Datasheet BLF378 Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF378
VHF push-pull power MOS transistor
Product specification Supersedes data of 1996 Oct 17
1998 Jul 29
Page 2
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF378

FEATURES

High power gain
Easy power control
Good thermal stability
Gold metallization ensures excellent reliability.

APPLICATIONS

Broadcast transmitter applications in the VHF frequency range.

DESCRIPTION

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

PINNING - SOT262A1

PIN SYMBOL DESCRIPTION
1d 2d 3g 4g
1 2 1 2
drain 1 drain 2 gate 1 gate 2
5 s source
12
g g
55
Top view
34
MAM098
Fig.1 Simplified outline and symbol.
d
s
d

QUICK REFERENCE DATA

RF performance at T
MODE OF OPERATION
CW, class-AB
=25°C in a push-pull common source test circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
L
225 50 250
G
(dB)
p
G
(dB)
p
(1)
η
(%)
D
>14 <1 >50
typ. 16 typ. 0.6 typ. 55
Note
1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized
input / 25% synchronized output compression in television service (negative modulation, CCIR system).
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1998 Jul 29 2
Page 3
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF378

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor section unless otherwise specified
V
DSS
V
GSS
I
D
P
tot
T
stg
T
j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
drain-source voltage 110 V gate-source voltage −±20 V drain current (DC) 18 A total power dissipation Tmb≤ 25 °C total device; both sections equally loaded − 500 W storage temperature 65 150 °C junction temperature 200 °C
thermal resistance from junction to mounting base total device; both sections
0.35 K/W
equally loaded
thermal resistance from mounting base to heatsink total device; both sections
0.15 K/W
equally loaded
100
handbook, halfpage
I
D
(A)
(1)
10
1
1 10 100
Total device; both sections equally loaded. (1) Current is this area may be limited by R (2) Tmb=25°C.
Fig.2 DC SOAR.
(2)
DSon
MRA988
V (V)
DS
.
500
500
handbook, halfpage
P
tot
(W)
400
300
200
100
0
0 40 80 160
Total device; both sections equally loaded. (1) Continuous operation. (2) Short-time operation during mismatch.
(1)
Fig.3 Power derating curves.
(2)
120
MGE616
Th (°C)
1998 Jul 29 3
Page 4
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF378

CHARACTERISTICS

T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor section
V
(BR)DSS
I
DSS
I
GSS
V
GSth
V
GS
g
fs
g
fs1/gfs2
R
DSon
I
DSX
C
is
C
os
C
rs
C
d-f
drain-source breakdown voltage VGS= 0; ID=50mA 110 −−V drain-source leakage current VGS= 0; VDS=50V −−2.5 mA gate-source leakage current VGS= ±20 V; VDS=0 −−1µA gate-source threshold voltage ID= 50 mA; VDS=10V 2.0 4.5 V gate-source voltage difference
ID= 50 mA; VDS=10V −−100 mV
of both transistor sections forward transconductance ID= 5 A; VDS= 10 V 4.5 6.2 S forward transconductance ratio
ID= 5 A; VDS= 10 V 0.9 1.1
of both transistor sections drain-source on-state resistance ID= 5 A; VGS=10V 0.2 0.3 on-state drain current VGS= 10 V; VDS=10V 25 A input capacitance VGS= 0; VDS= 50 V; f = 1 MHz 480 pF output capacitance VGS= 0; VDS= 50 V; f = 1 MHz 190 pF feedback capacitance VGS= 0; VDS= 50 V; f = 1 MHz 14 pF drain-flange capacitance 5.4 pF
handbook, halfpage
0
T.C.
(mV/K)
1
2
3
4
5
10
VDS=10V.
2
1
10
110
ID (A)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current; typical values per section.
MGE623
30
handbook, halfpage
I
D
(A)
20
10
0
0
VDS= 10V; Tj=25°C.
5
10
MGE622
VGS (V)
Fig.5 Drain current as a function of gate-source
voltage; typical values per section.
15
1998 Jul 29 4
Page 5
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF378
400
handbook, halfpage
R
DSon
(m)
300
200
100
0
0 50 100 150
ID= 5A; VGS=10V.
Tj (°C)
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical values per section.
MGE621
C
is
C
os
VDS (V)
MGE615
1200
handbook, halfpage
C
(pF)
800
400
0
0
VGS= 0; f= 1 MHz.
20
40
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values per section.
60
400
handbook, halfpage
C
rs
(pF)
300
200
100
0
010 50
VGS= 0; f = 1 MHz.
20 30 40
VDS (V)
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values per section.
MGE620
1998 Jul 29 5
Page 6
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF378
APPLICATION INFORMATION Class-AB operation
RF performance in CW operation in a common source class-AB circuit. T otherwise specified. R
= 2.8 per section; optimum load impedance per section = 0.74 + j2 (VDS=50V).
GS
=25°C; R
h
= 0.15 K/W unless
th mb-h
MODE OF OPERATION
f
(MHz)
V
(V)
DS
I
DQ
(A)
P
(W)
L
G
p
(dB)
G
(dB)
p
(1)
η
(%)
D
CW, class-AB 225 50 2 × 0.5 250 >14 <1 >50
typ. 16 typ. 0.6 typ. 55
225 45 2 × 0.5 250 typ. 15 typ. 1 typ. 60
Note
1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized
input / 25% synchronized output compression in television service (negative modulation, CCIR system).

Ruggedness in class-AB operation

The BLF378 is capable of withstanding a load mismatch corresponding to VSWR =7:1 through all phases under the conditions: V
= 50 V; f = 225 MHz at rated output power.
DS
1998 Jul 29 6
Page 7
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF378
20
handbook, halfpage
G
p
(dB)
10
0
0 100 200 300
Class-AB operation; VDS= 50 V; IDQ=2×0.5 A; f = 225 MHz;
= 0.74 + j2 (per section); RGS= 2.8 (per section).
Z
L
(1) Th=25°C. (2) Th=70°C.
(1)
(2)
PL (W)
Fig.9 Power gain as a function of load power;
typical values per section.
MGE614
60
handbook, halfpage
η
D
(%)
40
20
0
0
Class-AB operation; VDS= 50 V; IDQ=2×0.5 A; f = 225 MHz;
= 0.74 + j2 (per section); RGS= 2.8 (per section).
Z
L
(1) Th=25°C. (2) Th=70°C.
(1)
(2)
100 200
PL (W)
Fig.10 Efficiency as a function of load power;
typical values per section.
MGE612
300
400
handbook, halfpage
P
L
(W)
300
(1)
200
100
0
0 5 10 15
Class-AB operation; VDS= 50 V; IDQ=2×0.5 A; f = 225 MHz;
= 0.74 + j2 (per section); RGS= 2.8 (per section).
Z
L
(1) Th=25°C. (2) Th=70°C.
(2)
MGE613
Pi (W)
Fig.11 Load power as a function of input power;
typical values per section.
1998 Jul 29 7
Page 8
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1998 Jul 29 8
R2
, full pagewidth
+V
DD1
C14
C22
C23
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF378
50 input
+V
L2
DD1
L14R8
C24
L15
C21 C28 C29 C30
C20
L19 L21
L16
C25
L17
C26
C27
L20L18L12
C31
C32
C33
R10
C34
L22
L24
L23
MGE617
50 output
R3
C8
R4
L6 L8 L10
C6 C7
L7 L9 L11
C9
R6
R7
C36
C10
C11
R5
C12
C13
C15
C16
D.U.T.
L13
C17
C18
R9
C19
A
C1
C2
C38
R1
C3
C4
IC1
L4
C5
L5L3
A
C35
C37
L1
R11
f = 225 MHz.
+V
DD2
Fig.12 Test circuit for class-AB operation.
Page 9
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF378

List of components class-AB test circuit (see Figs 12 and 13).

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
C1, C2 multilayer ceramic chip capacitor;
note 1
C3, C4, C31, C32 multilayer ceramic chip capacitor;
note 1 C5 film dielectric trimmer 4 to 40 pF 2222 809 08002 C6, C30 film dielectric trimmer 2 to 18 pF 2222 809 09006 C7 multilayer ceramic chip capacitor;
note 1 C8, C9, C15, C18 MKT film capacitor 1 µF, 63 V 2222 371 11105 C10, C13, C14,
C19, C36 C11, C12 multilayer ceramic chip capacitor;
C16, C17 electrolytic capacitor 220 µF, 63 V C20 multilayer ceramic chip capacitor;
C21 film dielectric trimmer 2 to 9 pF 2222 809 09005 C22, C27, C37,
C38 C23, C26, C35 electrolytic capacitor 10 µF, 63 V C24, C25 multilayer ceramic chip capacitor;
C28 multilayer ceramic chip capacitor;
C29 multilayer ceramic chip capacitor;
C33, C34 multilayer ceramic chip capacitor;
L1, L3, L22, L24 stripline; note 2 50 4.8 × 80 mm L2, L23 semi-rigid cable; note 3 50 ext. conductor
L4, L5 stripline; note 2 43 6 × 24 mm L6, L7 stripline; note 2 43 6 × 14.5 mm L8, L9 stripline; note 2 43 6 × 4.4 mm L10, L11 stripline; note 2 43 6 × 3.2 mm L12, L13 stripline; note 2 43 6 × 15 mm L14, L17 grade 3B Ferroxcube wideband HF
L15, L16 1
multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104
note 1
note 1
multilayer ceramic chip capacitor;
note 1
note 1
note 1
note 1
note 1
choke
3
⁄4 turns enamelled 2 mm copper
wire
27 pF, 500 V
3 × 18 pF in parallel, 500 V
100 pF, 500 V
2 × 1 nF in parallel, 500 V
3 × 33 pF in parallel, 500 V
1 nF, 500 V
2 × 470 pF in parallel, 500 V
2 × 10 pF in parallel + 18 pF, 500 V
2 × 5.6 pF in parallel, 500 V
5.6 pF, 500 V
length 80 mm ext. dia 3.6 mm
2 in parallel 4312 020 36642
40 nH space 1 mm
int. dia. 10 mm leads 2 × 7mm
1998 Jul 29 9
Page 10
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF378
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
L18, L19 stripline; note 2 43 6 × 13 mm L20, L21 stripline; note 2 43 6 × 29.5 mm R1 metal film resistor 4 × 0.4 W, 10 R2, R7 10 turns potentiometer 50 k R3, R6 metal film resistor 0.4 W, 1 k R4, R5 metal film resistor 2 × 0.4 W,
5.62 in parallel R8, R9 metal film resistor 1 W, 10 , ±5% R10 metal film resistor 4 × 1W,10Ω in
parallel R11 metal film resistor 1 W, 5.11 k IC1 voltage regulator 78L05
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines L1, L3 to L13, L18 to L22 and L24 are on a double copper-clad printed-circuit board with glass microfibre PTFE dielectric (εr= 2.2); thickness1⁄16inch; thickness of copper sheet 2 × 35 µm.
3. Semi-rigid cables L2 and L23 are soldered on to striplines L1 and L24.
1998 Jul 29 10
Page 11
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF378
handbook, full pagewidth
strap
strap
L1
50 input
V
DD1
Hollow
rivets
R1
C30
C23
C32
C26
C31
130
C33
L23
C34
R10
L22
L24
Hollow
rivets
strap
strap
MBC436
100
50 output
119
C15
C18
strap
strap
C24
C14
L14
R8
L14
L15
L18
C28
C21
L19
L16
L17
R9
L17
C25 C27
C19
V
L20 L21
V
C22
DD1
C29
DD2
strap
strap
to R2,R7
C38
slider R2
C3
C4
slider R7
IC1
C35
C5
L4 L5
C10
C13
C36
C37
C6
C11
R3
R6
C12
C16
R4
L8L6
L7 L9
R5
C17
C9
C8
C7
L10
L11
L12 C20 L13
R11
L2
C1
C2
L3
Dimensions in mm.
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections are made by means of copper straps for a direct contact between upper and lower sheets.
Fig.13 Printed-circuit board and component layout for 225 MHz class-AB test circuit.
1998 Jul 29 11
Page 12
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF378
handbook, halfpage
2
z
i
()
1
0
1
–2
150 200 250
Class-AB operation; VDS= 50 V; IDQ=2×0.5 A;
= 2.8 (per section); PL= 250 W.
R
GS
r
i
x
i
f (MHz)
MGE611
Fig.14 Input impedance as a function of frequency
(series components); typical values per section.
handbook, halfpage
3
X
Z
L
()
2
1
0
150 250200
Class-AB operation; VDS= 50 V; IDQ=2×0.5 A;
= 2.8 (per section); PL= 250 W.
R
GS
L
R
L
f (MHz)
MGE625
Fig.15 Load impedance as a function of frequency
(series components); typical values per section.
20
handbook, halfpage
G
p
(dB)
10
0
150 200 250
Class-AB operation; VDS= 50 V; IDQ=2×0.5 A;
= 2.8 (per section); PL= 250 W.
R
GS
f (MHz)
Fig.16 Power gain as a function of frequency;
typical values per section.
MGE624
1998 Jul 29 12
Page 13
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF378

PACKAGE OUTLINE

Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A1

D
A
F
U
1
q
H
1
w
2
M
12
H
U
2
5
A
e
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
5.85
5.58
c
0.16
0.10
0.006
0.004
Db
21.98
21.71
0.865
0.855
EE
e U
10.27
11.05
10.05
0.404
0.435
0.396
1
10.29
10.03
0.405
0.395
UNIT
mm
inches
A
5.77
5.00
0.227
0.197
0.230
0.220
43
scale
H
20.58
20.06
0.81
0.79
w
3
H
1
17.02
16.51
0.67
0.65
M
b
0 5 10 mm
F
1.78
1.52
0.070
0.060
B
C
C
p
w
1
p
Q
3.28
2.85
3.02
2.59
0.129
0.112
0.119
0.102
c
E
1
M
AB
Q
qw
U
1
34.17
27.94
33.90
1.345
1.335
w
1
2
9.91
9.65
0.390
0.380
E
w
3
2
0.250.51 1.02
0.010.02 0.041.100
OUTLINE
VERSION
SOT262A1 97-06-28
IEC JEDEC EIAJ
REFERENCES
EUROPEAN
PROJECTION
1998 Jul 29 13
ISSUE DATE
Page 14
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF378

DEFINITIONS

Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Jul 29 14
Page 15
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF378
NOTES
1998 Jul 29 15
Page 16
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Printed in The Netherlands 125108/00/03/pp16 Date of release: 1998 Jul 29 Document order number: 9397 750 04189
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