Datasheet BLF2043 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D438

BLF2043

UHF power LDMOS transistor

Objective specification

1999 Mar 18

Philips Semiconductors Objective specification

UHF power LDMOS transistor BLF2043

FEATURES

• High power gain

• Easy power control

• Excellent ruggednes s

• Source on mounting base eliminates DC isolators,

reducing common mode inductance

• Designed for broadband operation (HF to 2.2 GHz).

APPLICATIONS

• Communication transmitter applications in the UHF
frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flangless package
(SOT538A) with a ceramic cap. The common source is
connected to the mounting base.

QUICK REFERENCE DATA

RF performance at T

=25°C in a common source test circuit.

h

PINNING - SOT538A

PIN DESCRIPTION

1 drain
2 gate
3 source

handbook, halfpage

Top view

1

2

Fig.1 Simplified outline.

3

MBK905

MODE OF OPERATION

CW, class-AB (2-tone)

CW, class-AB (1-tone)

f

(MHz)

= 2000; f2= 2000.1 26 10 (PEP) >12 >30 ≤−30

f

1

f

= 2200; f2= 2200.1 26 10 (PEP) >11 >30 ≤−30

1

V

(V)

DS

P

(W)

L

2000 26 10 >11 >40 −
2200 26 10 >10 >40 −

G

(dB)

p

η

D

(%)

d

im

(dBc)

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

drain-source voltage − 65 V
gate-source voltage −±15 V
drain current (DC) − 2.2 A
total power dissipation Tmb≤ 25 °C − tbf W
storage temperature −65 150 °C
junction temperature − 200 °C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

1999 Mar 18 2

Philips Semiconductors Objective specification

UHF power LDMOS transistor BLF2043

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

Note

1. Thermal resistance is determined under RF operating conditions.

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

C

is

C

os

C

rs

thermal resistance from junction to mounting base Tmb=25°C, note 1 5 K/W
thermal resistance from mounting base to heatsink 0.4 K/W

drain-source breakdown voltage VGS= 0; ID=0.2mA 65 −−V
gate-source threshold voltage VDS=10V; ID=20mA 2 − 5V
drain-source leakage current VGS= 0; VDS=26V −−0.1 mA
on-state drain current VGS=V

+9V; VDS=10V 3 −−A

GS(th)

gate leakage current VGS= ±15 V; VDS=0 −−1 µA
forward transconductance VDS=10V; ID=0.75A − 0.5 − S
drain-source on-state resistance VGS=10V; ID= 0.75 A − 1.2 −Ω
input capacitance VGS= 0; VDS=26V; f=1MHz − 11 − pF
output capacitance VGS= 0; VDS=26V; f=1MHz − 9 − pF
feedback capacitance VGS= 0; VDS=26V; f=1MHz − 0.6 − pF

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. T

MODE OF OPERATION

CW, class-AB (2-tone)

CW, class-AB (1-tone)

f

(MHz)

f

= 2000;

1

f

= 2000.1

2

f

= 2200;

1

f

= 2200.1

2

2000 262510>11>40−
2200 262510>10>40−

V

=25°C; R

h

DS

(V)

I

DQ

(mA)

26 25 10 (PEP) >12 >30 ≤−30

26 25 10 (PEP) >11 >30 ≤−30

= 0.4 K/W, unless otherwise specified.

th mb- h

P

(W)

L

G

(dB)

p

η

(%)

D

d

im

(dBc)

Ruggedness in class-AB operation

The BLF2043 is capable of with standing a load mis match correspond ing to VSWR = 10 : 1 through all phases under the
following conditions: V

= 26 V; f = 2000 MHz at rated load power.

DS

1999 Mar 18 3

Philips Semiconductors Objective specification

UHF power LDMOS transistor BLF2043

PACKAGE OUTLINE

Ceramic surface mounted package; 2 leads SOT538A

D

A

3

D

1

D

2

1

B

c

L

H

2

w

b

PROPOSAL

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

mm

A

2.95

2.29

0.116

0.090

1.35

1.19

0.053

0.047

0.23

0.18

0.009

0.007

5.16

5.00

0.203

0.197

D

1

4.65

4.50

0.183

0.177

UNIT cbD

inches

M M

B

1

0 2.5 5 mm

scale

D

2

5.41

5.00

0.213

0.197

0.163

0.157

E

4.14

3.99

E

1

3.63

3.48

0.143

0.137

E

2

4.14

3.99

0.163

0.157

0.295

0.285

E2E

1

HLQ

7.49

2.03

1.27

0.080

0.050

0.10

0.00

0.004

0.000

7.24

α

Q

98-10-23

α

w

1

0.25

0.010

7°
0°

7°
0°

E

OUTLINE
VERSION

SOT538A

REFERENCES

IEC JEDEC EIAJ

EUROPEAN

PROJECTION

ISSUE DATE

1999 Mar 18 4

Philips Semiconductors Objective specification

UHF power LDMOS transistor BLF2043

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such a pplic ations do so at thei r own risk a nd agree t o fully indemnify Ph ilip s for any da mages resulting from such
improper use or sale.

1999 Mar 18 5

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© Philips Electronics N.V. 1999 SCA63
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Printed in The Netherlands budgetnum/printrun/ed/pp6 Date of release: 1999 Mar 18 Document order number: 9397 750 05496