Product specification
Supersedes data of September 1992
1996 Oct 21
Page 2
Philips SemiconductorsProduct specification
VHF power MOS transistorBLF246
FEATURES
• High power gain
• Low noise figure
• Easy power control
• Good thermal stability
• Withstands full load mismatch.
APPLICATIONS
• Large signal amplifier applications in the VHF frequency
range.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 4-lead, SOT121 flange
package, with a ceramic cap. All leads are isolated from
the flange. A marking code, showing gate-source voltage
) information is provided for matched pair
(V
GS
applications. Refer to the General section of Data
Handbook SC19a for further information.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT121
PINSYMBOLDESCRIPTION
1ddrain
2ssource
3ggate
4ssource
handbook, halfpage
14
g
32
MAM267
Fig.1 Simplified outline and symbol.
d
s
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
=25°C in a common source test circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
D
CW, class-B1082880≥16≥55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Oct 212
Page 3
Philips SemiconductorsProduct specification
VHF power MOS transistorBLF246
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
V
DS
V
GS
I
D
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOLPARAMETERVALUEUNIT
R
th j-mb
R
th mb-h
drain-source voltage−65V
gate-source voltage−±20V
DC drain current−13A
total power dissipationup to T
1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality.
2. The striplines are mounted on a double copper-clad PCB with epoxy fibre-glass dielectric (ε
thickness 1.6 mm.
1996 Oct 218
= 4.5),
r
Page 9
Philips SemiconductorsProduct specification
VHF power MOS transistorBLF246
handbook, full pagewidth
70
STRAP
C1
C10
150
RIVET
STRAP
L7
+V
C9
DS
L8
C13
C14
C8
R2
+ V
G
C4
L1
C11
L2
R1
L3
C5
R3
L5
C12
L6
L4
C2
Dimensions in mm.
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as a ground.
Earth connections are made by means of hollow rivets, whilst under the source leads, copper straps are used for a direct contact between the upper
and lower sheets.
C3
C6
C7
MGG098
Fig.12 Component layout for 108 MHz class-B test circuit.
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Oct 2112
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