Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF247B
VHF push-pull power MOS
transistor
Product specification
Philips Semiconductors
August 1994
Page 2
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF247B
FEATURES
• High power gain
• Easy power control
• Good thermal stability
• Withstands full load mismatch.
APPLICATIONS
• Large signal applications in the
VHF frequency range.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS push-pull
transistor encapsulated in a 4-lead,
SOT262A1 balanced flange type
package with two ceramic caps. The
mounting flange provides the
common source connection for the
transistor.
PINNING - SOT262A1
PIN CONFIGURATION
12
d
g
g
55
Top view
34
MAM098
s
d
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in a antistatic package. The gate-source input must
be protected against static charge during transport or handling.
WARNING
PIN DESCRIPTION
1 drain 1
2 drain 2
3 gate 1
4 gate 2
5 source
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a common source test circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
L
G
(dB)
p
(%)
CW, class-B 225 28 150 ≥12 ≥55
η
D
August 1994 2
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Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF247B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor section
V
DS
V
GS
I
D
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
drain-source voltage (DC) − 65 V
gate-source voltage −±20 V
drain current (DC) − 13 A
total power dissipation up to Tmb= 25 °C; total device;
− 280 W
both sections equally loaded
storage temperature −65 +150 °C
operating junction temperature − +200 °C
thermal resistance from junction to
mounting base
thermal resistance from mounting base
to heatsink
total device; both sections equally
loaded
total device; both sections equally
loaded
0.63 K/W
0.15 K/W
2
10
I
D
(A)
(1) (2)
10
1
Total device; both sections equally loaded.
(1) Current in this area may be limited by R
(2) Tmb=25°C.
101
Fig.2 DC SOAR.
V (V)
DS
.
DSon
MBD287
400
P
tot
(W)
300
(2)
200
(1)
100
2
10
0
040
Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short-time operation during mismatch.
80 120 160
MBD288
o
T ( C)
h
Fig.3 Power derating curves.
August 1994 3
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Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF247B
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor section
V
(BR)DSS
I
DSS
I
GSS
V
GSth
g
fs
R
DSon
I
DSX
C
is
C
os
C
rs
drain-source breakdown
voltage
drain-source leakage current VGS= 0; VDS=28V −−2.5 mA
gate-source leakage current VGS= ±20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 50 mA; VDS=10V 2 − 4.5 V
forward transconductance ID= 5 A; VGS=10V 3 4.2 − S
drain-source on-state
resistance
drain cut-off current VGS= 10 V; VDS=10V − 22 − A
input capacitance VGS= 0; VDS=28V; f=1MHz − 225 − pF
output capacitance VGS= 0; VDS=28V; f=1MHz − 180 − pF
reverse transfer capacitance VGS= 0; VDS=28V; f=1MHz − 25 − pF
ID= 50 mA; VGS=0 65 −−V
ID= 5 A; VGS=10V − 0.2 0.3 Ω
handbook, halfpage
1
TC
(mV/K)
0
1
2
3
4
5
10
VDS=10V.
2
1
10
110
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current,
typical values per section.
I (A)
D
MBD298
15
MBD299
V (V)
GS
40
I
D
(A)
30
20
10
0
0 5 10 20
VDS=10V.
Fig.5 Drain current as a function of gate-source
voltage, typical values per section.
August 1994 4
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Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF247B
400
handbook, halfpage
R
DSon
(Ω)
300
200
100
0
050
ID= 5A; VGS=10V.
100
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values per section.
MBD297
o
T ( C)
j
150
C
MRA930
is
DS
(V)V
800
C
(pF)
600
C
os
400
200
0
010203040
VGS= 0; f = 1 MHz.
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values
per section.
300
C
rs
(pF)
200
100
0
0
VGS= 0; f = 1 MHz.
10 20 30 40
MBD296
V (V)
DS
Fig.8 Reverse transfer capacitance as a
function of drain-source voltage, typical
values per section.
August 1994 5
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Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF247B
APPLICATION INFORMATION
RF performance in a push-pull, common source, class-B test circuit: T
= 25 °C; R
h
th mb-h
= 0.15 K/W.
MODE OF OPERATION
f
(MHz)
CW, class-B 225 28 2 × 100 150 ≥12
V
(V)
DS
I
DQ
(mA)
P
(W)
L
G
p
(dB)
η
(%)
D
≥55
typ. 13.5
typ. 70
Ruggedness in class-B operation
The BLF247B is capable of withstanding a full load mismatch corresponding to VSWR = 50 through all phases under the
following conditions: V
20
handbook, halfpage
G
p
(dB)
16
12
8
4
= 28 V; f = 175 MHz; Th=25°C; PL= 150 W; R
DS
MBD289
100
η
(%)
η
G
p
80
60
40
20
handbook, halfpage
P
(W)
300
L
200
100
th mb-h
= 0.15 K/W.
MBD290
0
0 50 100 150 200 250
Class-B operation.
VDS=28V.
IDQ=2×100 mA.
ZL= 1.3 + j0.6 Ω per section.
f = 225 MHz.
P (W)
L
Fig.9 Power gain and efficiency as functions of
load power; typical values.
0
0
0
Class-B operation.
VDS=28V.
IDQ=2×100 mA.
ZL= 1.3 + j0.6 Ω per section.
f = 225 MHz.
10 20 30
P (W)
i
Fig.10 Load power as a function of input power;
typical values.
August 1994 6
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Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF247B
50 Ω
output
L25
L24
L26
MBD294
DD1
V
C21
C12
C22
R1
C8
L14
R8
A
R2
C9
C23
L15
R3
C19
L22
L20
L18
L12
DUT
L10
L8
L6
L4
C18C16
C6
C4
C14
C7
C17
C15
C5
C20
L23
L19L9
L13 L21
L11
L7
L5
R4
L16
C10
C24
L17
C25
C26
DD2
V
C13
R9
C11
R6
R5
C28
A
C27
C29
IC1
C30
handbook, full pagewidth
Fig.11 Test circuit for Class-B operation at 225 MHz.
L1C1L2
50 Ω
input
August 1994 7
C3
C2
L3
DD1
V
R7
Page 8
Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF247B
List of components (see Figs 11 and 12)
COMPONENT DESCRIPTION VALUE DIMENSION CATALOGUE NO.
C1, C2 multilayer ceramic chip
capacitor; note 1
C3 multilayer ceramic chip
capacitor; note 1
C4, C6, C18 film dielectric trimmer 2 to 9 pF 2222 809 09005
C5 multilayer ceramic chip
capacitor; note 1
C7 multilayer ceramic chip
capacitor; note 1
C8, C11, C12,
C13, C27
C9, C10 multilayer ceramic chip
C14 multilayer ceramic chip
C15 multilayer ceramic chip
C16 film dielectric trimmer 2 to 18 pF 2222 809 09006
C17 multilayer ceramic chip
C19, C20 multilayer ceramic chip
C21, C26,
C29, C30
C22, C25, C28 electrolytic capacitor 10 µF; 63 V 2222 030 38109
C23, C24 multilayer ceramic chip
L1, L3, L24,
L26
L2, L25 semi-rigid cable; note 3 50 Ω ext. conductor:
L4, L5 stripline; note 2 43 Ω length 30 mm
L6, L7 stripline; note 2 43 Ω length 10 mm
L8, L9 stripline; note 2 43 Ω length 2 mm
L10, L11 stripline; note 2 43 Ω length 4 mm
L12, L13 stripline; note 2 43 Ω length 10 mm
L14, L17 Ferroxcube grade 3B wideband
multilayer ceramic chip
capacitor
capacitor; note 1
capacitor; note 1
capacitor; note 1
capacitor; note 1
capacitor; note 1
multilayer ceramic chip
capacitor; note 1
capacitor; note 1
stripline; note 2 50 Ω length 80 mm
HF choke
200 pF
27 pF
39 pF
91 pF
100 nF; 50 V 2222 852 47104
2 × 1 nF in parallel
2 × 36 pF in parallel
18 pF
6.8 pF
47 pF
1nF
2 × 470 nF in
parallel
width 4.8 mm
length 80 mm
diameter 3.6 mm
width 6 mm
width 6 mm
width 6 mm
width 6 mm
width 6 mm
2 in parallel 4312 02036642
August 1994 8
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Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF247B
COMPONENT DESCRIPTION VALUE DIMENSION CATALOGUE NO.
L15, L16 3 turns enamelled 1.6 mm
copper wire
L18, L19 stripline; note 2 43 Ω length 6 mm
L20, L21 stripline; note 2 43 Ω length 15 mm
L22, L23 stripline; note 2 43 Ω length 26.5 mm
R1, R6 10 turns potentiometer 50 kΩ
R2, R3, R4, R5 metal film resistor 1 kΩ; 0.4 W
R7 metal film resistor 5.11 kΩ; 1 W
R8, R9 metal film resistor 10 Ω; 1 W
IC1 voltage regulator 78L05
50 nH length 7.8 mm
internal diameter 6 mm
leads 2 × 10 mm
width 6 mm
width 6 mm
width 6 mm
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board with glass microfibre PTFE dielectric (εr= 2.2);
thickness1⁄16inch; thickness of the copper sheet 2 × 35 µm.
3. Semi-rigid cables L2 and L25 are soldered onto striplines L1 and L26.
C18
130
C22C12
L24
C19
C20
L26
C25C13
L25
MBD295
handbook, full pagewidth
119
V
DD1
L1
L2
L3
R7
IC1
to R1, R6
C11
C8
slider R6
C27
C29
slider R1
R2
C5
C6
R5
C9
R3
L6
C7
L7
R4
C10
C30
C28
C1
L4
C3
L5
C4
C2
BLF247B
L8
L10
L11
L9
C23
L12
L18
C14 C15
L19
L13
C24
C21
L14
R8
L14
L15
L20 L22
L21 L23
L16
L17
R9
L17
C26
V
DD1
V
C17
DD2
100
Dimensions in mm.
The circuit and components are situated on one side of the printed-circuit board, the other side being fully metallized to serve as a ground plane. Earth
connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
Fig.12 Component layout for 225 MHz class-B test circuit.
August 1994 9
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Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF247B
4
Z
i
(Ω)
0
4
8
12
0 100 200 300
VDS=28V.
IDQ=2×100 mA.
Th=25°C.
PL= 150 W (total device).
r
i
x
i
MBD291
f (MHz)
Fig.13 Input impedance as a function of frequency
(series components), typical values per
section.
6
Z
L
(Ω)
4
2
0
0 100 200 300
VDS=28V.
IDQ=2×100 mA.
Th=25°C.
PL= 150 W (total device).
R
L
X
L
MBD293
f (MHz)
Fig.14 Load impedance as a function of frequency
(series components), typical values per
section.
handbook, halfpage
Fig.15 Definition of MOS impedances.
40
handbook, halfpage
G
p
(dB)
30
20
10
Z
i
Z
MBA379
L
0
0 100 200 300
VDS=28V.
IDQ=2×100 mA.
Th=25°C.
PL= 150 W (total device).
MBD292
f (MHz)
Fig.16 Power gain as a function of frequency,
typical values per section.
August 1994 10
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Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF247B
PACKAGE OUTLINE
0.25
Dimensions in mm.
2.92
2.29
1.02
0.13
2.54
10.4
max
21.85
11.05
27.94
34.3 max
11 max
5.9
5.5
(4x)
43
11 max
12
5.525
seating plane
0.25 M
5
1.65
3.3
3.0
MSA285 - 2
5.8
max
9.8
15.6
max
Fig.17 SOT262A1.
August 1994 11
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Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF247B
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1994 12
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Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF247B
NOTES
August 1994 13
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Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF247B
NOTES
August 1994 14
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Philips Semiconductors Product specification
VHF push-pull power MOS transistor BLF247B
NOTES
August 1994 15
Page 16
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Printed in The Netherlands
846915/1500/01/pp16 Date of release: August 1994
Document order number: 9397 738 40011
Philips Semiconductors
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