Datasheet BLF348 Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF348
VHF linear push-pull power MOS transistor
Product specification
October 1992
Page 2
VHF linear push-pull power MOS transistor BLF348

FEATURES

High power gain
Easy power control
Good thermal stability
Gold metallization ensures
excellent reliability.

DESCRIPTION

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range.
The transistor is encapsulated in a 4-lead, SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors.
PINNING SOT262A1

PIN CONFIGURATION

, halfpage
12
g
2
g
1
55
Top view
34
MSB008
MBB157
d
2
s
d
1
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling.
WARNING
PIN DESCRIPTION
1 drain 1 2 drain 2 3 gate 1 4 gate 2 5 source
Product and environment safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance in a push-pull common source test circuit.
d
im
(dB)
(note 1)
P
o sync
(W)
G
(dB)
p
MODE OF OPERATION
f
vision
(MHz)
V
(V)
DS
I
(A)
D
T
h
(°C)
class-A 224.25 28 2 × 4.6 70 52 > 67 > 11
224.25 28 2 × 4.6 25 52 typ. 75 typ. 13
Note
1. Three-tone test method (vision carrier 8 dB, sound carrier 7 dB, sideband signal16 dB), zero dB corresponds to peak synchronization level.
October 1992 2
Page 3
VHF linear push-pull power MOS transistor BLF348

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
±V
GSS
I
D
P
tot
T
stg
T
j

THERMAL RESISTANCE

drain-source voltage 65 V gate-source voltage 20 V DC drain current 25 A total power dissipation up to Tmb = 25 °C; total device;
500 W
both sections equally loaded storage temperature 65 150 °C junction temperature 200 °C
SYMBOL PARAMETER CONDITIONS
R
th j-mb
R
th mb-h
2
10
handbook, halfpage
I
D
(A)
10
1
110
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
(1)
(2)
V
(V)
DS
MRA933
total device; both sections equally loaded
total device; both sections equally loaded
500
handbook, halfpage
P
tot
(W)
400
300
200
100
2
10
0
0 40 80 160
(1)
(2)
THERMAL
RESISTANCE
0.35 K/W
0.15 K/W
MGE616
120
Th (°C)
(1) Current is this area may be limited by R (2) Tmb=25°C. Total device; both sections equally loaded.
DS(on)
.
Fig.2 DC SOAR.
October 1992 3
(1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded.
Fig.3 Power/temperature derating curves.
Page 4
VHF linear push-pull power MOS transistor BLF348
CHARACTERISTICS (per section)
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
V
GS(th)
g
fs
g
fs1/gfs2
R
DS(on)
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage VGS = 0; ID = 0.1 A 65 −− V drain-source leakage current VGS = 0; VDS = 28 V −−5mA gate-source leakage current ±VGS = 20 V; VDS = 0 −−1 µA gate-source threshold voltage ID = 0.1 A; VDS = 10 V 2 4.5 V gate-source voltage difference of
ID = 0.1 A; VDS = 10 V −−100 mV
both transistor sections forward transconductance ID = 8 A; VDS = 10 V 5 7.5 S forward transconductance ratio of
ID = 8 A; VDS = 10 V 0.9 1.1
both transistor sections drain-source on-state resistance ID = 8 A; VGS = 10 V 0.1 0.15 on-state drain current VGS = 10 V; VDS = 10 V 37 A input capacitance VGS = 0; VDS = 28 V; f = 1 MHz 495 pF output capacitance VGS = 0; VDS = 28 V; f = 1 MHz 340 pF feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz 40 pF
handbook, halfpage
0
T.C.
(mV/K)
1
2
3
4
5
1
10
VDS= 10 V.
110
I
(A)
D
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical values per section.
MGP229
15
MGP230
VGS (V)
60
handbook, halfpage
I
D
(A)
40
20
0
0 5 10 20
VDS= 10 V; Tj=25°C.
Fig.5 Drain current as a function of gate-source
voltage, typical values per section.
October 1992 4
Page 5
VHF linear push-pull power MOS transistor BLF348
200
handbook, halfpage
R
DSon
(m)
150
100
50
0 50 100 150
ID= 8 A; VGS= 10 V.
Tj (°C)
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical values per section.
MGP231
30
MGP234
VDS (V)
1500
handbook, halfpage
C
(pF)
1000
500
0
01020 40
VGS= 0; f = 1 MHz.
C
is
C
os
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values per section.
600
handbook, halfpage
C
rs
(pF)
400
200
0
01020 40
VGS= 0; f = 1 MHz.
30
VDS (V)
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values per section.
MGP232
P
o sync
MGP233
50
handbook, halfpage
d
im
(dB)
55
60
65
70
Th = 70 °C
25 °C
503010 70
Fig.9 Intermodulation distortion as a function of
peak synchronized output power.
(W)
90
October 1992 5
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VHF linear push-pull power MOS transistor BLF348

APPLICATION INFORMATION FOR CLASS-A OPERATION

T
= 70 °C; R
h
RF performance in a linear amplifier (common source circuit class-A circuit). R
= 82 per section; optimum load impedance per section = 0.14 + j0.14 .
GS
MODE OF OPERATION
class-A 224.25 28 2 × 4.6 70 52 > 67
Note
1. Three-tone test method (vision carrier 8 dB, sound carrier 7 dB, sideband signal 16 dB), zero dB corresponds to peak synchronization level.
= 0.15 K/W unless otherwise specified.
th mb-h
f
vision
(MHz)
224.25 28 2 × 4.6 25 52 typ. 75 typ. 13
224.25 28 2 × 4.6 70 55 > 54
224.25 28 2 × 4.6 25 55 typ. 62 typ. 13
V
(V)
DS
I
(A)
d
D
T
h
(°C)
im
(dB)
(note 1)
P
o sync
(W)
G
(dB)
p
> 11
typ. 70
typ. 12.5
> 11
typ. 57
typ.12.5

Ruggedness in class-A operation

The BLF348 is capable of withstanding a load mismatch corresponding to VSWR = 20 through all phases under the following conditions:
V
= 28 V; f = 224.25 MHz at rated output power.
DS
October 1992 6
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October 1992 7
C6
R1
book, full pagewidth
+V
DD1
C20
C14
C21
Philips Semiconductors Product specification
VHF linear push-pull power MOS transistor BLF348
50 input
C1
R8
R7
C23
L11
L12
C24
L10
C22
C28
C29 C30
C31
C25
L13
L20L18
C34
C32 C33
C35
L21L19L15 L17L9
L22
L24
L23
50
output
C36
C8
C7
L7
C10
R2
C11
R3
D.U.T.
L8L6L4
C5
BFL348
R4
C12
R5
C13
C15
C16
L14 L16
C17
C18
+5 V
L1
L2
L3
C2
C4
C3
L5
+5 V
f = 225 MHz.
C26
C9
R6
C19
+V
C27
DD2
Fig.10 Test circuit for class-A operation.
MGP235
Page 8
VHF linear push-pull power MOS transistor BLF348
List of components (class-A test circuit)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1 film dielectric trimmer 2 to 9 pF 2222 809 09006 C2, C3 multilayer ceramic chip capacitor
(note 1) C4, C30 film dielectric trimmer 5 to 60 pF 2222 809 08003 C5 multilayer ceramic chip capacitor
(note 1) C6, C9, C10, C13,
C14, C19 C11, C12, C20,
C27 C7, C8, C16, C17 MKT film capacitor 1 µF 2222 371 11105 C21, C26 electrolytic capacitor 10 µF,63 V C22, C25 electrolytic capacitor 220 µF,63 V C15, C18, C23,
C24 C28, C31 multilayer ceramic chip capacitor
C29 multilayer ceramic chip capacitor
C32 multilayer ceramic chip capacitor
C33 multilayer ceramic chip capacitor
C34, C35 multilayer ceramic chip capacitor
C36 film dielectric trimmer 2 to 18 pF 2222 809 09003 L1, L3, L22, L24 stripline (note 2) 50 4.8 × 80 mm L2, L23 semi-rigid cable (note 3) 50 ext. conductor
L4, L5 stripline (note 2) 43 6 × 32 mm L6, L7 stripline (note 2) 43 6 × 7 mm L8, L9 stripline (note 2) 43 6 × 7 mm L10, L13 grade 3B Ferroxcube wideband
L11, L12 3/4 turn enamelled 2 mm copper
L14, L15 stripline (notes 2 and 4) 43 6 × 6 mm L16, L17 stripline (notes 2 and 4) 43 6 × 9.5 mm L18, L19 stripline (notes 2 and 4) 43 6 × 27.5 mm L20, L21 stripline (notes 2 and 4) 43 6 × 13 mm
multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104
multilayer ceramic chip capacitor
(note 1)
multilayer ceramic chip capacitor
(note 1)
(note 1)
(note 1)
(note 1)
(note 1)
(note 1)
HF choke
wire
2 × 10 pF in parallel + 22 pF
82 pF, 500 V
1 nF, 500 V
510 pF, 500 V
2 × 8.2 pF in parallel, 500 V
3 × 39 pF in parallel, 500 V
33 pF, 500 V
18 pF, 500 V
10 pF + 18 pF + 62 pF (3 in parallel), 500 V
length 80 mm ext. dia 3.6 mm
2 in parallel 4312 020 36642
40 nH space 1 mm
int. dia. 10 mm leads 2 × 7 mm
October 1992 8
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VHF linear push-pull power MOS transistor BLF348
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
R1, R6 10 turns Bourns potentiometer 50 k R2, R5 0.4 W metal film resistor 1 k R3, R4 0.4 W metal film resistor 82 R7, R8 1 W, ±5% metal film resistor 10
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines L1, L3 - L9, L14 - L22 and L24 are on a double copper-clad printed circuit board with glass microfibre PTFE dielectric (εr = 2.2); thickness1⁄16inch; thickness of copper sheet 2 x 35 µm.
3. Semi-rigid cables L2 and L23 are soldered on to striplines L1 and L24.
4. A copper strap, thickness 0.8 mm, is soldered on to striplines L14 - L21.
October 1992 9
Page 10
VHF linear push-pull power MOS transistor BLF348
220
MGP236
f (MHz)
handbook, halfpage
2
Z
i
()
1
0
1
2
3
160 180 200 240
Class-A operation; VDS = 28 V; IDQ = 2 × 4.6 A;
= 82 (per section); Th = 70 °C.
R
GS
r
i
x
i
Fig.11 Input impedance as a function of frequency
(series components), typical values.
L
L
220
MGP237
f (MHz)
0.8
handbook, halfpage
Z
L
()
0.6
0.4
0.2
0
160 180 200 240
Class-A operation; VDS = 28 V; IDQ = 2 × 4.6 A;
= 82 (per section); Th = 70 °C.
R
GS
R
X
Fig.12 Load impedance as a function of frequency
(series components), typical values.
20
handbook, halfpage
G
p
(dB)
15
10
5
0
160 180 200 240
Class-A operation; VDS = 28 V; IDQ = 2 × 4.6 A;
= 82 (per section); Th = 70 °C.
R
GS
220
f (MHz)
Fig.13 Power gain as a function of frequency,
typical values.
MGP238
October 1992 10
Page 11
VHF linear push-pull power MOS transistor BLF348

PACKAGE OUTLINE

Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A1

D
A
F
U
1
q
H
1
w
2
M
12
H
U
2
5
A
e
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
5.85
5.58
c
0.16
0.10
0.006
0.004
Db
21.98
21.71
0.865
0.855
EE
e U
10.27
11.05
10.05
0.404
0.435
0.396
1
10.29
10.03
0.405
0.395
UNIT
mm
inches
A
5.77
5.00
0.227
0.197
0.230
0.220
43
scale
H
20.58
20.06
0.81
0.79
w
3
H
17.02
16.51
0.67
0.65
M
1
b
0 5 10 mm
F
1.78
1.52
0.070
0.060
B
C
C
p
w
1
p
Q
3.28
2.85
3.02
2.59
0.129
0.112
0.119
0.102
c
E
1
M
AB
Q
qw
U
1
34.17
27.94
33.90
1.345
1.335
w
1
2
9.91
9.65
0.390
0.380
E
w
3
2
0.250.51 1.02
0.010.02 0.041.100
OUTLINE VERSION
SOT262A1 97-06-28
IEC JEDEC EIAJ
REFERENCES
EUROPEAN
PROJECTION
October 1992 11
ISSUE DATE
Page 12
VHF linear push-pull power MOS transistor BLF348

DEFINITIONS

Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1992 12
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