Datasheet BLF177 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLF177

HF/VHF power MOS transistor

Product specification
File under Discrete Semiconductors, SC08a

September 1992

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

FEATURES

• High power gain

• Low intermodulation distortion

• Easy power control

• Good thermal stability

• Withstands full load mismatch.

DESCRIPTION

Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for industrial and military
applications in the HF/VHF frequency
range.

The transistor is encapsulated in a
4-lead, SOT121 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.

A marking code, showing gate-source
voltage (V

) information is provided

GS

for matched pair applications. Refer
to the 'General' section for further
information.

PIN CONFIGURATION

ndbook, halfpage

14

g

MBB072

32

MLA876

d

s

Fig.1 Simplified outline and symbol.

CAUTION

The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.

WARNING

PINNING - SOT121

PIN DESCRIPTION

1 drain
2 source
3 gate
4 source

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at T

MODE OF

OPERATION

= 25 °C in a common source test circuit.

h

f

(MHz)

V

(V)

DS

P

(W)

L

G

P

(dB)

η

(%)

D

d

3

(dB)

d

5

(dB)

SSB class-AB 28 50 150 (PEP) > 20 > 35 <−30 <−30
CW class-B 108 50 150 typ. 19 typ. 70 −−

September 1992 2

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

±V

GS

I

D

P

tot

T

stg

T

j

THERMAL RESISTANCE

SYMBOL PARAMETER THERMAL RESISTANCE

R

th j-mb

R

th mb-h

drain-source voltage − 110 V
gate-source voltage − 20 V
DC drain current − 16 A
total power dissipation up to Tmb = 25 °C − 220 W
storage temperature −65 150 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base max. 0.8 K/W
thermal resistance from mounting base to heatsink max. 0.2 K/W

2

10

handbook, halfpage

I

D

(A)

10

(1) (2)

1

−1

10

110

(1) Current is this area may be limited by R
(2) Tmb = 25 °C.

Fig.2 DC SOAR.

2

10

V

DS(on)

DS

.

MRA906

(V)

300

handbook, halfpage

P

tot

(W)

200

100

3

10

0

0

(1) Short-time operation during mismatch.
(2) Continuous operation.

50

(1)

(2)

100 150

MGP089

Th (°C)

Fig.3 Power/temperature derating curves.

September 1992 3

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

∆V

GS

g

fs

R

DS(on)

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage ID = 50 mA; VGS = 0 110 −−V
drain-source leakage current VGS = 0; VDS = 50 V −−2.5 mA
gate-source leakage current ±VGS = 20 V; VDS = 0 −−1µA
gate-source threshold voltage ID = 50 mA; VDS = 10 V 2 − 4.5 V
gate-source voltage difference of

ID = 50 mA; VDS = 10 V −−100 mV

matched pairs
forward transconductance ID = 5 A; VDS = 10 V 4.5 6.2 − S
drain-source on-state resistance ID = 5 A; VGS = 10 V − 0.2 0.3 Ω
on-state drain current VGS = 10 V; VDS = 10 V − 25 − A
input capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 480 − pF
output capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 190 − pF
feedback capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 14 − pF

handbook, halfpage

0

T.C.

(mV/K)

−1

−2

−3

−4

−5

−2

VDS= 10 V; valid for Th= 25 to 70 °C.

−1

10

11010

ID (A)

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current, typical
values.

MGP090

30

handbook, halfpage

I

D

(A)

20

10

0

0

VDS= 10 V.

51015

MGP091

V

(V)

GS

Fig.5 Drain current as a function of gate-source

voltage, typical values.

September 1992 4

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

400

handbook, halfpage

R

DS(on)

(mΩ)

300

200

100

0

ID= 5 A; VGS= 10 V.

50 100 150

Tj (°C)

Fig.6 Drain-source on-state resistance as a

function of junction temperature, typical
values.

MGP092

C

is

C

os

MBK408

VDS (V)

1200

handbook, halfpage

C

(pF)

800

400

0

0

VGS= 0; f = 1 MHz.

20 40

Fig.7 Input and output capacitance as functions

of drain-source voltage, typical values.

60

300

handbook, halfpage

C

rs

(pF)

200

100

0

0

10 5020 30 40

VGS= 0; f = 1 MHz.

V

Fig.8 Feedback capacitance as a function of

drain-source voltage, typical values.

MGP093

DS

(V)

September 1992 5

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

APPLICATION INFORMATION FOR CLASS-AB OPERATION

T

= 25 °C; R

h

RF performance in SSB operation in a common source class-AB circuit.
f

= 28.000 MHz; f2 = 28.001 MHz.

1

= 0.2 K/W; ZL= 6.25 + j0 Ω unless otherwise specified.

th mb-h

MODE OF

OPERATION

f

(MHz)

V

(V)

DS

I

DQ

(A)

P

(W)

L

SSB, class-AB 28 50 0.7 20 to 150

(PEP)

G

P

(dB)

> 20

typ. 35

η

D

(%)

> 35

typ. 40

d

3

(dB)

(note 1)

<−30

typ. −35

d

5

(dB)

(note 1)

<−30

typ. −38

Note

1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are
referred to the according level of either the equal amplified tones. Related to the according peak envelope power
these figures should be decreased by 6 dB.

Ruggedness in class-AB operation

The BLF177 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under the
following conditions:

VDS= 50 V; f = 28 MHz at rated output power.

30

handbook, halfpage

G

p

(dB)

MGP096

60

handbook, halfpage

η

D

(%)

MGP094

20

10

0

0

Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
RGS = 5 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.

100 200

PL (W) PEP

Fig.9 Power gain as a function of load power,

typical values.

September 1992 6

40

20

0

0

Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
RGS = 5 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.

100 200

PL (W) PEP

Fig.10 Two tone efficiency as a function of load

power, typical values.

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

−20

handbook, halfpage

d

3

(dB)

−30

−40

−50

−60

0

Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
RGS = 5 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.

100 200

PL (W) PEP

MGP097

Fig.11 Third order intermodulation distortion as a

function of load power, typical values.

−20

handbook, halfpage

d

5

(dB)

−30

−40

−50

−60

0

Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
RGS = 5 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.

100 200

PL (W) PEP

MGP098

Fig.12 Fifth order intermodulation distortion as a

function of load power, typical values.

handbook, full pagewidth

D.U.T.

L2

input
50 Ω

f = 28 MHz.

C1

C2

C3

C4

L1

R2R1

C5

R3

R4

+V

G

Fig.13 Test circuit for class-AB operation.

September 1992 7

+V

C9

C10

R5

C8

D

L3

L4

C6

L5

L6

C11

C7

MGP095

C12

C14

C15

C13

output

50 Ω

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

List of components (class-AB test circuit)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C4, C13, C14 film dielectric trimmer 7 to 100 pF 2222 809 07015
C2 multilayer ceramic chip capacitor

(note 1)

C3, C11 multilayer ceramic chip capacitor

(note 1)
C5, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C7 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104
C5 multilayer ceramic chip capacitor 10 nF 2222 852 47103
C7 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104
C8 electrolytic capacitor 2.2µF, 63 V
C9, C10 multilayer ceramic chip capacitor

(note 1)
C12 multilayer ceramic chip capacitor

(note 1)
C15 multilayer ceramic chip capacitor

(note 1)
L1 5 turns enamelled 0.7 mm copper

wire

L2, L3 stripline (note 2) 41.1 Ω length 13 × 6 mm
L4 7 turns enamelled 1.5 mm copper

wire

L5 grade 3B Ferroxcube wideband HF

choke
L6 5 turns enamelled 2 mm copper

wire

R1, R2 1 W metal film resistor 10 Ω
R2 0.4 W metal film resistor 10 kΩ
R3 0.4 W metal film resistor 1 MΩ
R5 1 W metal film resistor 10 kΩ

56 pF

62 pF

20 pF

100 pF

150 pF

133 nH length 4.5 mm;

int. dia. 6 mm;
leads 2 × 5 mm

236 nH length 12.5 mm;

int. dia. 8 mm;
leads 2 × 5 mm

4312 020 36642

170 nH length 11.5 mm;

int. dia. 8 mm;
leads 2 × 5 mm

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε
thickness 1.6 mm.

September 1992 8

= 2.2),

r

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

10

handbook, halfpage

Z

i

(Ω)

r

5

0

−5
0

Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
PL = 150 W (PEP); RGS= 6.25 Ω;RL= 6.25 Ω.

i

x

i

10 20 30

MGP099

f (MHz)

Fig.14 Input impedance as a function of frequency

(series components), typical values.

30

handbook, halfpage

G

p

(dB)

20

10

0

0

Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
PL = 150 W (PEP); RGS= 6.25 Ω;RL= 6.25 Ω.

10 20 30

f (MHz)

Fig.15 Power gain as a function of frequency,

typical values.

MGP100

September 1992 9

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

APPLICATION INFORMATION FOR CLASS-B OPERATION

T

= 25 °C; R

h

RF performance in CW operation in a common source class-B test circuit.

= 0.2 K/W; RGS= 15.8 Ω; unless otherwise specified.

th mb-h

MODE OF

OPERATION

f

(MHz)

V

(V)

DS

I

DQ

(A)

P

(W)

L

G

P

(dB)

η

(%)

D

CW, class-B 108 50 0.1 150 typ. 19 typ. 70

30

handbook, halfpage

G

p

(dB)

20

10

0

0 100 200

Class-B operation; VDS = 50 V; IDQ = 100 mA;
RGS = 15.8 Ω; f = 108 MHz.

PL (W)

MGP101

100

handbook, halfpage

η

(%)

50

0

0

Class-B operation; VDS = 50 V; IDQ = 100 mA;
RGS = 15.8 Ω; f = 108 MHz.

100 200

PL (W)

MGP102

Fig.16 Power gain as a function of load power,

typical values.

September 1992 10

Fig.17 Two tone efficiency as a function of load

power, typical values.

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

3

MGP103

PIN (W)

200

handbook, halfpage

P

L

(W)

100

0

012 4

Class-B operation; VDS = 50 V; IDQ = 100 mA;
RGS = 15.8 Ω; f = 108 MHz.

Fig.18 Load power as a function of input power,

typical values.

handbook, full pagewidth

D.U.T.

BLF177

L3

R2R1

R5

input
50 Ω

f = 108 MHz.

C1

C3

C2

C4

C5

L2

C6

C7

R3

C8

R4

L1

Fig.19 Test circuit for class-B operation.

September 1992 11

C17

L4

L5

C9

C11

L6

C19

L7

C10

MGP104

R6

C13

C14

C12

+V

C15

C16

C18

output

50 Ω

L8

D

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

List of components (class-B test circuit)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C2, C16, C18 film dielectric trimmer 2.5 to 20 pF 2222 809 07004
C3 multilayer ceramic chip capacitor

(note 1)

C4, C5 multilayer ceramic chip capacitor

(note 1)

C6, C7, C9, C10 multilayer ceramic chip capacitor

(note 1)
C8 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C11 multilayer ceramic chip capacitor 10 nF 2222 852 47103
C12 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104
C13, C14 multilayer ceramic chip capacitor

(note 1)
C15 multilayer ceramic chip capacitor

(note 1)
C17 multilayer ceramic chip capacitor

(note 1)
C19 electrolytic capacitor 4.4 µF, 63 V 2222 030 28478
L1 3 turns enamelled 0.8 mm copper

wire

L2 stripline (note 2) 64.7 Ω 31 × 3 mm
L3, L4 stripline (note 2) 41.1 Ω 10 × 6 mm
L5 6 turns enamelled 1.6 mm copper

wire

L6 grade 3B Ferroxcube wideband HF

choke
L7 1 turn enamelled 1.6 mm copper

wire
L8 2 turns enamelled 1.6 mm copper

wire

R1, R2 1 W metal film resistor 31.6 Ω
R3 0.4 W metal film resistor 1 kΩ
R4 cermet potentiometer 5 kΩ
R5 0.4 W metal film resistor 44.2 Ω
R6 1 W metal film resistor 10 Ω

20 pF

62 pF

1 nF

36 pF

12 pF

5.6 pF

22 nH length 5.5 mm;

int. dia. 3 mm;
leads 2 × 5 mm

122 nH length 13.8 mm;

int. dia. 6 mm;
leads 2 × 5 mm

4312 020 36642

16.5 nH int. dia. 9 mm;
leads 2 × 5 mm

34.4 nH length 3.9 mm;
int. dia. 6 mm;
leads 2 × 5 mm

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε
thickness 1.6 mm.

September 1992 12

= 2.2),

r

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

handbook, full pagewidth

strap strap

C3

C1 C2

174

rivet

strap

R4

R5

L6

R3

C8

C6
C7

C4

L1

C5

R1 R2

L2

L3

C9

R6

C11

C10

L5

C13

L7

L4

C14

+V

C12

C19

D

C15

L8

C16 C18

70

C17

The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the source
leads and at the input and output copper straps are used for a direct contact between upper and lower sheets.

Dimensions in mm.

Fig.20 Component layout for 108 MHz class-B test circuit.

September 1992 13

MGP105

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

r

i

x

i

f (MHz)

MGP107

handbook, halfpage

4

Z

i

(Ω)

2

0

−2

−4

−6

0 200

Class-B operation; VDS= 50 V; IDQ= 0.1 A;

= 150 W; RGS=15Ω.

P

L

100

Fig.21 Input impedance as a function of frequency

(series components), typical values.

10

handbook, halfpage

Z

L

(Ω)

8

R

L

6

X

4

2

0

0 200

Class-B operation; VDS= 50 V; IDQ= 0.1 A;

= 150 W; RGS=15Ω.

P

L

L

100

MGP108

f (MHz)

Fig.22 Load impedance as a function of frequency

(series components), typical values.

handbook, halfpage

Fig.23 Definition of MOS impedance.

30

handbook, halfpage

G

p

(dB)

20

10

Z

i

Z

MBA379

L

0

0 200

Class-B operation; VDS= 50 V; IDQ= 0.1 A;

= 150 W; RGS=15Ω.

P

L

100

MGP109

f (MHz)

Fig.24 Power gain as a function of frequency,

typical values.

September 1992 14

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT121B

D

A

F

H

43

α

12

H

q

U

1

L

C

B

b

p

w

M

C

2

A

U

U

2

w

M

AB

1

D

3

1

c

Q

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.82

5.56

c

Db

12.83

12.86

0.16

0.10

0.006

0.004

IEC JEDEC EIAJ

12.59

0.506

0.496

12.57

0.505

0.495

F

D

1

2.67

28.45

2.41

25.52

1.120

0.105

0.095

0.312

1.005

0.249

REFERENCES

7.93

6.32

0.130

0.120

UNIT

inches

A

7.27

mm

6.17

0.229

0.286

0.219

0.243

OUTLINE

VERSION

SOT121B 97-06-28

pH

3.30

3.05

Q

4.45

3.91

0.175

0.154

q

18.42

0.725

U

24.90

24.63

0.98

0.97

1

6.48

6.22

0.255

0.245

3

2

12.32

12.06

0.485

0.475

EUROPEAN

PROJECTION

0.51

0.02

w1w

U

U

September 1992 15

2

1.02

0.04

ISSUE DATE

αL

45°

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

September 1992 16