Datasheet BLF2047L,90 Datasheet (Philips)

Page 1
DATA SH EET
Product specification Supersedes data of 2000 Feb 17
2000 Mar 06
DISCRETE SEMICONDUCTORS
BLF2047L/90
UHF power LDMOS transistor
ook, halfpage
M3D379
Page 2
2000 Mar 06 2
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047L/90
FEATURES
High power gain
Easy power control
Excellent ruggedness
Source on underside eliminates DC isolators, reducing
common mode inductance
Designed for broadband operation (1.8 to 2.0 GHz)
Internal input and output matching for high gain and
efficiency.
APPLICATIONS
Common source class-AB operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange.
PINNING
PIN DESCRIPTION
1 drain 2 gate 3 source, connected to flange
handbook, halfpage
Top view
MBK394
1
2
3
Fig.1 Simplified outline SOT502A.
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
Two-tone, class-AB f
1
= 2000; f2= 2000.1 26 90 (PEP) >10.5 >30 ≤−25
SYMBOL PARAMETER MIN. MAX. UNIT
V
DS
drain-source voltage 65 V
V
GS
gate-source voltage −±15 V
I
D
DC drain current 12 A
T
stg
storage temperature 65 +150 °C
T
j
junction temperature 200 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
Page 3
2000 Mar 06 3
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047L/90
THERMAL CHARACTERISTICS
Note
1. Determined under specified RF operating conditions, based on maximum junction temperature.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
Note
1. The value of capacitance is that of the die only.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-h
thermal resistance from junction to heatsink Th=25°C; P
tot
= 92 W; note 1 0.81 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
drain-source breakdown voltage VGS= 0; ID= 2.1 mA 65 −−V
V
GSth
gate-source threshold voltage VDS= 10 V; ID= 210 mA 1.5 3.5 V
I
DSS
drain-source leakage current VGS= 0; VDS=26V −−15 µA
I
DSX
on-state drain current VGS=V
GSth
+9V; VDS=10V 27 −−A
I
GSS
gate leakage current VGS= ±15 V; VDS=0 −−38 nA
g
fs
forward transconductance VDS= 10 V; ID= 7.5 A 6.0 S
R
DSon
drain-source on-state resistance VGS=V
GSth
+9V; ID= 7.5 A 0.11 −Ω
C
rss
feedback capacitance VGS=0;VDS= 26 V; f = 1 MHz;
note 1
5.1 pF
Page 4
2000 Mar 06 4
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047L/90
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th=25°C; R
th j-h
= 0.81 K/W; unless otherwise specified.
Ruggedness in class-AB operation
The BLF2047L/90is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 26 V; IDQ= 525 mA; PL= 90 W; f = 2000 MHz (single tone).
MODE OF OPERATION
f
(MHz)
V
DS
(V)
I
DQ
(mA)
P
L
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
Two-tone, class-AB f
1
= 2000; f2= 2000.1 26 525 90 (PEP) >10.5 >30 ≤−25
handbook, halfpage
0
PL (PEP) (W)
G
p
(dB)
G
p
40 80 120
15
5
10
η
D
(%)
η
D
50
0
10
20
30
40
MCD933
Fig.2 Powergain and drainefficiency asfunctions
of peak envelope load power; typical values.
VDS= 26 V; IDQ= 525 mA; Th≤ 25 °C; f
1
= 2000 MHz; f2= 2000.1 MHz.
handbook, halfpage
0
PL (PEP) (W)
G
p
(dB)
40
(1)
(1)
(3)
(3)
80 120
15
5
10
η
D
(%)
50
0
10
20
30
40
MCD928
(2)
G
p
η
D
(2)
Fig.3 Powergain and drainefficiency asfunctions
of peak envelope load power; typical values.
VDS=26V;Th≤25 °C; f1= 2000 MHz;f2= 2000.1 MHz. (1) IDQ= 650 mA. (2) IDQ= 525 mA. (3) IDQ= 400 mA.
Page 5
2000 Mar 06 5
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047L/90
handbook, halfpage
0
PL (PEP) (W)
d
im
(dBc)
40
d
3
d
5
d
7
80 120
0
60
40
20
MCD929
VDS= 26 V; IDQ= 525 mA; Th≤ 25 °C; f
1
= 2000 MHz; f2= 2000.1 MHz.
Fig.4 Intermodulation distortion products as
functions of peak envelope load power; typical values.
handbook, halfpage
0
PL (PEP) (W)
d
3
(dBc)
40
(3)
(2)
(1)
80 120
0
60
40
20
MCD930
Fig.5 Third-order intermodulation distortion as a
function of peak envelope load power; typical values.
VDS= 26 V; Th≤ 25 °C; f1= 2000 MHz; f2= 2000.1 MHz. (1) IDQ= 400 mA. (2) IDQ= 525 mA. (3) IDQ= 650 mA.
handbook, halfpage
1.8 2 2.2
4
MGT004
2
0
2
4
Z
L
()
f (GHz)
X
L
R
L
Fig.6 Load impedanceas a functionof frequency
(series components); typical values.
VDS= 26 V; ID= 525 mA; PL= 90 W; Th≤ 25 °C.
handbook, halfpage
1.8 2 2.2
4
MGT003
2
0
2
Z
i
()
f (GHz)
x
i
r
i
6
Fig.7 Input impedanceas a functionof frequency
(series components); typical values.
VDS= 26 V; ID= 525 mA; PL= 90 W; Th≤ 25 °C.
Page 6
2000 Mar 06 6
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047L/90
handbook, halfpage
05 15
5
10
MCD931
PL (W)
G
p
(dB)
15
10
η
D
(%)
25
0
5
10
15
20
G
p
η
D
Fig.8 Powergain and drainefficiency asfunctions
of average load power; typical values.
VDS= 26 V; IDQ= 465 mA; Th≤ 25 °C; f = 1960 MHz; CDMA mode.
CDMA conditions
CHANNEL WALSH CODE
Pilot 0 Sync 32 Paging 1 Traffic 8 to 13
handbook, halfpage
80 05
(1) (2)
(3)
ACPR
(dB)
PL (W)
15
0
20
60
40
10
MCD932
Fig.9 Adjacent channel power reduction as a
function of average load power; typical values.
VDS= 26 V; IDQ= 465 mA; Th≤ 25 °C; f = 1960 MHz; CDMA mode. (1) Channel spacing/Bandwidth: 2.25 MHz/1 MHz. (2) Channel spacing/Bandwidth: 1.25 MHz/12.5 kHz. (3) Channel spacing/Bandwidth: 885 kHz/30 kHz.
CDMA conditions
CHANNEL WALSH CODE
Pilot 0 Sync 32 Paging 1 Traffic 8 to 13
Page 7
2000 Mar 06 7
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047L/90
handbook, full pagewidth
MGT005
C8
C9
C3
L16
L14L12
L20
L1 L3
L2
L4
L6
L8
L10
L11
L15
L17
L13
L5 L7
L9
L18
L19
C7
C10
C4
C11
input 50
output
50
C1C2
C14 C12
R2
F1
C15C6 C13
C16 C17
V
dc
R1
C5
V
gate
Fig.10 2 GHz class-AB test circuit.
Page 8
2000 Mar 06 8
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047L/90
List of components
See Figs 10 and 11.
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr= 2.2); thickness 0.79 mm.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C2, C7, C8 Tekelec variable capacitor; type 37271 0.6 to 4.5 pF C3, C9 multilayer ceramic chip capacitor; note 1 12 pF C4, C10 multilayer ceramic chip capacitor; note 2 12 pF C5, C12, C16 electrolytic capacitor 4.5 µF; 50 V C6, C11, C15 multilayer ceramic chip capacitor; note 1 1 nF C13, C17 electrolytic capacitor 100 µF; 63 V 2222 037 58101 C14 multilayer ceramic chip capacitor 100 nF 2222 581 16641 F1 Ferroxcube chip-bead 8DS3/3/8/9-4S2 4330 030 36301 L1 stripline; note 3 50 2.9 × 2.4 mm L2 10.8 4 × 16.3 mm L3 50 3.7 × 2.4 mm L4 6 2 × 30.8 mm L5 50 3.6 × 2.4 mm L6 9 3 × 19.9 mm L7 50 7.8 × 2.4 mm L8 18.5 4 × 8.8 mm L9 24.4 5 × 6.3 mm L10 5.1 7 × 37 mm L11 5.1 7 × 40.9 mm L12 25.4 10.1 × 6mm L13 5.7 2.4 × 32.8 mm L14 25.4 6.4 × 6mm L15 10 3.5 × 20.7 mm L16 50 10.8 × 2.4 mm L17 11.8 3 × 7.9 mm L18 50 2.3 × 2.4 mm L19 50 3 × 2.4 mm L20 50 5.5 × 2.4 mm R1, R2 metal film resistor 10 , 0.6 W 2322 156 11009
Page 9
2000 Mar 06 9
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047L/90
handbook, full pagewidth
BLF2047L
INPUT
PH990118
BLF2047L/90
OUTPUT
V
dd
V
gs
C5
C6
C7
C8
C9
C10
C11
C14C15
C12
C16
C13
C17
F1
R2
R1
C4
C3
C1
C2
BLF2047L
INPUT
PH990118
BLF2047L/90
OUTPUT
50
95
50
MCD927
Fig.11 Component layout for 2 GHz class-AB test circuit.
Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr= 2.2), thickness 0.79 mm.
The other side is unetched and serves as a ground plane.
Page 10
2000 Mar 06 10
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047L/90
PACKAGE OUTLINE
REFERENCES
OUTLINE VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
SOT502A
99-10-13 99-12-28
0 5 10 mm
scale
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
p
L
A
F
b
D
U
2
H
Q
c
1
3
2
D
1
E
A
C
q
U
1
C
B
E
1
M M
w
2
UNIT
A
mm
Db
12.83
12.57
0.15
0.08
20.02
19.61
9.53
9.25
19.94
18.92
9.91
9.65
4.72
3.99
c
U
2
0.25 0.5127.94
qw
2
w
1
F
1.14
0.89
U
1
34.16
33.91
L
5.33
4.32
p
3.38
3.12
Q
1.70
1.45
EE
1
9.50
9.30
inches
0.505
0.495
0.006
0.003
0.788
0.772
D
1
19.96
19.66
0.786
0.774
0.375
0.364
0.785
0.745
0.390
0.380
0.186
0.157
0.01 0.021.100
0.045
0.035
1.345
1.335
0.210
0.170
0.133
0.123
0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
w
1
AB
M MM
Page 11
2000 Mar 06 11
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF2047L/90
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in suchapplications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting valuesgiven are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Page 12
© Philips Electronics N.V. SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does notform part of any quotation or contract, isbelieved to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2000
69
Philips Semiconductors – a w orldwide compan y
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, ViaCasati, 23 - 20052 MONZA(MI), Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
Printed in The Netherlands 603516/02/pp12 Date of release:2000 Mar 06 Document order number: 9397750 06894
Loading...