Datasheet BLF225 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLF225

VHF power MOS transistor

Product specification

September 1992

Philips Semiconductors Product specification

VHF power MOS transistor BLF225

FEATURES

• Easy power control

• Good thermal stability

• Withstands full load mismatch.

DESCRIPTION

Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the VHF
frequency range.

The transistor is encapsulated in a
4-lead, SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.

PINNING - SOT123

PIN DESCRIPTION

1 drain
2 source
3 gate
4 source

PIN CONFIGURATION

, halfpage

1

23

4

MSB057

g

MBB072

d

s

Fig.1 Simplified outline and symbol.

CAUTION

The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

= 25 °C in a common source test circuit.

h

f

(MHz)

V

(V)

DS

P

(W)

L

G

p

(dB)

η

(%)

CW, class-B 175 12.5 30 > 8.5 > 60

September 1992 2

D

Philips Semiconductors Product specification

VHF power MOS transistor BLF225

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

±V

GS

I

D

P

tot

T

stg

T

j

THERMAL RESISTANCE

SYMBOL PARAMETER THERMAL RESISTANCE

R

th j-mb

R

th mb-h

drain-source voltage − 40 V
gate-source voltage − 20 V
DC drain current − 9A
total power dissipation up to Tmb = 25 °C − 68 W
storage temperature −65 150 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base 2.6 K/W
thermal resistance from mounting base to heatsink 0.3 K/W

2

10

handbook, halfpage

I

D

(A)

10

(1)

1

−1

10

1

(1) Current is this area may be limited by R
(2) Tmb=25°C.

10

Fig.2 DC SOAR.

(2)

VDS (V)

DS(on)

MRA915

2

10

.

100

handbook, halfpage

P

tot

(W)

80

60

40

20

0

04080

(1) Continuous operation.
(2) Short-time operation during mismatch.

(2)

(1)

120

MGP122

Th (°C)

160

Fig.3 Power/temperature derating curves.

September 1992 3

Philips Semiconductors Product specification

VHF power MOS transistor BLF225

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

g

fs

R

DS(on)

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage VGS = 0; ID = 30 mA 40 −− V
drain-source leakage current VGS = 0; VDS = 12.5 V −−1mA
gate-source leakage current ±VGS = 20 V; VDS = 0 −−1 µA
gate-source threshold voltage ID = 30 mA; VDS = 10 V 2 − 4.5 V
forward transconductance ID = 3.5 A; VDS = 10 V 1.5 2.2 − S
drain-source on-state resistance ID = 3.5 A; VGS = 15 V − 0.25 0.35 Ω
on-state drain current VGS = 15 V; VDS = 10 V − 16 − A
input capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 120 − pF
output capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 140 − pF
feedback capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 20 − pF

handbook, halfpage

6

T.C.

(mV/K)

4

2

0

−2

−4

−6

10

VDS=10V.

2

1

10

1

ID (A)

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current, typical
values.

MEA741

20

handbook, halfpage

I

D

(A)

15

10

5

10

0

0

VDS=10V.

510

MRA244

15 20

VGS (V)

Fig.5 Drain current as a function of gate-source

voltage, typical values.

September 1992 4

Philips Semiconductors Product specification

VHF power MOS transistor BLF225

0.5

handbook, halfpage

R

DS(on)

(Ω)

0.4

0.3

0.2

0.1

0

VGS=15V;

= 3.5A.

I

D

0

50 100

Tj (°C)

Fig.6 Drain-source on-state resistance as a

function of junction temperature, typical
values.

MGP123

150

12

MEA739

VDS (V)

600

handbook, halfpage

C

(pF)

400

200

0

04

VGS= 0; f = 1 MHz.

C

os

C

is

8

Fig.7 Input and output capacitance as functions

of drain-source voltage, typical values.

16

60

handbook, halfpage

C

rs

(pF)

50

40

30

20

10

0

0

VGS= 0; f = 1 MHz.

48

MRA242

12 16

V

(V)

DS

Fig.8 Feedback capacitance as a function of

drain-source voltage, typical values.

September 1992 5

Philips Semiconductors Product specification

VHF power MOS transistor BLF225

APPLICATION INFORMATION FOR CLASS-B OPERATION

T

= 25 °C; R

h

RF performance in CW operation in a common source class-B test circuit.

= 0.3 K/W; unless otherwise specified.

th mb-h

MODE OF OPERATION

f

(MHz)

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

(dB)

CW, class-B 175 12.5 100 30 > 8.5

typ. 9.5

Ruggedness in class-B- operation

The BLF225 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under the
following conditions:

VDS= 15.5 V; f = 175 MHz at rated load power.

20

handbook, halfpage

G

p

(dB)

15

10

MGP124

80

η

G

p

η

(%)

60

40

50

handbook, halfpage

P

L

(W)

40

30

20

P

η

C

(%)

> 60

typ. 70

MEA740

5

0

010 50

Class-B operation; VDS= 12.5 V; IDQ= 100 mA;
f = 175 MHz.

20 30 40

PL (W)

20

0

Fig.9 Power gain and efficiency as functions of

load power, typical values.

10

0

04

Class-B operation; VDS= 12.5 V; IDQ= 100 mA;
f = 175 MHz.

8

P

IN

(W)

12

Fig.10 Load power as a function of input power,

typical values.

September 1992 6

Philips Semiconductors Product specification

VHF power MOS transistor BLF225

handbook, full pagewidth

50 Ω
input

f = 175 MHz.

C1

L3

C2

D.U.T.

R3

R1

C3

C4

L2

V

BIAS

L1

R2

Fig.11 Test circuit for class-B operation.

C5

C6

C7

C8

C9

MGP125

50 Ω
output

C10

L6

L4

R4

L5

V

DS

September 1992 7

Philips Semiconductors Product specification

VHF power MOS transistor BLF225

List of components (class-B test circuit)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1 film dielectric trimmer 4 to 40 pF 2222 809 07008
C2, C10 film dielectric trimmer 5 to 60 pF 2222 809 07011
C3 multilayer ceramic chip capacitor

(note 1)
C4 ceramic chip capacitor 100 nF, 50 V 2222 852 47104
C5 multilayer ceramic chip capacitor

(note 1)
C6 electrolytic capacitor 10 µF, 63 V 2222 030 38109
C7 polyester capacitor 100 nF, 250 V
C8 multilayer ceramic chip capacitor

(note 1)
C9 film dielectric trimmer 7 to 100 pF 2222 809 07015
L1 3 turns enamelled 0.5 mm copper

wire

L2, L3 stripline (note 2) 31 Ω 12 × 6mm
L4 3 turns enamelled 1.5 mm copper

wire

L5 grade 3B Ferroxcube RF choke 4312 020 36642
L6 1 turn enamelled 1.5 mm copper

wire

R1 0.4 W metal film resistor 1 kΩ 2322 151 51002
R2 0.4 W metal film resistor 1 MΩ 2322 151 51005
R3 10 turns cermet potentiometer 5 kΩ
R4 0.4 W metal film resistor 10 Ω 2322 151 51009

100 pF, 500 V

680 pF, 500 V

43 pF, 500 V

18 nH length 3.3 mm

int. dia. 2 mm
leads 2 × 5mm

28 nH length 8.2 mm

int. dia. 4 mm
leads 2 × 5mm

36 nH length 4 mm

int. dia. 3.5 mm
leads 2 × 5mm

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (ε
thickness1⁄16inch.

September 1992 8

= 4.5),

r

Philips Semiconductors Product specification

VHF power MOS transistor BLF225

handbook, full pagewidth

strap

C3

R1

L1

R3

rivets

R2

L2

C4

150

C5

L4

rivets

72

strap

L5

C7

L3

L6

C6

R4

C8

C1 C2

The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of copper straps and hollow rivets for a
direct contact between upper and lower sheets.

Dimensions in mm.

Fig.12 Component layout for 175 MHz class-B test circuit.

September 1992 9

C9

C10

MGP126

Philips Semiconductors Product specification

VHF power MOS transistor BLF225

150

MGP128

f (MHz)

10

handbook, halfpage

Z

i

(Ω)

0

−10

−20

−30

0 50 100 200

Class B-operation; VDS= 12.5 V; IDQ= 100 mA;

=30W.

P

L

r

i

x

i

Fig.13 Input impedance as a function of frequency

(series components), typical values.

handbook, halfpage

4

Z

L

(Ω)

2

0

−2
0

Class B-operation; VDS= 12.5 V; IDQ= 100 mA;

=30W.

P

L

50 100 200150

R

X

L

L

MGP129

f (MHz)

Fig.14 Load impedance as a function of frequency

(series components), typical values.

handbook, halfpage

Fig.15 Definition of MOS impedance.

150

MGA053

f (MHz)

200

30

handbook, halfpage

G

p

(dB)

20

10

Z

i

Z

MBA379

L

0

0

Class-B operation; VDS= 12.5 V; IDQ= 100 mA;

=30W.

P

L

50 100

Fig.16 Power gain as a function of frequency,

typical values.

September 1992 10

Philips Semiconductors Product specification

VHF power MOS transistor BLF225

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT123A

D

A

F

H

α

1

H

q

U

1

L

C

B

w

M

C

2

b

43

p

2

0 5 10 mm

scale

A

U

2

w

M

AB

1

c

U

3

Q

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.82

5.56

c

Db

9.73

0.18

9.47

0.10

0.397

0.383

0.007

0.004

IEC JEDEC EIAJ

0.373

0.371

D

9.63

9.42

F

1

2.72

20.71

2.31

0.107

0.091

5.61

19.93

5.16

0.815

0.221

0.785

0.203

REFERENCES

pH

3.33

3.04

0.131

0.120

Q

4.63

4.11

0.182

0.162

q

18.42

0.725

U

25.15

24.38

0.99

0.96

1

U2U

6.61

6.09

0.26

0.24

PROJECTION

w

3

9.78

9.39

0.385

0.370

EUROPEAN

1

UNIT

inches

A

7.47

mm

6.37

0.229

0.294

0.219

0.251

OUTLINE
VERSION

SOT123A 97-06-28

September 1992 11

w

2

1.020.51

0.040.02

ISSUE DATE

αL

45°

Philips Semiconductors Product specification

VHF power MOS transistor BLF225

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

September 1992 12