Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF245
VHF power MOS transistor
Product specification
September 1992
Page 2
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
FEATURES
• High power gain
• Low noise figure
• Easy power control
• Good thermal stability
• Withstands full load mismatch.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.
The transistor is encapsulated in a
4-lead SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
Matched gate-source voltage (V
GS
)
groups are available on request.
PINNING - SOT123
PIN CONFIGURATION
fpage
1
23
4
MSB057
g
MBB072
d
s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
PIN DESCRIPTION
1 drain
2 source
3 gate
4 source
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a class-B test circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
L
G
(dB)
p
(%)
CW, class-B 175 28 30 > 13 > 50
η
D
September 1992 2
Page 3
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
R
th j-mb
R
th mb-h
drain-source voltage VGS=0 − 65 V
gate-source voltage VDS=0 − 20 V
DC drain current − 6A
total power dissipation up to Tmb = 25 °C − 68 W
storage temperature −65 150 °C
junction temperature − 200 °C
thermal resistance from
Tmb=25°C; P
= 68 W 2.6 K/W
tot
junction to mounting base
thermal resistance from
Tmb=25°C; P
= 68 W 0.3 K/W
tot
mounting base to heatsink
10
handbook, halfpage
I
D
(A)
10
(1) Current is this area may be limited by R
(2) Tmb=25°C.
(1)
1
−1
110
Fig.2 DC SOAR.
(2)
VDS (V)
DS(on)
.
MRA921
120
MGP167
Th (°C)
100
handbook, halfpage
P
tot
(W)
80
60
40
20
2
10
0
0 40 80 160
(1) Continuous operation.
(2) Short-time operation during mismatch.
(2)
(1)
Fig.3 Power/temperature derating curves.
September 1992 3
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Philips Semiconductors Product specification
VHF power MOS transistor BLF245
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
∆V
GS
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
F noise figure (see Fig.14) input and output power matched for:
drain-source breakdown voltage VGS = 0; ID=10mA 65 −− V
drain-source leakage current VGS = 0; VDS = 28 V −−2mA
gate-source leakage current ±VGS = 20 V; VDS = 0 −−1 µA
gate-source threshold voltage ID = 10 mA; VDS = 10 V 2 − 4.5 V
gate-source voltage difference of
ID = 10 mA; VDS = 10 V −−100 mV
matched devices
forward transconductance ID = 1.5 A; VDS = 10 V 1.2 1.9 − S
drain-source on-state resistance ID = 1.5 A; VGS = 10 V − 0.4 0.75 Ω
on-state drain current VGS = 10 V; VDS = 10 V − 10 − A
input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 125 − pF
output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 75 − pF
feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 7 − pF
− 2 − dB
I
= 1 A; VDS=28V; PL=30W;
D
R1 = 1 kΩ; Th=25°C; f = 175 MHz
handbook, halfpage
6
T.C.
(mV/K)
4
2
0
−2
−4
−6
10 10
VDS= 10V; valid for Tj= 25 to 125°C.
2
3
10
ID (mA)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
MGP168
12
handbook, halfpage
I
D
(A)
8
4
4
10
0
020
VDS=10V.
Tj = 25 °C
125 °C
10
VGS (V)
MGP169
Fig.5 Drain current as a function of gate-source
voltage, typical values.
September 1992 4
Page 5
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
120
MGP170
Tj (°C)
0.8
handbook, halfpage
R
DS(on)
(Ω)
0.6
0.4
0.2
0
0
VGS=10V;
= 1.5A.
I
D
40 80 160
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values.
30
MGP171
VDS (V)
240
handbook, halfpage
C
(pF)
200
160
120
80
40
01020 40
VGS= 0; f= 1 MHz.
C
is
C
os
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
20
handbook, halfpage
C
rs
(pF)
10
0
01020
VGS= 0; f = 1 MHz.
VDS (V)
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
MRA920
30
September 1992 5
Page 6
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
= 25 °C; R
h
RF performance in CW operation in a common source class-B test circuit.
MODE OF OPERA TION
CW, class-B 175 28 50 30 > 13
Note
1. R1 included.
Ruggedness in class-B operation
The BLF245 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under
the following conditions:
= 0.3 K/W; R1 = 1 kΩ.
th mb-h
Z
f
(MHz)
V
(V)
DS
I
DQ
(mA)
P
(W)
L
G
P
(dB)
typ. 15.5
η
D
(%)
< 50
typ. 67
i
(Ω)
(note 1)
Z
(Ω)
L
2.0 − j2.7 3.9 + j4.4
175 12.5 50 12 typ. 12 typ. 66 2.4 − j2.5 3.8 + j1.3
=25°C; R
T
h
20
handbook, halfpage
G
p
(dB)
10
0
10 20 30 50
Class-B operation; VDS= 28 V; IDQ=50mA;
f = 175 MHz; T
= 0.3 K/W; at rated load power.
th mb-h
G
p
η
D
=25°C; R
h
th mb-h
= 0.3 K/W.
40
MGP172
PL (W)
Fig.9 Power gain and efficiency as functions of
load power, typical values.
100
η
(%)
50
0
1.8
MEA736
PIN (W)
60
handbook, halfpage
P
L
D
(W)
50
40
30
20
10
0 0.6 2.4
Class-B operation; VDS= 28 V; IDQ=50mA;
f = 175 MHz; T
=25°C; R
h
th mb-h
1.2
= 0.3 K/W.
Fig.10 Load power as a function of input power,
typical values.
September 1992 6
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Philips Semiconductors Product specification
VHF power MOS transistor BLF245
η
G
P
MGP173
D
p
L (W)
20
handbook, halfpage
G
p
(dB)
10
0
01020
Class-B operation; VDS= 12.5 V; IDQ= 50 mA;
f = 175 MHz; T
=25°C; R
h
th mb-h
= 0.3 K/W.
Fig.11 Power gain and efficiency as functions of
load power, typical values.
100
η
(%)
50
0
1.8
MEA737
PIN (W)
20
handbook, halfpage
D
P
L
(W)
10
0
0 0.6 2.4
Class-B operation; VDS= 12.5 V; IDQ= 50 mA;
f = 175 MHz; T
=25°C; R
h
th mb-h
1.2
= 0.3 K/W.
Fig.12 Load power as a function of input power,
typical values.
handbook, full pagewidth
Z
f = 175 MHz.
50 Ω
input
C1
C2
i
L1
R1
C3
R2
C4
+V
GG
D.U.T.
L2
Fig.13 Test circuit for class-B operation.
September 1992 7
C7
L3
C5
+V
DD
L6
C8
L4
C6
R3
L5
MGP174
C9
50 Ω
output
C10
Page 8
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
List of components (class-B test circuit)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1 film dielectric trimmer 4 to 40 pF 2222 809 07008
C2, C8 film dielectric trimmer 5 to 60 pF 2222 809 07011
C3 multilayer ceramic chip capacitor 100 pF 2222 854 13101
C4, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C5 ceramic capacitor 100 pF 2222 680 10101
C7 multilayer ceramic chip capacitor
(note 1)
C9 multilayer ceramic chip capacitor
(note 1)
C10 multilayer ceramic chip capacitor
(note 1)
L1 3 turns enamelled 0.5 mm copper
wire
L2, L3 stripline (note 2) 30 Ω 10 × 6mm
L4 6 turns enamelled 1.5 mm copper
wire
L5 grade 3B Ferroxcube RF choke 4312 020 36640
L6 2 turns enamelled 1.5 mm copper
wire
R1 metal film resistor 1 kΩ
R2 metal film resistor 1 MΩ
R3 metal film resistor 10 Ω
18 pF
27 pF
24 pF
13.5 nH length 3.5 mm
int. dia. 2 mm
leads 2 × 2mm
98 nH length 12.5 mm
int. dia. 5 mm
leads 2 × 2mm
24.5 nH length 4 mm
int. dia. 5 mm
leads 2 × 2mm
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are mounted on a double copper-clad PCB with epoxy fibre-glass dielectric (ε
thickness1⁄16inch.
September 1992 8
= 4.5),
r
Page 9
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
handbook, full pagewidth
C1 C2
+V
GG
C3
R2
C4
R1
L1
L2 L3
135
copper straps
rivets
copper strap
copper straps
C5
72
L5
C6
L4
L6
C7
R3
C8
+V
DD
C9
C10
The circuit and components are situated on one side of the epoxy fiber-glass board; the other side is unetched
copper and serves as an earth. Earth connections are made by means of fixing screws, hollow rivets and copper
straps under the sources and around the edges, to provide a direct contact between the copper on the
component side and the ground plane.
Dimensions in mm.
Fig.14 Component layout for 175 MHz class-B test circuit.
September 1992 9
MGP175
Page 10
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
40
handbook, halfpage
Z
i
(Ω)
30
20
−x
i
10
r
i
0
20 40 120
Class-B operation; VDS= 28 V; IDQ=50mA;
= 30 W; Th=25°C; R
P
L
60 80 100
= 0.3 K/W.
th mb-h
MGP177
f (MHz)
Fig.15 Input impedance as a function of frequency
(series components), typical values.
16
handbook, halfpage
Z
L
(Ω)
12
8
4
0
20 40 120
Class-B operation; VDS= 28 V; IDQ=50mA;
= 30 W; Th=25°C; R
P
L
R
L
X
L
60 80 100
= 0.3 K/W.
th mb-h
MGP178
f (MHz)
Fig.16 Load impedance as a function of frequency
(series components), typical values.
handbook, halfpage
Fig.17 Definition of MOS impedance.
40
handbook, halfpage
G
p
(dB)
30
20
10
Z
i
Z
MBA379
L
0
20 40 120
Class-B operation; VDS= 28 V; IDQ=50mA;
= 30 W; Th=25°C; R
P
L
60 80 100
= 0.3 K/W.
th mb-h
MGP179
f (MHz)
Fig.18 Power gain as a function of frequency,
typical values.
September 1992 10
Page 11
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads SOT123A
D
A
F
H
α
1
H
q
U
1
L
C
B
w
M
C
2
b
43
p
2
0 5 10 mm
scale
A
U
2
w
M
AB
1
c
U
3
Q
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
5.82
5.56
c
Db
9.73
0.18
9.47
0.10
0.397
0.383
0.007
0.004
IEC JEDEC EIAJ
0.373
0.371
D
9.63
9.42
F
1
2.72
20.71
2.31
19.93
0.815
0.107
0.091
0.221
0.785
0.203
REFERENCES
5.61
5.16
pH
3.33
3.04
0.131
0.120
Q
4.63
4.11
0.182
0.162
q
18.42
0.725
U
1
25.15
24.38
0.99
0.96
U2U
6.61
6.09
0.26
0.24
w
1
3
9.78
9.39
0.385
0.370
EUROPEAN
PROJECTION
UNIT
inches
A
7.47
mm
6.37
0.229
0.294
0.219
0.251
OUTLINE
VERSION
SOT123A 97-06-28
September 1992 11
w
2
1.020.51
0.040.02
ISSUE DATE
αL
45°
Page 12
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1992 12
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