.
The transistor is encapsulated in a 4-lead, SOT172D studless envelope, with a ceramic cap. All leads are isolated from the mounting base.
PINNING - SOT172D
PIN CONFIGURATION
ok, halfpage
2
Top view
1
3
g
MBB072
4
MSB007
d
s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
PIN DESCRIPTION
1 source 2 gate 3 drain 4 source
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a common source test circuit.
amb
f
(MHz)
V
(V)
DS
P
(W)
L
G
(dB)
p
(%)
CW, class-B 500 12.5 2 > 10 > 50
η
D
November 1992 2
Page 3
Philips Semiconductors Product specification
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
drain-source voltage 40 V gate-source voltage 20 V DC drain current 1A total power dissipation up to Tmb=25°C 10 W storage temperature 65 150 °C junction temperature 200 °C
SYMBOL PARAMETER
R
th j-mb
R
th j-a
thermal resistance from junction to mounting base 17.5 K/W thermal resistance from junction to ambient (note 1) 75 K/W
Note
1. Mounted on printed circuit board, see Fig.12.
MRA989
I
(A)
5
D
1
handbook, halfpage
(1)
(2)
16
handbook, halfpage
P
tot
(W)
12
8
4
THERMAL
RESISTANCE
MDA486
(2)
(1)
0.1 1 10 100
(1) Current in this area may be limited by R (2) Tmb=25°C.
VDS (V)
.
DS(on)
Fig.2 DC SOAR.
November 1992 3
0
0 40 80 160
(1) Continuous operation. (2) Short-time operation during mismatch.
120
Fig.3 Power/temperature derating curves.
Tmb ( °C)
Page 4
Philips Semiconductors Product specification
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage VGS= 0; ID= 3 mA 40 −− V drain-source leakage current VGS= 0; VDS= 12.5 V −−10 µA gate-source leakage current ±VGS= 20 V; VDS=0 −−1 µA gate-source threshold voltage ID= 3 mA; VDS=10V 2 4.5 V forward transconductance ID= 0.3 A; VDS= 10 V 80 135 mS drain-source on-state resistance ID= 0.3 A; VGS=15V 3.5 4 on-state drain current VGS= 15 V; VDS=10V 1.3 A input capacitance VGS=0;VDS= 12.5 V; f = 1 MHz 5.3 pF output capacitance VGS=0;VDS= 12.5 V; f = 1 MHz 7.8 pF feedback capacitance VGS=0;VDS= 12.5 V; f = 1 MHz 1.8 pF
15
handbook, halfpage
T.C
(mV/K)
10
5
0
5 1
VDS=10V.
10 10
2
ID (A)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical values.
MDA485
1600
handbook, halfpage
I
D
(mA)
1200
800
400
0
3
10
04 20
VDS=10V;Tj=25°C.
81216
MDA484
VGS (V)
Fig.5 Drain current as a function of gate-source
voltage, typical values.
November 1992 4
Page 5
Philips Semiconductors Product specification
handbook, halfpage
5
R
DSon
()
4
3
2
1
0
04080
ID= 0.3A; VGS=15V.
120
Tj (°C)
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical values.
MDA483
160
30
handbook, halfpage
C
(pF)
20
10
0
0
VGS= 0; f = 1 MHz.
C
os
C
is
4
816
MDA482
12
V
(V)
DS
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
handbook, halfpage
5
C
rs
(pF)
4
3
2
1
0
048
VGS= 0; f = 1 MHz.
12
VDS (V)
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
MDA481
16
November 1992 5
Page 6
Philips Semiconductors Product specification
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
=25°C; RGS= 274 , unless otherwise specified.
amb
RF performance in a common source class-B test circuit.
MODE OF OPERATION
f
(MHz)
V
(V)
DS
I
DQ
(mA)
P
(W)
L
G
(dB)
CW, class-B 500 12.5 10 2 > 10
typ. 13
Ruggedness in class-B operation
The BLF521 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions:
VDS= 15.5 V; f = 500 MHz at rated output power.
20
handbook, halfpage
G
p
(dB)
16
12
8
MDA480
100
η
D
(%)
G
p
η
D
80
60
40
handbook, halfpage
P
(W)
4
L
3
2
P
η
D
(%)
> 50
typ. 60
MDA479
4
0
0.5 1.5
Class-B operation; VDS= 12.5V; IDQ= 10mA;
= 9.5 + j12.8; f = 500 MHz.
Z
L
2.5 3.5 PL (W)
20
0
Fig.9 Power gain and efficiency as functions of
load power, typical values.
November 1992 6
1
0
0 0.2 1.0
Class-B operation; VDS= 12.5V; IDQ= 20mA;
= 9.5 + j12.8; f = 175 MHz.
Z
L
0.4 0.6 0.8 PIN (W)
Fig.10 Load power as a function of input power,
typical values.
Page 7
Philips Semiconductors Product specification
handbook, full pagewidth
C12
L8 L10L9
L6
R6
C11
C15
C14C13
50
output
50 input
L1 L2 L3
C1
C2
C3
C4
L4
D.U.T.
R1
C7
L5
BLF521
C8C5
f = 500 MHz.
R2
R3
C6
R4 R5
L7
C9
C10
+V
D
Fig.11 Test circuit for class-B operation.
MDA475
November 1992 7
Page 8
Philips Semiconductors Product specification
List of components (class-AB test circuit)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C5, C8, C15 multilayer ceramic chip capacitor
(note 1) C2, C13 film dielectric trimmer 2 to 9 pF 2222 809 09002 C3 multilayer ceramic chip capacitor
(note 2) C4 film dielectric trimmer 2 to 18 pF 2222 809 09003 C6, C11 multilayer ceramic chip capacitor 2 × 100 nF in
C7, C9 multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104 C10 electrolytic capacitor 10 µF, 63 V 2222 030 38109 C12 multilayer ceramic chip capacitor
(note 2) C14 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09001 L1 stripline (note 3) 83 20 × 2mm L2 stripline (note 3) 83 21 × 2mm L3 stripline (note 3) 83 19 × 2mm L4, L5 stripline (note 3) 67 12 × 3mm L6 5 turns enamelled 0.5 mm copper
wire
L7 grade 3B Ferroxcube RF choke 4312 020 36642 L8 stripline (note 3) 83 18.6 × 2mm L9 stripline (note 3) 83 31.6 × 2mm L10 stripline (note 3) 83 2 × 2mm R1 0.4 W metal film resistor 274 2322 151 72741 R2 0.4 W metal film resistor 1.96 k 2322 151 71962 R3 0.4 W metal film resistor 1 M 2322 151 71005 R4 cermet potentiometer 5 k R5 0.4 W metal film resistor 7.5 k 2322 151 77502 R6 1 W metal film resistor 10 2322 153 51009
390 pF, 500 V
5.6 pF, 500 V
2222 852 47104
parallel, 50 V
9.1 pF, 50 V
62 nH length 3.75 mm
int. dia. 3 mm leads 2 × 4mm
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
3. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε thickness 1.6 mm.
November 1992 8
= 2.2),
r
Page 9
Philips Semiconductors Product specification
handbook, full pagewidth
handbook, full pagewidth
C1
strap
strap
C11
C8
+V
DS
C9
C10
R6
L5
L7
L10
C14
strap
strap
C15
MBA381
70
mm
L6
C12
L8
C13
L9
rivets
R4
R3
C5
R2
C6
C3
L1
C2
L2
C4
rivets
rivets
C7
L3
R1
L4
150 mm
mounting
screws
(6x)
The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
Fig.12 Component layout for 500 MHz test circuit.
November 1992 9
MBA380
Page 10
Philips Semiconductors Product specification
400
MDA478
f (MHz)
50
handbook, halfpage
Z
i
()
0
50
100
100
Class-B operation; VDS= 12.5V; IDQ= 10mA;
= 274 ;PL=2W.
R
GS
200
r
i
x
i
300 500
Fig.13 Input impedance as a function of frequency
(series components), typical values per section.
400
MDA477
f (MHz)
50
handbook, halfpage
Z
L
()
40
30
R
L
20
10
0
100 200 300
Class-B operation; VDS= 12.5V; IDQ= 10mA;
= 274 ;PL=2W.
R
GS
X
L
Fig.14 Load impedance as a function of frequency
(series components), typical values.
500
handbook, halfpage
Fig.15 Definition of MOS impedance.
400
MDA476
f (MHz)
500
20
handbook, halfpage
G
p
(dB)
16
12
8
4
Z
i
Z
MBA379
L
0
100 200 300
Class-B operation; VDS= 12.5V; IDQ= 10mA;
= 274 ;PL=2W.
R
GS
Fig.16 Power gain as a function of frequency,
typical values.
November 1992 10
Page 11
Philips Semiconductors Product specification
Common emitter S-parameters Measured at V
f
(MHz)
= 12.5 V and ID = 100 mA.
DS
S
11
MAGNITUDE
(ratio)
ANGLE
(deg)
S
MAGNITUDE
(ratio)
21
ANGLE
(deg)
S
MAGNITUDE
(ratio)
12
ANGLE
(deg)
S
MAGNITUDE
(ratio)
22
40 0.968 24.0 10.749 161.5 0.044 72.6 0.900 27.4 100 0.864 55.4 9.105 138.3 0.094 51.7 0.828 62.4 200 0.701 91.0 6.353 112.7 0.130 29.7 0.735 100.8 300 0.626 112.4 4.693 97.0 0.140 17.2 0.693 122.7 400 0.587 127.0 3.622 85.6 0.141 9.4 0.678 136.3 500 0.580 137.1 2.959 76.5 0.139 4.0 0.675 145.4 600 0.580 144.6 2.498 68.8 0.135 0.0 0.675 152.1 700 0.581 151.7 2.131 61.4 0.130 2.5 0.677 157.5 800 0.588 157.6 1.874 54.7 0.123 4.3 0.677 162.3 900 0.596 163.5 1.656 48.8 0.115 4.8 0.683 166.9
1000 0.605 168.8 1.473 43.0 0.107 4.4 0.689 171.2
Measured at V
f
(MHz)
= 12.5 V and ID = 150 mA.
DS
S
11
MAGNITUDE
(ratio)
ANGLE
(deg)
S
MAGNITUDE
(ratio)
21
ANGLE
(deg)
S
MAGNITUDE
(ratio)
12
ANGLE
(deg)
S
MAGNITUDE
(ratio)
22
40 0.965 25.9 11.435 160.6 0.044 72.0 0.876 29.2 100 0.857 58.7 9.534 136.8 0.092 50.1 0.804 65.7 200 0.691 95.1 6.529 111.3 0.125 28.6 0.715 104.3 300 0.622 116.7 4.783 96.0 0.134 16.7 0.678 125.8 400 0.588 130.3 3.663 84.8 0.135 9.2 0.666 138.8 500 0.580 140.8 2.988 75.9 0.133 4.3 0.665 147.5 600 0.582 147.8 2.515 68.4 0.128 0.7 0.666 154.0 700 0.586 154.9 2.154 61.2 0.123 1.3 0.668 159.1 800 0.588 160.5 1.897 54.6 0.117 2.6 0.669 163.8 900 0.599 166.3 1.673 48.8 0.111 2.6 0.675 168.1
1000 0.609 171.7 1.493 43.0 0.103 1.7 0.681 172.3
ANGLE
(deg)
ANGLE
(deg)
November 1992 11
Page 12
Philips Semiconductors Product specification
Measured at VDS = 12.5 V and ID = 200 mA.
f
(MHz)
S
MAGNITUDE
(ratio)
11
ANGLE
(deg)
MAGNITUDE
(ratio)
S
21
ANGLE
(deg)
S
MAGNITUDE
(ratio)
12
ANGLE
(deg)
S
MAGNITUDE
(ratio)
22
40 0.965 26.7 11.660 160.1 0.044 71.4 0.854 30.4 100 0.851 60.7 9.625 135.9 0.091 49.4 0.783 67.7 200 0.688 97.5 6.524 110.5 0.123 27.9 0.699 106.5 300 0.623 118.8 4.751 95.2 0.131 16.4 0.666 127.6 400 0.590 132.7 3.644 84.3 0.132 9.2 0.657 140.3 500 0.585 142.4 2.968 75.3 0.130 4.3 0.658 148.7 600 0.583 150.0 2.495 67.8 0.126 1.0 0.659 155.0 700 0.589 156.7 2.137 60.7 0.120 0.8 0.662 160.0 800 0.593 162.2 1.877 54.3 0.114 1.9 0.664 164.6 900 0.602 167.8 1.656 48.4 0.108 1.7 0.670 168.9
1000 0.612 173.0 1.476 42.8 0.100 0.5 0.677 173.0
Measured at V
f
(MHz)
= 12.5 V and ID = 250 mA.
DS
S
11
MAGNITUDE
(ratio)
ANGLE
(deg)
S
MAGNITUDE
(ratio)
21
ANGLE
(deg)
S
MAGNITUDE
(ratio)
12
ANGLE
(deg)
S
MAGNITUDE
(ratio)
22
40 0.963 27.3 11.640 159.7 0.045 70.8 0.832 31.3 100 0.848 62.0 9.567 135.2 0.092 48.9 0.766 69.2 200 0.686 99.3 6.434 109.8 0.123 27.4 0.688 108.2 300 0.624 120.3 4.674 94.6 0.130 16.0 0.657 128.9 400 0.594 134.2 3.582 83.8 0.130 8.9 0.651 141.3 500 0.585 143.9 2.914 74.7 0.128 4.2 0.651 149.6 600 0.590 150.8 2.447 67.4 0.124 0.9 0.654 155.8 700 0.595 157.6 2.097 60.3 0.119 0.6 0.658 160.7 800 0.601 163.1 1.840 53.8 0.113 1.7 0.660 165.2 900 0.607 168.8 1.625 48.0 0.106 1.3 0.667 169.4
1000 0.613 174.1 1.447 42.2 0.099 0.1 0.673 173.3
ANGLE
(deg)
ANGLE
(deg)
November 1992 12
Page 13
Philips Semiconductors Product specification
PACKAGE OUTLINE
Studless ceramic package; 4 leads SOT172D
D
A
Q
D
1
H
b
c
4
b
1
H
1
2
0 5 10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
inches
A
3.71
2.89
0.146
0.114
3.31
3.04
0.13
0.12
0.89
0.63
0.035
0.025
c
b
1
0.16
0.10
0.006
0.004
Db
5.20
4.95
0.205
0.195
D
1
5.33
5.08
0.210
0.200
H
26.17
24.63
1.03
0.97
Q
1.15
0.88
0.045
0.035
3
OUTLINE VERSION
SOT172D
IEC JEDEC EIAJ
REFERENCES
November 1992 13
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
Page 14
Philips Semiconductors Product specification
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
November 1992 14
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