• Broadcast transmitter applications in the VHF frequency
range.
DESCRIPTION
Dual push-pull silicon N-channel enhancement mode
vertical D-MOS transistor encapsulated in a 4-lead,
SOT262A1 balanced flange package with two ceramic
caps. The mounting flange provides the common source
connection for the transistors.
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A, and
SNW-FQ-302B.
PINNING - SOT262A1
PINSYMBOLDESCRIPTION
1d
2d
3g
4g
1
2
1
2
drain 1
drain 2
gate 1
gate 2
5ssource
12
g
g
55
Top view
34
MAM098
Fig.1 Simplified outline and symbol.
d
s
d
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
CW, class-AB
=25°C in a push-pull common source test circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
L
22550250
G
(dB)
p
∆G
(dB)
p
(1)
η
(%)
D
>14<1>50
typ. 16typ. 0.6typ. 55
Note
1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized
input / 25% synchronized output compression in television service (negative modulation, CCIR system).
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1998 Jul 292
Page 3
Philips SemiconductorsProduct specification
VHF push-pull power MOS transistorBLF378
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
Per transistor section unless otherwise specified
V
DSS
V
GSS
I
D
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOLPARAMETERCONDITIONSVALUEUNIT
R
th j-mb
R
th mb-h
drain-source voltage−110V
gate-source voltage−±20V
drain current (DC)−18A
total power dissipation Tmb≤ 25 °C total device; both sections equally loaded −500W
storage temperature−65150°C
junction temperature−200°C
thermal resistance from junction to mounting base total device; both sections
0.35K/W
equally loaded
thermal resistance from mounting base to heatsink total device; both sections
0.15K/W
equally loaded
100
handbook, halfpage
I
D
(A)
(1)
10
1
110100
Total device; both sections equally loaded.
(1) Current is this area may be limited by R
(2) Tmb=25°C.
Fig.2 DC SOAR.
(2)
DSon
MRA988
V (V)
DS
.
500
500
handbook, halfpage
P
tot
(W)
400
300
200
100
0
04080160
Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short-time operation during mismatch.
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines L1, L3 to L13, L18 to L22 and L24 are on a double copper-clad printed-circuit board with glass
microfibre PTFE dielectric (εr= 2.2); thickness1⁄16inch; thickness of copper sheet 2 × 35 µm.
3. Semi-rigid cables L2 and L23 are soldered on to striplines L1 and L24.
1998 Jul 2910
Page 11
Philips SemiconductorsProduct specification
VHF push-pull power MOS transistorBLF378
handbook, full pagewidth
strap
strap
L1
50 Ω
input
V
DD1
Hollow
rivets
R1
C30
C23
C32
C26
C31
130
C33
L23
C34
R10
L22
L24
Hollow
rivets
strap
strap
MBC436
100
50 Ω
output
119
C15
C18
strap
strap
C24
C14
L14
R8
L14
L15
L18
C28
C21
L19
L16
L17
R9
L17
C25C27
C19
V
L20
L21
V
C22
DD1
C29
DD2
strap
strap
to R2,R7
C38
slider R2
C3
C4
slider R7
IC1
C35
C5
L4
L5
C10
C13
C36
C37
C6
C11
R3
R6
C12
C16
R4
L8L6
L7 L9
R5
C17
C9
C8
C7
L10
L11
L12
C20
L13
R11
L2
C1
C2
L3
Dimensions in mm.
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth.
Earth connections are made by means of copper straps for a direct contact between upper and lower sheets.
Fig.13 Printed-circuit board and component layout for 225 MHz class-AB test circuit.
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
5.85
5.58
c
0.16
0.10
0.006
0.004
Db
21.98
21.71
0.865
0.855
EE
eU
10.27
11.05
10.05
0.404
0.435
0.396
1
10.29
10.03
0.405
0.395
UNIT
mm
inches
A
5.77
5.00
0.227
0.197
0.230
0.220
43
scale
H
20.58
20.06
0.81
0.79
w
3
H
1
17.02
16.51
0.67
0.65
M
b
0510 mm
F
1.78
1.52
0.070
0.060
B
C
C
p
w
1
p
Q
3.28
2.85
3.02
2.59
0.129
0.112
0.119
0.102
c
E
1
M
AB
Q
qw
U
1
34.17
27.94
33.90
1.345
1.335
w
1
2
9.91
9.65
0.390
0.380
E
w
3
2
0.250.511.02
0.010.020.041.100
OUTLINE
VERSION
SOT262A197-06-28
IEC JEDEC EIAJ
REFERENCES
EUROPEAN
PROJECTION
1998 Jul 2913
ISSUE DATE
Page 14
Philips SemiconductorsProduct specification
VHF push-pull power MOS transistorBLF378
DEFINITIONS
Data Sheet Status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jul 2914
Page 15
Philips SemiconductorsProduct specification
VHF push-pull power MOS transistorBLF378
NOTES
1998 Jul 2915
Page 16
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
Printed in The Netherlands125108/00/03/pp16 Date of release: 1998 Jul 29Document order number: 9397 750 04189
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