Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.
The transistor is encapsulated in a
4-lead SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
Matched gate-source voltage (V
GS
)
groups are available on request.
PINNING - SOT123
PIN CONFIGURATION
, halfpage
1
23
4
MSB057
g
MBB072
d
s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
PINDESCRIPTION
1drain
2source
3gate
4source
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a common source test circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
CW, class-B1752815> 13> 50
D
September 19922
Page 3
Philips SemiconductorsProduct specification
VHF power MOS transistorBLF244
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOLPARAMETERCONDITIONSTHERMAL RESISTANCE
R
th j-mb
R
th mb-h
drain-source voltage−65V
gate-source voltage−20V
DC drain current−3A
total power dissipationup to Tmb = 25 °C−38W
storage temperature−65150°C
junction temperature−200°C
thermal resistance from
Tmb=25°C; P
= 38 W4.6 K/W
tot
junction to mounting base
thermal resistance from
Tmb=25°C; P
= 38 W0.3 K/W
tot
mounting base to heatsink
10
handbook, halfpage
I
D
(A)
(1)
1
−1
10
110
(1) Current is this area may be limited by R
(2) Tmb=25°C.
Fig.2 DC SOAR.
(2)
VDS (V)
.
DS(on)
MRA919
50
handbook, halfpage
P
tot
(W)
40
30
20
10
2
10
0
050100150
(1) Short-time operation during mismatch.
(2) Continuous operation.
L21 turn enamelled 1 mm copper wire12.2 nHint. dia. 5.6 mm
L3, L4stripline (note 2)30 Ω15 × 6 mm
L56 turns enamelled 1 mm copper wire 1 19nHlength 10.4 mm
L6grade 3B Ferroxcube RF choke4312 020 36640
L72 turns enamelled 1 mm copper wire 19 nHlength 2.4 mm
L84 turns enamelled 1 mm copper wire 28.5 nHlength 8.5 mm
R1metal film resistor (note 3)
R20.4 W metal film resistor1 MΩ
R30.4 W metal film resistor10 Ω
680 nF
20 pF
75 pF
100 pF
47 pF
11 pF
int. dia. 3 mm
leads 2 × 5mm
leads 2 × 5mm
int. dia. 6 mm
leads 2 × 5mm
int. dia. 3 mm
leads 2 × 5mm
int. dia. 3 mm
leads 2 × 5mm
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (ε
thickness1⁄16inch.
3. Refer to Application Information for value.
September 19928
= 4.5),
r
Page 9
Philips SemiconductorsProduct specification
VHF power MOS transistorBLF244
150
handbook, full pagewidth
strap
C2
C1
C3C4
L1
rivet
C5
+V
70
strap
L6
+V
R2
G
R1
L2
C6
L3L4
C7 C14
L5
R3
L7
D
C13
C8
C9
L8
C11
C10
C12
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being
unetched copper to serve as ground plane. Earth connections are made by fixing screws, copper straps and
hollow rivets under the sources and around the edges to provide a direct contact between the copper on the
component side and the ground plane.
Dimensions in mm.
Fig.14 Component layout for 175 MHz class-B test circuit.
September 19929
MGP162
Page 10
Philips SemiconductorsProduct specification
VHF power MOS transistorBLF244
60
handbook, halfpage
Z
i
(Ω)
40
x
i
20
r
i
0
20120
Class-B operation; VDS=28V;IDQ=25mA;
= 15 W; Th=25°C; R
P
L
406080100
= 0.3 K/W.
th mb-h
MGP164
f (MHz)
Fig.15 Input impedance as a function of frequency
(series components), typical values.
25
handbook, halfpage
Z
L
(Ω)
20
15
10
5
0
20120
Class-B operation; VDS=28V;IDQ=25mA;
= 15 W; Th=25°C; R
P
L
R
L
X
L
406080100
= 0.3 K/W.
th mb-h
MGP165
f (MHz)
Fig.16 Load impedance as a function of frequency
(series components), typical values.
40
handbook, halfpage
G
p
(dB)
36
32
28
24
20
20120
Class-B operation; VDS=28V;IDQ=25mA;
= 15 W; Th=25°C; R
P
L
406080100
= 0.3 K/W.
th mb-h
MGP166
f (MHz)
Fig.17 Power gain as function of frequency, typical
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
5.82
5.56
c
Db
9.73
0.18
9.47
0.10
0.397
0.383
0.007
0.004
IEC JEDEC EIAJ
0.373
0.371
D
9.63
9.42
F
1
2.72
20.71
2.31
0.107
0.091
5.61
19.93
5.16
0.815
0.221
0.785
0.203
REFERENCES
pH
3.33
3.04
0.131
0.120
Q
4.63
4.11
0.182
0.162
q
18.42
0.725
U
1
25.15
24.38
0.99
0.96
U2U
6.61
6.09
0.26
0.24
PROJECTION
w
3
9.78
9.39
0.385
0.370
EUROPEAN
1
UNIT
inches
A
7.47
mm
6.37
0.229
0.294
0.219
0.251
OUTLINE
VERSION
SOT123A97-06-28
September 199211
w
2
1.020.51
0.040.02
ISSUE DATE
αL
45°
Page 12
Philips SemiconductorsProduct specification
VHF power MOS transistorBLF244
DEFINITIONS
Data Sheet Status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 199212
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