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查询BLF1822-10供应商查询BLF1822-10供应商
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D381
BLF1822-10
UHF power LDMOS transistor
Product specification
Supersedes data of 2002 Mar 12
2003 Feb 10
Page 2
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1822-10
FEATURES
• Typical 2-tone performance at a supply voltage of 26 V
and IDQ of 85 mA:
– Output power = 10 W (PEP)
– Gain = 18.5 dB at 900 MHz, 13.5 dB at 2200 MHz
– Efficiency = 39% at 900 MHz, 34% at 2200 MHz
– dim = −31 dBc at 900 MHz, −28 dBc at 2200 MHz
• Easy power control
• Excellent ruggedness
• High power gain
• Excellent thermal stability
• Designed for broadband operation (HF to 2200 MHz)
• No internal matching for broadband operation.
APPLICATIONS
• RF power amplifiers for GSM, EDGE, CDMA and
W-CDMA base stations and multicarrier applications in
the HF to 2200 MHz frequency range
• Broadcast drivers.
PINNING - SOT467C
PIN DESCRIPTION
1 drain
2 gate
3 source, connected to flange
Top view
1
3
2
MBK584
DESCRIPTION
Fig.1 Simplified outline.
10 W LDMOS power transistor for base station
applications at frequencies from HF to 2200 MHz.
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit.
MODE OF
OPERATION
CW, class-AB (2-tone)
f
(MHz)
= 2200; f2= 2200.1 26 85 10 (PEP) >11; typ. 13.5 >30; typ. 34 ≤−26; typ. −28
f
1
f
= 960; f2= 960.1 26 85 10 (PEP) typ. 18.5 typ. 39 typ. −33
1
V
(V)
DS
I
DQ
(mA)
P
(W)
L
G
p
(dB)
η
(%)
D
d
im
(dBc)
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Feb 10 2
Page 3
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1822-10
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
DS
V
GS
I
D
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
Note
1. Thermal resistance is determined under RF operating conditions.
drain-source voltage − 65 V
gate-source voltage −±15 V
drain current (DC) − 2.2 A
storage temperature −65 +150 °C
junction temperature − 200 °C
thermal resistance from junction to mounting base Tmb=25°C; note 1 5 K/W
thermal resistance from mounting base to heatsink 0.5 K/W
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
is
C
os
C
rs
drain-source breakdown voltage VGS= 0; ID= 0.2 mA 65 −−V
gate-source threshold voltage VDS= 10 V; ID=20mA 4 − 5V
drain-source leakage current VGS= 0; VDS=26V −−1.5 µA
on-state drain current VGS=V
+9V; VDS=10V 2.8 −−A
GSth
gate leakage current VGS= ±15 V; VDS=0 −−40 nA
forward transconductance VDS= 10 V; ID= 0.75 A − 0.5 − S
drain-source on-state resistance VGS= 10 V; ID= 0.75 A − 1.2 −Ω
input capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 13 − pF
output capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 11 − pF
feedback capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 0.5 − pF
2003 Feb 10 3
Page 4
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1822-10
APPLICATION INFORMATION 2.2 GHz
RF performance in a common source class-AB circuit. Th=25°C; R
= 0.4 K/W; unless otherwise specified.
th mb-h
MODE OF OPERATION
CW, class-AB (2-tone) f
f
(MHz)
= 2200; f2= 2200.1 26 85 10 (PEP) >11 >30 ≤−26
1
V
(V)
DS
I
DQ
(mA)
P
(W)
L
G
p
(dB)
η
(%)
D
d
im
(dBc)
Ruggedness in class-AB operation
The BLF1822-10 iscapable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
2
10
handbook, halfpage
C
(pF)
C
os
C
is
10
C
rs
1
= 26 V; f = 2200 MHz at rated load power.
DS
MGW642
handbook, halfpage
G
(dB)
MGW643
15
G
p
10
5
p
η
D
60
40
20
η
(%)
D
−1
10
0 102030
VGS= 0; f = 1 MHz.
VDS (V)
Fig.2 Input, output and feedback capacitance as
functions of drain-source voltage; typical
values.
0
0841216
VDS= 26 V; IDQ= 85 mA; Th≤ 25 °C;
= 2000 MHz; f2= 2000.1 MHz.
f
1
P
(PEP) (W)
L
0
Fig.3 Power gain and efficiency as functions of
peak envelope load power; typical values.
2003 Feb 10 4
Page 5
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1822-10
handbook, halfpage
0
d
im
(dBc)
−20
−40
−60
−80
08412
VDS= 26 V; IDQ= 85 mA; Th≤ 25 °C;
= 2000 MHz; f2= 2000.1 MHz.
f
1
d
3
d
5
d
7
PL (PEP) (W)
MGW644
Fig.4 Intermodulation distortion as a function of
peak envelope load power; typical values.
MGW645
15
handbook, halfpage
G
p
(dB)
10
5
16
0
0841216
VDS= 26 V; IDQ= 85 mA;
= 2200 MHz; f2= 2200.1 MHz.
f
1
G
p
η
D
P
(PEP) (W)
L
60
40
20
0
η
(%)
D
Fig.5 Power gain and efficiency as functions of
peak envelope load power; typical values.
handbook, halfpage
0
d
im
(dBc)
−20
−40
−60
−80
08412
VDS= 26 V; IDQ= 85 mA; Th≤ 25 °C;
= 2200 MHz; f2= 2200.1 MHz.
f
1
d
3
d
5
d
7
PL (PEP) (W)
MGW646
Fig.6 Intermodulation distortion as a function of
peak envelope load power; typical values.
handbook, halfpage
16
0
d
3
(dBc)
−20
−40
−60
0841216
VDS= 26 V; Th≤ 25 °C;
= 2200 MHz; f2= 2200.1 MHz.
f
1
= 115 mA. (2) IDQ= 55 mA. (3) IDQ=85mA.
(1) I
DQ
(1)
(2)
(3)
P
L
MGW647
(PEP) (W)
Fig.7 Intermodulation distortion as a function of
peak envelope load power; typical values.
2003 Feb 10 5
Page 6
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1822-10
handbook, halfpage
8
Z
i
(Ω)
6
4
x
i
2
r
i
0
1.8 1.9 2.0 2.1 2.2
VDS= 26 V; IDQ= 85 mA; PL= 10 W; Th≤ 25 °C.
Impedance measured at reference planes.
MGW648
f (GHz)
Fig.8 Input impedance as a function of frequency
(series components); typical values.
R
L
X
L
f (GHz)
MGW649
handbook, halfpage
6
Z
L
(Ω)
4
2
0
−2
−4
−6
1.8 1.9 2.0 2.1 2.2
VDS= 26 V; IDQ= 85 mA; PL= 10 W; Th≤ 25 °C.
Impedance measured at reference planes.
Fig.9 Load impedance as a function of frequency
(series components); typical values.
handbook, full pagewidth
V
gate
C6
C5
L4
L5
50 Ω
input
C1
R1
L3L2L1
C2
C4C3
Fig.10 Class-AB test circuit for 2.2 GHz.
2003 Feb 10 6
C7
L10
C11 C12
L9
L7
L6
C8
C9
C18 C19 C20
C13 C14 C15 C16
50 Ω
output
L8
C10
MGW650
V
DD
C17
Page 7
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1822-10
List of components (see Figs 10 and 11)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C2, C10, C11 multilayerceramic chip capacitor; note 1 6.8 pF
C3, C4, C7, C9 Tekelec variable capacitor; type 37271 0.6 to 4.5 pF
C5 multilayer ceramic chip capacitor; note 1 2.4 pF
C6, C18 tantalum SMD capacitor 10 µF; 35 V
C8 multilayer ceramic chip capacitor; note 1 1.5 pF
C12, C20 multilayerceramic chip capacitor; note 2 1 nF
C13 multilayer ceramic chip capacitor; note 1 10 pF
C14 multilayer ceramic chip capacitor; note 1 51 pF
C15 multilayer ceramic chip capacitor; note 1 120 pF
C16 multilayer ceramic chip capacitor 100 nF 2222 581 16641
C17 electrolytic capacitor 47 µF; 35 V 2222 036 90094
C19 electrolytic capacitor 100 µF; 63 V 2222 037 58101
L1, L8 stripline; note 3 50 Ω 4 × 1.5 mm
L2 stripline; note 3 50 Ω 7 × 1.5 mm
L3 stripline; note 3 58.1 Ω 12 × 1.2 mm
L4 stripline; note 3 11.3 Ω 9 × 10 mm
L5 stripline; note 3 11.3 Ω 11.5 × 10 mm
L6 stripline; note 3 52.8 Ω 11 × 1.4 mm
L7 stripline; note 3 50 Ω 5.5 × 1.5 mm
L9 stripline; note 3 64.7 Ω 38 × 1mm
L10 2 turns enamelled 0.5 mm copper wire int. dia. = 3 mm;
length = 3 mm
R1 metal film resistor 390 Ω; 0.6 W 2322 156 11009
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 100B or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board with Rogers 5880 dielectric (εr= 2.2);
thickness 0.51 mm.
2003 Feb 10 7
Page 8
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1822-10
handbook, full pagewidth
C6
V
gate
C5
C1
C2
R3
C3
C4
BLF1822-10 2.2 GHz input
C18
C7
C20
C19
C8
V
DD
C11
C9
C17
L10
C12
C10
C13
C14
BLF1822-10 2.2 GHz output
C15
C16
60
BLF1822-10 2.2 GHz input
33
Dimensions in mm.
The components aresituatedon one side of the copper-clad printed-circuit board with Teflondielectric(εr= 2.2), thickness 0.51 mm.
The other side is unetched and serves as a ground plane.
BLF1822-10 2.2 GHz output
33
MGW651
Fig.11 Component layout for 2.2 GHz class-AB test circuit.
2003 Feb 10 8
60
Page 9
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1822-10
APPLICATION INFORMATION 960 MHz
RF performance in a common source class-AB circuit. Th=25°C; R
= 0.4 K/W; unless otherwise specified.
th mb-h
MODE OF OPERATION
CW, class-AB (2-tone) f
f
(MHz)
= 960; f2= 960.1 26 85 10 (PEP) typ. 18.5 typ. 39 typ. −33
1
V
(V)
DS
I
DQ
(mA)
P
(W)
L
G
p
(dB)
η
(%)
D
d
im
(dBc)
Ruggedness in class-AB operation
The BLF1822-10 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
24
handbook, halfpage
G
p
(dB)
20
16
12
8
4
G
p
= 26 V; f = 960 MHz at rated load power.
DS
MGW652
60
η
D
(%)
50
η
D
40
30
20
10
handbook, halfpage
d
im
(dBc)
−20
−40
−60
0
MGW653
d
3
d
5
d
7
0
084 121620
VDS= 26 V; IDQ= 85 mA; Th≤ 25 °C;
= 960 MHz; f2= 960.1 MHz.
f
1
P
(PEP) (W)
L
0
Fig.12 Power gain and efficiency as functions of
peak envelope load power; typical values.
−80
084 121620
VDS= 26 V; IDQ= 85 mA; Th≤ 25 °C;
= 960 MHz; f2= 960.1 MHz.
f
1
P
(PEP) (W)
L
Fig.13 Intermodulation distortion as a function of
peak envelope load power; typical values.
2003 Feb 10 9
Page 10
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1822-10
handbook, halfpage
4
Z
i
(Ω)
0
−4
−8
−12
800 900 1000 1100 1200
VDS= 26 V; IDQ= 85 mA; PL= 10 W; Th≤ 25 °C.
Impedance measured at reference planes.
r
i
x
i
MGW654
f (MHz)
Fig.14 Input impedance as a function of frequency
(series components); typical values.
10
handbook, halfpage
Z
L
(Ω)
8
6
4
2
0
800 900 1000 1100 1200
VDS= 26 V; IDQ= 85 mA; PL= 10 W; Th≤ 25 °C.
Impedance measured at reference planes.
R
L
X
L
MGW655
f (MHz)
Fig.15 Load impedance as a function of frequency
(series components); typical values.
handbook, full pagewidth
V
50 Ω
input
L1
gate
C19 C18 C17
C1
R2
R1
C16
L2
C2
L4
L3
L5
L6
C4 C3
L10
Fig.16 Class-AB test circuit for 960 MHz.
2003 Feb 10 10
V
L12
L11
L8
L7
C5
C6 C7
C15 C14 C13
C9 C10 C11 C12
50 Ω
C8
output
L9
MGW656
DD
Page 11
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1822-10
List of components (see Figs 16 and 17)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1 multilayer ceramic chip capacitor; note 1 82 pF
C2, C6 Tekelec variable capacitor; type 27291 0.8 to 8 pF
C3 multilayer ceramic chip capacitor; note 1 0.3 pF
C4, C5 Tekelec variable capacitor; type 27271 0.6 to 4.5 pF
C7 multilayer ceramic chip capacitor; note 1 2.1 pF
C8 multilayer ceramic chip capacitor; note 2 56 pF
C19, C14, C19 multilayer ceramic chip capacitor 100 pF size 0805
C10, C17 multilayer ceramic chip capacitor 1 nF size 0805
C12, C14, C19 tantalum SMD capacitor 6.8 µF
C13 multilayer ceramic chip capacitor 100 nF 2222 581 16641
C15 electrolytic capacitor 100 µF; 63 V 2222 037 58101
C16 multilayer ceramic chip capacitor; note 1 68 pF
L1 stripline; note 3 50 Ω 7.5 × 1.57 mm
L2 stripline; note 3 50 Ω 34.5 × 1.57 mm
L3 stripline; note 3 19.2 Ω 7 × 6mm
L4 stripline; note 3 50 Ω 11 × 1.57 mm
L5 stripline; note 3 50 Ω 9.5 × 1.57 mm
L6 stripline; note 3 24.5 Ω 2.2 × 4.4 mm
L7 stripline; note 3 19.2 Ω 13 × 6mm
L8 stripline; note 3 50 Ω 27.5 × 1.57 mm
L9 stripline; note 3 50 Ω 8 × 1.57 mm
L10 stripline; note 2 64.4 Ω 6.4 × 1mm
L11 stripline; note 3 64.4 Ω 38 × 1mm
L12 3 turns enamelled 0.5 mm copper wire int. dia. = 4 mm
length = 5 mm
R1 resistor 51 Ω, 0.25 W size 1206
R2 resistor 1 kΩ, 0.25 W size 1206
Notes
1. American Technical Ceramics type 500A or capacitor of same quality.
2. American Technical Ceramics type 100B or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board with Rogers 4350 dielectric (εr= 3.81); thickness
0.76 mm.
2003 Feb 10 11
Page 12
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1822-10
handbook, full pagewidth
C19
C18
R2
C1
V
gate
BLF1822-10 960 MHz input
C2
C17
C3
R1
C16
C4
C14
C15
V
DD
C5
C13
C7
C6
BLF1822-10 960 MHz output
C12
C11
L12
C10C9
C8
60
BLF1822-10 960 MHz input
50
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Rogers 4350 dielectric (εr= 3.81), thickness 0.76 mm.
The other side is unetched and serves as a ground plane.
BLF1822-10 960 MHz output
50
MGW657
Fig.17 Component layout for 960 MHz class-AB test circuit.
2003 Feb 10 12
60
Page 13
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1822-10
PACKAGE OUTLINE
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
D
A
3
D
1
F
SOT467C
U
q
1
B
C
c
1
E
H
U
2
A
p
w
M M M
AB
1
1
E
2
w
M M
scale
C
2
b
0 5 10 mm
Q
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
inch
OUTLINE
VERSION
SOT467C
A
4.67
3.94
0.184
0.155
b
5.59
5.33
0.220
0.210
cD
0.15
0.10
0.006
0.004
IEC JEDEC EIAJ
9.25
9.04
0.364
0.356
D
9.27
9.02
0.365
0.355
E
1
5.92
5.77
0.233
0.235
0.227
0.225
REFERENCES
FH p q
E
1
5.97
1.65
1.40
0.065
0.055
18.54
17.02
0.73
0.67
5.72
2003 Feb 10 13
3.43
3.18
0.135
0.125
Q
2.21
1.96
0.087
0.077
14.27
0.562
U
20.45
20.19
0.805
0.795
1
U
w
2
5.97
0.25
5.72
0.235
0.010 0.020
0.225
EUROPEAN
PROJECTION
w
1
2
0.51
ISSUE DATE
99-12-06
99-12-28
Page 14
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1822-10
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS
(1)
PRODUCT
STATUS
(2)(3)
DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determinesthe data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limitingvalues given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseor at any other conditions abovethosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected toresult in personalinjury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2003 Feb 10 14
Page 15
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1822-10
NOTES
2003 Feb 10 15
Page 16
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613524/04/pp16 Date of release: 2003 Feb 10 Document order number: 9397750 10914
SCA75
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