Datasheet BLF246 Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF246
VHF power MOS transistor
Product specification Supersedes data of September 1992
1996 Oct 21
Page 2
VHF power MOS transistor BLF246
FEATURES
High power gain
Low noise figure
Easy power control
Good thermal stability
Withstands full load mismatch.
APPLICATIONS
Large signal amplifier applications in the VHF frequency range.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage
) information is provided for matched pair
(V
GS
applications. Refer to the General section of Data Handbook SC19a for further information.
CAUTION
The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
PINNING - SOT121
PIN SYMBOL DESCRIPTION
1 d drain 2 s source 3 g gate 4 s source
handbook, halfpage
14
g
32
MAM267
Fig.1 Simplified outline and symbol.
d s
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
=25°C in a common source test circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
D
CW, class-B 108 28 80 16 55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1996 Oct 21 2
Page 3
VHF power MOS transistor BLF246
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GS
I
D
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-mb
R
th mb-h
drain-source voltage 65 V gate-source voltage −±20 V DC drain current 13 A total power dissipation up to T
=25°C 130 W
amb
storage temperature 65 150 °C junction temperature 200 °C
thermal resistance from junction to mounting base 1.35 K/W thermal resistance from mounting base to heatsink 0.2 K/W
50
handbook, halfpage
I
D
(A)
10
(1)
1
1
10
110
(1) Current is this area may be limited by R (2) Tmb=25°C.
Fig.2 DC SOAR.
(2)
VDS (V)
DS(on)
.
MRA931
200
handbook, halfpage
P
tot
(W)
150
100
50
2
10
0
0 50 100 150
(1) Continuous operation. (2) Short-time operation during mismatch.
(2)
(1)
MGG104
Th (°C)
Fig.3 Power derating curves.
1996 Oct 21 3
Page 4
VHF power MOS transistor BLF246
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GSth
V
GS
g
fs
R
DSon
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage VGS= 0; ID=50mA 65 −−V drain-source leakage current VGS= 0; VDS=28V −−2.5 mA gate-source leakage current VGS= ±20 V; VDS=0 −−1µA gate-source threshold voltage ID= 50 mA; VDS=10V 2 4.5 V gate-source voltage difference of
ID= 50 mA; VDS=10V −−100 mV
matched pairs forward transconductance ID= 2.5 A or 5 A; VDS= 10 V 3 4.2 S drain-source on-state resistance ID= 5 A; VGS=10V 0.2 0.3 on-state drain current VGS= 10 V; VDS=10V 22 A input capacitance VGS= 0; VDS= 28 V; f = 1 MHz 225 pF output capacitance VGS= 0; VDS= 28 V; f = 1 MHz 180 pF feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz 25 pF
handbook, halfpage
2
T.C.
(mV/K)
0
2
4
6
2
10
VDS= 10V; valid for Th= 25 to 70 °C.
1
10
110
ID (A)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical values.
MGG105
40
handbook, halfpage
I
D
(A)
30
20
10
0
0 5 10 20
VDS= 10 V; Tj=25°C.
MGG106
15
VGS (V)
Fig.5 Drain current as a function of gate-source
voltage, typical values.
1996 Oct 21 4
Page 5
VHF power MOS transistor BLF246
400
handbook, halfpage
R
DSon
()
300
200
100
0
050
VGS= 10 V; ID=5A.
100
T ( C)
j
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical values.
MBD297
o
150
C
MRA930
is
DS
(V)V
800
C
(pF)
600
C
os
400
200
0
010203040
VGS= 0; f = 1 MHz.
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
300
handbook, halfpage
C
rs
(pF)
200
100
0
01020 40
VGS= 0; f = 1 MHz.
30
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
MGG108
VDS (V)
1996 Oct 21 5
Page 6
VHF power MOS transistor BLF246
APPLICATION INFORMATION
RF performance in CW operation in a common source test circuit. T
=25°C; R
h
= 0.2 K/W; RGS=12Ω unless otherwise specified.
th mb-h
MODE OF OPERATION
f
(MHz)
V
(V)
DS
I
D
(A)
P
(W)
L
G
p
(dB)
η
(%)
D
CW, class-B 108 28 0.1 80 >16 >55 CW, class-B 108 28 0.1 80 typ. 18 typ. 65 CW, class-C 108 28 0
(1)
80 typ. 15 typ. 72
Note
1. V
= 0 (class-C).
GS
Ruggedness in class-B operation
The BLF246 is capable of withstanding a load mismatch corresponding to VSWR = 50: 1 through all phases under the following conditions: V
= 28 V; f = 108 MHz; Th=25°C; R
DS
= 0.2 K/W at rated output power.
th mb-h
Noise figure
Measured with 80 W power-matched source and load in the test circuit (see Fig.9) with V f = 108 MHz; RGS=27Ω; Th=25°C; R
20
handbook, halfpage
G
p
(dB)
G
p
η
D
= 0.2 K/W; F = typ. 3 dB.
th mb-h
MGG096
100
η
D
(%)
150
handbook, halfpage
P
L
(W)
100
= 28 V; ID=2A;
DS
MGG095
10
0
0 150100
Class-B operation; VDS= 28 V; IDQ= 0.1 A; RGS=12Ω; f = 108 MHz; T
h
=25°C; R
50
th mb-h
PL (W)
= 0.2 K/W.
50
0
Fig.9 Power gain and efficiency as functions of
load power, typical values.
1996 Oct 21 6
50
50
053412
Class-B operation; VDS= 28 V; IDQ= 0.1 A; RGS=12Ω; f = 108 MHz; T
=25°C; R
h
th mb-h
= 0.2 K/W.
PIN (W)
Fig.10 Load power as a function of input power,
typical values.
Page 7
VHF power MOS transistor BLF246
handbook, full pagewidth
input
50
C1
C10
C2
C11
L1
L2
C3
L3
R1
C4
R2
V
G
DUT
L4
C5
Fig.11 Test circuit for class-B operation at 108 MHz.
L6 L8
L5
R3
L7
C12
C6
C8
C13 C14
C7
C9
V
output 50
DS
MGG097
1996 Oct 21 7
Page 8
VHF power MOS transistor BLF246
List of components (see Figs 11 and 12).
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C4, C5, C8, C14
C2, C3, C6, C7 film dielectric trimmer 5 to 60 pF 2222 809 08003 C9 electrolytic capacitor 2.2 µF, 63V 2222 030 38228 C10 multilayer ceramic chip capacitor;
C11 multilayer ceramic chip capacitor;
C12 multilayer ceramic chip capacitor;
C13 multilayer ceramic chip capacitor;
L1 5 turns enamelled 0.6 mm copper
L2 2 turns enamelled 0.6 mm copper
L3, L4 stripline; note 2 31 length 13mm
L5 3 turns enamelled 1.6 mm copper
L6 hairpin of enamelled 1.6 mm
L7 grade 3B Ferroxcube HF choke 4312 020 36640 L8 3 turns enamelled 1.6 mm copper
R1 metal film resistor 2 × 24 in
R2 metal film resistor 100 kΩ, 0.4 W R3 metal film resistor 10 Ω, 0.4 W
multilayer ceramic chip capacitor 100 nF 2222 852 47104
68pF+39pF
note 1
note 1
note 1
note 1
wire
wire
wire
copper wire
wire
in parallel 69 pF + 100 pF
in parallel 2x 100 pF
in parallel 62 pF
52 nH length 6.5 mm
int. dia. 3 mm leads 2 × 10 mm
19 nH length 3.5 mm
int. dia. 3 mm leads 2 × 7.5 mm
width 6 mm
36 nH length 12 mm
int. dia. 6 mm leads 2 × 5mm
14 nH length 20 mm
52 nH length 8 mm
int. dia. 6 mm leads 2 × 9mm
parallel, 0.4 W
Notes
1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality.
2. The striplines are mounted on a double copper-clad PCB with epoxy fibre-glass dielectric (ε
thickness 1.6 mm.
1996 Oct 21 8
= 4.5),
r
Page 9
VHF power MOS transistor BLF246
handbook, full pagewidth
70
STRAP
C1
C10
150
RIVET
STRAP
L7
+V
C9
DS
L8
C13
C14
C8
R2
+ V
G
C4
L1
C11
L2
R1
L3
C5
R3
L5
C12
L6
L4
C2
Dimensions in mm.
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as a ground. Earth connections are made by means of hollow rivets, whilst under the source leads, copper straps are used for a direct contact between the upper and lower sheets.
C3
C6
C7
MGG098
Fig.12 Component layout for 108 MHz class-B test circuit.
1996 Oct 21 9
Page 10
VHF power MOS transistor BLF246
150
MGG093
f (MHz)
handbook, halfpage
5
Z
i
()
0
5
10
15
0 50 100 200
Class-B operation; VDS= 28 V; IDQ= 0.1 A; RGS=12Ω;
=80W;Th=25°C; R
P
L
th mb-h
r
i
x
i
= 0.2 K/W.
Fig.13 Input impedance as a function of frequency
(series components), typical values.
handbook, halfpage
6
Z
L
()
4
R
L
2
0
0 50 100 200150
Class-B operation; VDS= 28 V; IDQ= 0.1 A; RGS=12Ω;
=80W;Th=25°C; R
P
L
th mb-h
X
L
= 0.2 K/W.
MGG094
f (MHz)
Fig.14 Load impedance as a function of frequency
(series components), typical values.
40
handbook, halfpage
G
p
(dB)
30
20
10
0
0 50 100 200
Class-B operation; VDS= 28 V; IDQ= 0.1 A; RGS=12Ω;
=80W;Th=25°C; R
P
L
th mb-h
= 0.2 K/W.
150
f (MHz)
Fig.15 Power gain as a function of frequency,
typical values.
MGG092
1996 Oct 21 10
Page 11
VHF power MOS transistor BLF246
PACKAGE OUTLINE
handbook, full pagewidth
229
6.35
12.2 max
3.35
3.04
29 26
14
26
2.54
5.9
5.5
25.2
7.5
max
max
MBC873
6.5 min
3
(2x)
4.50
4.05
18.42
0.14
ceramic
BeO
metal
13
max
Dimensions in mm.
Fig.16 SOT121.
1996 Oct 21 11
Page 12
VHF power MOS transistor BLF246
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Oct 21 12
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