Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range. The transistor delivers an
output power of 100 W in class-B
operation at a supply voltage of 50 V.
The transistor is encapsulated in a
6-lead, SOT119 pill-package
envelope, with a ceramic cap.
PINNING - SOT119D3
PINDESCRIPTION
1source
2source
3gate
4drain
5source
6source
PIN CONFIGURATION
age
1
3
Top view
MSA308
2
d
4
g
65
MBB072
s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a common source test circuit.
mb
f
(MHz)
V
(V)
DS
P
(W)
L
G
P
(dB)
(%)
CW, class-B22550100≥ 13≥ 50
10850100≥ 18≥ 60
December 19972
η
D
Page 3
Philips SemiconductorsProduct specification
VHF power MOS transistorBLF276
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOLPARAMETERCONDITIONSTHERMAL RESISTANCE
R
th j-mb
drain-source voltage−110V
gate-source voltage−20V
DC drain current−9A
total power dissipationup to Tmb = 25 °C−150W
storage temperature−65150°C
junction temperature−200°C
thermal resistance from junction to
P
= 150 W; Tmb=25°Cmax. 1.17 K/W
tot
mounting base
10
handbook, halfpage
I
D
(A)
(1)
1
−1
10
110
(1) Current is this area may be limited by R
(2) Tmb = 25 °C.
Fig.2 DC SOAR.
MRA936
(2)
2
10
V
(V)
DS
.
DS(on)
3
10
240
handbook, halfpage
P
tot
(W)
200
(2)
160
120
80
40
0
020
(1) Continuous operation.
(2) Short-time operation during mismatch.
choke
R11 W metal film resistor9.09 Ω2222 153 59098
R210 turns potentiometer50 kΩ
R30.4 W metal film resistor400 kΩ2322 151 74024
R40.4 W metal film resistor10 Ω2322 151 11009
50 nHlength 4.8 mm
int. dia. 5 mm
leads 2 × 4 mm
width 6 mm
int. dia. 2.8 mm
leads 2 × 1mm
width 5 mm
width 5 mm
17 nHlength 4.7 mm
int. dia. 4 mm
leads 2 × 2 mm
width 5 mm
width 5 mm
4312 020 36642
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality.
3. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass PTFE dielectric (εr= 4.5);
thickness1⁄16inch.
December 19979
Page 10
Philips SemiconductorsProduct specification
VHF power MOS transistorBLF276
handbook, full pagewidth
handbook, full pagewidth
L1
strap
strap
C1
L2
C2
L3
C3
mounting
screws
(8x)
L4
rivets
(18x)
R2R3
L20
L11
L13
L12
L14
R4
L15
C15
C8
L6
C4
L5
C5
C9
C6
R1
C7
L8
L10
C10
191 mm
C13
C12
C14
C11
C15
L17L7
L16
C16C18
C17
L18L9L19
C19
MEA810
strap
strap
L20
70 mm
The circuit and components are situated on one side of the printed circuit board, the other side being fully
metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets
between the upper and lower sheets.
Fig.12 Component layout for 225 MHz class-B test circuit.
December 199710
MEA809
Page 11
Philips SemiconductorsProduct specification
VHF power MOS transistorBLF276
handbook, halfpage
8
Z
i
(Ω)
6
4
r
2
0
−2
−4
−6
050100150
Class-B operation; VDS = 50 V; IDQ = 50 mA;
= 9.1 Ω;PL= 100 W.
R
GS
i
x
i
MRA939
200250
f (MHz)
Fig.13 Input impedance as a function of frequency
(series components), typical values.
16
handbook, halfpage
Z
L
(Ω)
12
8
4
0
050100
Class-B operation; VDS = 50 V; IDQ = 50 mA;
= 9.1 Ω;PL= 100 W.
R
GS
R
L
X
L
150200250
MRA941
f (MHz)
Fig.14 Load impedance as a function of frequency
(series components), typical values.
handbook, halfpage
Fig.15 Definition of MOS impedance.
30
handbook, halfpage
gain
(dB)
20
10
Z
i
Z
MBA379
L
0
050100150200250
Class-B operation; VDS = 50 V; IDQ = 50 mA;
= 9.1 Ω;PL= 100 W.
R
GS
MRA938
f (MHz)
Fig.16 Power gain as a function of frequency,
typical values.
December 199711
Page 12
Philips SemiconductorsProduct specification
VHF power MOS transistorBLF276
PACKAGE OUTLINE
Flangeless ceramic package; 6 leadsSOT119D
D
A
A
2
H
1
D
1
H
1
b
2
4
3
b
1
e
0510 mm
6
5
b
scale
w
M
A
2
c
w
M
3
Q
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNITQ
mm
0.178
inches
0.146
OUTLINE
VERSION
SOT119D97-06-28
A
4.53
3.70
b
5.59
5.33
0.220
0.210
b
b
c
0.16
0.10
0.006
0.004
D
12.86
12.59
0.506
0.496
12.83
12.57
0.505
0.495
1
2
5.34
4.07
5.08
3.81
0.210
0.160
0.200
0.150
IEC JEDEC EIAJ
e
D
1
6.48
0.255
REFERENCES
H
21.97
21.20
0.865
0.835
H
1
18.55
18.28
0.730
0.720
1.71
1.44
0.067
0.057
w
w
2
0.51
0.26
0.02 0.01
3
EUROPEAN
PROJECTION
December 199712
ISSUE DATE
Page 13
Philips SemiconductorsProduct specification
VHF power MOS transistorBLF276
DEFINITIONS
Data Sheet Status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
December 199713
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