Product specification
Supersedes data of September 1992
1998 Jul 29
Page 2
Philips SemiconductorsProduct specification
VHF push-pull power MOS transistorBLF368
FEATURES
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures
excellent reliability.
DESCRIPTION
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor, designed for broadcast
transmitter applications in the VHF
frequency range.
The transistor is encapsulated in a
4-lead SOT262A1 balanced flange
package, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PINNING - SOT262A1
PIN CONFIGURATION
dbook, halfpage
12
g
2
g
1
55
Top view
34
MSB008
MBB157
d
2
s
d
1
Fig.1 Simplified outline and symbol.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING
PINDESCRIPTION
1drain 1
2drain 2
3gate 1
4gate 2
5source
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
=25°C in a push-pull common source test circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
∆G
L
G
p
(dB)
p
(dB)
(note 1)
η
(%)
D
CW, class-AB22532300>12>1>55
typ. 13.5typ. 0.4typ. 62
Note
1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized
input/25% synchronized output compression in television service (negative modulation, CCIR system).
1998 Jul 292
Page 3
Philips SemiconductorsProduct specification
VHF push-pull power MOS transistorBLF368
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
Per transistor section unless otherwise specified
V
DSS
V
GSS
I
D
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOLPARAMETERCONDITIONSVALUEUNIT
R
th j-mb
R
th mb-h
drain-source voltage−65V
gate-source voltage−±20V
drain current (DC)−25A
total power dissipation Tmb≤ 25 °C total device; both sections equally loaded −500W
storage temperature−65150°C
junction temperature−200°C
thermal resistance from junction to mounting base total device; both sections
0.35K/W
equally loaded
thermal resistance from mounting base to heatsink total device; both sections
0.15K/W
equally loaded
2
10
handbook, halfpage
I
D
(A)
(1)
10
1
110
(1) Current in this area may be limited by R
(2) Tmb=25°C.
Total device; both sections equally loaded.
Fig.2 DC SOAR.
MRA933
(2)
2
.
(V)
10
V
DS
DSon
500
handbook, halfpage
P
tot
(W)
400
300
200
100
0
04080160
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
voltage as a function of drain current; typical
values per section.
MGP229
15
MGP230
VGS (V)
60
handbook, halfpage
I
D
(A)
40
20
0
051020
VDS= 10V; Tj=25°C.
Fig.5Drain current as a function of gate-source
voltage; typical values per section.
1998 Jul 294
Page 5
Philips SemiconductorsProduct specification
VHF push-pull power MOS transistorBLF368
200
handbook, halfpage
R
DSon
(mΩ)
150
100
50
050100150
VGS= 10 V; ID=8A.
Tj (°C)
Fig.6Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
MGP231
1500
handbook, halfpage
C
(pF)
1000
500
0
0102040
VGS= 0; f = 1 MHz.
C
C
MGP234
is
os
30
VDS (V)
Fig.7Input and output capacitance as functions
of drain-source voltage; typical values per
section.
600
handbook, halfpage
C
rs
(pF)
400
200
0
0102040
VGS= 0; f = 1 MHz.
30
VDS (V)
Fig.8Feedback capacitance as a function of
drain-source voltage; typical values per
section.
MGP232
1998 Jul 295
Page 6
Philips SemiconductorsProduct specification
VHF push-pull power MOS transistorBLF368
APPLICATION INFORMATION FOR CLASS-AB OPERATION
T
=25°C; R
h
class-AB circuit. R
MODE OF OPERA TION
CW, class-AB225322 × 250300>12>1>55
Note
1. Assuming a 3rd order amplitude transfer characteristic, 1 dB compression corresponds with 30% synchronized
input/25% synchronized output compression in television service (negative modulation, CCIR system).
= 0.15 K/W unless otherwise specified. RF performance in CW operation in a common source
th mb-h
= 536 Ω per section; optimum load impedance per section = 1.34 + j0.34 Ω; VDS=32V.
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines L1, L3 - L11, L16 - L22 and L24 are on a double copper-clad printed circuit board with glass microfibre
PTFE dielectric (εr= 2.2); thickness1⁄16inch; thickness of copper sheet 2 × 35 µm.
3. Semi-rigid cables L2 and L23 are soldered on to striplines L1 and L24.
4. A copper strap, thickness 0.8 mm, is soldered over the complete striplines L16 - L21 to avoid overheating by large
RF currents.
1998 Jul 2910
Page 11
Philips SemiconductorsProduct specification
VHF push-pull power MOS transistorBLF368
handbook, full pagewidth
+V
L1
hollow rivets
L3
DD1
C17
C20
L20
C28
L21
130
C29
C30
copper strap
L23
L22
hollow rivets
L24
MGP213
119
100
to R1, R6
R9
L2
IC1
C34
C1
C3
C2
C11
C8
L4
L5
slider R1
C5
slider R6
copper strap
C31
C32
C33
C9
R2
C6
R3
L8
L6
C4
L7
L9
R4
R5
C10
C7
C18
L10
C13
L13
C25
L16
C23
C22
C24
L17
C26
L11
L14
C19
C14
C12
L12
R7
L12
hollow rivet
L18
L19
L15
R8
L15
C15 C21
C16
+V
DD1
C27
+V
DD2
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as a ground plane.
Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
Dimensions in mm.
Fig.13 Component layout for 225 MHz class-AB test circuit.
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
5.85
5.58
c
0.16
0.10
0.006
0.004
Db
21.98
21.71
0.865
0.855
EE
eU
10.27
11.05
10.05
0.404
0.435
0.396
1
10.29
10.03
0.405
0.395
UNIT
mm
inches
A
5.77
5.00
0.227
0.197
0.230
0.220
43
scale
H
20.58
20.06
0.81
0.79
w
3
H
1
17.02
16.51
0.67
0.65
M
b
0510 mm
F
1.78
1.52
0.070
0.060
B
C
C
p
w
1
p
Q
3.28
2.85
3.02
2.59
0.129
0.112
0.119
0.102
c
E
1
M
AB
Q
qw
U
1
34.17
27.94
33.90
1.345
1.335
w
1
2
9.91
9.65
0.390
0.380
E
w
3
2
0.250.511.02
0.010.020.041.100
OUTLINE
VERSION
SOT262A197-06-28
IEC JEDEC EIAJ
REFERENCES
EUROPEAN
PROJECTION
1998 Jul 2913
ISSUE DATE
Page 14
Philips SemiconductorsProduct specification
VHF push-pull power MOS transistorBLF368
DEFINITIONS
Data Sheet Status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jul 2914
Page 15
Philips SemiconductorsProduct specification
VHF push-pull power MOS transistorBLF368
NOTES
1998 Jul 2915
Page 16
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
Printed in The Netherlands125108/00/03/pp16 Date of release: 1998 Jul 29Document order number: 9397 75004188
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