Datasheet BLF368 Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF368
VHF push-pull power MOS transistor
Product specification Supersedes data of September 1992
1998 Jul 29
Page 2
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
FEATURES
High power gain
Easy power control
Good thermal stability
Gold metallization ensures
excellent reliability.
DESCRIPTION
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range.
The transistor is encapsulated in a 4-lead SOT262A1 balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the transistors.
PINNING - SOT262A1
PIN CONFIGURATION
dbook, halfpage
12
g
2
g
1
55
Top view
34
MSB008
MBB157
d
2
s
d
1
Fig.1 Simplified outline and symbol.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING
PIN DESCRIPTION
1 drain 1 2 drain 2 3 gate 1 4 gate 2 5 source
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
=25°C in a push-pull common source test circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
G
L
G
p
(dB)
p
(dB)
(note 1)
η
(%)
D
CW, class-AB 225 32 300 >12 >1 >55
typ. 13.5 typ. 0.4 typ. 62
Note
1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized input/25% synchronized output compression in television service (negative modulation, CCIR system).
1998 Jul 29 2
Page 3
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor section unless otherwise specified
V
DSS
V
GSS
I
D
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
drain-source voltage 65 V gate-source voltage −±20 V drain current (DC) 25 A total power dissipation Tmb≤ 25 °C total device; both sections equally loaded − 500 W storage temperature 65 150 °C junction temperature 200 °C
thermal resistance from junction to mounting base total device; both sections
0.35 K/W
equally loaded
thermal resistance from mounting base to heatsink total device; both sections
0.15 K/W
equally loaded
2
10
handbook, halfpage
I
D
(A)
(1)
10
1
110
(1) Current in this area may be limited by R (2) Tmb=25°C. Total device; both sections equally loaded.
Fig.2 DC SOAR.
MRA933
(2)
2
.
(V)
10
V
DS
DSon
500
handbook, halfpage
P
tot
(W)
400
300
200
100
0
0 40 80 160
(1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded.
(1)
(2)
Fig.3 Power/temperature derating curves.
120
MGE616
Th (°C)
1998 Jul 29 3
Page 4
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor section
V
(BR)DSS
I
DSS
I
GSS
V
GSth
V
GS
g
fs
g
fs1/gfs2
R
DSon
I
DSX
C
is
C
os
C
rs
C
d-f
drain-source breakdown voltage VGS= 0; ID= 100 mA 65 −−V drain-source leakage current VGS= 0; VDS=32V −−5mA gate-source leakage current VGS= ±20 V; VDS=0 −−1µA gate-source threshold voltage ID= 100 mA; VDS=10V 2 4.5 V gate-source voltage difference of
ID= 100 mA; VDS=10V −−100 mV
both transistor sections forward transconductance ID= 8 A; VDS= 10 V 5 7.5 S forward transconductance ratio
ID= 8 A; VDS= 10 V 0.9 1.1
of both transistor sections drain-source on-state resistance ID= 8 A; VDS=10V 0.1 0.15 on-state drain current VGS= 10 V; VDS=10V 37 A input capacitance VGS= 0; VDS=32V; f=1MHz 495 pF output capacitance VGS= 0; VDS=32V; f=1MHz 340 pF feedback capacitance VGS= 0; VDS=32V; f=1MHz 40 pF drain-flange capacitance 5.4 pF
handbook, halfpage
0
T.C.
(mV/K)
1
2
3
4
5
1
10
VDS=10V.
110
I
(A)
D
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current; typical values per section.
MGP229
15
MGP230
VGS (V)
60
handbook, halfpage
I
D
(A)
40
20
0
0 5 10 20
VDS= 10V; Tj=25°C.
Fig.5 Drain current as a function of gate-source
voltage; typical values per section.
1998 Jul 29 4
Page 5
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
200
handbook, halfpage
R
DSon
(m)
150
100
50
0 50 100 150
VGS= 10 V; ID=8A.
Tj (°C)
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical values per section.
MGP231
1500
handbook, halfpage
C
(pF)
1000
500
0
01020 40
VGS= 0; f = 1 MHz.
C C
MGP234
is os
30
VDS (V)
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values per section.
600
handbook, halfpage
C
rs
(pF)
400
200
0
01020 40
VGS= 0; f = 1 MHz.
30
VDS (V)
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values per section.
MGP232
1998 Jul 29 5
Page 6
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
APPLICATION INFORMATION FOR CLASS-AB OPERATION
T
=25°C; R
h
class-AB circuit. R
MODE OF OPERA TION
CW, class-AB 225 32 2 × 250 300 >12 >1 >55
Note
1. Assuming a 3rd order amplitude transfer characteristic, 1 dB compression corresponds with 30% synchronized input/25% synchronized output compression in television service (negative modulation, CCIR system).
= 0.15 K/W unless otherwise specified. RF performance in CW operation in a common source
th mb-h
= 536 per section; optimum load impedance per section = 1.34 + j0.34 ; VDS=32V.
GS
G
f
(MHz)
V
(V)
DS
I
DQ
(mA)
P
(W)
L
G
p
(dB)
p
(dB)
(note 1)
typ. 13.5 typ. 0.4 typ. 62 225 28 2 × 250 300 typ. 13 typ. 0.7 typ. 68 225 35 2 × 250 300 typ. 14 typ. 0.2 typ. 60 175 28 2 × 250 300 typ. 15 typ. 0.5 typ. 70
η
(%)
D
Ruggedness in class-AB operation
The BLF368 is capable of withstanding a load mismatch corresponding to VSWR = 10 through all phases under the following conditions:
V
= 32 V; f = 225 MHz at rated output power.
DS
1998 Jul 29 6
Page 7
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
20
handbook, halfpage
G
p
(dB)
16
12
8
4
0 500
100 200 300 400
Class-AB operation; VDS= 32 V; IDQ=2×250 mA;
= 1.34 + j0.34 (per section); RGS= 536 (per section);
Z
L
f = 225 MHz. solid line: T
=25°C. dotted line: Th=70°C.
h
MGP239
PL (W)
Fig.9 Power gain as a function of load power;
typical values per section.
80
handbook, halfpage
η
D
(%)
60
40
20
0
0 100 500
Class-AB operation; VDS= 32 V; IDQ=2×250 mA;
= 1.34 + j0.34 (per section); RGS= 536 (per section);
Z
L
f = 225 MHz. solid line: T
=25°C. dotted line: Th=70°C.
h
200 300 400
Fig.10 Efficiency as a function of load power;
typical values per section.
MGP241
PL (W)
500
handbook, halfpage
P
L
(W)
400
300
200
100
0
0102030
Class-AB operation; VDS= 32 V; IDQ=2×250 mA;
= 1.34 + j0.34 (per section); RGS= 536 (per section);
Z
L
f = 225 MHz. solid line: T
=25°C. dotted line: Th=70°C.
h
MGP240
PIN (W)
Fig.11 Load power as a function of input power;
typical values per section.
1998 Jul 29 7
Page 8
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1998 Jul 29 8
R1
A
C6
C8
R2
C9
dbook, full pagewidth
V
DD1
C16
C12
C17
R7
C13
C18
L12
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
V
f = 225 MHz.
DD1
50 input
R9
C34
C14
C15
L10
L11
R8
V
DD2
L13
L16
L17
L14
C19
C20
C21
C25
C23C22 C24
C26
L15
MGP211
L19
C27
L20L18
L21
C28
C29
C30
L22
L24
L23
50
output
R3
D.U.T.
L7
C7
L8
L6L4
L9
R4
C10
R5
C11
R6
C31C32
L1
L2
L3
IC1
C1
C2
C4 C5
C3
L5
A
C33
Fig.12 Test circuit for class-AB operation.
Page 9
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
List of components class-AB test circuit (see Figs 12 and 13)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
C1, C2 multilayer ceramic chip capacitor
(note 1)
C3 film dielectric trimmer 2 to 9 pF 2222 809 09005 C4 multilayer ceramic chip capacitor
(note 1) C5 film dielectric trimmer 5 to 60 pF 2222 809 08003 C6, C7, C9, C10,
C12, C15, C31, C34 C8, C11, C16, C21,
C32 C17, C20, C33 electrolytic capacitor 10 µF, 63 V C22 multilayer ceramic chip capacitor
C23 multilayer ceramic chip capacitor
C24, C28 film dielectric trimmer 2 to 18 pF 2222 809 09006 C25, C26 multilayer ceramic chip capacitor
C27 multilayer ceramic chip capacitor
C29, C30 multilayer ceramic chip capacitor
L1, L3, L22, L24 stripline (note 2) 50 4.8 × 80 mm L2, L23 semi-rigid cable (note 3) 50 ext. conductor
L4, L5 stripline (note 2) 43 6 × 32.5 mm L6, L7 stripline (note 2) 43 6 × 10.5 mm L8, L9 stripline (note 2) 43 6 × 3mm L10, L11 stripline (note 2) 43 6 × 10.5 mm L12, L15 grade 3B Ferroxcube wideband
L13, L14 2 turns enamelled 1.6 mm copper wire 25 nH space 2.5 mm
L16, L17 stripline (notes 2 and 4) 43 6 × 3mm L18, L19 stripline (notes 2 and 4) 43 6 × 35 mm L20, L21 stripline (notes 2 and 4) 43 6 × 9mm R1, R6 10 turns potentiometer 50 k R2, R5 metal film resistor 0.4 W, 1 k R3, R4 metal film resistor 0.4 W, 536
multilayer ceramic chip capacitor
(note 1)
multilayer ceramic chip capacitor
(note 1)
(note 1)
(note 1)
(note 1)
(note 1)
(note 1)
HF choke
2 × 56 pF in parallel + 18 pF, 500 V
47 pF, 500 V
1 nF, 500 V 2222 852 47104
100 nF, 50 V
82 pF, 500 V
10 pF + 30 pF in parallel, 500 V
39 pF + 47 pF in parallel, 500 V
18 pF, 500 V
3 × 100 pF in parallel, 500 V
length 80 mm ext. dia 3.6 mm
2 in parallel 4312 020 36642
int. dia. 5 mm leads 2 × 7mm
1998 Jul 29 9
Page 10
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
R7, R8 metal film resistor 1 W, ±5%, 10 R9 metal film resistor 1 W, 3.16 k IC1 voltage regulator 78L05
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines L1, L3 - L11, L16 - L22 and L24 are on a double copper-clad printed circuit board with glass microfibre PTFE dielectric (εr= 2.2); thickness1⁄16inch; thickness of copper sheet 2 × 35 µm.
3. Semi-rigid cables L2 and L23 are soldered on to striplines L1 and L24.
4. A copper strap, thickness 0.8 mm, is soldered over the complete striplines L16 - L21 to avoid overheating by large RF currents.
1998 Jul 29 10
Page 11
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
handbook, full pagewidth
+V
L1
hollow rivets
L3
DD1
C17
C20
L20
C28
L21
130
C29
C30
copper strap
L23
L22
hollow rivets
L24
MGP213
119
100
to R1, R6
R9
L2
IC1
C34
C1
C3
C2
C11
C8
L4
L5
slider R1
C5
slider R6
copper strap
C31 C32
C33
C9
R2
C6
R3
L8
L6
C4
L7
L9
R4
R5
C10
C7
C18
L10
C13
L13
C25
L16
C23
C22
C24
L17
C26
L11
L14
C19
C14
C12
L12
R7
L12
hollow rivet
L18
L19
L15
R8
L15
C15 C21
C16
+V
DD1
C27
+V
DD2
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
Dimensions in mm.
Fig.13 Component layout for 225 MHz class-AB test circuit.
1998 Jul 29 11
Page 12
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
2
handbook, halfpage
Z
i
()
1
0
1
2
150 250
Class-AB operation; VDS= 32 V; IDQ=2×250 mA;
= 536 (per section); PL= 300 W.
R
GS
r
i
x
i
200
f (MHz)
MGP242
Fig.14 Input impedance as a function of frequency
(series components); typical values per section.
handbook, halfpage
2
Z
L
()
1
0
150 250
Class-AB operation; VDS= 32 V; IDQ=2×250 mA;
= 536 (per section); PL= 300 W.
R
GS
R
L
X
L
200
f (MHz)
MGP243
Fig.15 Load impedance as a function of frequency
(series components); typical values per section.
20
handbook, halfpage
G
p
(dB)
16
12
8
4
0
150 250
Class-AB operation; VDS= 32 V; IDQ=2×250 mA;
= 536 (per section); PL= 300 W.
R
GS
200
f (MHz)
Fig.16 Power gain as a function of frequency;
typical values per section.
MGP244
1998 Jul 29 12
Page 13
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
PACKAGE OUTLINE
Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A1
D
A
F
U
1
q
H
1
w
2
M
12
H
U
2
5
A
e
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
5.85
5.58
c
0.16
0.10
0.006
0.004
Db
21.98
21.71
0.865
0.855
EE
e U
10.27
11.05
10.05
0.404
0.435
0.396
1
10.29
10.03
0.405
0.395
UNIT
mm
inches
A
5.77
5.00
0.227
0.197
0.230
0.220
43
scale
H
20.58
20.06
0.81
0.79
w
3
H
1
17.02
16.51
0.67
0.65
M
b
0 5 10 mm
F
1.78
1.52
0.070
0.060
B
C
C
p
w
1
p
Q
3.28
2.85
3.02
2.59
0.129
0.112
0.119
0.102
c
E
1
M
AB
Q
qw
U
1
34.17
27.94
33.90
1.345
1.335
w
1
2
9.91
9.65
0.390
0.380
E
w
3
2
0.250.51 1.02
0.010.02 0.041.100
OUTLINE
VERSION
SOT262A1 97-06-28
IEC JEDEC EIAJ
REFERENCES
EUROPEAN
PROJECTION
1998 Jul 29 13
ISSUE DATE
Page 14
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Jul 29 14
Page 15
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF368
NOTES
1998 Jul 29 15
Page 16
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© Philips Electronics N.V. 1998 SCA60 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands 125108/00/03/pp16 Date of release: 1998 Jul 29 Document order number: 9397 75004188
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