Page 1
DATA SH EET
Product specification
Supersedes data of 1999 Jul 01
1999 Dec 02
DISCRETE SEMICONDUCTORS
BLF2047
UHF power LDMOS transistor
ook, halfpage
M3D379
Page 2
1999 Dec 02 2
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on underside eliminates DC isolators, reducing
common mode inductance
• Designed for broadband operation (1.8 to 2.2 GHz).
• Internal input and output matching for high gain and
efficiency
APPLICATIONS
• Common source class-AB operation for PCN and PCS
applications in the 1800 to 2200 MHz frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange SOT502A
package with a ceramic cap. The common source is
connected to the mounting flange.
PINNING
PIN DESCRIPTION
1 drain
2 gate
3 source connected to flange
handbook, halfpage
Top view
MBK394
1
2
3
Fig.1 Simplified outline SOT502A.
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
Two-tone, class-AB f
1
= 2200; f2= 2200.1
26 65 (PEP) >10 >30 ≤−25
28 65 (PEP) typ. 12.6 typ. 31 typ. −29
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
Page 3
1999 Dec 02 3
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Determined under specified RF operating conditions, based on maximum peak junction temperature.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER MIN. MAX. UNIT
V
DS
drain-source voltage − 65 V
V
GS
gate-source voltage −±15 V
I
D
DC drain current − 9A
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 200 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-h
thermal resistance from junction to heatsink Th=25°C, P
tot
= 152 W, note 1 1.15 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
drain-source breakdown voltage VGS= 0; ID= 1.4 mA 65 −−V
V
GSth
gate-source threshold voltage VDS= 10 V; ID= 140 mA 1.5 − 3.5 V
I
DSS
drain-source leakage current VGS= 0; VDS=26V −−10 µA
I
DSX
on-state drain current VGS=V
GSth
+9V; VDS=10V 18 −−A
I
GSS
gate leakage current VGS= ±15 V; VDS=0 −−250 nA
g
fs
forward transconductance VDS= 10 V; ID=5A − 4 − S
R
DSon
drain-source on-state resistance VGS=V
GSth
+9V; ID=5A − 0.17 −Ω
C
rss
feedback capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 3.4 − pF
Page 4
1999 Dec 02 4
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th=25°C; R
th j-h
= 1.15 K/W; unless otherwise specified.
Ruggedness in class-AB operation
The BLF2047is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
DS
= 26 V; IDQ= 400 mA; PL= 65 W (CW); f = 2200 MHz.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
I
DQ
(mA)
P
L
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
Two-tone, class-AB f
1
= 2200; f2= 2200.1
26 400 65 (PEP) >10 >30 ≤−25
28 400 65 (PEP) typ. 12.6 typ. 31 typ. −29
handbook, halfpage
02040 80
15
5
MGS914
60
10
50
0
40
30
20
10
G
p
(dB)
G
p
η
D
(%)
η
D
PL (PEP) (W)
Fig.2 Power gain and drain efficiency as functions
of peak envelope load power; typical values.
VDS= 26 V; IDQ= 400 mA; Th≤ 25 °C;
f
1
= 2000 MHz; f2= 2000.1 MHz.
handbook, halfpage
02040 80
15
5
MGS913
60
10
50
0
40
30
20
10
G
p
(dB)
G
p
η
D
(%)
η
D
PL (PEP) (W)
Fig.3 Power gain and drain efficiency as functions
of peak envelope load power; typical values.
VDS= 26 V; IDQ= 400 mA; Th≤ 25 °C;
f
1
= 2200 MHz; f2= 2200.1 MHz.
Page 5
1999 Dec 02 5
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047
handbook, halfpage
0 100
0
−60
−40
−20
MGS915
20 40 60 80
PL (PEP) (W)
d
im
(dBc)
d
7
d
5
d
3
VDS= 26 V; IDQ= 400 mA; Th≤ 25 °C;
f
1
= 2000 MHz; f2= 2000.1 MHz.
Fig.4 Intermodulation distortion as a function of
peak envelope load power; typical values.
handbook, halfpage
0 100
0
−60
−40
−20
MGS916
20 40 60 80
PL (PEP) (W)
d
im
(dBc)
d
7
d
5
d
3
VDS= 26 V; IDQ= 400 mA; Th≤ 25 °C;
f
1
= 2200 MHz; f2= 2200.1 MHz.
Fig.5 Intermodulation distortion as a function of
peak envelope load power; typical values.
handbook, halfpage
0 100
0
−60
−40
−20
MGS917
20 40 60 80
PL (PEP) (W)
d
3
(dBc)
(2) (3)(1)
Fig.6 Intermodulation distortion as a function of
peak envelope load power; typical values.
VDS= 26 V; Th≤ 25 °C; f1= 2200 MHz; f2= 2200.1 MHz.
(1) IDQ= 350 mA.
(2) IDQ= 400 mA.
(3) IDQ= 450 mA.
Page 6
1999 Dec 02 6
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047
handbook, halfpage
1.6
8
0
4
−4
1.8 2.6
MGS918
2 2.2 2.4
Z
i
(Ω)
f (GHz)
r
i
x
i
Fig.7 Input impedance as a function of frequency
(series components); typical values.
VDS= 26 V; IDQ= 400 mA; PL= 80 W; Th≤ 25 °C.
handbook, halfpage
1.6
8
0
4
−4
−8
1.8 2.6
MGS919
2 2.2 2.4
Z
L
(Ω)
f (GHz)
R
L
X
L
Fig.8 Load impedance as a function of frequency
(series components); typical values.
VDS= 26 V; IDQ= 400 mA; PL= 80 W; Th≤ 25 °C.
handbook, full pagewidth
MGS920
C7
C8
C3
L16
L14L12
L20
L1 L3
L2
L4
L6
L8
L10
L11
L15
L17
L13
L5 L7
L9
L18 L19
C6
C9
C4
C10
input
50 Ω
output
50 Ω
C1C2
C11 C12
R2
F1
C13 C14
V
DD
R1
C5
V
gate
Fig.9 Class-AB test circuit at f = 2.2 GHz.
Page 7
1999 Dec 02 7
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047
List of components (See Figs 9 and 10)
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (ε
r
= 2.2); thickness 0.79 mm.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C2, C6, C7 Tekelec variable capacitor; type 37281 0.4 to 2.5 pF
C3, C8 multilayer ceramic chip capacitor; note 1 12 pF
C4, C9 multilayer ceramic chip capacitor; note 2 12 pF
C5, C12 electrolytic capacitor 10 µF; 100 V 2222 037 59109
C10 multilayer ceramic chip capacitor; note 1 1 nF
C11 multilayer ceramic chip capacitor 100 nF 2222 581 16641
C13 tantal SMD capacitor 4.5 µF; 50 V
C14 electrolytic capacitor 100 µF; 63 V 2222 037 58101
F1 Ferroxcube chip-bead 8DS3/3/8/9-4S2 4330 030 36301
L1 stripline; note 3 50 Ω 2.9 × 2.4 mm
L2 stripline; note 3 14.5 Ω 4 × 11.7 mm
L3 stripline; note 3 50 Ω 3.7 × 2.4 mm
L4 stripline; note 3 6 Ω 2 × 30.8 mm
L5 stripline; note 3 50 Ω 3.6 × 2.4 mm
L6 stripline; note 3 9.5 Ω 3 × 18.8 mm
L7 stripline; note 3 50 Ω 7.8 × 2.4 mm
L8 stripline; note 3 9.8 Ω 4 × 18.3 mm
L9 stripline; note 3 24.4 Ω 5 × 6.3 mm
L10, L11 stripline; note 3 5.1 Ω 7 × 37 mm
L12 stripline; note 3 25.4 Ω 10.1 × 6mm
L13 stripline; note 3 5.7 Ω 2.4 × 32.8 mm
L14 stripline; note 3 25.4 Ω 7.4 × 6mm
L15 stripline; note 3 11.3 Ω 2.5 × 15.6 mm
L16 stripline; note 3 50 Ω 10.8 × 2.4 mm
L17 stripline; note 3 16.1 Ω 3 × 10.4 mm
L18 stripline; note 3 50 Ω 2.3 × 2.4 mm
L19 stripline; note 3 50 Ω 3 × 2.4 mm
L20 stripline; note 3 50 Ω 5.5 × 2.4 mm
R1, R2 metal film resistor 10 Ω, 0.6 W 2322 156 11009
Page 8
1999 Dec 02 8
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047
handbook, full pagewidth
BLF2047 INPUT
PH990109
BLF2047 OUTPUT
PH990110
MGS921
V
DD
V
GS
C5
C6
C7
C8
C9
C10
C11
C12
C13
C14
F1
R2
R1
C4
C3
C1
C2
BLF2047 INPUT
PH990109
BLF2047 OUTPUT
PH990110
50
95
50
Fig.10 Component layout for 2.2 GHz class-AB test circuit.
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr= 2.2), thickness 0.79 mm.
The other side is unetched and serves as a ground plane.
Page 9
1999 Dec 02 9
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
SOT502A
99-06-07
99-10-13
0 5 10 mm
scale
Flanged LDMOST package; 2 mounting holes; 2 leads SOT502A
p
L
A
F
b
D
U
2
H
Q
c
1
3
2
D
1
E
A
C
q
U
1
C
B
E
1
M M
w
2
UNIT
A
mm
Db
12.83
12.57
0.15
0.08
20.02
19.61
9.53
9.25
19.94
18.92
9.91
9.65
4.72
3.99
c
U
2
0.25 0.5127.94
qw
2
w
1
F
1.14
0.89
U
1
34.16
33.91
L
5.33
4.32
p
3.38
3.12
Q
1.70
1.45
EE
1
9.50
9.30
inches
0.505
0.495
0.006
0.003
0.788
0.772
D
1
19.96
19.66
0.786
0.774
0.375
0.364
0.785
0.745
0.390
0.380
0.186
0.157
0.01 0.021.100
0.045
0.035
1.345
1.335
0.210
0.170
0.133
0.123
0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
w
1
AB
M M M
Page 10
1999 Dec 02 10
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Page 11
1999 Dec 02 11
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047
NOTES
Page 12
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999
68
Philips Semiconductors – a w orldwide compan y
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Printed in The Netherlands 125002/04/pp12 Date of release: 1999 Dec 02 Document order number: 9397 750 06449
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