Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the UHF
frequency range.
The transistor is encapsulated in a
4-lead, SOT172D studless envelope,
with a ceramic cap. All leads are
isolated from the mounting base.
PINNING - SOT172D
PIN CONFIGURATION
ok, halfpage
2
Top view
1
3
g
MBB072
4
MSB007
d
s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
PINDESCRIPTION
1source
2gate
3drain
4source
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a common source test circuit.
amb
f
(MHz)
V
(V)
DS
P
(W)
L
G
(dB)
p
(%)
CW, class-B50012.52> 10> 50
η
D
November 19922
Page 3
Philips SemiconductorsProduct specification
UHF power MOS transistorBLF521
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
drain-source voltage−40V
gate-source voltage−20V
DC drain current−1A
total power dissipationup to Tmb=25°C−10W
storage temperature−65150°C
junction temperature−200°C
SYMBOLPARAMETER
R
th j-mb
R
th j-a
thermal resistance from junction to mounting base17.5 K/W
thermal resistance from junction to ambient (note 1)75 K/W
Note
1. Mounted on printed circuit board, see Fig.12.
MRA989
I
(A)
5
D
1
handbook, halfpage
(1)
(2)
16
handbook, halfpage
P
tot
(W)
12
8
4
THERMAL
RESISTANCE
MDA486
(2)
(1)
0.1
110100
(1) Current in this area may be limited by R
(2) Tmb=25°C.
VDS (V)
.
DS(on)
Fig.2 DC SOAR.
November 19923
0
04080160
(1) Continuous operation.
(2) Short-time operation during mismatch.
L7grade 3B Ferroxcube RF choke4312 020 36642
L8stripline (note 3)83 Ω18.6 × 2mm
L9stripline (note 3)83 Ω31.6 × 2mm
L10stripline (note 3)83 Ω2 × 2mm
R10.4 W metal film resistor274 Ω2322 151 72741
R20.4 W metal film resistor1.96 kΩ2322 151 71962
R30.4 W metal film resistor1 MΩ2322 151 71005
R4cermet potentiometer5 kΩ
R50.4 W metal film resistor7.5 kΩ2322 151 77502
R61 W metal film resistor10 Ω2322 153 51009
390 pF, 500 V
5.6 pF, 500 V
2222 852 47104
parallel, 50 V
9.1 pF, 50 V
62 nHlength 3.75 mm
int. dia. 3 mm
leads 2 × 4mm
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
3. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε
thickness 1.6 mm.
November 19928
= 2.2),
r
Page 9
Philips SemiconductorsProduct specification
UHF power MOS transistorBLF521
handbook, full pagewidth
handbook, full pagewidth
C1
strap
strap
C11
C8
+V
DS
C9
C10
R6
L5
L7
L10
C14
strap
strap
C15
MBA381
70
mm
L6
C12
L8
C13
L9
rivets
R4
R3
C5
R2
C6
C3
L1
C2
L2
C4
rivets
rivets
C7
L3
R1
L4
150 mm
mounting
screws
(6x)
The circuit and components are situated on one side of the printed circuit board, the other side being fully
metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets
for a direct contact between upper and lower sheets.
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
inches
A
3.71
2.89
0.146
0.114
3.31
3.04
0.13
0.12
0.89
0.63
0.035
0.025
c
b
1
0.16
0.10
0.006
0.004
Db
5.20
4.95
0.205
0.195
D
1
5.33
5.08
0.210
0.200
H
26.17
24.63
1.03
0.97
Q
1.15
0.88
0.045
0.035
3
OUTLINE
VERSION
SOT172D
IEC JEDEC EIAJ
REFERENCES
November 199213
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
Page 14
Philips SemiconductorsProduct specification
UHF power MOS transistorBLF521
DEFINITIONS
Data Sheet Status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
November 199214
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