Page 1
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D381
BLF2045
UHF power LDMOS transistor
Preliminary specification 1999 Jul 12
Page 2
Philips Semiconductors Preliminary specification
4
UHF power LDMOS transistor BLF2045
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on underside eliminates DC isolators, reducing
common mode inductance
• Designed for broadband operation.
APPLICATIONS
• Communication transmitter applications (PCN/PCS) in
the 1.8 to 2.2 GHz frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467A) with a ceramic cap. The common source is
connected to the mounting flange.
PINNING - SOT467A
PIN DESCRIPTION
1drain
2gate
3 source, connected to flange
1
2
Top view
Fig.1 Simplified outline.
3
MBK58
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
CW, class-AB (2-tone) f
=25°C in a common source test circuit.
h
f
(MHz)
= 2000; f2= 2000.1 26 30 (PEP) >10.5 >30 ≤−26
1
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
D
d
im
(dBc)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage − 65 V
gate-source voltage −±15 V
drain current (DC) − 4.5 A
storage temperature −65 150 °C
junction temperature − 200 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Jul 12 2
Page 3
Philips Semiconductors Preliminary specification
Fig.2 Input, output and feedback capacitance as
functions of drain-source voltage, typical values.
VGS=0; f=1MHz.
UHF power LDMOS transistor BLF2045
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-h
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
is
C
os
C
rs
thermal resistance from junction to heatsink P
=97W; Th=25°C1.8 K/W
tot
drain-source breakdown voltage VGS=0; ID=0.7mA 65 −−V
gate-source threshold voltage VDS=10V; ID=70mA 1.5 − 3.5 V
drain-source leakage current VGS=0; VDS=26V −−5 µA
drain cut-off current VGS=V
+9V; VDS=10V 9 −−A
GSth
gate leakage current VGS= ±15 V; VDS=0 −−125 nA
forward transconductance VDS=10V; ID=2.5A − 2 − S
drain-source on-state resistance VGS=V
+9V; ID=2.5A − 340 − mΩ
GSth
input capacitance VGS=0; VDS=26V; f=1MHz − 38 − pF
output capacitance VGS=0; VDS=26V; f=1MHz − 31 − pF
feedback capacitance VGS=0; VDS=26V; f=1MHz − 1.7 − pF
(pF)
1999 Jul 12 3
100
C
C
oss
C
iis
C
rss
10
1
0 102030
(V)
V
DS
Page 4
Philips Semiconductors Preliminary specification
Fig.3 Power gain and efficiency as a functions of
peak envelope load power, typical values.
Class-AB operation; VDS=26V; IDQ=180mA;
f
1
=2000MHz; f2= 2000.1 MHz.
UHF power LDMOS transistor BLF2045
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
=25°C; R
h
= 0.4 K/W, unless otherwise specified.
th mb-h
MODE OF OPERATION
CW, class-AB (2-tone) f
f
(MHz)
= 2000; f2= 2000.1 26 30 (PEP) >10.5 >30 ≤−26
1
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
D
d
im
(dBc)
Ruggedness in class-AB operation
The BLF2045 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
=26V; PL= 30 W (CW); f = 2000 MHz.
DS
15
G
P
(dB)
10
5
0 1020304050
1999 Jul 12 4
50
η
G
P
η
D
P
(PEP) (W)
L
D
(%)
40
30
20
10
0
Page 5
Philips Semiconductors Preliminary specification
VDS=26V; IDQ= 180 mA; T
h
≤ 25 °C;
f
1
=2000MHz; f2= 2000.1 MHz..
Fig.4 Intermodulation distortion as a function of
peak envelope load power; typical values.
Fig.6 Input impedance as a function of frequency
(series components); typical values.
VDS=26V; IDQ= 180 mA; PL=45W; T
h
≤ 25 °C.
UHF power LDMOS transistor BLF2045
0
d
im
(dBc)
-10
-20
-30
-40
-50
-60
0 1020304050
P
(PEP) (W)
L
0
d
3
(dBc)
-10
d
3
-20
-30
d
5
d
7
-40
-50
(1)
(2)
(3)
-60
0 1020304050
(1) IDQ= 140mA (2) IDQ= 180mA (3) IDQ= 220mA
=26V;T
V
DS
=2000MHz; f2= 2000.1 MHz..
f
1
≤ 25 °C;
h
P
(PEP) (W)
L
Fig.5 Intermodulation distortion as a function of
peak envelope load power; typical values.
5
Z
i
(Ω)
4
3
2
1
0
1.8 2 2.2
1999 Jul 12 5
4
Z
L
(Ω)
2
x
i
0
R
L
-2
X
r
i
L
-4
1.8 2 2.2
f (GHz)
VDS=26V; IDQ= 180 mA; PL=45W; T
≤ 25 °C.
h
f (GHz)
Fig.7 Load impedance as a function of frequency
(series components); typical values.
Page 6
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF2045
Output
50 Ohm
L1
C1
L2
C3
L3
C2
L4
L5
R1
Vgate
C6
C5
L6
C4
L7
L8
Fig.8 Testcircuit for 2 GHz.
L9
L12
L10
L11
C7
L13
C11
L14
C10
L15
C8
C9
C12
C13
L16
C14
F1
R2
Output
50 Ohm
C15
Vdd
C16
1999 Jul 12 6
Page 7
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF2045
List of components
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C2, C4, C7, C8Tekelec variable capacitor; type 37281 0.4 to 2.5 pF
C3 multilayer ceramic chip capacitor; note 1 2.4 pF
C1, C5, C9,
C10
C11 multilayer ceramic chip capacitor; note 2 1 nF
C12 multilayer ceramic chip capacitor 100 nF 2222 581 16641
C6, C13, C14,
C15
C16 electrolytic capacitor 100 µF; 63 V 2222 037 58101
F1 Ferroxcube chip-bead 8DS3/3/8/9-4S2 4330 030 36301
L1 stripline; note 3 50 Ω 13 × 0.9 mm
L2 stripline; note 3 50 Ω 2 × 0.9 mm
L3 stripline; note 3 34.3 Ω 15 × 1.7 mm
L4, L12 stripline; note 3 50 Ω 37 × 0.9 mm
L5 stripline; note 3 34.3 Ω 6 × 1.7 mm
L6 stripline; note 3 23.6 Ω 13 × 2.9 mm
L7 stripline; note 3 5.6 Ω 6 × 15.8 mm
L8 stripline; note 3 3.5 Ω 6 × 26 mm
L9 stripline; note 3 31.9 Ω 12 × 1.9 mm
L10 stripline; note 3 24.9 Ω 7.4 × 2.7 mm
L11 stripline; note 3 50 Ω 3x0.9mm
L13 stripline; note 3 50 Ω 4.15 × 0.9 mm
L14 stripline; note 3 26.3 Ω 2.5 × 2.5 mm
L15 stripline; note 3 50 Ω 2.8 × 0.9 mm
L16 stripline; note 3 50 Ω 14 × 0.9 mm
R1, R2 metal film resistor 10 Ω, 0.6 W 2322 156 11009
multilayer ceramic chip capacitor; note 1 11 pF
tantal SMD capacitor 4.5 µF; 50 V
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 100B or capacitor of same quality.
3. The striplines are on a double copper-clad PCB with Teflon dielectric (ε
1999 Jul 12 7
= 6.15); thickness 0.64 mm.
r
Page 8
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF2045
60
R1
C6
BLF2045 INPUT
50
C5
C2
C1
C3
C4
C16
BLF2045 OUTPUT
50
C15
F1
R2
C14
C7
C10
C9
C8
C13
60
C11
C12
BLF2045 INPUT
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (
The other side is unetched and serves as a ground plane.
Fig.9 Component layout for 2 GHz class-AB test circuit.
1999 Jul 12 8
BLF2045 OUTPUT
ε
= 6.15), thickness 0.64 mm.
r
Page 9
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF2045
PACKAGE OUTLINE
Flanged LDMOST package; 2 mounting holes; 2 leads
D
A
3
D
1
U
1
q
1
L
H
U
2
SOT467A
Package under
development
Philips Semiconductors reserves the
right to make changes without notice.
F
B
C
c
E
1
E
A
p
w
M M M
1
AB
2
w
M M
scale
18.29
17.27
0.72
0.68
C
2
Q
3.43
6.22
5.71
0.135
0.125
3.18
0.245
0.225
2.21
1.96
0.087
0.077
14.27
0.562
b
0 5 10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
4.67
mm
3.94
0.220
0.184
inch
OUTLINE
VERSION
SOT467A 99-03-31
0.155
0.210
b
5.59
5.33
cD
0.15
0.10
0.006
0.004
IEC JEDEC EIAJ
9.25
9.04
0.364
0.356
D
9.27
9.02
0.365
0.355
E
5.92
5.77
0.233
0.227
E
1
1.65
5.97
1.40
5.72
0.065
0.235
0.055
0.225
REFERENCES
1
FH Lp q
Q
U
U
2
1
20.45
5.97
20.19
5.72
0.805
0.235
0.795
0.225
EUROPEAN
PROJECTION
w
0.25
0.010 0.020
w
1
2
0.51
ISSUE DATE
1999 Jul 12 9
Page 10
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF2045
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jul 12 10
Page 11
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel.+4940235360,Fax.+494023536300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Developmen t Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel.+4722748000,Fax.+4722748341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V.
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
1999
Internet: http://www.semiconductors.philips.com
SCA
67
Printed in The Netherlands budgetnum/printrun/ed/pp11 Date of release: 1999 Jul 12 Do cument orde r number: 9397 750 05497
Loading...