Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor, designed for broadcast
transmitter applications in the VHF
frequency range.
The transistor is encapsulated in a
4-lead, SOT262 A1 balanced flange
envelope, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PINNING − SOT262A1
PIN CONFIGURATION
, halfpage
12
g
2
g
1
55
Top view
34
MSB008
MBB157
d
2
s
d
1
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
PINDESCRIPTION
1drain 1
2drain 2
3gate 1
4gate 2
5source
Product and environment safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance in a push-pull common source test circuit.
d
im
(dB)
(note 1)
P
o sync
(W)
G
(dB)
p
MODE OF OPERATION
f
vision
(MHz)
V
(V)
DS
I
(A)
D
T
h
(°C)
class-A224.25282 × 4.670−52> 67> 11
224.25282 × 4.625−52typ. 75typ. 13
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal−16 dB), zero dB corresponds to
peak synchronization level.
October 19922
Page 3
Philips SemiconductorsProduct specification
VHF linear push-pull power MOS transistorBLF348
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
V
DSS
±V
GSS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
drain-source voltage−65V
gate-source voltage−20V
DC drain current−25A
total power dissipationup to Tmb = 25 °C; total device;
−500W
both sections equally loaded
storage temperature−65150°C
junction temperature−200°C
SYMBOLPARAMETERCONDITIONS
R
th j-mb
R
th mb-h
2
10
handbook, halfpage
I
D
(A)
10
1
110
thermal resistance from junction to
mounting base
thermal resistance from mounting
base to heatsink
(1)
(2)
V
(V)
DS
MRA933
total device;
both sections equally loaded
total device;
both sections equally loaded
500
handbook, halfpage
P
tot
(W)
400
300
200
100
2
10
0
04080160
(1)
(2)
THERMAL
RESISTANCE
0.35 K/W
0.15 K/W
MGE616
120
Th (°C)
(1) Current is this area may be limited by R
(2) Tmb=25°C.
Total device; both sections equally loaded.
DS(on)
.
Fig.2 DC SOAR.
October 19923
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
L4, L5stripline (note 2)43 Ω6 × 32 mm
L6, L7stripline (note 2)43 Ω6 × 7 mm
L8, L9stripline (note 2)43 Ω6 × 7 mm
L10, L13grade 3B Ferroxcube wideband
L11, L123/4 turn enamelled 2 mm copper
L14, L15stripline (notes 2 and 4)43 Ω6 × 6 mm
L16, L17stripline (notes 2 and 4)43 Ω6 × 9.5 mm
L18, L19stripline (notes 2 and 4)43 Ω6 × 27.5 mm
L20, L21stripline (notes 2 and 4)43 Ω6 × 13 mm
R1, R610 turns Bourns potentiometer50 kΩ
R2, R50.4 W metal film resistor1 kΩ
R3, R40.4 W metal film resistor82 Ω
R7, R81 W, ±5% metal film resistor10 Ω
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines L1, L3 - L9, L14 - L22 and L24 are on a double copper-clad printed circuit board with glass microfibre
PTFE dielectric (εr = 2.2); thickness1⁄16inch; thickness of copper sheet 2 x 35 µm.
3. Semi-rigid cables L2 and L23 are soldered on to striplines L1 and L24.
4. A copper strap, thickness 0.8 mm, is soldered on to striplines L14 - L21.
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
5.85
5.58
c
0.16
0.10
0.006
0.004
Db
21.98
21.71
0.865
0.855
EE
eU
10.27
11.05
10.05
0.404
0.435
0.396
1
10.29
10.03
0.405
0.395
UNIT
mm
inches
A
5.77
5.00
0.227
0.197
0.230
0.220
43
scale
H
20.58
20.06
0.81
0.79
w
3
H
17.02
16.51
0.67
0.65
M
1
b
0510 mm
F
1.78
1.52
0.070
0.060
B
C
C
p
w
1
p
Q
3.28
2.85
3.02
2.59
0.129
0.112
0.119
0.102
c
E
1
M
AB
Q
qw
U
1
34.17
27.94
33.90
1.345
1.335
w
1
2
9.91
9.65
0.390
0.380
E
w
3
2
0.250.511.02
0.010.020.041.100
OUTLINE
VERSION
SOT262A197-06-28
IEC JEDEC EIAJ
REFERENCES
EUROPEAN
PROJECTION
October 199211
ISSUE DATE
Page 12
Philips SemiconductorsProduct specification
VHF linear push-pull power MOS transistorBLF348
DEFINITIONS
Data Sheet Status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
October 199212
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