Datasheet BLF2047L Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D379

BLF2047L

UHF power LDMOS transistor

Product specification
Supersedes data of 1999 Apr 01

1999 Dec 06

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2047L

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Source on underside eliminates DC isolators, reducing

common mode inductance

• Designed for broadband operation (1.8 to 2 GHz)

• Internal input and output matching for high gain and

efficiency.

APPLICATIONS

• Common source class-AB operation for PCN and PCS
applications in the 1800 to 2000 MHz frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS
transistors encapsulated in a 2-lead SOT502A flange
package with a ceramic cap. The common source is
connected to the mounting flange.

QUICK REFERENCE DATA

RF performance at Th=25°C in a common source test circuit.

PINNING

PIN DESCRIPTION

1 drain
2 gate
3 source, connected to flange

handbook, halfpage

Top view

1

2

Fig.1 Simplified outline SOT502A.

3

MBK394

MODE OF OPERATION

Two-tone, class-AB f

f

(MHz)

= 2000; f2= 2000.1 26 65 (PEP) >10.5 >30 ≤−25

1

V

(V)

DS

P

(W)

L

G

p

(dB)

η

(%)

D

d

(dBc)

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

DS

V

GS

I

D

T

stg

T

j

drain-source voltage − 65 V
gate-source voltage −±15 V
DC drain current − 9A
storage temperature −65 +150 °C
junction temperature − 200 °C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

im

1999 Dec 06 2

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2047L

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-h

thermal resistance from junction to
heatsink

Note

1. Determined under specified RF operating conditions.

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

C

rss

drain-source breakdown voltage VGS= 0; ID= 1.4 mA 65 −−V
gate-source threshold voltage VDS= 10 V; ID= 140 mA 1.5 − 3.5 V
drain-source leakage current VGS= 0; VDS=26V −−10 µA
on-state drain current VGS=V
gate leakage current VGS= ±15 V; VDS=0 −−250 nA
forward transconductance VDS= 10 V; ID=5A − 4 − S
drain-source on-state resistance VGS=V
feedback capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 3.4 − pF

Th=25°C, P

GS th

GS th

= 152 W, note 1 1.15 K/W

tot

+9V; VDS=10V 18 −−A

+9V; ID=5A − 0.17 −Ω

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. T

MODE OF OPERATION

Two-tone, class-AB f

= 2000; f2= 2000.1 26 350 65 (PEP) >10.5 >30 ≤−25

1

f

(MHz)

=25°C; R

h

V

DS

(V)

= 1.15 K/W, unless otherwise specified.

th j-h

I

DQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

D

d

im

(dBc)

Ruggedness in class-AB operation

The BLF2047L is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V

= 26 V; IDQ= 350 mA; PL= 65 W; f = 2000 MHz.

DS

1999 Dec 06 3

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2047L

15

handbook, halfpage

G

p

(dB)

10

5

0 100

f1= 2000 MHz; f2= 2000.1 MHz; VDS=26V;

= 350 mA; Th≤ 25 °C.

I

DQ

G

p

η

D

20 40 60 80

PL (PEP) (W)

Fig.2 Power gain and drain efficiency as a

function of load power; typical values.

MGS950

50

η

D

(%)

40

30

20

10

0

handbook, halfpage

0

d

im

(dBc)

−10

−20

−30

d

3

−40

−50

−60

f1= 2000 MHz; f2= 2000.1 MHz; VDS=26V;

= 350 mA; Th≤ 25 °C.

I

DQ

d

5

d

7

0 10020 40 60 80

PL (PEP) (W)

MGS951

Fig.3 Intermodulation distortion as a function of

load power; typical values.

2.2

MGS952

f (GHz)

handbook, halfpage

8

Z

i

(Ω)

6

x

4

2

0

−2

1.6 1.8 2 2.4

VDS= 26 V; ID= 350 mA; PL= 65 W; Th≤ 25 °C.

i

r

i

Fig.4 Inputimpedance as a function of frequency

(series components); typical values.

1999 Dec 06 4

2.2

MGS953

f (GHz)

handbook, halfpage

4

Z

L

(Ω)

2

0

−2

−4

−6

1.6 1.8 2 2.4

VDS= 26 V; ID= 350 mA; PL= 65 W; Th≤ 25 °C.

R

L

X

L

Fig.5 Loadimpedance as a function of frequency

(series components); typical values.

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2047L

handbook, full pagewidth

input
50 Ω

L20

C3

C4

L2

L1 L3

R1

L4

L6

L5 L7

C6

V

gate

C5

L10

L8

L9

C1C2

L11

Fig.6 Class-AB test circuit at f = 2 GHz.

L13

F1

C13

C15

C14 C12

C11

C10

L15

L14L12

L16

C7

L17

L18

C8

C9

R2

L19

C16 C17

output

50 Ω

MGS954

V

dd

1999 Dec 06 5

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2047L

List of components (see Figs. 6 and 7)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C2, C7 and C8 Tekelec variable capacitor; type 37271 0.6 to 4.5 pF
C3, C9 multilayerceramic chip capacitor; note 1 12 pF
C4, C10 multilayerceramic chip capacitor; note 2 12 pF
C5, C12 and C16 electrolytic capacitor 4.5 µF; 50 V
C6, C11 and C15 multilayerceramic chip capacitor; note 1 1 nF
C13 and C17 electrolytic capacitor 100 µF; 63 V 2222 037 58101
C14 multilayer ceramic chip capacitor 100 nF 2222 581 16641
F1 Ferroxcube chip-bead 8DS3/3/8/9-4S2 4330 030 36301
L1
L2 10.8 Ω 4 × 16.3 mm
L3 50 Ω 3.7 × 2.4 mm
L4 6 Ω 2 × 30.8 mm
L5 50 Ω 3.6 × 2.4 mm
L6 9 Ω 3 × 19.9 mm
L7 50 Ω 7.8 × 2.4 mm
L8 18.5 Ω 4 × 8.8 mm
L9 24.4 Ω 5 × 6.3 mm
L10 and L11 5.1 Ω 7 × 37 mm
L12 25.4 Ω 10.1 × 6mm
L13 5.7 Ω 2.4 × 32.8 mm
L14 25.4 Ω 6.4 × 6mm
L15 10 Ω 3.5 × 17.8 mm
L16 50 Ω 10.8 × 2.4 mm
L17 11.8 Ω 3 × 14.9 mm
L18 50 Ω 2.3 × 2.4 mm
L19 50 Ω 3 × 2.4 mm
L20 50 Ω 5.5 × 2.4 mm
R1 and R2 metal film resistor 10 Ω, 0.6 W 2322 156 11009

stripline; note 3

50 Ω 2.9 × 2.4 mm

Notes

1. American Technical Ceramics type 100B or capacitor of same quality.

2. American Technical Ceramics type 100A or capacitor of same quality.

3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr= 2.2); thickness 0.79 mm.

1999 Dec 06 6

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2047L

handbook, full pagewidth

50

BLF2047L INPUT

PH990118

V

GS

50

BLF2047L OUTPUT

PH990117

V

DD

95

C11

R2

F1

C13

C12

C7

C14C15

C9

C8

BLF2047L OUTPUT

PH990117

MGS955

C17

C16

C10

R1

C3

C6

C4

C5

C2

C1

BLF2047L INPUT

PH990118

Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr= 2.2), thickness 0.79 mm.

The other side is unetched and serves as a ground plane.

Fig.7 Component layout for 2 GHz class-AB test circuit.

1999 Dec 06 7

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2047L

PACKAGE OUTLINE

Flanged LDMOST package; 2 mounting holes; 2 leads SOT502A

D

A

3

D

1

U

1

q

1

H

U

2

A

2

b

w

M M

C

2

0 5 10 mm

scale

F

B

C

L

p

w

M M M

AB

1

c

E

1

Q

E

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

4.72

3.99

0.186

0.157

OUTLINE

VERSION

SOT502A

12.83

12.57

0.505

0.495

c

Db

20.02

19.61

0.788

0.772

19.96

19.66

0.786

0.774

0.15

0.08

0.006

0.003

IEC JEDEC EIAJ

D

1

EE

9.53

9.50

9.25

9.30

0.375

0.374

0.364

0.366

REFERENCES

1

0.045

0.035

F

H

19.94

1.14

18.92

0.89

0.785

0.745

1999 Dec 06 8

L

5.33

4.32

0.210

0.170

p

3.38

3.12

0.133

0.123

Q

1.70

1.45

0.067

0.057

qw

U

1

34.16

33.91

1.345

1.335

EUROPEAN

PROJECTION

w

U

2

9.91

9.65

0.390

0.380

0.25 0.5127.94

0.01 0.021.100

2

1

ISSUE DATE

99-06-07
99-10-13

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2047L

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Dec 06 9

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2047L

NOTES

1999 Dec 06 10

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2047L

NOTES

1999 Dec 06 11

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1999

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68

Printed in The Netherlands 125002/02/pp12 Date of release: 1999 Dec 06 Document order number: 9397 750 06452