Datasheet BLF276 Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF276
VHF power MOS transistor
Product specification
December 1997
Page 2
Philips Semiconductors Product specification

FEATURES

High power gain
Easy power control
Good thermal stability

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor delivers an output power of 100 W in class-B operation at a supply voltage of 50 V.
The transistor is encapsulated in a 6-lead, SOT119 pill-package envelope, with a ceramic cap.

PINNING - SOT119D3

PIN DESCRIPTION
1 source 2 source 3 gate 4 drain 5 source 6 source

PIN CONFIGURATION

age
1
3
Top view
MSA308
2
d
4
g
65
MBB072
s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at T
MODE OF OPERATION
= 25 °C in a common source test circuit.
mb
f
(MHz)
V
(V)
DS
P
(W)
L
G
P
(dB)
(%)
CW, class-B 225 50 100 13 50
108 50 100 18 60
December 1997 2
η
D
Page 3
Philips Semiconductors Product specification

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
j

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
R
th j-mb
drain-source voltage 110 V gate-source voltage 20 V DC drain current 9A total power dissipation up to Tmb = 25 °C 150 W storage temperature 65 150 °C junction temperature 200 °C
thermal resistance from junction to
P
= 150 W; Tmb=25°C max. 1.17 K/W
tot
mounting base
10
handbook, halfpage
I
D
(A)
(1)
1
1
10
110
(1) Current is this area may be limited by R (2) Tmb = 25 °C.
Fig.2 DC SOAR.
MRA936
(2)
2
10
V
(V)
DS
.
DS(on)
3
10
240
handbook, halfpage
P
tot
(W)
200
(2)
160
120
80
40
0
020
(1) Continuous operation. (2) Short-time operation during mismatch.
(1)
40 60 80 100
MRA943
120 140
Tmb (°C)
Fig.3 Power/temperature derating curves.
December 1997 3
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Philips Semiconductors Product specification

CHARACTERISTICS

T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage VGS = 0; ID = 30 mA 110 −−V drain-source leakage current VGS = 0; VDS = 50 V −−1mA gate-source leakage current ±VGS = 20 V; VDS = 0 −−1µA gate-source threshold voltage ID = 50 mA; VDS = 10 V 2 4.5 V forward transconductance ID = 3 A; VDS = 10 V 2.7 −−S drain-source on-state resistance ID = 3 A; VGS = 10 V 0.4 0.6 on-state drain current VGS = 10 V; VDS = 10 V 8 12 A input capacitance VGS = 0; VDS = 50 V; f = 1 MHz 240 pF output capacitance VGS = 0; VDS = 50 V; f = 1 MHz 95 pF feedback capacitance VGS = 0; VDS = 50 V; f = 1 MHz 7 pF
handbook, halfpage
0
TC
(mV/K)
1
2
3
4
5
2
VDS= 10 V.
10
1
1
ID (A)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical values.
MRA945
16
handbook, halfpage
I
D
(A)
12
8
4
0
1010
02468
VDS= 10 V.
MRA940
10
12 14
VGS (V)
Fig.5 Drain current as a function of gate-source
voltage, typical values.
December 1997 4
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Philips Semiconductors Product specification
handbook, halfpage
1
RDS (on)
()
0.8
0.6
0.4
0.2
0
02040
ID= 3 A; VGS= 10 V.
60 80 100
120 140
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical values.
MRA944
Tj (°C)
600
handbook, halfpage
C
(pF)
500
400
300
200
100
0
01020
VGS= 0; f = 1 MHz.
C
is
C
os
30
MRA934
40 50
VDS (V)
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
50
handbook, halfpage
C
rs
(pF)
40
30
20
10
0
010
VGS= 0; f = 1 MHz.
20 30
MRA935
40 50
VDS (V)
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
December 1997 5
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Philips Semiconductors Product specification

APPLICATION INFORMATION FOR CLASS-B OPERATION

T
= 25 °C unless otherwise specified.
mb
RF performance in CW operation in a common source class-B circuit.
MODE OF OPERATION
f
(MHz)
V
(V)
DS
I
DQ
(mA)
P
(W)
L
G
(dB)
CW, class-B 225 50 50 100 13
typ. 15
108 50 50 100 18
typ. 22

Ruggedness in class-B operation

The BLF276 is capable of withstanding a load mismatch corresponding to VSWR = 8 through all phases under the following conditions:
VDS= 50 V; f = 225 MHz; Tmb=25°C at rated load power.
MRA937
20
handbook, halfpage
gain (dB)
16
12
8
gain
η
100
(%)
80
60
40
140
handbook, halfpage
P
η
L
(W)
120
100
80
60
40
P
η
D
(%)
50
typ. 57
60
typ. 75
MRA942
P
(W)
L
20
0
4
0
0 20406080100
Class-B operation; VDS = 50 V; IDQ = 50 mA; f = 225 MHz.
120 140
Fig.9 Power gain and efficiency as functions of
load power, typical values.
December 1997 6
20
0
024
Class-B operation; VDS = 50 V; IDQ = 50 mA; f = 225 MHz.
6
PIN (W)
8
Fig.10 Load power as a function of input power,
typical values.
Page 7
Philips Semiconductors Product specification
handbook, full pagewidth
50 input
L1
f = 225 MHz.
C1
C2
C3
C15
DD
L12
C10
R4
C12
C13
C14
L14
C16
C11
C4
L4
L3
L2
C5
L6
L5
C6
L7
L9
L8
C7
C8
C9
DUT
L10
R2 R3
L11 L13 L15 L16
L21
+V
L17
C17
L18 L19
C18
C19
L20
50
output
MEA808
Fig.11 Test circuit for class-B operation.
December 1997 7
Page 8
Philips Semiconductors Product specification

List of components (class-B test circuit)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C9, C19 multilayer ceramic chip capacitor
(note 1)
C2 multilayer ceramic chip capacitor
(note 1) C3, C5, C16, C18 film dielectric trimmer 4 to 40 pF 2222 809 08002 C4 multilayer ceramic chip capacitor
(note 1) C6, C7 multilayer ceramic chip capacitor
(note 1) C8, C14 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C10 multilayer ceramic chip capacitor
(note 1) C1 1 foil capacitor 100 nF, 100 V 2222 368 21204 C12 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C13 electrolytic capacitor 10 µF, 63 V 2222 030 38109 C15 multilayer ceramic chip capacitor
(note 2)
C17 multilayer ceramic chip capacitor
(note 1) L1 stripline (note 3) 49 length 8 mm
L2 stripline (note 3) 49 length 12 mm
L3 stripline (note 3) 49 length 7.5 mm
L4 2 turns enamelled 1.5 mm copper
wire
L5 stripline (note 3) 49 length 15.5 mm
L6 stripline (note 3) 49 length 5 mm
L7 2 turns enamelled 1.5 mm copper
wire
L8 stripline (note 3) 31 length 6 mm
L9 stripline (note 3) 31 length 9.5 mm
L10, L11 stripline (note 3) 31 length 10 mm
680 pF, 500 V
15 pF, 500 V
13 pF, 500 V
62 pF, 500 V
100 pF, 500 V
2 × 33 pF in parallel, 500 V
18 pF, 500 V
width 4 mm
width 4 mm
width 4 mm
18 nH length 4.2 mm
int. dia. 4 mm leads 2 × 1mm
width 4 mm
width 4 mm
16 nH length 3.3 mm
int. dia. 3 mm leads 2 × 4 mm
width 6 mm
width 6 mm
width 6 mm
December 1997 8
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Philips Semiconductors Product specification
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
L12 3 turns enamelled 1.5 mm copper
wire
L13 stripline (note 3) 31 length 5 mm
L14 1 turn enamelled 1.5 mm copper
wire L15 stripline (note 3) 36 length 16.5 mm
L16 stripline (note 3) 36 length 8 mm
L17 2 turns enamelled 1.5 mm copper
wire
L18 stripline (note 3) 36 length 17.5 mm
L19, L20 stripline (note 3) 36 length 8.5 mm
L21 grade 3B Ferroxcube wide-band RF
choke R1 1 W metal film resistor 9.09 2222 153 59098 R2 10 turns potentiometer 50 k R3 0.4 W metal film resistor 400 k 2322 151 74024 R4 0.4 W metal film resistor 10 2322 151 11009
50 nH length 4.8 mm
int. dia. 5 mm leads 2 × 4 mm
width 6 mm int. dia. 2.8 mm
leads 2 × 1mm
width 5 mm
width 5 mm
17 nH length 4.7 mm
int. dia. 4 mm leads 2 × 2 mm
width 5 mm
width 5 mm
4312 020 36642
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality.
3. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass PTFE dielectric (εr= 4.5); thickness1⁄16inch.
December 1997 9
Page 10
Philips Semiconductors Product specification
handbook, full pagewidth
handbook, full pagewidth
L1
strap
strap
C1
L2
C2
L3
C3
mounting
screws
(8x)
L4
rivets (18x)
R2 R3
L20
L11
L13
L12
L14
R4
L15
C15
C8
L6
C4
L5
C5
C9
C6
R1
C7
L8
L10
C10
191 mm
C13
C12
C14
C11
C15
L17L7
L16
C16 C18
C17
L18L9L19
C19
MEA810
strap
strap
L20
70 mm
The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets between the upper and lower sheets.
Fig.12 Component layout for 225 MHz class-B test circuit.
December 1997 10
MEA809
Page 11
Philips Semiconductors Product specification
handbook, halfpage
8
Z
i
()
6
4
r
2
0
2
4
6
0 50 100 150
Class-B operation; VDS = 50 V; IDQ = 50 mA;
= 9.1 ;PL= 100 W.
R
GS
i
x
i
MRA939
200 250
f (MHz)
Fig.13 Input impedance as a function of frequency
(series components), typical values.
16
handbook, halfpage
Z
L
()
12
8
4
0
0 50 100
Class-B operation; VDS = 50 V; IDQ = 50 mA;
= 9.1 ;PL= 100 W.
R
GS
R
L
X
L
150 200 250
MRA941
f (MHz)
Fig.14 Load impedance as a function of frequency
(series components), typical values.
handbook, halfpage
Fig.15 Definition of MOS impedance.
30
handbook, halfpage
gain (dB)
20
10
Z
i
Z
MBA379
L
0
0 50 100 150 200 250
Class-B operation; VDS = 50 V; IDQ = 50 mA;
= 9.1 ;PL= 100 W.
R
GS
MRA938
f (MHz)
Fig.16 Power gain as a function of frequency,
typical values.
December 1997 11
Page 12
Philips Semiconductors Product specification

PACKAGE OUTLINE

Flangeless ceramic package; 6 leads SOT119D

D
A
A
2
H
1
D
1
H
1
b
2
4
3
b
1
e
0 5 10 mm
6
5
b
scale
w
M
A
2
c
w
M
3
Q
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT Q
mm
0.178
inches
0.146
OUTLINE VERSION
SOT119D 97-06-28
A
4.53
3.70
b
5.59
5.33
0.220
0.210
b
b
c
0.16
0.10
0.006
0.004
D
12.86
12.59
0.506
0.496
12.83
12.57
0.505
0.495
1
2
5.34
4.07
5.08
3.81
0.210
0.160
0.200
0.150
IEC JEDEC EIAJ
e
D
1
6.48
0.255
REFERENCES
H
21.97
21.20
0.865
0.835
H
1
18.55
18.28
0.730
0.720
1.71
1.44
0.067
0.057
w
w
2
0.51
0.26
0.02 0.01
3
EUROPEAN
PROJECTION
December 1997 12
ISSUE DATE
Page 13
Philips Semiconductors Product specification

DEFINITIONS

Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
December 1997 13
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