Datasheet BLF242 Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF242
HF/VHF power MOS transistor
Product specification
September 1992
Page 2
Philips Semiconductors Product specification
FEATURES
High power gain
Low noise
Easy power control
Good thermal stability
Withstands full load mismatch
Gold metallization ensures
excellent reliability.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range.
The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange.
PINNING - SOT123
PIN CONFIGURATION
alfpage
1
23
4
MSB057
g
MBB072
d
s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
PIN DESCRIPTION
1 drain 2 source 3 gate 4 source
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a common source test circuit.
h
f
(MHz)
V
(V)
DS
P
(W)
L
G
(dB)
CW, class-B 175 28 5 > 13
typ. 16
p
η
D
(%)
> 50
typ. 60
September 1992 2
Page 3
Philips Semiconductors Product specification
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
R
th j-mb
R
th mb-h
drain-source voltage 65 V gate-source voltage 20 V DC drain current 1A total power dissipation up to Tmb = 25 °C 16 W storage temperature 65 150 °C junction temperature 200 °C
thermal resistance from
Tmb=25°C; P
= 16 W 11 K/W
tot
junction to mounting base thermal resistance from
Tmb=25°C; P
= 16 W 0.3 K/W
tot
mounting base to heatsink
10
handbook, halfpage
I
D
(A)
1
(1)
1
10
2
10
1
(1) Current is this area may be limited by R (2) Tmb=25°C.
10
Fig.2 DC SOAR.
VDS (V)
DS(on)
MRA918
(2)
2
10
.
20
handbook, halfpage
P
tot
(W)
10
0
0 50 100 150
(1) Continuous operation. (2) Short-time operation during mismatch.
(2)
(1)
MPG141
Th (°C)
Fig.3 Power/temperature derating curves.
September 1992 3
Page 4
Philips Semiconductors Product specification
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage VGS = 0; ID= 0.1 mA 65 −− V drain-source leakage current VGS = 0; VDS = 28 V −−10 µA gate-source leakage current ±VGS = 20 V; VDS = 0 −−1 µA gate-source threshold voltage ID = 3 mA; VDS = 10 V 2 4.5 V forward transconductance ID = 0.3 A; VDS = 10 V 0.16 0.24 S drain-source on-state resistance ID = 0.3 A; VGS = 1 V 3.3 5 on-state drain current VGS = 10 V; VGS = 10 V 1.2 A input capacitance VGS = 0; VDS = 28 V; f = 1 MHz 13 pF output capacitance VGS = 0; VDS = 28 V; f = 1 MHz 9.4 pF feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz 1.7 pF
handbook, halfpage
4
T.C.
(mV/K)
2
0
–2
–4
0 100 200 300
VDS=10V.
ID (mA)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical values.
MBB777
1.5
handbook, halfpage
I
D
(A)
1
0.5
0
0
VDS= 10V; Tj=25°C.
51015
MGP142
VGS (V)
Fig.5 Drain current as a function of gate-source
voltage, typical values.
September 1992 4
Page 5
Philips Semiconductors Product specification
handbook, halfpage
6
R
DS (on)
()
4
2
0
0
ID= 0.3 A; VGS=10V.
50 100 150
Tj (oC)
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical values.
MBB778
30
handbook, halfpage
C
(pF)
20
10
0
0
VGS= 0; f = 1 MHz.
C
is
C
os
10 20 30
MBB776
VDS (V)
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
handbook, halfpage
6
C
rs
(pF)
4
2
0
0
VGS= 0; f = 1 MHz.
10 20 30
VDS (V)
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
MBB775
September 1992 5
Page 6
Philips Semiconductors Product specification
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
= 25 °C; R
h
RF performance in CW operation in a common source class-B test circuit.
= 0.3 K/W; unless otherwise specified.
th mb-h
MODE OF OPERA TION
f
(MHz)
V
(V)
DS
I
DQ
(mA)
P
(W)
L
G
(dB)
CW, class-B 175 28 10 5 > 13
typ. 16
Ruggedness in class-B operation
The BLF242 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions:
VDS= 28 V; f =175 MHz at rated output power.
Noise figure (see Fig.11) V
= 28 V; ID= 0.2 A; f = 175 MHz;
DS
RGS=47Ω; Th=25°C. Input and output power matched for PL=5W; F = typ. 5.5 dB.
20
handbook, halfpage
G
p
(dB)
MGP143
100
η
G
p
d
(%)
10
handbook, halfpage
P
L
(W)
P
η
D
(%)
> 50
R
()
47
GS
typ. 60
MGP144
η
d
10
0
0510
Class-B operation; VDS= 28 V; IDQ=10mA;
=47Ω; f = 175 MHz.
R
GS
PL (W)
50
0
Fig.9 Power gain and efficiency as functions of
load power, typical values.
September 1992 6
5
0
0 0.5 1
Class-B operation; VDS= 28 V; IDQ=10mA;
=47Ω; f = 175 MHz.
R
GS
P
(W)
IN
Fig.10 Load power as a function of input power,
typical values.
Page 7
Philips Semiconductors Product specification
handbook, full pagewidth
input 50
f = 175 MHz.
C1
C2
D.U.T.
+V
L2
R1
C3
C3
G
L1
L3
L4
C5
C6
L5
C7
L6
R2
C8
output
50
C9
MGP145
+V
D
Fig.11 Test circuit for class-B operation.
List of components (class-B test circuit)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C2, C7 film dielectric trimmer 4 to 40 pF 2222 809 08002 C3 multilayer ceramic chip capacitor
100 pF
(note 1) C4, C8 ceramic chip capacitor 100 nF 2222 852 47104 C6 film dielectric trimmer 5 to 60 pF 2222 809 08003 C9 electrolytic capacitor 2.2 µF, 40 V L1 5 turns enamelled 0.7 mm copper wire 53 nH length 5.4 mm
int. dia. 3 mm
leads 2 × 5mm L2, L3 stripline (note 2) 30 10 × 6mm L4 11 turns enamelled 1 mm copper wire 500 nH length 15.5 mm
int. dia. 8 mm
leads 2 × 5mm L5 5 turns enamelled 1 mm copper wire 79 nH length 9.1 mm
int. dia. 5 mm
leads 2 × 5mm L6 grade 3B Ferroxcube RF choke 4312 020 36640 R1 0.5 W metal film resistor 47 R2 0.5 W metal film resistor 10
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (ε thickness1⁄16inch.
September 1992 7
= 4.5),
r
Page 8
Philips Semiconductors Product specification
handbook, full pagewidth
strap
C1
rivet
C2
+V
150
strap
70
L6
+V
C5
R2
G
R1
L1
C3 C4
L2 L3
L4
C8
L5
D
C9
C6
C7
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by fixing screws, copper straps and hollow rivets at the edges of the board and under the source.
Dimensions in mm.
Fig.12 Component layout for 175 MHz class-B test circuit.
September 1992 8
MGP146
Page 9
Philips Semiconductors Product specification
50
handbook, halfpage
Z
i
()
30
10
10
30
0
Class-B operation; VDS= 28 V; PL=30W;
=47Ω;Th=25°C.
R
GS
r
i
x
i
100
MGP150
f (MHz)
Fig.13 Input impedance as a function of frequency
(series components), typical values.
200
100
handbook, halfpage
Z
L
()
50
0
0 200
Class-B operation; VDS= 28 V; PL=30W;
=47Ω;Th=25°C.
R
GS
R
L
X
L
100
MGP149
f (MHz)
Fig.14 Load impedance as a function of frequency
(series components), typical values.
20
handbook, halfpage
G
p
(dB)
10
0
0 200
Class-B operation; VDS= 28 V; PL=30W;
=47Ω;Th=25°C.
R
GS
100
f (MHz)
Fig.15 Power gain as a function of frequency,
typical values.
MGP148
September 1992 9
Page 10
Philips Semiconductors Product specification
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads SOT123A
D
A
F
H
α
1
H
q
U
1
L
C
B
w
M
C
2
b
43
p
2
0 5 10 mm
scale
A
U
2
w
M
AB
1
c
U
3
Q
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
5.82
5.56
c
Db
9.73
0.18
9.47
0.10
0.397
0.383
0.007
0.004
IEC JEDEC EIAJ
0.373
0.371
D
9.63
9.42
F
1
2.72
20.71
2.31
19.93
0.815
0.107
0.091
0.221
0.785
0.203
REFERENCES
5.61
5.16
pH
3.33
3.04
0.131
0.120
Q
4.63
4.11
0.182
0.162
q
18.42
0.725
U
1
25.15
24.38
0.99
0.96
U2U
6.61
6.09
0.26
0.24
w
1
3
9.78
9.39
0.385
0.370
EUROPEAN
PROJECTION
UNIT
inches
A
7.47
mm
6.37
0.229
0.294
0.219
0.251
OUTLINE
VERSION
SOT123A 97-06-28
September 1992 10
w
2
1.020.51
0.040.02
ISSUE DATE
αL
45°
Page 11
Philips Semiconductors Product specification
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1992 11
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