Datasheet BLF244 Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF244
VHF power MOS transistor
Product specification
September 1992
Page 2
Philips Semiconductors Product specification
FEATURES
High power gain
Low noise figure
Easy power control
Good thermal stability
Withstands full load mismatch
Gold metallization ensures
excellent reliability.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.
The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange.
Matched gate-source voltage (V
GS
)
groups are available on request.
PINNING - SOT123
PIN CONFIGURATION
, halfpage
1
23
4
MSB057
g
MBB072
d
s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
PIN DESCRIPTION
1 drain 2 source 3 gate 4 source
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a common source test circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
CW, class-B 175 28 15 > 13 > 50
D
September 1992 2
Page 3
Philips Semiconductors Product specification
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
R
th j-mb
R
th mb-h
drain-source voltage 65 V gate-source voltage 20 V DC drain current 3A total power dissipation up to Tmb = 25 °C 38 W storage temperature 65 150 °C junction temperature 200 °C
thermal resistance from
Tmb=25°C; P
= 38 W 4.6 K/W
tot
junction to mounting base thermal resistance from
Tmb=25°C; P
= 38 W 0.3 K/W
tot
mounting base to heatsink
10
handbook, halfpage
I
D
(A)
(1)
1
1
10
110
(1) Current is this area may be limited by R (2) Tmb=25°C.
Fig.2 DC SOAR.
(2)
VDS (V)
.
DS(on)
MRA919
50
handbook, halfpage
P
tot
(W)
40
30
20
10
2
10
0
0 50 100 150
(1) Short-time operation during mismatch. (2) Continuous operation.
(1)
(2)
MGP151
Th (°C)
Fig.3 Power/temperature derating curves.
September 1992 3
Page 4
Philips Semiconductors Product specification
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
V
GS
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
F noise figure (see Fig. 13) I
drain-source breakdown voltage VGS = 0; ID=5mA 65 −− V drain-source leakage current VGS = 0; VDS = 28 V −−1mA gate-source leakage current ±VGS = 20 V; VDS = 0 −−1 µA gate-source threshold voltage ID = 5 mA; VDS = 10 V 2 4.5 V gate-source voltage difference of
ID = 5 mA; VDS = 10 V −−100 mV
matched devices forward transconductance ID = 0.75 A; VDS = 10 V 0.6 −− S drain-source on-state resistance ID = 0.75 A; VGS = 10 V 0.8 1.5 on-state drain current VGS = 10 V; VDS = 10 V 5 A input capacitance VGS = 0; VDS = 28 V; f = 1 MHz 60 pF output capacitance VGS = 0; VDS = 28 V; f = 1 MHz 40 pF feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz 4.5 pF
= 0.5 A; VDS = 28 V; R1 = 23 Ω;
D
4.3 dB Th = 25 °C; f = 175 MHz; R
th mb-h
= 0.3 K/W
handbook, halfpage
2
T.C.
(mV/K)
0
2
4
6
8
1
VDS= 10V; valid for Tj= 25 to 125 °C.
10 10
2
ID (mA)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical values.
MGP152
handbook, halfpage
3
10
6
I
D
(A)
4
2
0
048 16
VDS=10V. solid line: Tj=25°C. dotted line: Tj= 125 °C.
MGP153
12
V
(V)
GS
Fig.5 Drain current as a function of gate-source
voltage, typical values.
September 1992 4
Page 5
Philips Semiconductors Product specification
handbook, halfpage
2
R
DS(on)
()
1
0
0
VGS= 10 V; ID= 0.75 A.
40 80 160120
Tj (°C)
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical values.
MGP154
30
MGP155
VDS (V)
160
handbook, halfpage
C
(pF)
120
80
40
0
0
VGS= 0; f = 1 MHz.
C
is
C
os
10 20 40
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
20
handbook, halfpage
C
rs
(pF)
10
0
0
VGS= 0; f = 1 MHz.
20 40
V
(V)
DS
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
MGP156
September 1992 5
Page 6
Philips Semiconductors Product specification
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
= 25 °C; R
h
RF performance in CW operation in a common source class-B circuit.
MODE OF OPERA TION
CW, class-B 175 28 25 15 > 13
Note
1. R1 included.
Ruggedness in class-B operation
The BLF244 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions:
= 3 K/W; unless otherwise specified.
th mb-h
f
V
(MHz)
(V)
DS
I
(mA)
175 12.5 25 6 typ. 15 typ. 60 3.0 j4.0 4.5 + j3.3 100
DQ
P
(W)
L
G
P
(dB)
typ. 17
η
D
(%)
> 50
typ. 65
Z
i
()
(note 1)
Z
()
L
R1
()
3.0 j4.0 6.3 + j9.8 46.4//46.4
T
=25°C; R
h
30
handbook, halfpage
P
L
(W)
20
10
02
Class-B operation; VDS= 28 V; IDQ=25mA; f = 175 MHz; T
= 0.3 K/W; at rated load power.
th mb-h
1
P
=25°C; R
h
th mb-h
= 0.3 K/W.
IN
(W)
Fig.9 Load power as a function of input power,
typical values.
MGP157
20
handbook, halfpage
G
p
(dB)
10
0
0
Class-B operation; VDS= 28 V; IDQ=25mA; f = 175 MHz; T
=25°C; R
h
G
p
η
D
10 20 30
= 0.3 K/W.
th mb-h
MGP158
PL (W)
Fig.10 Power gain and efficiency as functions of
load power, typical values.
100
(%)
50
0
η
D
September 1992 6
Page 7
Philips Semiconductors Product specification
IN
MGP159
(W)
20
handbook, halfpage
P
L
(W)
10
0
012
Class-B operation; VDS= 12.5 V; IDQ= 25 mA; f = 175 MHz; T
=25°C; R
h
th mb-h
= 0.3 K/W.
P
Fig.11 Load power as a function of input power,
typical values.
20
handbook, halfpage
G
p
(dB)
16
12
8
4
0
Class-B operation; VDS= 12.5 V; IDQ= 25 mA; f = 175 MHz; T
G
p
η
D
48 1612
=25°C; R
h
th mb-h
= 0.3 K/W.
MGP160
PL (W)
Fig.12 Power gain and efficiency as functions of
load power, typical values.
100
(%)
80
60
40
20
η
D
+V
handbook, full pagewidth
50 input
f = 175 MHz.
C1
C2
C3
L1
C5
C4
G
R2
C6
R1
L2
D.U.T.
L3
Fig.13 Test circuit for class-B operation.
September 1992 7
R3
L4
C14
C7
L6
L5
C8
C9
+V
D
C13
C11
C10
C12
50
output
MGP161
L8L7
Page 8
Philips Semiconductors Product specification
List of components (class-B test circuit)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C12 multilayer ceramic chip capacitor
(note 1)
C2 multilayer ceramic chip capacitor
(note 1) C3, C4, C9 film dielectric trimmer 5 to 60 pF 2222 809 08003 C5 multilayer ceramic chip capacitor
(note 1) C6 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C7 multilayer ceramic chip capacitor
(note 1) C8 multilayer ceramic chip capacitor
(note 1) C10, C11 multilayer ceramic chip capacitor
(note 1) C13 solid tantalum capacitor 2.2 µF C14 multilayer ceramic chip capacitor 100 nF 2222 852 47104 L1 4 turns enamelled 1 mm copper wire 32 nH length 6.3 mm
L2 1 turn enamelled 1 mm copper wire 12.2 nH int. dia. 5.6 mm
L3, L4 stripline (note 2) 30 15 × 6 mm L5 6 turns enamelled 1 mm copper wire 1 19nH length 10.4 mm
L6 grade 3B Ferroxcube RF choke 4312 020 36640 L7 2 turns enamelled 1 mm copper wire 19 nH length 2.4 mm
L8 4 turns enamelled 1 mm copper wire 28.5 nH length 8.5 mm
R1 metal film resistor (note 3) R2 0.4 W metal film resistor 1 M R3 0.4 W metal film resistor 10
680 nF
20 pF
75 pF
100 pF
47 pF
11 pF
int. dia. 3 mm leads 2 × 5mm
leads 2 × 5mm
int. dia. 6 mm leads 2 × 5mm
int. dia. 3 mm leads 2 × 5mm
int. dia. 3 mm leads 2 × 5mm
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (ε thickness1⁄16inch.
3. Refer to Application Information for value.
September 1992 8
= 4.5),
r
Page 9
Philips Semiconductors Product specification
150
handbook, full pagewidth
strap
C2
C1
C3 C4
L1
rivet
C5
+V
70
strap
L6
+V
R2
G
R1
L2
C6
L3 L4
C7 C14
L5
R3
L7
D
C13
C8
C9
L8
C11
C10
C12
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being unetched copper to serve as ground plane. Earth connections are made by fixing screws, copper straps and hollow rivets under the sources and around the edges to provide a direct contact between the copper on the component side and the ground plane.
Dimensions in mm.
Fig.14 Component layout for 175 MHz class-B test circuit.
September 1992 9
MGP162
Page 10
Philips Semiconductors Product specification
60
handbook, halfpage
Z
i
()
40
x
i
20
r
i
0
20 120
Class-B operation; VDS=28V;IDQ=25mA;
= 15 W; Th=25°C; R
P
L
40 60 80 100
= 0.3 K/W.
th mb-h
MGP164
f (MHz)
Fig.15 Input impedance as a function of frequency
(series components), typical values.
25
handbook, halfpage
Z
L
()
20
15
10
5
0
20 120
Class-B operation; VDS=28V;IDQ=25mA;
= 15 W; Th=25°C; R
P
L
R
L
X
L
40 60 80 100
= 0.3 K/W.
th mb-h
MGP165
f (MHz)
Fig.16 Load impedance as a function of frequency
(series components), typical values.
40
handbook, halfpage
G
p
(dB)
36
32
28
24
20
20 120
Class-B operation; VDS=28V;IDQ=25mA;
= 15 W; Th=25°C; R
P
L
40 60 80 100
= 0.3 K/W.
th mb-h
MGP166
f (MHz)
Fig.17 Power gain as function of frequency, typical
values.
September 1992 10
Page 11
Philips Semiconductors Product specification
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads SOT123A
D
A
F
H
α
1
H
q
U
1
L
C
B
w
M
C
2
b
43
p
2
0 5 10 mm
scale
A
U
2
w
M
AB
1
c
U
3
Q
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
5.82
5.56
c
Db
9.73
0.18
9.47
0.10
0.397
0.383
0.007
0.004
IEC JEDEC EIAJ
0.373
0.371
D
9.63
9.42
F
1
2.72
20.71
2.31
0.107
0.091
5.61
19.93
5.16
0.815
0.221
0.785
0.203
REFERENCES
pH
3.33
3.04
0.131
0.120
Q
4.63
4.11
0.182
0.162
q
18.42
0.725
U
1
25.15
24.38
0.99
0.96
U2U
6.61
6.09
0.26
0.24
PROJECTION
w
3
9.78
9.39
0.385
0.370
EUROPEAN
1
UNIT
inches
A
7.47
mm
6.37
0.229
0.294
0.219
0.251
OUTLINE
VERSION
SOT123A 97-06-28
September 1992 11
w
2
1.020.51
0.040.02
ISSUE DATE
αL
45°
Page 12
Philips Semiconductors Product specification
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1992 12
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