Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for professional transmitter
applications in the HF/VHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
PINNING - SOT123
PIN CONFIGURATION
alfpage
1
23
4
MSB057
g
MBB072
d
s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
PINDESCRIPTION
1drain
2source
3gate
4source
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a common source test circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
L
G
(dB)
CW, class-B175285> 13
typ. 16
p
η
D
(%)
> 50
typ. 60
September 19922
Page 3
Philips SemiconductorsProduct specification
HF/VHF power MOS transistorBLF242
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOLPARAMETERCONDITIONSTHERMAL RESISTANCE
R
th j-mb
R
th mb-h
drain-source voltage−65V
gate-source voltage−20V
DC drain current−1A
total power dissipationup to Tmb = 25 °C−16W
storage temperature−65150°C
junction temperature−200°C
thermal resistance from
Tmb=25°C; P
= 16 W11 K/W
tot
junction to mounting base
thermal resistance from
Tmb=25°C; P
= 16 W0.3 K/W
tot
mounting base to heatsink
10
handbook, halfpage
I
D
(A)
1
(1)
−1
10
−2
10
1
(1) Current is this area may be limited by R
(2) Tmb=25°C.
10
Fig.2 DC SOAR.
VDS (V)
DS(on)
MRA918
(2)
2
10
.
20
handbook, halfpage
P
tot
(W)
10
0
050100150
(1) Continuous operation.
(2) Short-time operation during mismatch.
leads 2 × 5mm
L55 turns enamelled 1 mm copper wire79 nHlength 9.1 mm
int. dia. 5 mm
leads 2 × 5mm
L6grade 3B Ferroxcube RF choke4312 020 36640
R10.5 W metal film resistor47 Ω
R20.5 W metal film resistor10 Ω
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (ε
thickness1⁄16inch.
September 19927
= 4.5),
r
Page 8
Philips SemiconductorsProduct specification
HF/VHF power MOS transistorBLF242
handbook, full pagewidth
strap
C1
rivet
C2
+V
150
strap
70
L6
+V
C5
R2
G
R1
L1
C3
C4
L2L3
L4
C8
L5
D
C9
C6
C7
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by fixing screws, copper straps and hollow rivets at the
edges of the board and under the source.
Dimensions in mm.
Fig.12 Component layout for 175 MHz class-B test circuit.
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
5.82
5.56
c
Db
9.73
0.18
9.47
0.10
0.397
0.383
0.007
0.004
IEC JEDEC EIAJ
0.373
0.371
D
9.63
9.42
F
1
2.72
20.71
2.31
19.93
0.815
0.107
0.091
0.221
0.785
0.203
REFERENCES
5.61
5.16
pH
3.33
3.04
0.131
0.120
Q
4.63
4.11
0.182
0.162
q
18.42
0.725
U
1
25.15
24.38
0.99
0.96
U2U
6.61
6.09
0.26
0.24
w
1
3
9.78
9.39
0.385
0.370
EUROPEAN
PROJECTION
UNIT
inches
A
7.47
mm
6.37
0.229
0.294
0.219
0.251
OUTLINE
VERSION
SOT123A97-06-28
September 199210
w
2
1.020.51
0.040.02
ISSUE DATE
αL
45°
Page 11
Philips SemiconductorsProduct specification
HF/VHF power MOS transistorBLF242
DEFINITIONS
Data Sheet Status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 199211
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