Datasheet BLF346 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLF346

VHF power MOS transistor

Product specification
Supersedes data of September 1992

1996 Oct 02

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Linear amplifier applications in Television transmitters
and transposers.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 6-lead, SOT119 flange
package, with a ceramic cap. All leads are isolated from
the flange. A marking code, showing gate-source voltage
(V

) information is provided for matched pair

GS

applications. Refer to the General Section of Data
Handbook SC19a for further information.

CAUTION

The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.

PINNING-SOT119

PIN SYMBOL DESCRIPTION

1 s source
2 s source
3 g gate
4 d drain
5 s source
6 s source

handbook, halfpage

1

3

2

4

g

65

MAM268

d
s

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

RF performance in a linear amplifier.

MODE OF

OPERATION

f

(MHz)

V

(V)

DS

Class-A 224.25 28 3

I

(A)

D

T

(°C)

h

P

(W)

L

G

P

(dB)

d

(dB)

70 >24 >14 −52
25 typ. 30 typ. 16.5 −52

im

(1)

Note

1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal−16 dB), zero dB corresponds to

peak synchronization level.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1996 Oct 02 2

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DSS

V

GSS

I

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

drain-source voltage − 65 V
gate-source voltage −±20 V
DC drain current − 13 A
total power dissipation up to Tmb=25°C − 130 W
storage temperature −65 150 °C
junction temperature − 200 °C

thermal resistance from junction to

Tmb=25°C; P

= 130 W 1.35 K/W

tot

mounting base
thermal resistance from mounting

Tmb=25°C; P

= 130 W 0.2 K/W

tot

base to heatsink

50

handbook, halfpage

I

D

(A)

10

(1)

1

−1

10

110

(1) Current is this area may be limited by R
(2) Tmb=25°C.

Fig.2 DC SOAR.

(2)

VDS (V)

DSon.

MRA931

200

handbook, halfpage

P

tot

(W)

150

100

50

2

10

0

0 50 100 150

(1) Continuous operation.
(2) Short-time operation during mismatch.

(2)

(1)

MGG104

Th (°C)

Fig.3 Power derating curves.

1996 Oct 02 3

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GSth

∆V

GS

g

fs

R

DSon

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage VGS= 0; ID=50mA 65 −−V
drain-source leakage current VGS= 0; VDS=28V −−2.5 mA
gate-source leakage current VGS= ±20 V; VDS=0 −−1µA
gate-source threshold voltage VDS=10V; ID=50mA 2 − 4.5 V
gate-source voltage difference

VDS=10V; ID=50mA −−100 mV

of matched pairs
forward transconductance VDS=10V; ID=5A 3 4.2 − S
drain-source on-state resistance VGS= 10 V; ID=5A − 0.2 0.3 Ω
on-state drain current VGS= 10 V; VDS=10V − 22 − A
input capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 225 − pF
output capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 180 − pF
feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 25 − pF

handbook, halfpage

2

T.C.

(mV/K)

0

−2

−4

−6

−2

10

VDS=10V.

−1

10

110

MGG105

ID (A)

Fig.4 Temperature coefficient of gate-source voltage

as a function of drain current; typical values.

40

handbook, halfpage

I

D

(A)

30

20

10

0

0 5 10 20

VDS= 10 V; Tj=25°C.

MGG106

15

VGS (V)

Fig.5 Drain current as a function of gate-source

voltage; typical values.

1996 Oct 02 4

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

340

handbook, halfpage

R

DS on

(mΩ)

280

220

160

0

ID= 5 A; VGS=10V.

30 150

60 90 120

MGG107

Tj (°C)

Fig.6 Drain-source on-state resistance as a function

of junction temperature; typical values.

C

MRA930

is

DS

(V)V

800

C

(pF)

600

C

os

400

200

0

010203040

VGS= 0; f = 1 MHz.

Fig.7 Input and output capacitance as functions

of drain-source voltage; typical values.

300

handbook, halfpage

C

rs

(pF)

200

100

0

01020 40

VGS= 0; f = 1 MHz.

30

VDS (V)

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values.

MGG108

1996 Oct 02 5

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

APPLICATION INFORMATION

RF performance in a linear amplifier (common source class-A circuit).
R

= 0.2 K/W; ZL= 1.1 + j0.2 Ω unless otherwise specified.

th mb-h

MODE OF

OPERATION

f

(MHz)

V

(V)

DS

I

(A)

D

T

(°C)

h

P

o sync

(W)

G

(dB)

P

d

(dB)

im

(1)

70 > 24 > 14 −52

Class-A 224.25 28 3

25 typ. 30 typ. 16.5 −52
70 typ. 20 typ. 14.5 −55
25 typ. 22 typ. 15 −55

Note

1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to

peak synchronization level.

Ruggedness in class-A operation

The BLF346 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
following conditions: V

−50

handbook, halfpage

d

im

(dB)

−55

= 28 V; f = 225 MHz at rated output power.

DS

MGG109

(2)

(1)

−60

−65

−70

0 10203040

(1) Th=70°C.
(2) Th=25°C.

P

o sync

(W)

Fig.9 Intermodulation distortion as a function of

peak synchronized output power.

1996 Oct 02 6

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

handbook, full pagewidth

50 Ω
input

C10

C4C2

C1

L1

L2

C3

L3

C5

R2

R3

R1

C6

C7

DUT

R4

BLF346

V

L4

C11 C15

C8

R5

C9

L6

V

DS

B

Fig.10 Test circuit for class-A operation at f = 225 MHz.

L7

L5

C12

C13

C14

C16

MGG113

50 Ω
output

L8

1996 Oct 02 7

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

List of components (see Figs 10 and 11).

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1 film dielectric trimmer 2 to 18 pF 2222 809 09003
C2 multilayer ceramic chip capacitor

(note 1)
C3, C15, C16 film dielectric trimmer 4 to 40 pF 2222 809 08002
C4, C5 multilayer ceramic chip capacitor

(note 1)
C6, C12 multilayer ceramic chip capacitor

(note 1)
C7, C8, C9 multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104
C10, C11 multilayer ceramic chip capacitor

(note 1)
C13 electrolytic capacitor 10 µF, 63 V 2222 030 38109
C14 multilayer ceramic chip capacitor

(note 1)
L1 4 turns enamelled 0.7 mm copper

wire

L2 stripline (note 2) 50 Ω length 49 mm;

L3, L4 stripline (note 2) 31 Ω length 11.5 mm;

L5 2 turns enamelled 1.5 mm copper

wire

L6 grade 3B Ferroxcube RF choke 4312 020 36642
L7 stripline (note 2) 31 Ω length 40 mm;

L8 3 turns enamelled 1.5 mm copper

wire

R1 metal film resistor 1 kΩ, 0.4 W 2322 151 71002
R2 metal film resistor 100 kΩ, 0.4 W 2322 151 71004
R3 10 turns cermet potentiometer 100 Ω
R4 metal film resistor 316 kΩ, 0.4 W 2322 153 53161
R5 metal film resistor 10 Ω, 0.4 W 2322 153 51009

10 pF, 500 V

56 pF, 500 V

680 pF, 500 V

43 pF, 500 V

27 pF, 500 V

42.4 nH length 4 mm;
int. dia. 3 mm;
leads 2 × 5mm

width 2.8 mm

width 6 mm

18.7 nH length 8 mm;
int. dia. 4 mm;
leads 2 × 5mm

width 6 mm

28.8 nH length 8 mm;
int. dia. 4 mm;
leads 2 × 5mm

Notes

1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board with epoxy fibre-glass dielectric (ε

1

⁄16 inch.

1996 Oct 02 8

= 4.5); thickness

r

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

handbook, full pagewidth

70

L1

strap

strap

C2

mounting

screws

(8×)

C1

rivet

rivet

R2

150

strap

C9

rivet

rivet

+V

DS

L7

C13

C14

strap

C16

L8

C12

rivet

rivet

L6

R5

C8

L5

C10

L4

C11

rivet

rivet

R3

C7

C6

R1

C4

L2

C5

L3

C3

The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth
connections are made by means of copper straps and hollow rivets.

C15

MGG114

Fig.11 Component layout for 225 MHz class-A test circuit.

1996 Oct 02 9

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

handbook, halfpage

4

Z

i

(Ω)

2

0

−2

−4

−6

160 180 200 220 240

Class-A operation; VDS= 28 V; ID= 3 A; PL= 30 W; Th=70°C.

r

i

x

i

MGG110

f (MHz)

Fig.12 Input impedance as a function of frequency

(series components); typical values.

handbook, halfpage

2

Z

L

(Ω)

1

0

160 180 200 220 240

Class-A operation; VDS= 28 V; ID= 3 A; PL= 30 W; Th=70°C.

R

L

X

L

MGG111

f (MHz)

Fig.13 Load impedance as a function of frequency

(series components); typical values.

handbook, halfpage

Fig.14 Definition of MOS impedance.

20

handbook, halfpage

G

p

(dB)

16

12

8

Z

i

Z

MBA379

L

4

0

160 180 200 220 240

Class-A operation; VDS= 28 V; ID= 3 A; PL= 30 W; Th=70°C.

MGG112

f (MHz)

Fig.15 Power gain as a function of frequency;

typical values.

1996 Oct 02 10

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

PACKAGE OUTLINE

handbook, full pagewidth

12.96

6.48

22 max

6.35

1

5.5

3

5.0

56

12.2

2.5

3.35

3.04

4

min

5.7

2

5.3

3.8

4

min

5.7

5.3

(2x)

4.50

4.05

7.5

max

25.2
max

18.42

0.14

ceramic

metal

MBC877

BeO

13

max

Dimensions in mm.

Fig.16 SOT119.

1996 Oct 02 11

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Oct 02 12

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

NOTES

1996 Oct 02 13

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

NOTES

1996 Oct 02 14

Philips Semiconductors Product specification

VHF power MOS transistor BLF346

NOTES

1996 Oct 02 15

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Greece: No. 15, 25th March Street, GR 17778 TAVROS,

Tel. [phone], Fax. [phone]

Hungary: seeAustria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.

Worli, MUMBAI 400 018, Tel. [phone], Fax. [phone]

Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax. [phone]
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,

Tel. [phone], Fax. [phone]
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. [phone], Fax. [phone]
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. [phone], Fax. [phone]
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. [phone], Fax. [phone]
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. [phone], Fax. [phone]
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone]

South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone], Fax. [phone]

Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66,
Chung Hsiao West Road, Sec. 1, P.O. Box 22978,
TAIPEI 100, Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1996 SCA51
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 127041/1200/04/pp16 Date of release: 1996 Oct 02 Document order number: 9397 750 01114